专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明专利

JP2565909B2 失效
公开(公告)号：JP2565909B2
公开(公告)日：1996-12-18
申请号：JP16916487
申请日：1987-07-06
申请人： SHARP KK
发明人： TAKAHASHI KOSEI , HAYAKAWA TOSHIRO , SUYAMA NAOHIRO , KONDO MASAFUMI
IPC分类号： H01S5/00 , H01S3/18

2. 发明专利

JPH0157515B2 失效
公开(公告)号：JPH0157515B2
公开(公告)日：1989-12-06
申请号：JP16612480
申请日：1980-11-25
申请人： SHARP KK
发明人： HAYAKAWA TOSHIRO , TAKAGI TOSHIKIMI , OOTSUKA NAOTAKA
IPC分类号： H01S5/00 , H01S5/223 , H01S5/24

3. 发明专利

JPH0147028B2 失效
公开(公告)号：JPH0147028B2
公开(公告)日：1989-10-12
申请号：JP2029680
申请日：1980-02-19
申请人： SHARP KK
发明人： YANO MORICHIKA , YAMAMOTO SABURO , KURATA YUKIO , MATSUI KANEKI , HAYAKAWA TOSHIRO , TAKIGUCHI HARUHISA
IPC分类号： H01S5/00 , H01S5/227

4. 发明专利

JPH01175285A SEMICONDUCTOR LASER DEVICE 失效
公开(公告)号：JPH01175285A
公开(公告)日：1989-07-11
申请号：JP33270787
申请日：1987-12-29
申请人： SHARP KK
发明人： HAYAKAWA TOSHIRO , SUYAMA NAOHIRO , TAKAHASHI KOUSEI , KONDO MASAFUMI
IPC分类号： H01S5/00 , H01S5/34 , H01S5/343
摘要： PURPOSE:To produce a higher output power without raising a threshold current drastically, by setting an Al mixed crystal ratio at least at a part that is in contact with a quantum well active layer at least out of optical guide layers to a specified value. CONSTITUTION:An MBE process allows a buffer layer 12, a graded buffer layer 13, a clad layer 14, a GRIN optical guide layer 15, a quantum well active layer 16, the GRIN optical guide layer 17, the clad layer 18, and a cap layer to grow continuously on a substrate 11. After forming an SiNx film 20 on the cap layer 19, n-side and p-side electrodes 21 and 22 are formed. When Al mixed ratios x and z between the quantum well active layer 16 and the clad layers 14 and 18 as well as the above ratio y between GRIN optical guide layers 15 and 17 satisfy expressions: z-y =0.3, a breakdown light output is more than 2W and a high output semiconductor laser where an oscillation threshold current is the order of 200mA is obtained stably.

5. 发明专利

JPS63271991A MANUFACTURE OF SEMICONDUCTOR LASER ELEMENT 失效
公开(公告)号：JPS63271991A
公开(公告)日：1988-11-09
申请号：JP10561187
申请日：1987-04-28
申请人： SHARP KK
发明人： SUYAMA NAOHIRO , TAKAHASHI KOUSEI , KONDO MASAFUMI , HAYAKAWA TOSHIRO
IPC分类号： H01S5/00
摘要： PURPOSE:To enable forming a junction region of a low resistance electrode and a semiconductor without the diffusion of impurities by burying a multilayered crystal structure by growing a plurality of buried layers on the mesa type side of the multilayered crystal structure. CONSTITUTION:After a growth layer is formed with a multilayered structure consisting of at least the first clad layer 2, an active layer 3, the second clad layer 4, a cap layer 5 and a growth blocking layer 6 at the time of the first growth, when the multilayered structure is etched to from a mesa, the width of a mesa is made narrower by selectively etching the cap layer 5 excessively than the adjacent second clad layer 4 and the growth blocking layer 6. At the time of burying and growing, the interface of the last layer 13 of a plurality of buried layers and a layer 12 immediately before the last layer 13 is made nearly coincide with the interface of the second clad layer 4 and the cap layer 5 of a mesa region and simultaneously, the buried last layer 13 and the cap layer 5 of the mesa region are formed to be made a continuous one layer. This enables forming a low resistance electrode in a buried type semiconductor laser without the diffusion process of a impurities and obtaining a laser oscillation at a low voltage.

6. 发明专利

JPS63208296A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS63208296A
公开(公告)日：1988-08-29
申请号：JP4225887
申请日：1987-02-24
申请人： SHARP KK
发明人： HAYAKAWA TOSHIRO , SUYAMA NAOHIRO , KONDO MASAFUMI , TAKAHASHI KOUSEI
IPC分类号： G02F1/015 , H01L29/04 , H01L29/15 , H01L29/205 , H01L33/06 , H01L33/16 , H01L33/30 , H01L33/40 , H01S5/00 , H01S5/02 , H01S5/32 , H01S5/343
摘要： PURPOSE:To increase a one-dimensional quantum effect remarkably and to improve the characteristics of a semiconductor device using said quantum effect, by making the surface orientation of a substrate to be 111 surface orientation basically. CONSTITUTION:The electronic energy structure of a semiconductor is largely different based on crystal orientation, a one-dimensional quantum effect is different based on said orientation. In comparison with a conventional surface orientation, the larger quantum effect is obtained in a surface orientation. An element structure is constituted on the surface (111) of a substrate. A semiconductor device, which has more excellent characteristics than those of an element structure on a (100) surface, is implemented by using the quantum effect in the surface orientation.

7. 发明专利

JPS63164484A SEMICONDUCTOR LASER ELEMENT 失效
公开(公告)号：JPS63164484A
公开(公告)日：1988-07-07
申请号：JP31427586
申请日：1986-12-26
申请人： SHARP KK
发明人： HAYAKAWA TOSHIRO , SUYAMA NAOHIRO , TAKAHASHI HISATOSHI , KONDO MASAFUMI
IPC分类号： H01S5/00 , H01S5/042 , H01S5/20 , H01S5/22 , H01S5/223 , H01S5/323
摘要： PURPOSE:To suppress the lateral expansion of a current by providing an optical guide layer between an active layer as an active region and a clad layer, raising the resistance value of the guide layer on the side of a current being constricted and reducing the resistance value of the guide layer on the opposite side. CONSTITUTION:A buffer layer 12, a clad layer 13, an n-type GRIN layer 14 which operates as an optical guide layer, an active layer 15, an undoped GRIN layer 16, a clad layer 17 and a cap layer 18 are continuously grown by a molecular beam epitaxial growing method on an n-type GaAs substrate 11. A route in which a current expansion occurs except a mesa is mainly of the GRIN layer 16 having p-10 cm of relatively high resistance, and under the layer 15, the low resistance layer 14 and the n-type AlGaAs layer 13. Thus, the current expansion until the current is injected from the mesa to the active layer can be suppressed to extremely small value.

8. 发明专利

JPS63150985A SEMICONDUCTOR LASER 失效
公开(公告)号：JPS63150985A
公开(公告)日：1988-06-23
申请号：JP29817486
申请日：1986-12-15
申请人： SHARP KK
发明人： HAYAKAWA TOSHIRO , SUYAMA NAOHIRO , TAKAHASHI KOUSEI , KONDO MASAFUMI
IPC分类号： H01S5/00 , H01S5/227
摘要： PURPOSE:To extremely reduce a current to an ultralow value by forming a second conductivity type semiconductor layer of the thickness sufficient to compensate a generated step on a first conductivity type semiconductor substrate having a mesa region for narrowing a current, and burying an oscillation region with a high resistance layer and a multilayer buried layer including the first conductivity type semiconductor layer on the layer. CONSTITUTION:A stripelike mesa 20 is formed on a P-type GaAs substrate 11. Then, the top surface of the mesa 20 is exposed on a tellurium (Te)-doped N-type GaAs current blocking layer 12. A beryllium-doped clad layer 13, a GRIN layer (optical guide layer) 14, an undoped quantum well layer (active region) 15, a GIRN layer (optical guide layer) 16, a silicon (Si)-doped clad layer 17, an Si-doped cap layer 18 are sequentially continuously grown. Here, an undoped buried layer 21, a magnesium (Mg)-doped P-type buried layer 22, and a tellurium-doped N-type cap layer 23 are so sequentially grown as to bury the oscillation regions 13-18 formed in a mesa stripelike state by so etching as to arrive at the surface of the layer 12. An AuGe/Ni layer is deposited thereon, and an AuZn layer is deposited to be alloyed on the substrate 11.

9. 发明专利

JPS62193192A SEMICONDUCTOR LASER ELEMENT 失效
公开(公告)号：JPS62193192A
公开(公告)日：1987-08-25
申请号：JP3572186
申请日：1986-02-19
申请人： SHARP KK
发明人： TAKAHASHI KOUSEI , HAYAKAWA TOSHIRO , SUYAMA NAOHIRO , KONDO MASAFUMI , YAMAMOTO SABURO
IPC分类号： H01S5/00 , H01S5/20 , H01S5/22 , H01S5/34 , H01S5/343
摘要： PURPOSE:To entrap intensive light while improving the carrier injecting efficiency, by constituting at least one of optical guide layers by overlaying alternately two specific types of AlGaAs layers such that the an optical refractive index thereof is increased progressively toward the outside. CONSTITUTION:A clad layer of N-type AlGaAs (x=0.7) 22, a GRIN guide layer of non-doped AlAs/GaAs superlattice 23, a quantum well active layer of non-doped AlGaAs (x=0.2) 24, a GRIN guide layer of non-doped A As/GaAs superlattice 25, a clad layer of P-type AlGaAs (x=0.7) 26, a cap layer of P-type GaAs 27 and a current blocking layer of N-type AlGaAs 28 are grown on an N-type GaAs substrate 21 sequentially in that order. an average of crystal mixing ratios, xeff=LB/(LB+LZ) of a superlattice in which the AlAs layers 26 having a thickness LB and the GaAs layers 28 having a thickness LZ are overlaid alternately is fixed, and the crystal mixing ratio xeff is increased progressively from the region contacted with the active layer toward the outside so as to increase the optical refractive index according thereto. Laser beams are thereby entrapped and, at the same time therewith, the carrier injecting efficiency can be improved.

10. 发明专利

JPS6297390A SEMICONDUCTOR LASER ELEMENT 失效
公开(公告)号：JPS6297390A
公开(公告)日：1987-05-06
申请号：JP24018585
申请日：1985-10-23
申请人： SHARP KK
发明人： SUYAMA NAOHIRO , TAKAHASHI KOUSEI , YAMAMOTO SABURO , HAYAKAWA TOSHIRO , KONDO MASAFUMI
IPC分类号： H01S5/00
摘要： PURPOSE:To form a semiconductor laser element having a refractive index waveguide mechanism, which can be manufactured by an MBE method, when a super-lattice structure is grown on a substrate having a stripe shaped groove, by utilizing tendency that the super-lattice structure offsets groove-shaped irregularities when the width of the groove is narrowed. CONSTITUTION:The pitch of grooves on an irregular surface 2 is made very small. The average thickness of a lightguide layer 4 directly on the irregular surface 2 is thicker than the parts of the lightguide layer 4 at the outer flat surface. Therefore, the refractive index distribution in the parallel direction with an active layer 7 is large at a part directly on the irregular surface 2. The distribution on both sides is small. Thus, a refractive index waveguide is formed within the active layer 7. In this structure, when the thicknesses of a GaAs layer 6 and AlGaAs 5, which constitute the super-lattice structure of the lightguide layer 4, are selected to be suitable values, the equivalent forbidden band width caused by the thickness of the lightguide layer 4 can be made small directly on the irregular surface 2 and can be made large at the outside other than said part. Thus carriers can be effectively confined within the region of the active layer directly on the irregular surface 2.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式