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1. 发明专利

JPH0446476B2 失效
公开(公告)号：JPH0446476B2
公开(公告)日：1992-07-30
申请号：JP17909385
申请日：1985-08-14
申请人： SHARP KK
发明人： OOTSUKA NAOTAKA
IPC分类号： H01S5/00

2. 发明专利

JPH0157515B2 失效
公开(公告)号：JPH0157515B2
公开(公告)日：1989-12-06
申请号：JP16612480
申请日：1980-11-25
申请人： SHARP KK
发明人： HAYAKAWA TOSHIRO , TAKAGI TOSHIKIMI , OOTSUKA NAOTAKA
IPC分类号： H01S5/00 , H01S5/223 , H01S5/24

3. 发明专利

JPS57159082A SEMICONDUCTOR LASER ELEMENT 失效
公开(公告)号：JPS57159082A
公开(公告)日：1982-10-01
申请号：JP4477481
申请日：1981-03-25
申请人： SHARP KK
发明人： HAYAKAWA TOSHIROU , TAKAGI TOSHIKIMI , OOTSUKA NAOTAKA
IPC分类号： H01L21/208 , H01S5/00 , H01S5/223 , H01S5/24
摘要： PURPOSE:To improve the life characteristic of the subject semiconductor laser element by a method wherein a P type clad layer or a photo guiding layer, an active layer, a buffer layer whereon no Se is doped, and an Se-doped N type clad layer are successively grown on a substrate. CONSTITUTION:A V-shape groove 27 is formed on the current control layer 22 which was grown on a P type GaAs substrate 21, and a Zn doped P type clad layer 23, a Ge-doped P type active layer 24, an Si-doped N type buffer layer 30, an Se-doped N type lad layer 25, and an Se-doped N type cap layer 26 are successively grown by lamination on the groove 27. As a result, the deterioration caused by the defect generating on the active layer and the Se-doped N type clad layer interface is suppressed, and the life of the subject laser element can be extended.

4. 发明专利

JPS6212678B2 失效
公开(公告)号：JPS6212678B2
公开(公告)日：1987-03-19
申请号：JP16932080
申请日：1980-11-28
申请人： SHARP KK
发明人： TAKAGI JUNKO , HAYAKAWA TOSHIRO , OOTSUKA NAOTAKA
IPC分类号： H01S5/00 , H01S5/223

5. 发明专利

JPS622715B2 失效
公开(公告)号：JPS622715B2
公开(公告)日：1987-01-21
申请号：JP4477481
申请日：1981-03-25
申请人： SHARP KK
发明人： HAYAKAWA TOSHIRO , TAKAGI JUNKO , OOTSUKA NAOTAKA
IPC分类号： H01L21/208 , H01S5/00 , H01S5/223 , H01S5/24

6. 发明专利

JPS57141987A SEMICONDUCTOR LASER ELEMENT 失效
公开(公告)号：JPS57141987A
公开(公告)日：1982-09-02
申请号：JP2790881
申请日：1981-02-26
申请人： SHARP KK
发明人： HAYAKAWA TOSHIROU , TAKAGI TOSHIKIMI , OOTSUKA NAOTAKA
IPC分类号： H01S5/00 , H01S5/22
摘要： PURPOSE:To suppress non-light emitting recombination of carriers through a deep level and to stabilize the long period driving of the element without joining an N type layer having the deep level to an active layer, by constituting all double heterogenuous junction planes by P type clad layers holding active layers. CONSTITUTION:On an N type GaAs substrate 2; a Te doped, N type, Ga0.45 Al0.55As clad layer 13; a Zn doped, P type, Ga0.5Al0.5As clad layer 14; a Zn doped, P type, Ga0.8Al0.2As active layer 15; a Zn doped, P type Ga0.5Al0.5As clad layer 16; and a Ge doped, P type GaAs cap layer 6 are laminated; and they are continuously grown epitaxially in a liquid phase. An Al2O3 film 7 is deposited on the entire surface to obtain an oxide film stripe structure. Then a window 9 is provided. A P side electrode 8 is deposited on the exposed layer 6 and on the film 7. An N side electrode 1 is formed on the badk surface of the substrate 2. Thus the P-N junction is formed at the interface between the N type clad layer 13 and the P type clad layer 14, the carriers are inputted into the active layer 15, and the laser operation is performed.

7. 发明专利

JPS57103385A SEMICONDUCTOR LASER ELEMENT 失效
公开(公告)号：JPS57103385A
公开(公告)日：1982-06-26
申请号：JP18009080
申请日：1980-12-18
申请人： SHARP KK
发明人： HAYAKAWA TOSHIROU , TAKAGI TOSHIKIMI , OOTSUKA NAOTAKA
IPC分类号： H01L33/12 , H01L33/14 , H01L33/24 , H01L33/30 , H01S5/00 , H01S5/223 , H01S5/24
摘要： PURPOSE:To stabilize the operation of the laser element of double heterostructure of Ga1-xAlxAs and to prolong the lifetime thereof by interposing a buffer layer with no added Te between an activated layer and a clad layer of added Te. CONSTITUTION:An N type GaAs current restricting layer 22 is formed on a P type GaAs substrate 21, a V shaped groove 27 is provided by applying anisotropic etching thereto and a P type Ga0.62Al0.28As activated layer 24 with added Ge is laid on a P type Ga0.45Al0.55As clad layer 23 with Zn added whereby the crystallinity and flatness of the activated layer are improved. Next, an N type Ga0.45Al0.35As clad layer 25 with Te added is grown through the intermediary of an N type Ga0.82Al0.18As buffer layer 30 with Si added, which contains no Te, and the N type clad layer containing defects caused by Te and the activated layer promoting deterioration by re-connection of an electronic positive hole are separated from each other, whereby the deterioration is prevented. Then, an N type GaAs cap layer 26 with Te added and electrodes 1 and 8 are laminated and thereby the device is completed. The thickness of the activated layer 24 and of the buffer layer 30 is made maximum in the center of the V shaped groove and thus the light in the layer 24 is led effectively to the central part of the device.

8. 发明专利

JPH0211025B2 失效
公开(公告)号：JPH0211025B2
公开(公告)日：1990-03-12
申请号：JP17001080
申请日：1980-12-01
申请人： SHARP KK
发明人： HAYAKAWA TOSHIRO , YAMAMOTO SABURO , TAKAGI TOSHIKIMI , OOTSUKA NAOTAKA
IPC分类号： H01L21/208 , H01S5/00 , H01S5/24

9. 发明专利

JPS6062182A ELECTRODE STRUCTURE OF SEMICONDUCTOR LASER ELEMENT 失效
公开(公告)号：JPS6062182A
公开(公告)日：1985-04-10
申请号：JP17148283
申请日：1983-09-16
申请人： SHARP KK
发明人： OOTSUKA NAOTAKA , UEDA SADAAKI , TERAOKA YOSHICHIKA
IPC分类号： H01L21/52 , H01L21/58 , H01S5/00 , H01S5/042
摘要： PURPOSE:To increase the diebonding precision automatically in case of fixing electrodes on a heat sink by a method wherein locating patterns are formed on electrodes of semiconductor laser elements. CONSTITUTION:When electrodes 1 of semiconductor laser elements are provided on the upper and lower side of the element body in terms of the structure of the electrodes, two stripes 2 and 2' for pattern identification are formed on the surface of the electrodes. An this time, the width of stripes and the interval thereof are respectively specified to be 1-10mum and 50-250mum. In such a structure wherein the electrodes 1 of the laser elements are provided with two parallel stripes 2 and 2', a pattern may be identified by an optical means to be utilized as an useful locating data in die-bonding process. Resultantly the laser elements may be assembled automatically and easily.

10. 发明专利

JPS5791581A SEMICONDUCTOR LASER ELEMENT AND MANUFACTURE THEREFOR 失效
公开(公告)号：JPS5791581A
公开(公告)日：1982-06-07
申请号：JP16932080
申请日：1980-11-28
申请人： SHARP KK
发明人： TAKAGI JIYUNKOU , HAYAKAWA TOSHIROU , OOTSUKA NAOTAKA
IPC分类号： H01S5/00 , H01S5/223
摘要： PURPOSE:To improve the yield of elements by a method wherein a clad layer, active layer and light guide layer are successively laminated on a substrate and furthermore, an epitaxial growth layer with a W type striped groove being provided thereon is superimposed. CONSTITUTION:A clad layer 22, active layer 23, and light guide layer 24 are successively stacked on a substrate 21. Next, the first epitaxial growth layer 25 processed a W type striped groove at the layer 24 is superimposed. Furthermore, a buried layer 26 burying the striped groove and the second epitaxial growth layer 24 having a current path 28 located at the central section of the striped groove are superimposed. Furthermore, a P type electrode 30 and an N type electrode 29 are successively formed on both surfaces.

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