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1. 发明专利

JP2006126357A Array waveguide diffraction grating type wavelength multiplexer/demultiplexer 有权
$Array waveguide diffraction grating type wavelength multiplexer/demultiplexer$
标题翻译：阵列波导衍射光栅类型波长多路复用器/解复用器
公开(公告)号：JP2006126357A
公开(公告)日：2006-05-18
申请号：JP2004312728
申请日：2004-10-27
申请人： Nippon Telegr & Teleph Corp , Ntt Electornics Corp , エヌティティエレクトロニクス株式会社 , 日本電信電話株式会社
发明人： HIDA YASUHIRO , KAMITOKU MASAKI , KITO TSUTOMU , TAKAHASHI HIROSHI , HIMENO AKIRA
IPC分类号： G02B6/12
摘要： PROBLEM TO BE SOLVED: To provide an array waveguide diffraction grating type wavelength multiplexer/demultiplexer which suppresses the tilt in a loss wavelength spectrum, in a transmission region caused by aberrations in the slab waveguide or phase errors in a waveguide array. SOLUTION: The array waveguide diffraction grating type wavelength multiplexer/demultiplexer is equipped with an input core width adjusting part in an input channel waveguide, in a connecting part between the input channel waveguide and an input slab waveguide, and with an output core width adjusting part in an output channel waveguide, in a connecting part between the output channel waveguide and an output slab waveguide, wherein the shapes of the input core width adjusting part and the output core width adjusting part are controlled to flatten the loss wavelength spectrum from the output channel waveguide, and at least one of the output channel waveguides is inclined, with respect to a direction facing the center of the connecting part between the waveguide array and the output slab waveguide and laid so as to suppress the inclination to be small in the loss wavelength spectrum. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种阵列波导衍射光栅型波长多路复用器/解复用器，其抑制由平板波导中的像差引起的透射区域中的损耗波长光谱中的倾斜或波导阵列中的相位误差。解决方案：阵列波导衍射光栅类型波长多路复用器/解复用器在输入通道波导中在输入通道波导和输入平板波导之间的连接部分中配备有输入芯宽度调节部分，并且具有输出核心在输出通道波导中的输出通道波导和输出平板波导之间的连接部分中的宽度调节部分，其中输入芯宽度调节部分和输出芯宽度调节部分的形状被控制以使来自输出通道波导和输出通道波导中的至少一个相对于面向波导阵列和输出平板波导之间的连接部分的中心的方向倾斜，并被铺设以便抑制倾斜度小于损失波长谱。版权所有（C）2006，JPO＆NCIPI

2. 发明专利

JP2005241915A Optical waveguide and manufacturing method thereof 有权
标题翻译：光波导及其制造方法
公开(公告)号：JP2005241915A
公开(公告)日：2005-09-08
申请号：JP2004050918
申请日：2004-02-26
申请人： Nippon Telegr & Teleph Corp , Ntt Electornics Corp , エヌティティエレクトロニクス株式会社 , 日本電信電話株式会社
发明人： KAMITOKU MASAKI , SHIBATA TOMOHIRO , SUGITA AKIO , KAWASHIMA KOJI
IPC分类号： G02B6/122 , G02B6/13
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing an optical waveguide which allows a structure for reducing branching loss and a structure of ordinary optical waveguides to be simultaneously and easily manufactured with high reproducibility. SOLUTION: When a structure wherein the thickness of a core layer 3 in a thickness direction is varied is formed in a gap part between branching optical waveguides in the vicinity of a branch structure, a mask pattern and an exposure condition are selected so as to cause a resist 4 to remain in the gap part between waveguides of a branching waveguide pattern when forming a resist pattern by using an exposure mask 5, and the resist pattern is so formed that the thickness of the remaining resist is reduced according to a distance away from the branch part, and then the resist pattern is taken as a dry etching mask to dry-etch a core layer 3 and a clad layer 2. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种制造光波导的方法，其允许以高再现性同时且容易地制造用于减少分支损耗的结构和普通光波导的结构。解决方案：当在分支结构附近的分支光波导之间的间隙部分中形成厚度方向上的芯层3的厚度变化的结构时，选择掩模图案和曝光条件，为了在通过使用曝光掩模5形成抗蚀剂图案时使抗蚀剂4保留在分支波导图案的波导之间的间隙部分中，并且抗蚀剂图案被形成为使得其余抗蚀剂的厚度根据距离分支部分的距离，然后将抗蚀剂图案作为干蚀刻掩模，以干蚀刻芯层3和包层2。版权所有（C）2005，JPO＆NCIPI

3. 发明专利

JP2013051319A Method of manufacturing optical semiconductor laser element 审中-公开
标题翻译：制造光学半导体激光元件的方法
公开(公告)号：JP2013051319A
公开(公告)日：2013-03-14
申请号：JP2011188748
申请日：2011-08-31
申请人： Nippon Telegr & Teleph Corp , 日本電信電話株式会社 , Ntt Electornics Corp , Nttエレクトロニクス株式会社
发明人： FUJIWARA NAOKI , KAMITOKU MASAKI , KAWAGUCHI NOBUHIRO
IPC分类号： H01S5/026
摘要： PROBLEM TO BE SOLVED: To reduce variation in wavelength in the vicinity of a selective growth mask by letting a modulator layer regrow in a butt joint regrowth step.SOLUTION: By setting growth pressure conditions to 50 Torr or less when a modulator layer is regrown in a butt joint regrowth step, variation in composition and variation in film thickness can be suppressed, and thereby variation in wavelength is reduced.
摘要翻译：要解决的问题：通过使调制器层在对接再生长步骤中再生长来减少选择性生长掩模附近的波长变化。解决方案：通过在对接再生长步骤中重新生长调制层时，通过将生长压力条件设定为50乇以下，可以抑制组成的变化和膜厚的变化，从而降低波长的变化。版权所有（C）2013，JPO＆INPIT

4. 发明专利

JP2007240781A Planar optical waveguide circuit and manufacturing method thereof 有权
标题翻译：平面光波导电路及其制造方法
公开(公告)号：JP2007240781A
公开(公告)日：2007-09-20
申请号：JP2006061841
申请日：2006-03-07
申请人： Nippon Telegr & Teleph Corp , Ntt Electornics Corp , Nttエレクトロニクス株式会社 , 日本電信電話株式会社
发明人： OGAWA IKUO , YAMAZAKI YASUSHI , ABE ATSUSHI , KANEKO AKEMASA , KAMITOKU MASAKI , INOUE YASUYUKI , TERUI HIROSHI , OMORI YASUJI , NIITSU TOMOHARU , NAMEKAWA KAZUICHI
IPC分类号： G02B6/122 , G02B6/13 , G02B6/42
摘要： PROBLEM TO BE SOLVED: To manufacture an optical path conversion mirror of high precision by allowing a mirror to be laid out in an arbitrary position within a substrate. SOLUTION: A planar optical waveguide circuit includes: an optical waveguide comprising a core 105, an upper clad, and a lower clad; a mirror groove 140 which is formed in an end part of the optical waveguide deeper than the core of the optical waveguide and has an area having a smaller contact angle to a liquid resin and an adjacent area having a larger contact angle to the liquid resin, at least in a bottom thereof; and the optical path conversion mirror which converts an optical path of the optical waveguide upwardly or downwardly of a substrate and comprises a mirror supporting member 142 formed by hardening the liquid resin and a reflecting member 143 formed in contact with the mirror supporting member. The mirror supporting member is provided in contact with the area having the smaller contact angle and a wall surface of the mirror groove brought into contact with this area and is formed linearly symmetrical with respect to the optical path of the optical waveguide, within a substrate plane. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：通过将反射镜布置在基板内的任意位置来制造高精度的光路转换反射镜。解决方案：平面光波导电路包括：光波导，包括芯105，上包层和下包层; 形成在光波导的端部比光波导的芯更深的镜面槽140，具有与液体树脂接触角小的区域和与液体树脂接触角较大的相邻区域，至少在其底部; 以及光路转换镜，其将光波导的光路转换成基板的上下，并且包括通过使液体树脂硬化形成的反射镜支撑部件142和与反射镜支撑部件接触而形成的反射部件143。反射镜支撑构件设置成与接触角较小的区域接触，并且反射镜槽的壁面与该区域接触并且在衬底平面内相对于光波导的光路线性对称地形成。版权所有（C）2007，JPO＆INPIT

5. 发明专利

JP2014085533A Semiconductor optical modulation element 有权
标题翻译：半导体光学调制元件
公开(公告)号：JP2014085533A
公开(公告)日：2014-05-12
申请号：JP2012234741
申请日：2012-10-24
申请人： Nippon Telegr & Teleph Corp , 日本電信電話株式会社 , Ntt Electornics Corp , Nttエレクトロニクス株式会社
发明人： OGISO YOSHIHIRO , KAMITOKU MASAKI , IGA RYUZO , ARAI MASAKAZU , SATO TOMONARI , HIRONO TAKUO
IPC分类号： G02F1/025
摘要： PROBLEM TO BE SOLVED: To provide an n-SI-n-type heterostructure semiconductor optical modulation element capable of reducing electrical and optical loss of a semiconductor and allowing high-speed optical modulation.SOLUTION: In order to achieve high speed optical modulation by reducing electrical and optical loss and a high quality optical modulation signal, an optical modulation region includes an n-SI-n-type heterostructure formed by sandwiching with n-type cladding layers a semi-insulating (SI) core layer having an electron density and the density of an electron trapping dopant set so that a voltage drop is efficiently generated near the centre of the SI core layer, in a range where an ohmic value of 1×10Ω cm or more is secured. This structure confines propagation light near the centre of the SI layer.
摘要翻译：要解决的问题：提供能够减少半导体的电和光损耗并允许高速光调制的n-SI-n型异质结构半导体光调制元件。解决方案：为了通过减少来实现高速光调制光损耗和高质量的光调制信号，光调制区域包括通过与n型覆层夹着具有电子密度的半绝缘（SI）芯层形成的n-SI-n型异质结构，电子捕获掺杂剂的密度设定，使得在SI核心层的中心附近有效地产生电压降，其范围为欧姆值1×10＆OHgr; cm以上。这种结构将传播光限制在SI层中心附近。

6. 发明专利

JP2009122460A Optical wavelength multiplexer/demultiplexer circuit 有权
标题翻译：光波长多路复用器/解复用器电路
公开(公告)号：JP2009122460A
公开(公告)日：2009-06-04
申请号：JP2007297296
申请日：2007-11-15
申请人： Nippon Telegr & Teleph Corp , Ntt Electornics Corp , Nttエレクトロニクス株式会社 , 日本電信電話株式会社
发明人： KAMEI ARATA , HIDA YASUHIRO , KITO TSUTOMU , KAMITOKU MASAKI , TAMURA MUNEHISA , TAKAHASHI HIROSHI , NAGASHIMA SHIGEO
IPC分类号： G02B6/12
摘要： PROBLEM TO BE SOLVED: To provide an optical wavelength multiplexer/demultiplexer circuit composed of an array waveguide diffraction grating which has a broad and flat passband characteristic and a low wavelength dispersion characteristic, necessary for a high speed and high quality transmission, and also has an improved manufacturing stability and a low loss characteristic, as compared with a conventional type. SOLUTION: The connection part between first input/output waveguides 901 and a first slab waveguide 902, and the connection part between a second slab waveguide 904 and a second input/output waveguides 905 are shown in enlarged forms. The taper waveguides 1,006 are provided between the first input/output waveguides 901 and the first slab waveguide 902. A straight taper parts 1,007 are provided between the second slab waveguide 904 and the second input/output waveguides 905. The taper waveguide 1,006 are expanded in the direction toward array waveguides 903 and has a structure with no noncontinuous point of a derivative. The derivative is also zero at the connection point to the first slab waveguide 902. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种由具有宽且平坦的通带特性和低波长色散特性的阵列波导衍射光栅组成的光学波长多路复用器/解复用器电路，用于高速和高质量传输所必需的，以及与常规类型相比，还具有改进的制造稳定性和低损耗特性。解决方案：放大表示第一输入/输出波导901和第一平板波导902之间的连接部分以及第二平板波导904与第二输入/输出波导905之间的连接部分。锥形波导管1006设置在第一输入/输出波导901和第一平板波导902之间。直锥形部分1007设置在第二平板波导904和第二输入/输出波导905之间。锥形波导1006在朝向阵列波导903的方向，并且具有不具有导数不连续点的结构。导数在与第一平板波导902的连接点处也为零。版权所有：（C）2009，JPO＆INPIT

7. 发明专利

JP2007072133A Waveguide type band rejection filter 审中-公开
标题翻译：波导型带式防雷器
公开(公告)号：JP2007072133A
公开(公告)日：2007-03-22
申请号：JP2005258473
申请日：2005-09-06
申请人： Nippon Telegr & Teleph Corp , Ntt Electornics Corp , Nttエレクトロニクス株式会社 , 日本電信電話株式会社
发明人： TANAKA TAKUYA , ABE ATSUSHI , KOMINATO TOSHIMI , KAMITOKU MASAKI , YANAGISAWA MASAHIRO , NASU YUUKAI , IWATA TOSHIYUKI , INOUE YASUYUKI , MASUDA TAKAMITSU , KOMIYAMA TORU
IPC分类号： G02B6/12
摘要： PROBLEM TO BE SOLVED: To provide a waveguide type band rejection filter which has a large shielding efficiency, narrows a guard band by suppressing backscattering and backreflection, and suppresses reflection return light. SOLUTION: The waveguide type band rejection filter includes: a mode field diameter enlarging waveguide 102 that enlarges the mode field diameter of light made incident on an incident waveguide 101; a wide waveguide 103 in which the light with an enlarged mode field enters and in which a slant grating 107 is formed; a mode field diameter reducing waveguide 104 that reduces the mode field diameter of the light passed through the wide waveguide; a core that forms an emitting waveguide 105 for outputting the light with the reduced mode field diameter; and a clad in which the core is imbedded. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：为了提供一种屏蔽效率大的波导型带阻滤波器，通过抑制后向散射和背反射来减小保护频带，抑制反射返回光。解决方案：波导型带阻滤波器包括：放大入射在入射波导101上的光的模场直径的模场扩大波导102; 宽波导103，其中具有放大模场的光进入并且其中形成倾斜光栅107; 减小通过宽波导管的光的模场直径的模场直径减小波导104; 形成用于以减小模场直径输出光的发射波导105的芯; 和一个包裹核心嵌入。版权所有（C）2007，JPO＆INPIT

8. 发明专利

JP2013021139A Semiconductor laser 有权
标题翻译：半导体激光器
公开(公告)号：JP2013021139A
公开(公告)日：2013-01-31
申请号：JP2011153434
申请日：2011-07-12
申请人： Nippon Telegr & Teleph Corp , 日本電信電話株式会社 , Ntt Electornics Corp , Nttエレクトロニクス株式会社
发明人： FUJIWARA NAOKI , KAMITOKU MASAKI , KOBAYASHI WATARU , KADOWAKI KAYO
IPC分类号： H01S5/026
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor laser which can suppress weakening of breaking strength to an external force to improve manufacturing yield despite a structure in which an organic material having a low dielectric constant is inserted below an electrode.SOLUTION: The semiconductor laser comprises: an element body 10 including a semiconductor laser part 10a outputting light and a light modulation part 10b provided on an output side of the semiconductor laser part 10a for modulating the light on the same substrate. The light modulation part 10b includes: a light waveguide layer through which light is guided; buried layers 12, 13 provided adjacent to the light waveguide layer and each composed of an organic material having a low dielectric constant; a first insulation film 14 provided on surfaces of the buried layers 12, 13; and an upper electrode 16 provided on the first insulation film 14 for supplying electric signals to the light waveguide layer. The semiconductor laser comprises second insulation films 17 provided on a top face of the first insulation film 14 and on a top face of the upper electrode 16.
摘要翻译：要解决的问题：提供一种半导体激光器，其可以抑制断裂强度对外力的弱化，从而提高制造成品率，尽管将具有低介电常数的有机材料插入到电极下面的结构。解决方案：半导体激光器包括：元件体10，其包括输出光的半导体激光器部分10a和设置在半导体激光器部分10a的输出侧的光调制部分10b，用于调制同一基板上的光。光调制部10b包括：光引导通过的光波导层; 设置在光波导层附近并且各自由具有低介电常数的有机材料构成的掩埋层12,13; 设置在埋层12,13的表面上的第一绝缘膜14; 以及设置在第一绝缘膜14上用于向光波导层提供电信号的上电极16。半导体激光器包括设置在第一绝缘膜14的顶面和上电极16的顶面上的第二绝缘膜17.（C）2013，JPO和INPIT

9. 发明专利

JP2006330280A Optical circuit structure and optical module 有权
标题翻译：光电路结构与光模块
公开(公告)号：JP2006330280A
公开(公告)日：2006-12-07
申请号：JP2005152620
申请日：2005-05-25
申请人： Nippon Telegr & Teleph Corp , Ntt Electornics Corp , Nttエレクトロニクス株式会社 , 日本電信電話株式会社
发明人： WATANABE HIROSHI , KAMITOKU MASAKI , INOUE YASUYUKI , HIROTA YOSHINOBU , KAMEI ARATA , NAKANISHI YASUHIKO , OGAWA IKUO , IEMURA MITSUTAKA , HIMEI KEIJI
IPC分类号： G02B6/122
摘要： PROBLEM TO BE SOLVED: To provide an optical circuit structure and an optical module which reduce manufacturing costs and can be miniaturized. SOLUTION: The optical circuit structure includes a waveguide having a clad and a core, a filter insertion groove 32 which is formed in the clad and has an adhesive supplied thereto, and a groove 22 being a means which is disposed a prescribed distance apart from the filter insertion groove 21 and prevents the adhesive from flowing out of a prescribed area. COPYRIGHT: (C)2007,JPO&INPIT

10. 发明专利

JP2014022567A Semiconductor laser module 有权
标题翻译：半导体激光模块
公开(公告)号：JP2014022567A
公开(公告)日：2014-02-03
申请号：JP2012159864
申请日：2012-07-18
申请人： Nippon Telegr & Teleph Corp , 日本電信電話株式会社 , Ntt Electornics Corp , Nttエレクトロニクス株式会社
发明人： YOSHIMURA RYOKO , TAKESHITA TATSUYA , OKI AKIRA , MITSUHARA MANABU , SATO TOMONARI , KAMITOKU MASAKI , YONEYAMA MIKIO , YOSHIDA KAZUMASA
IPC分类号： H01S5/024 , H01S5/022
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor laser module which is widely used in TDLS (Tunable Diode Laser Spectroscopy), and uses a semiconductor DFB laser excellent in controllability and reliability, and has a structure capable of increasing δλ(current coefficient of oscillation wavelength).SOLUTION: A semiconductor laser module according to the present embodiment comprises a semiconductor laser carrier including a semiconductor laser chip, a heat sink and a sub-mount, and an electron cooling element. The semiconductor laser module further comprises a heat conduction adjustment plate between the sub-mount and the electron cooling element. Heat conductivity of a material of the heat conduction adjustment plate is lower than heat conductivity of a material of the sub-mount.
摘要翻译：要解决的问题：提供广泛用于TDLS（可调谐二极管激光光谱学）中的半导体激光器模块，并且使用具有优异的可控性和可靠性的半导体DFB激光器，并且具有能够增加δλ（振荡波长的电流系数）。解决方案：根据本实施例的半导体激光器模块包括半导体激光器载体，其包括半导体激光器芯片，散热器和副安装座以及电子冷却元件。半导体激光模块还包括在子安装座和电子冷却元件之间的导热调节板。导热调节板的材料的导热率低于副底座的材料的导热率。

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