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1. 发明专利

JPS57117282A Equally multiplying image sensor 失效
标题翻译：均匀的图像传感器
公开(公告)号：JPS57117282A
公开(公告)日：1982-07-21
申请号：JP352581
申请日：1981-01-13
申请人： Ricoh Co Ltd
发明人： SEGAWA HIDEO , ITAGAKI MASAKUNI , ISHIWATARI TATSUMI
IPC分类号： H01L27/146 , H01L31/11
CPC分类号： H01L31/1105
摘要： PURPOSE:To make a condensing optical device of lens, etc., to be unnecessitated and to contrive to form a device in a small type by a method wherein an equally multiplying image sensor is constituted using a thin film photo transistor. CONSTITUTION:A metal film electrode layer 3 consisting of an Ni-Cr film 2a and an Au film 2b, an N type CdTe or Cd film 4, a P type CdTe film 5, an N type CdS film 6, and a transparent electrode film 7 are laminated in order on a substrate 1, the non laminated part is provided at a corner of this laminated body, a transparent insulating film 13 is covered thereon, a metal layer 14 is connected on the non laminated part thereof, and a transparent abrasion resistive layer 8 is covered on the whole to constitute the thin film photo transistor 9. When signals are applied in order to the thin film photo transistor 9 at first, electric charge is stored in this transistor, and when light is irradiated thereon during one circulation of scanning, electric charge corresponding to irradiated light quantity is discharged. When signals are applied thereon next, electric charge corresponding to discharged quantity thereof is charged again, and quantity of recharging current to flow at that time is detected as the video signal.
摘要翻译：目的：通过使用薄膜光电晶体管构成均匀的图像传感器的方法，使透镜等的聚光光学装置不需要并且能够形成小型的装置。构成：由Ni-Cr膜2a和Au膜2b，N型CdTe或Cd膜4，P型CdTe膜5，N型CdS膜6和透明电极膜构成的金属膜电极层3 7在基板1上依次层叠，非层叠部设置在该层叠体的角部，透明绝缘膜13被覆盖，金属层14连接在非层叠部上，透明的磨损电阻层8整体被覆盖以构成薄膜光电晶体管9.当首先向薄膜光电晶体管9施加信号时，在该晶体管中存储电荷，并且当在一个循环中照射光时扫描时，对应于照射光量的电荷被排出。当其上施加信号时，对应于其放电量的电荷被再次充电，并且检测当时的充电电流量作为视频信号。

2. 发明专利

JPS5783055A Thin film transistor 失效
标题翻译：薄膜晶体管
公开(公告)号：JPS5783055A
公开(公告)日：1982-05-24
申请号：JP15771480
申请日：1980-11-11
申请人： Ricoh Co Ltd
发明人： SAKURAI KOUICHI , ISHIWATARI TATSUMI , MORI KOUJI
IPC分类号： H01L51/05 , H01L21/331 , H01L27/12 , H01L29/72 , H01L29/73
CPC分类号： H01L29/72
摘要： PURPOSE:To reduce the dark current and to obtain the transistor with increased photo sensitivity by a method wherein an emitter and a collector are constituted with a CdS film, having a doped In or an excessive Cd, and a film of Te and the like, and a CdTe film is used as a base region. CONSTITUTION:A transparent conductive film 2 such as an SnO2 and the like is provided on a transparent substrate 1, made of quartz or the like, for example, whereon a photoelectric converting element of a facsimile and the like is formed. Then, on this conductive film 2, a CdS film 3 whereon 0.01-1mol% or thereabout of In is doped (or Cd in excess of the quantity of stoichiometry by 1- 10%) is laminated as an emitter region. Then, after a heat treatment has been performed at 300-600 deg.C, the CdTe film 4 is laminated under the condition wherein P type will be formed, and then a Te film 5 (or one of Cd, Ge, In and Al films) is laminated, and an electrode 6 such as Au and the like are formed at the upper section by performing an evaporation. Through these procedures, the characteristics suitable for the photo transistor can be obtained and, at the same time, the transistor having a large area or an arbitrary shape can also be manufactured easily.
摘要翻译：目的：为了减少暗电流，并通过其中发射极和集电极由具有掺杂In或过量Cd的CdS膜和Te等膜构成的方法来获得具有增加的光敏度的晶体管，并且使用CdTe膜作为基极区域。构成：例如在透明基板1上形成诸如SnO 2等的透明导电膜2，例如由石英等形成传真机等的光电转换元件。然后，在该导电膜2上，掺杂有0.01〜1mol％左右的In的CdS膜3（或超过化学计量量的10％以上的Cd）作为发射极区域。然后，在300-600℃进行热处理之后，在形成P型的条件下层叠CdTe膜4，然后将Te膜5（或Cd，Ge，In和Al 膜），并且通过进行蒸发在上部形成诸如Au等的电极6。通过这些方法，可以获得适合于光电晶体管的特性，并且同时也可以容易地制造具有大面积或任意形状的晶体管。

3. 发明专利

JPS5779664A Thin film transistor 失效
标题翻译：薄膜晶体管
公开(公告)号：JPS5779664A
公开(公告)日：1982-05-18
申请号：JP15514780
申请日：1980-11-06
申请人： Ricoh Co Ltd
发明人： MORI KOUJI , ISHIWATARI TATSUMI , SEGAWA HIDEO
IPC分类号： H01L29/73 , H01L21/331 , H01L29/72
CPC分类号： H01L29/72
摘要： PURPOSE:To facilitate the manufacture and to reduce the cost by piling up an N type CdS film and a P type CdTe film on an optically transparent substrate and by piling up Fe, Cd, Al and Ca or In films and an electrode to make a thin film transistor. CONSTITUTION:An N type CdS film 3 doped with impurities is deposited on an transparent conductive film on an optically transparent substrate 1 and is treated with heat. A P type CdTe film 4 doped with impurities is deposited and is treated with heat. On said film 4, an Al film, a Ca film and an In film or a CdTe film 5 are piled up over the entire surface, and a counter electrode 6 is provided. Hereby, it is possible to obtain a thin film phototransistor which is easy to be manufactured, can be formed in an arbitrary shape, has a small dark current and provides a sufficient photoelectric current when irradiated with light.
摘要翻译：目的：通过将N型CdS膜和P型CdTe膜堆叠在光学透明基板上并通过堆积Fe，Cd，Al和Ca或In膜和电极来促进制造和降低成本，从而使薄膜晶体管。构成：将掺杂有杂质的N型CdS膜3沉积在光学透明基板1上的透明导电膜上，并用热处理。沉积掺杂有杂质的P型CdTe膜4并用热处理。在所述膜4上，将Al膜，Ca膜和In膜或CdTe膜5堆积在整个表面上，并设置对电极6。因此，可以获得容易制造的薄膜光电晶体管，可以形成为任意形状，具有小的暗电流，并且在用光照射时提供足够的光电流。

4. 发明专利

JPS5753988A Manufacture of thin film transistor 失效
标题翻译：空值
公开(公告)号：JPS5753988A
公开(公告)日：1982-03-31
申请号：JP12895980
申请日：1980-09-17
申请人： Ricoh Co Ltd
发明人： SAKURAI KOICHI , ISHIWATARI TATSUMI , MORI KOJI
IPC分类号： H01L31/10 , H01L31/11
CPC分类号： H01L31/1105
摘要： PURPOSE:To obtain a thin film device which can be formed into an arbitrary configuration easily by a method wherein an emitter layer of a CdS or a semiconductor containing a CdS is treated exclusively and selectively in 300-600 deg.C, a base layer of a CdTe or a semiconductor containing a CdTe is not treated by heating, and proper metal film of Al etc. is organized as a collector. CONSTITUTION:An In2O3 2 is applied on a quartz glass 1 by evaporation and keeping the glass 1 at 250-300 deg.C a CdS or a semiconductor 3 containing CdS for an emitter is piled up to be 1-5mum thick. By the treatment at 300-600 deg.C that follows a dark current is decreased a photo current is increased. Treatment in O2 is effective. Next a layer for a base which is built of CdTe or the one which is changed to be N type by addition of In into CdTe or by addition of excess Cd into CdTe and a layer 4 which is changed to be P type by addition of Li etc. or by excess addition of Te are piled to be approximately 1-3mum thick 4, one among Al, In, Ga, Cd and Te is attached 5 for a collector, and Au electrode 6 is attached. By this constitution the device is built easily into an arbitrary configuration and enlargement in area and length can be obtained.
摘要翻译：目的：为了获得可以通过以下方法容易地形成任意构造的薄膜器件：其中CdS的发射极层或含有CdS的半导体在300-600℃内被专门地和选择性地处理，基底层 CdTe或含有CdTe的半导体不经加热处理，Al等的金属膜作为集电体组织。构成：通过蒸发将In2O3 2施加在石英玻璃1上，并保持玻璃1在250-300℃，将含有CdS的CdS或发射体的半导体3堆积为1-5μm厚。通过在300-600℃的处理，随着暗电流降低，光电流增加。 O2中的治疗是有效的。接下来是由CdTe构成的基底层或通过将In添加到CdTe中或通过将Cd添加到CdTe中而被改变为N型的层，以及通过添加Li而改变为P型的层4 等等或通过过量添加Te堆积为约1-3μm厚4，Al，In，Ga，Cd和Te中的一个附着5作为集电体，并且附接Au电极6。通过这种构造，可以容易地将该装置构建成任意构造，并且可以获得面积和长度的增大。

5. 发明专利

JP2009054139A Image processing management device, image processing system, image processing management method, image processing management program, and recording medium 有权
标题翻译：图像处理管理装置，图像处理系统，图像处理管理方法，图像处理管理程序和记录介质
公开(公告)号：JP2009054139A
公开(公告)日：2009-03-12
申请号：JP2008154521
申请日：2008-06-12
申请人： Ricoh Co Ltd , 株式会社リコー
发明人： ASAI TAKAHIRO , ISHIWATARI TATSUMI , OGASAWARA NORIHIKO
IPC分类号： G06F3/12
摘要： PROBLEM TO BE SOLVED: To allow print output accompanied by image processing without requiring any image processing function from a transmission source terminal of a print output instruction and an execution terminal of the print output when the print output accompanied by optional image processing is carried out. SOLUTION: The image processing system is provided with a network I/F 303 receiving print input information concerning an execution instruction for image formation, and a session management part 302 acquiring information about an image forming apparatus 1 executing image formation based on the print output information and generating information about execution of the image processing required in execution of the image formation. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：当伴随着可选图像处理的打印输出是允许伴随着图像处理的打印输出而不需要打印输出指令的发送源终端的任何图像处理功能和打印输出的执行终端时执行。解决方案：图像处理系统设置有接收关于图像形成的执行指令的打印输入信息的网络I / F 303，会话管理部分302获取关于基于图像形成的图像形成装置1执行图像形成的信息打印输出信息并生成关于执行图像形成所需的图像处理的执行的信息。版权所有（C）2009，JPO＆INPIT

6. 发明专利

JPS58202662A Picture reading device 失效
标题翻译：图片阅读器
公开(公告)号：JPS58202662A
公开(公告)日：1983-11-25
申请号：JP8490282
申请日：1982-05-21
申请人： Ricoh Co Ltd
发明人： ISHIWATARI TATSUMI , MORI KOUJI , ITAGAKI MASAKUNI , YOSHIDA TAIZOU
IPC分类号： G06K7/00 , G06T1/00 , H04N1/04 , H04N1/19 , H04N1/401 , H04N1/403
CPC分类号： H04N1/04
摘要： PURPOSE:To obtain a correcting data for an optical sensor, by providing a white color diffusion plate at the position of an original and binary coding and then storing the reflected light given from the diffusing plate. CONSTITUTION:A white color diffusion plate 3 is provided at the reading position of pictures, and the beams are irradiated from light sources 5a and 5b. The reflected light is detected by a photosensor 10 and digitized by an A/D converter to be stored in a memory. The memory is provided by an amount equivalent to a main scanning line of the sensor 10. That is, the memory stores the data in response to the variance of the sensor 10. This data is used to compensate the picture signal when an original 4 is actually read. This correction is carried out by reading the data out of the memory in response to the scan equivalent to a line. As a result, the photosensitive variance is eliminated for each photodetecting element of the sensor 10. Thus it is possible to reproduce pictures of good quality.
摘要翻译：目的：通过在原始和二进制编码的位置提供白色扩散板，然后存储从扩散板给出的反射光，获得光学传感器的校正数据。构成：在图像的读取位置设置白色扩散板3，并且从光源5a和5b照射光束。反射光由光电传感器10检测并被A / D转换器数字化以存储在存储器中。存储器由与传感器10的主扫描线相当的量提供。也就是说，存储器响应于传感器10的方差来存储数据。当原稿4为原始图像时，该数据用于补偿图像信号实际读通过响应于等同于一行的扫描从存储器读出数据来进行该校正。结果，对于传感器10的每个光电元件消除了光敏方差。因此，可以再现高质量的图像。

7. 发明专利

JPS5779675A Cds target substance and manufacture of cds film using cds target substance 失效
标题翻译： CDS目标物质和使用CDS目标物质的CDS膜的制造
公开(公告)号：JPS5779675A
公开(公告)日：1982-05-18
申请号：JP15514880
申请日：1980-11-06
申请人： Ricoh Co Ltd
发明人： SEGAWA HIDEO , ITAGAKI MASANORI , ISHIWATARI TATSUMI
IPC分类号： C01G11/02 , C23C14/06 , G03G5/08 , H01L31/0248 , H01L31/109 , H01L31/18
CPC分类号： H01L31/109
摘要： PURPOSE:To form a photodiode having good light response and small forward voltage by a method wherein CdTe films are stacked by evporation on a CdS film including In as an impurity and provided on a substrate. CONSTITUTION:In metal wires are regularly arranged in striped shape on the surface of a disk CdS target substrate 1 at fixed intervals for thermal treatment. The area ratio of CdS region and In region is decided in accordance with the amount of In doped in the CdS and the ratio of 10:1-1,000:1 is applied in general. The resistance value of the CdS film is controlled by the doped amount of In in the CdS. And CdTe films are stacked on the CdS film. In this way, a photodiode having good light response and small forward voltage can be obtained.
摘要翻译：目的：通过将CdTe膜作为杂质沉积在包含In的CdS膜上并通过提供在基板上的方法来形成通过其中CdTe膜堆叠而形成具有良好光响应和小正向电压的光电二极管。构成：在金属线中，以固定间隔规则排列成盘状的CdS靶基板1的表面，进行热处理。 CdS区域和In区域的面积比根据CdS中掺杂的In的量来决定，并且一般应用10:1-1,000:1的比例。 CdS膜的电阻值由CdS中的掺杂量控制。并且CdTe膜堆叠在CdS膜上。以这种方式，可以获得具有良好的光响应和小的正向电压的光电二极管。

8. 发明专利

JPS5766665A Image sensor 失效
标题翻译：图像传感器
公开(公告)号：JPS5766665A
公开(公告)日：1982-04-22
申请号：JP14247780
申请日：1980-10-14
申请人： Ricoh Co Ltd
发明人： ISHIWATARI TATSUMI , SEGAWA HIDEO , SAKURAI KOUICHI
IPC分类号： H01L27/146 , H01L31/10 , H04N5/335 , H04N5/374
CPC分类号： H01L27/14643
摘要： PURPOSE:To improve the yield of an image sensor at the manufacturing time and to obtain the image sensor of high quality by composing a matrix wire of a thin film multilayer wire. CONSTITUTION:A metallic conductor film 2 is formed in a desired pattern on a transparent substrare 1. Then, an insulating film 3 is formed by sputtering on the substrate 1, and a window 3a is formed by photoetching at the connecting part of a photodetector and a multilayer wire. Further, a multilayer wire metallic conductor film 4 is formed by a vacuum deposition method, a photo-etching method. A Te film 5, a CdTe film 6, a CdS film 7, a transparent electrode 8, e.g., SnO2, In2O5, etc., are sequentially laminated on the thin film multilayer wire and an Au light shielding film 9 is partly laminated further thereon, and a transparent protective film 10, e.g., Ta2O5 is eventually formed on the entire surface. The part designated by reference numeral 11 forms a photodiode, and the part 12 covered with the film 9 becomes a blocking diode.
摘要翻译：目的：提高制造时的图像传感器的产量，并通过组合薄膜多层线的矩阵线获得高质量的图像传感器。构成：在透明基体1上以期望的图案形成金属导体膜2.然后，通过溅射在基板1上形成绝缘膜3，并且在光电检测器的连接部分处通过光刻形成窗口3a，多层线。此外，通过真空沉积法，光蚀刻法形成多层金属线状导体膜4。 Te膜5，CdTe膜6，CdS膜7，透明电极8（例如SnO 2，In 2 O 5等）依次层叠在薄膜多层布线上，并且Au遮光膜9进一步部分层压在其上，并且最终在整个表面上形成透明保护膜10，例如Ta 2 O 5。附图标记11表示的部分形成光电二极管，被膜9覆盖的部分12成为阻塞二极管。

9. 发明专利

JPS5766663A Image sensor 失效
标题翻译：图像传感器
公开(公告)号：JPS5766663A
公开(公告)日：1982-04-22
申请号：JP14203380
申请日：1980-10-13
申请人： Ricoh Co Ltd
发明人： ISHIWATARI TATSUMI , SEGAWA HIDEO , SAKURAI KOUICHI
IPC分类号： H01L27/146 , H01L31/10 , H04N5/335 , H04N5/374
CPC分类号： H01L27/14643
摘要： PURPOSE:To facilitate matrix wiring between a metal conductor film and an external wiring by means of a tape carrier, by forming a minute pattern by means of the metal conductor film on a substrate. CONSTITUTION:A metal conductor film 12 of Au is formed on an NiCr film of 200-600Angstrom formed as a ground for increasing the bonding strength with a substrate 11. Moreover formed by means of vacuum evaporation or sputtering is a Te film 13, a CdTe film 14, a CdS film 15, a transparent electrode film 16 of SnO2 or In2O5, a light-screening film 17 of Au and a transparent protecting film 18 of Ta2O5. In the parts formed by laminating the abovementioned films, a part 19 consitutes a photodiode, while a part 20 covered with the light-screening film 17 constitutes a blocking diode. The light-receiving element thus formed is connected with a wiring conductor formed on a tape carrier, thereby to conduct matrix wiring.
摘要翻译：目的：通过在载体上利用金属导体膜形成微小的图案，便于通过带状载体在金属导体膜和外部布线之间的矩阵布线。构成：在200-600Ang的NiCr膜上形成Au的金属导体膜12，作为提高与基板11的接合强度的接地。此外，通过真空蒸镀或溅射形成Te Te 13，CdTe 膜14，CdS膜15，SnO 2或In 2 O 5的透明电极膜16，Au的遮光膜17和Ta 2 O 5的透明保护膜18。在通过层压上述膜形成的部分中，部分19构成光电二极管，而被遮光膜17覆盖的部分20构成阻塞二极管。这样形成的光接收元件与形成在载带上的布线导体连接，从而进行矩阵布线。

10. 发明专利

JPS5752182A Thin film transistor 失效
标题翻译：薄膜晶体管
公开(公告)号：JPS5752182A
公开(公告)日：1982-03-27
申请号：JP12835980
申请日：1980-09-16
申请人： Ricoh Co Ltd
发明人： ISHIWATARI TATSUMI , ITAGAKI MASAKUNI , SAKURAI KOUICHI
IPC分类号： H01L31/10 , H01L21/331 , H01L29/73 , H01L31/11
CPC分类号： H01L31/1105
摘要： PURPOSE:To obtain a thin film type bipolar transistor having high stability, high reliability and high sensitivity by enabling to form an arbitrary shape with ready manufacture through the employment of CdTe film. CONSTITUTION:A transparent conductive film 2, e.g., In2O3 or the like is formed on a phototransmissive substrate 1, and an N type CdTe film 3 is laminated as an emitter region by a sputtering method or vacuum deposition method or the like. Then, P type CdTe film 4 and an N type CdTe film 5 are sequentially laminated in the same method on an N type CdTe film 3 as base and collector regions. Then, the electrode 6 made of gold or the like is deposited thereon. In this manner, a phototransistor of high sensitivity can be formed by the emission of the light.
摘要翻译：目的：通过使用CdTe膜，可以通过使用即将制造的任意形状获得具有高稳定性，高可靠性和高灵敏度的薄膜型双极晶体管。构成：在光透射性基板1上形成例如In 2 O 3等透明导电膜2，通过溅射法或真空蒸镀法等将N型CdTe膜3层叠成发射极区域。然后，在作为基极和集电极区域的N型CdTe膜3上，以相同的方法依次层叠P型CdTe膜4和N型CdTe膜5。然后，将由金等制成的电极6沉积在其上。以这种方式，可以通过发射光来形成高灵敏度的光电晶体管。

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