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1. 发明专利

JPH0645683A SEMICONDUCTOR LASER ELEMENT 失效
公开(公告)号：JPH0645683A
公开(公告)日：1994-02-18
申请号：JP19387592
申请日：1992-07-21
申请人： SHARP KK
发明人： SUGA YASUO , HOSODA MASAHIRO , TAKAHASHI KOUSEI , TSUNODA TOKUO , TANI KENTARO
IPC分类号： H01S5/00 , H01S5/042 , H01S5/065 , H01S3/18
摘要： PURPOSE:To extend a distribution width of a light from a gain region of a semiconductor laser element, to generate a self-oscillation and to realize low noise characteristics. CONSTITUTION:An n-type AlInP clad layer 13, a GaInP active layer 14 and a p-type AlInP clad layer 15 are sequentially provided on a substrate 11. A ridge 20 is formed on the layer 15, and n-type GaAs current narrowing layers 19 are provided at both sides of the ridge 20. A multilayer grown layer 18 having substantially equal mean refractive index as that of the layer 15 is provided between a side face of the ridge 20 and the layer 19. The layer 18 is formed by laminating a plurality of Al0.4Ga0.6As layers each having larger refractive index than that of the layer 15 and a plurality of AlAs layers each having smaller refractive index than that of the layer 15.

2. 发明专利

JPH05299781A 失效
公开(公告)号：JPH05299781A
公开(公告)日：1993-11-12
申请号：JP10679292
申请日：1992-04-24
申请人： SHARP KK
发明人： HOSODA MASAHIRO , TSUNODA ATSUISA , TANI KENTARO , SUGA YASUO , TAKAHASHI KOUSEI
IPC分类号： H01L33/06 , H01L33/14 , H01L33/30 , H01S5/00 , H01S3/18 , H01L33/00
摘要： PURPOSE:To provide a semiconductor device which is capable of reducing a drive current without increasing a drive voltage and being manufactured with a minimum process. CONSTITUTION:Amphoteric impurities are doped on a semiconductor layer formed on both sides of a mesa stripe section of a p-type clad layer 4. As a crystal surface of a mixed crystal differs on the side surfaces 10 of a mesa stripe section and other surfaces 11 excluding the mesa stripe section in the p-type clad layer, semiconductor laminated layers 6 and 7 formed on the p-type clad layer 4 are turned into p-type semiconductor layers 6a and 7b on the both side surfaces and n-type semiconductor layers 6a and 7a on the surfaces except for the mesa stripe section by impurities. Therefore, the width of the bottom of the mesa stripe section is limited by the n type semiconductor layers 6a and 7a so that a current injection width may be narrowed. Although this reduction in the current injection width reduces the injection current as well, an opening area in the upper part of the mesa stripe section is widened substantially. It is, therefore, possible to prevent an increase in the drive voltage.

3. 发明专利

JPH0567836A ALGAINP SEMICONDUCTOR LASER 失效
公开(公告)号：JPH0567836A
公开(公告)日：1993-03-19
申请号：JP22737791
申请日：1991-09-06
申请人： SHARP KK
发明人： HOSODA MASAHIRO , TAKAHASHI KOUSEI , MATSUI KANEKI
IPC分类号： H01S5/00
摘要： PURPOSE:To provide a stable and reliable AlGaInP visible-region laser having an index-guided structure and a current confinement structure that are formed in a single growth step. CONSTITUTION:A p-type laminated AlGaInP structure is formed on a substrate 100 having a stripe groove 110. The laminated structure includes a p-type clad layer 101, an active layer 102, an n-type clad layer 103, and an n-type contact layer 105. Between the clad layer 103 and the contact layer 105 is formed a p-type intermediate layer 104 having a narrower forbidden band than the clad layer 103. The intermediate layer 104 is thinner above the groove sides and thicker above the groove bottom than the de Broglie wavelength of the carrier.

4. 发明专利

JPH04162584A MANUFACTURE OF SEMICONDUCTOR LASER ELEMENT 失效
公开(公告)号：JPH04162584A
公开(公告)日：1992-06-08
申请号：JP28809390
申请日：1990-10-24
申请人： SHARP KK
发明人： HOSODA MASAHIRO , TAKAHASHI KOUSEI , SUGA YASUO , TSUNODA ATSUISA , TANI KENTARO , MATSUI KANEKI
IPC分类号： H01S5/00
摘要： PURPOSE:To enhance the output of an element and to improve mass productivity by etching a part corresponding to the end of a resonator of an AlGaInP DH structure having an AlGaAs crystal on an uppermost layer until a lower AlGaInP clad layer is exposed, and then burying the etched region with the AlGaAs crystal having transparent composition for an oscillation wavelength by an MBE method. CONSTITUTION:An n-type (Al0.7Ga0.3)0.5In0.5P lower clad layer 11, a Ga0.5In0.5P active layer 12, a p-type (Al0.7Ga0.3)0.5PIn0.5P upper clad layer 13, and a P-type GaAs protective layer 14 are laminated on an n-type GaAs substrate 10 to form a DH structure, and a part 20 corresponding to a light emitting end face is dug so as to reach the lower clad layer. Then, this wafer is introduced into an MBE unit, and heated while irradiating it with an As molecular beam. In this case, P atoms are substituted with As atoms at the exposed lower clad layer 31, the side face 32 to form a modified layer. Then, a p-type Al0.55Ge0.45As window layer 15 transparent for an oscillation wavelength is grown until a groove 20 is buried, and a p-type GaAs contact layer 16 is laminated.

5. 发明专利

JPH01175285A SEMICONDUCTOR LASER DEVICE 失效
公开(公告)号：JPH01175285A
公开(公告)日：1989-07-11
申请号：JP33270787
申请日：1987-12-29
申请人： SHARP KK
发明人： HAYAKAWA TOSHIRO , SUYAMA NAOHIRO , TAKAHASHI KOUSEI , KONDO MASAFUMI
IPC分类号： H01S5/00 , H01S5/34 , H01S5/343
摘要： PURPOSE:To produce a higher output power without raising a threshold current drastically, by setting an Al mixed crystal ratio at least at a part that is in contact with a quantum well active layer at least out of optical guide layers to a specified value. CONSTITUTION:An MBE process allows a buffer layer 12, a graded buffer layer 13, a clad layer 14, a GRIN optical guide layer 15, a quantum well active layer 16, the GRIN optical guide layer 17, the clad layer 18, and a cap layer to grow continuously on a substrate 11. After forming an SiNx film 20 on the cap layer 19, n-side and p-side electrodes 21 and 22 are formed. When Al mixed ratios x and z between the quantum well active layer 16 and the clad layers 14 and 18 as well as the above ratio y between GRIN optical guide layers 15 and 17 satisfy expressions: z-y =0.3, a breakdown light output is more than 2W and a high output semiconductor laser where an oscillation threshold current is the order of 200mA is obtained stably.

6. 发明专利

JPS63271991A MANUFACTURE OF SEMICONDUCTOR LASER ELEMENT 失效
公开(公告)号：JPS63271991A
公开(公告)日：1988-11-09
申请号：JP10561187
申请日：1987-04-28
申请人： SHARP KK
发明人： SUYAMA NAOHIRO , TAKAHASHI KOUSEI , KONDO MASAFUMI , HAYAKAWA TOSHIRO
IPC分类号： H01S5/00
摘要： PURPOSE:To enable forming a junction region of a low resistance electrode and a semiconductor without the diffusion of impurities by burying a multilayered crystal structure by growing a plurality of buried layers on the mesa type side of the multilayered crystal structure. CONSTITUTION:After a growth layer is formed with a multilayered structure consisting of at least the first clad layer 2, an active layer 3, the second clad layer 4, a cap layer 5 and a growth blocking layer 6 at the time of the first growth, when the multilayered structure is etched to from a mesa, the width of a mesa is made narrower by selectively etching the cap layer 5 excessively than the adjacent second clad layer 4 and the growth blocking layer 6. At the time of burying and growing, the interface of the last layer 13 of a plurality of buried layers and a layer 12 immediately before the last layer 13 is made nearly coincide with the interface of the second clad layer 4 and the cap layer 5 of a mesa region and simultaneously, the buried last layer 13 and the cap layer 5 of the mesa region are formed to be made a continuous one layer. This enables forming a low resistance electrode in a buried type semiconductor laser without the diffusion process of a impurities and obtaining a laser oscillation at a low voltage.

7. 发明专利

JPS63208296A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS63208296A
公开(公告)日：1988-08-29
申请号：JP4225887
申请日：1987-02-24
申请人： SHARP KK
发明人： HAYAKAWA TOSHIRO , SUYAMA NAOHIRO , KONDO MASAFUMI , TAKAHASHI KOUSEI
IPC分类号： G02F1/015 , H01L29/04 , H01L29/15 , H01L29/205 , H01L33/06 , H01L33/16 , H01L33/30 , H01L33/40 , H01S5/00 , H01S5/02 , H01S5/32 , H01S5/343
摘要： PURPOSE:To increase a one-dimensional quantum effect remarkably and to improve the characteristics of a semiconductor device using said quantum effect, by making the surface orientation of a substrate to be 111 surface orientation basically. CONSTITUTION:The electronic energy structure of a semiconductor is largely different based on crystal orientation, a one-dimensional quantum effect is different based on said orientation. In comparison with a conventional surface orientation, the larger quantum effect is obtained in a surface orientation. An element structure is constituted on the surface (111) of a substrate. A semiconductor device, which has more excellent characteristics than those of an element structure on a (100) surface, is implemented by using the quantum effect in the surface orientation.

8. 发明专利

JPS63150985A SEMICONDUCTOR LASER 失效
公开(公告)号：JPS63150985A
公开(公告)日：1988-06-23
申请号：JP29817486
申请日：1986-12-15
申请人： SHARP KK
发明人： HAYAKAWA TOSHIRO , SUYAMA NAOHIRO , TAKAHASHI KOUSEI , KONDO MASAFUMI
IPC分类号： H01S5/00 , H01S5/227
摘要： PURPOSE:To extremely reduce a current to an ultralow value by forming a second conductivity type semiconductor layer of the thickness sufficient to compensate a generated step on a first conductivity type semiconductor substrate having a mesa region for narrowing a current, and burying an oscillation region with a high resistance layer and a multilayer buried layer including the first conductivity type semiconductor layer on the layer. CONSTITUTION:A stripelike mesa 20 is formed on a P-type GaAs substrate 11. Then, the top surface of the mesa 20 is exposed on a tellurium (Te)-doped N-type GaAs current blocking layer 12. A beryllium-doped clad layer 13, a GRIN layer (optical guide layer) 14, an undoped quantum well layer (active region) 15, a GIRN layer (optical guide layer) 16, a silicon (Si)-doped clad layer 17, an Si-doped cap layer 18 are sequentially continuously grown. Here, an undoped buried layer 21, a magnesium (Mg)-doped P-type buried layer 22, and a tellurium-doped N-type cap layer 23 are so sequentially grown as to bury the oscillation regions 13-18 formed in a mesa stripelike state by so etching as to arrive at the surface of the layer 12. An AuGe/Ni layer is deposited thereon, and an AuZn layer is deposited to be alloyed on the substrate 11.

9. 发明专利

JPS62193192A SEMICONDUCTOR LASER ELEMENT 失效
公开(公告)号：JPS62193192A
公开(公告)日：1987-08-25
申请号：JP3572186
申请日：1986-02-19
申请人： SHARP KK
发明人： TAKAHASHI KOUSEI , HAYAKAWA TOSHIRO , SUYAMA NAOHIRO , KONDO MASAFUMI , YAMAMOTO SABURO
IPC分类号： H01S5/00 , H01S5/20 , H01S5/22 , H01S5/34 , H01S5/343
摘要： PURPOSE:To entrap intensive light while improving the carrier injecting efficiency, by constituting at least one of optical guide layers by overlaying alternately two specific types of AlGaAs layers such that the an optical refractive index thereof is increased progressively toward the outside. CONSTITUTION:A clad layer of N-type AlGaAs (x=0.7) 22, a GRIN guide layer of non-doped AlAs/GaAs superlattice 23, a quantum well active layer of non-doped AlGaAs (x=0.2) 24, a GRIN guide layer of non-doped A As/GaAs superlattice 25, a clad layer of P-type AlGaAs (x=0.7) 26, a cap layer of P-type GaAs 27 and a current blocking layer of N-type AlGaAs 28 are grown on an N-type GaAs substrate 21 sequentially in that order. an average of crystal mixing ratios, xeff=LB/(LB+LZ) of a superlattice in which the AlAs layers 26 having a thickness LB and the GaAs layers 28 having a thickness LZ are overlaid alternately is fixed, and the crystal mixing ratio xeff is increased progressively from the region contacted with the active layer toward the outside so as to increase the optical refractive index according thereto. Laser beams are thereby entrapped and, at the same time therewith, the carrier injecting efficiency can be improved.

10. 发明专利

JPS6297390A SEMICONDUCTOR LASER ELEMENT 失效
公开(公告)号：JPS6297390A
公开(公告)日：1987-05-06
申请号：JP24018585
申请日：1985-10-23
申请人： SHARP KK
发明人： SUYAMA NAOHIRO , TAKAHASHI KOUSEI , YAMAMOTO SABURO , HAYAKAWA TOSHIRO , KONDO MASAFUMI
IPC分类号： H01S5/00
摘要： PURPOSE:To form a semiconductor laser element having a refractive index waveguide mechanism, which can be manufactured by an MBE method, when a super-lattice structure is grown on a substrate having a stripe shaped groove, by utilizing tendency that the super-lattice structure offsets groove-shaped irregularities when the width of the groove is narrowed. CONSTITUTION:The pitch of grooves on an irregular surface 2 is made very small. The average thickness of a lightguide layer 4 directly on the irregular surface 2 is thicker than the parts of the lightguide layer 4 at the outer flat surface. Therefore, the refractive index distribution in the parallel direction with an active layer 7 is large at a part directly on the irregular surface 2. The distribution on both sides is small. Thus, a refractive index waveguide is formed within the active layer 7. In this structure, when the thicknesses of a GaAs layer 6 and AlGaAs 5, which constitute the super-lattice structure of the lightguide layer 4, are selected to be suitable values, the equivalent forbidden band width caused by the thickness of the lightguide layer 4 can be made small directly on the irregular surface 2 and can be made large at the outside other than said part. Thus carriers can be effectively confined within the region of the active layer directly on the irregular surface 2.

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