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1. 发明专利

JPH06177480A SEMICONDUCTOR LASER ELEMENT AND MANUFACTURE THEREOF 失效
公开(公告)号：JPH06177480A
公开(公告)日：1994-06-24
申请号：JP27196692
申请日：1992-10-09
申请人： SHARP KK , HIKARI GIJUTSU KENKYU KAIHATSU
发明人： TANETANI MOTOTAKA , TAKIGUCHI HARUHISA , INOGUCHI KAZUHIKO , KUDO HIROAKI , OKUMURA TOSHIYUKI , SUGAWARA SATOSHI
IPC分类号： H01S5/00 , H01S3/18
摘要： PURPOSE:To obtain a vertical resonator type surface emission semiconductor laser element capable of oscillating only linearly polarized light in the desired direction with excellent selectivity. CONSTITUTION:In a semiconductor laser element, in which laser resonance is generated in the direction vertical to a substrate, a plurality of quantum fine lines 110 confining light are formed to an active layer generated by light. Gains larger than the direction orthogonal to the longitudinal direction of the quantum fine lines 110 are generated in the longitudinal direction of the quantum fine lines 110. Consequently, the direction of polarization of generated laser beams can be conformed to the longitudinal direction of the quantum fine lines 110. The center distances of the adjacent fine lines 110 are set in the wavelength or less of light in an LD element. Accordingly, no higher mode is generated in the oscillation transverse mode of laser beams.

2. 发明专利

JP2003234544A NITRIDE BASED SEMICONDUCTOR LASER ELEMENT AND ITS FABRICATING METHOD 审中-公开
公开(公告)号：JP2003234544A
公开(公告)日：2003-08-22
申请号：JP2002029128
申请日：2002-02-06
申请人： SHARP KK
发明人： OKUMURA TOSHIYUKI
IPC分类号： H01S5/323
摘要： PROBLEM TO BE SOLVED: To provide a nitride based semiconductor laser element having a low oscillation threshold value current density and enhanced reliability. SOLUTION: The nitride based semiconductor laser element comprises a quantum well structure active layer (9) composed of a nitride based conductor containing In and Ga and sandwiched by n-type layers (2-5, 7, 8) and p-type layers (10-12) composed of a nitride based conductor of Wurtzite structure on a substrate (1). The quantum well structure active layer (9) is formed in contact with the crystallographic (1-10n) faces (n=1-7) or (11-2m) faces (m=1-13) of the underlying layer (8). COPYRIGHT: (C)2003,JPO

3. 发明专利

JP2002344089A NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND MANUFACTURING METHOD THEREFOR 失效
公开(公告)号：JP2002344089A
公开(公告)日：2002-11-29
申请号：JP2001143179
申请日：2001-05-14
申请人： SHARP KK
发明人： OKUMURA TOSHIYUKI
IPC分类号： H01S5/343 , H01S5/22 , H01S5/323
摘要： PROBLEM TO BE SOLVED: To provide a nitride semiconductor light-emitting element, having low oscillation threshold current and improved reliability. SOLUTION: The nitride semiconductor light-emitting element comprises a quantum well structure active layer 6, made of a nitride semiconductor sandwiched between a clad layer and a guide layer made of a nitride semiconductor and containing In and Ga on a substrate. The active layer 6 is formed by a crystal growth, so as to suppress a surface migration of In atom and Ga atom during crystal growing in one direction inside a quantum well surface but so as not to suppress the surface migration in the opposite direction.

4. 发明专利

JPH11340573A GALLIUM NITRIDE BASED SEMICONDUCTOR LASER ELEMENT 失效
公开(公告)号：JPH11340573A
公开(公告)日：1999-12-10
申请号：JP14678698
申请日：1998-05-28
申请人： SHARP KK
发明人： OKUMURA TOSHIYUKI
IPC分类号： H01L33/06 , H01L33/32 , H01L33/38 , H01S5/00 , H01S5/042 , H01S5/065 , H01S5/323 , H01S5/343 , H01S3/18 , H01L33/00
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor laser element, having a good laser ocsillation characteristic which is capable of being used as a light source of an optical disc system. SOLUTION: In a gallium nitride based semiconductor laser element having an activated layer 6, comprising a semiconductor nitride formed between at least clad layers 4 and 9, and/or guide layers 5 and 8, on a substrate 1, a length in a direction of a laser resonator of an ohmic electrode 11 which supplies current to the activated layer, is shorter than the length of the laser resonator.

5. 发明专利

JPH10261838A GALLIUM NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND SEMICONDUCTOR LASER BEAM SOURCE DEVICE 失效
公开(公告)号：JPH10261838A
公开(公告)日：1998-09-29
申请号：JP6572597
申请日：1997-03-19
申请人： SHARP KK
发明人： OKUMURA TOSHIYUKI
IPC分类号： H01L33/06 , H01L33/14 , H01L33/32 , H01S5/00 , H01S3/18 , H01L33/00
摘要： PROBLEM TO BE SOLVED: To make it possible for a semiconductor laser element to have good laser oscillation characteristics and to make it possible for a light-emitting diode element to obtain a high light output by a method wherein a quantum well structure active layer, which comprises a nitrogen compound semiconductor containing indium and gallium, is formed of the specified number of layers of quantum well layers and a specified layer thickness of barrier layers, which are alternately laminated. SOLUTION: The compositions of four layers of In0.2 Ga0.8 N quantum well layers (the thickness: 10 μm or thinner) 14 and three layers of In0.05 Ga0.95 ND barrier layers 15, which constitute a multiple quantum well structure active layer 6, have only to be set according to the necessary oscillation wavelength of a laser and in the case where the oscillation wavelength wants to be lengthened, the composition of the In in the layers 14 is increased and in the case where the oscillation wavelength is wanted to shorten, the composition of the In in the layers 14 is reduced. The number of layers of the layers 14 is set in two or more to 1000 or less. Provided that, the layer thickness of the layers 15 is set in 4 μm or thinner and is held limiting so that an overlapping of the wave function of electrodes with the wave function of holes is generated between the layers 14. Thereby, the luminous efficiency of a semiconductor laser element is enhanced and the oscillation threshold current value of the laser element can be reduced.

6. 发明专利

JPH1074740A METHOD FOR PROCESSING COMPOUND SEMICONDUCTOR 失效
公开(公告)号：JPH1074740A
公开(公告)日：1998-03-17
申请号：JP22801296
申请日：1996-08-29
申请人： SHARP KK
发明人： ITO SHIGETOSHI , OKUMURA TOSHIYUKI
IPC分类号： C09K3/00 , H01L21/308 , H01L21/467 , H01L33/28 , H01L33/00
摘要： PROBLEM TO BE SOLVED: To smoothen an etching surface by constituting an etchant for etching a II-VI group compound semiconductor, of hydrogen peroxide water and chelate reagent, and by exposing a specific crystal surface for the etching surface. SOLUTION: A wafer laminating an MgXZn1- XSYSe1- Y (0

7. 发明专利

JPH09237943A COMPOUND SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF 失效
公开(公告)号：JPH09237943A
公开(公告)日：1997-09-09
申请号：JP34620396
申请日：1996-12-25
申请人： SHARP KK
发明人： ITO SHIGETOSHI , OKUMURA TOSHIYUKI
IPC分类号： H01L21/306 , H01L33/06 , H01L33/14 , H01L33/28 , H01L33/30 , H01S5/00 , H01S3/18 , H01L33/00
摘要： PROBLEM TO BE SOLVED: To perform etching of a II-IV group compound semiconductor material having ZnSe as the center by a selective method with good controllability by forming an etching stop layer of CdZnS and a semiconductor layer having ZnSe or the like as a constituent material on a semiconductor substrate. SOLUTION: A semiconductor integrated layer structure 300a formed on a substrate 301 shall incrude an etching stop layer 306 consisting of CdZnS and a single or a plurality of semiconductor layers 300 c formed directly on the layer and consisting of a required one of ZnSe, ZnSSe and MgZnSSe. Thereby, thevetching stop layer 306 has a sufficient etching-resistant property to an etching liquid of the semiconductor layer 300c thereon. Thereby, selective etching in the semiconductor laminated structure 300 consisting of a II-IV group compound semiconductor material becomes possible and allowing manufacture with a good yield so as to even obtain the II-VI group compound laser device 300 with a good characteristic.

8. 发明专利

JPH07263810A SEMICONDUCTOR LASER DEVICE 失效
公开(公告)号：JPH07263810A
公开(公告)日：1995-10-13
申请号：JP5410094
申请日：1994-03-24
申请人： SHARP KK
发明人： ITO SHIGETOSHI , OKUMURA TOSHIYUKI
IPC分类号： H01L33/06 , H01L33/14 , H01L33/28 , H01L33/30 , H01S5/00 , H01S3/18 , H01L33/00
摘要： PURPOSE:To provide a semiconductor laser element having a structure that a lateral mode is stable and a reactive current is small. CONSTITUTION:This semiconductor laser device is provided with a first- conductivity type lower clad layer 13, an active layer 14, a second-conductivity type upper clad layer 15 and a second-conductivity type intermediate layer 16 on a first-conductivity type semiconductor substrate 11, and the upper clad layer 15 and the intermediate layer 16 are worked in a ridge stripe, and the second-conductivity type contact layer 17 is formed on the whole surface of the ridge stripe structure. In the boundary face between the upper clad layer 15 and the contact layer 17, an energy level for majority carriers is large in the upper clad layer 15 with respect to a band relating to the transportation of the majority carriers, and the energy level for minority carriers is large in the contact layer 17 with respect to a band relating to the transportation of the minority carriers.

9. 发明专利

JPH0653611A MOUNTING METHOD FOR SEMICONDUCTOR LASER ELEMENT 失效
公开(公告)号：JPH0653611A
公开(公告)日：1994-02-25
申请号：JP20003592
申请日：1992-07-27
申请人： SHARP KK
发明人： ATSUNUSHI FUMIHIRO , OKUMURA TOSHIYUKI , MORIOKA TATSUYA
IPC分类号： H01L33/62 , H01S5/00 , H01S3/18 , H01L33/00
摘要： PURPOSE:To provide the mounting method for a semiconductor laser element, which can improve the yield rate with simple process and besides which is favorable in reliability on the temperature change in actual use. CONSTITUTION:A semiconductor laser element 4 is mounted by heating preform material films 2a and 2b after placing a sub mount 1 where the preform material films 2a and 2b are formed on both sides and a semiconductor laser element 4 in this order on a stem support 3.

10. 发明专利

JPH05291689A 失效
公开(公告)号：JPH05291689A
公开(公告)日：1993-11-05
申请号：JP9557992
申请日：1992-04-15
申请人： SHARP KK , FURUKAWA ELECTRIC CO LTD
发明人： OKUMURA TOSHIYUKI , ATSUNUSHI FUMIHIRO , MORIOKA TATSUYA , MATSUMOTO SHIGETO
IPC分类号： H01S5/00 , H01S3/18
摘要： PURPOSE:To obtain a sufficient optical output and excellent temperature characteristics by making the number of the quantum well layers constituting a quantum well structure fall within a specific range and making the resonator length fall within a specific range for reducing the carrier overflow at high temperatures. CONSTITUTION:Sequentially formed on an n-type InP substrate 8 are an n-type clad layer 1, a first guide layer 2, a multiple quantum well structured active layer 7 made up of a plurality of sequentially deposited quantum well layers 3 and barrier layers 4, a second guide layer 5, a p-type clad layer 6, and a p -type cap layer 11. The gain increases, because the light confinement coefficient increases as the number of the quantum well layers increases. However, if the number of the quantum well layers exceeds an appropriate number, the spreading angle of a far-field image in the direction perpendicular to the quantum well layers increases. Accordingly, the number of the quantum wells is set between 6 and 10. In addition, since the heating value of the semiconductor laser device needs to be suppressed, and to reduce the threshold current density, the resonator length is set between 250mum and 700mum.

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