专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明专利

JP2009065040A Magnetic material, and magnetoresistance element using it 审中-公开
标题翻译：磁性材料和使用它的磁阻元件
公开(公告)号：JP2009065040A
公开(公告)日：2009-03-26
申请号：JP2007232843
申请日：2007-09-07
申请人： National Institute Of Advanced Industrial & Technology , Tohoku Univ , 国立大学法人東北大学 , 独立行政法人産業技術総合研究所
发明人： KUBOTA HITOSHI , FUKUSHIMA AKIO , YAKUSHIJI HIROSHI , NAGAHAMA TARO , YUASA SHINJI , ANDO KOJI , OKANE MIKIHIKO , WATANABE YOSHIO , ANDO YASUO , MIYAZAKI TERUNOBU
IPC分类号： H01F10/16 , H01F1/14 , H01L21/8246 , H01L27/105 , H01L43/08
摘要： PROBLEM TO BE SOLVED: To provide a magnetic material having both low magnetization and a low damping constant. SOLUTION: This magnetic material has a composition of (Co-Fe) a X b B c (a composition ratio of Co to Fe is optional, a=45-80%, b=5-25% and c=15-30%) prepared by adding an element X (Cr or V) to a Co-Fe-B alloy. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供具有低磁化强度和低阻尼常数的磁性材料。＆lt; P＆gt;解决方案：该磁性材料具有（Co-Fe）组合物，其组成比为Co至通过向Co-Fe-B合金中添加元素X（Cr或V）制备，Fe是任选的，a = 45-80％，b = 5-25％，c = 15-30％）。版权所有（C）2009，JPO＆INPIT

2. 发明专利

JP2008004891A Spin transistor 有权
标题翻译：旋转晶体管
公开(公告)号：JP2008004891A
公开(公告)日：2008-01-10
申请号：JP2006175560
申请日：2006-06-26
申请人： National Institute Of Advanced Industrial & Technology , Tohoku Univ , 国立大学法人東北大学 , 独立行政法人産業技術総合研究所
发明人： OKANE MIKIHIKO , MIYAZAKI TERUNOBU , SAKURABA YUUYA , ANDO YASUO , KUBOTA HITOSHI
IPC分类号： H01L29/82
摘要： PROBLEM TO BE SOLVED: To provide a spin transistor which can control currents well. SOLUTION: In the spin transistor, a double ferromagnetic tunnel junction is formed by a source layer 1 constituted by half metal, an insulating layer 2, a gate layer 3 constituted by half metal, an insulating layer 4 and a drain layer 5 constituted by half metal, and further, a source electrode 6, a gate electrode 7 and a drain electrode 8 are provided. By constituting the gate layer 3 with the half metal, a rate of change of resistance of the spin transistor due to an external magnetic field becomes large, so that a current ratio provided by on/off of gate voltage is large. As a result, the currents flowing through the spin transistor can be controlled well. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供可以很好地控制电流的自旋晶体管。解决方案：在自旋晶体管中，双铁磁隧道结由由半金属构成的源极层1，绝缘层2，由半金属构成的栅极层3，绝缘层4和漏极层5 由半金属构成，并且还设置有源电极6，栅电极7和漏电极8。通过用半金属构成栅极层3，由外部磁场引起的自旋晶体管的电阻变化率变大，使得由栅极电压的导通/截止而提供的电流比大。结果，可以很好地控制流过自旋晶体管的电流。版权所有（C）2008，JPO＆INPIT

3. 发明专利

JP2007300025A Tunnel magnetic resistance element 审中-公开
标题翻译：隧道电磁元件
公开(公告)号：JP2007300025A
公开(公告)日：2007-11-15
申请号：JP2006128492
申请日：2006-05-02
申请人： National Institute Of Advanced Industrial & Technology , Tohoku Univ , 国立大学法人東北大学 , 独立行政法人産業技術総合研究所
发明人： OKANE MIKIHIKO , MIYAZAKI TERUNOBU , SAKURABA YUUYA , ANDO YASUO , KUBOTA HITOSHI
IPC分类号： H01L43/08 , H01F10/32
摘要： PROBLEM TO BE SOLVED: To provide a TMR element which can obtain a TMR ratio exceeding 200%, without dependency on manufacturing equipment.
SOLUTION: Halfmetal layers 1, 2 are composed of Co
2 MnSi, and an insulating layer of an amorphous structure is used. Thus, the insulating layer of an amorphous structure is used whose productivity of a TMR element does not vary dependent on manufacturing equipment. Consequently, a TMR element without dependency on the equipment can be manufactured. Additionally, the insulating layer 3 of an amorphous structure is sandwiched by the halfmetal layers 1, 2 made up of Co
2 MnSi, and this eliminates the scattering of electrons in a tunnel barrier when a current flows, then, a high TMR ratio can be obtained exceeding 570%.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供可以获得TMR比超过200％的TMR元件，而不依赖于制造设备。解决方案：半金属层1,2由Co 2 MnSi组成，并且使用非晶结构的绝缘层。因此，采用无定形结构的绝缘层，TMR元件的生产率不依赖于制造设备而变化。因此，可以制造不依赖于设备的TMR元件。此外，非晶结构的绝缘层3被由Co 2 MnSi构成的半金属层1,2夹在中间，这消除了当电流流动时隧道势垒中的电子散射，然后，可以获得超过570％的高TMR比。版权所有（C）2008，JPO＆INPIT

4. 发明专利

JP2008218641A Tunnel magnetoresistive element 审中-公开
标题翻译：隧道磁电元件
公开(公告)号：JP2008218641A
公开(公告)日：2008-09-18
申请号：JP2007052767
申请日：2007-03-02
申请人： Tohoku Univ , 国立大学法人東北大学
发明人： OKANE MIKIHIKO , MIYAZAKI TERUNOBU , SAKURABA YUUYA , HATTORI MASASHI , ANDO YASUO
IPC分类号： H01L43/08 , G01R33/09 , G11B5/39 , H01F10/16 , H01F10/30 , H01F41/28 , H01F41/32
摘要： PROBLEM TO BE SOLVED: To provide a tunnel magnetoresistive element in which at least one ferromagnetic body comprises a full Heusler alloy having spin polarizability of 100%.
SOLUTION: The tunnel magnetoresistive element comprises a first ferromagnetic body, a second ferromagnetic body, and an insulator sandwiched between these ferromagnetic bodies wherein at least one ferromagnetic body has a single crystal of full Heusler alloy grown epitaxially on the (100) face of a base material and a thin Mg layer is provided between the full Heusler alloy and the insulator. Preferably, the full Heusler alloy is an intermetallic compound represented by a composition formula X
2 YZ. In particular, the full Heusler alloy is preferably composed of Co
2 MnSi.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种隧道磁阻元件，其中至少一个铁磁体包括具有100％的自旋极化率的完整Heusler合金。隧道磁阻元件包括第一铁磁体，第二铁磁体和夹在这些铁磁体之间的绝缘体，其中至少一个铁磁体具有在（100）面上外延生长的完整Heusler合金的单晶在整个Heusler合金和绝缘体之间提供基材和薄Mg层。优选地，完整的Heusler合金是由组成式X 2 YZ表示的金属间化合物。特别地，完整的Heusler合金优选由Co 2 MnSi组成。版权所有（C）2008，JPO＆INPIT

5. 发明专利

JP2012190914A Magnetoresistance effect element and magnetic device 审中-公开
标题翻译：磁阻效应元件和磁性器件
公开(公告)号：JP2012190914A
公开(公告)日：2012-10-04
申请号：JP2011051678
申请日：2011-03-09
申请人： Tohoku Univ , 国立大学法人東北大学
发明人： OKANE MIKIHIKO , SATO JO , NAGANUMA HIROSHI , ANDO YASUO
IPC分类号： H01L43/10 , G11B5/39 , H01L43/08
CPC分类号： G11B5/3906 , G11B2005/3996
摘要： PROBLEM TO BE SOLVED: To provide a magnetoresistance effect element exhibiting a high MR ratio of 50% or more at room temperature and capable of achieving a recording density of several Tbit/inch, and to provide a magnetic device.SOLUTION: The magnetoresistance effect element has a first half metal ferromagnetic layer 13 and a second half metal ferromagnetic layer 15 composed of a CoFeMnSi Heusler alloy (x=0.0 to 1.0) and having a thickness of 2-20 nm, and a nonmagnetic metal layer 14 composed of Ag sandwiched therebetween. The magnetoresistance effect element has an underlying layer 12 composed of a Cr/Ag layer under the first half metal ferromagnetic layer 13, and has an antioxidation layer 16 composed of an Ag/Ru layer on the second half metal ferromagnetic layer 15.
摘要翻译：要解决的问题：为了提供在室温下具有50％以上的高MR比的磁阻效应元件，并且能够实现几个Tbit / inch的记录密度 2 < SP>，并提供磁性装置。解决方案：磁阻效应元件具有由Co 2 Fe x Si-Heusler合金（x = 0.0〜1.0），厚度为2-20nm，非磁性金属层14由 Ag夹在中间。磁阻效应元件具有由第一半金属铁磁层13下的Cr / Ag层构成的下层12，并且在第二半金属铁磁层15上具有由Ag / Ru层构成的抗氧化层16。版权所有（C）2013，JPO＆INPIT

6. 发明专利

JP2012169450A Spin transistor and magnetic device 审中-公开
标题翻译：旋转晶体管和磁性器件
公开(公告)号：JP2012169450A
公开(公告)日：2012-09-06
申请号：JP2011029048
申请日：2011-02-14
申请人： Tohoku Univ , 国立大学法人東北大学
发明人： OKANE MIKIHIKO , OHIRA YUSUKE , NAGANUMA HIROSHI , ANDO YASUO
IPC分类号： H01L29/82 , H01L21/8246 , H01L27/105 , H01L29/66
摘要： PROBLEM TO BE SOLVED: To provide a spin transistor which controls an output current by a relative angle of magnetization and also controls the output current by applying a voltage to a gate layer, and to provide a magnetic memory in which the spin transistor is integrated and a magnetic device such as a nonvolatile logic circuit.SOLUTION: A source layer 14, a gate layer 13, and a drain layer 15 are made of half metallic Heusler alloy. A first insulation layer 16 interposed between the source layer 14 and the gate layer 13 and a second insulation layer 17 interposed between the gate layer 13 and the drain layer 15 are made of magnesium oxide (MgO). A gate structure, which includes the gate layer 13 and applies a gate voltage to the gate layer 13 through electric capacitance, is made of chromium/magnesium oxide/half metallic Heusler alloy.
摘要翻译：要解决的问题：提供一种控制输出电流相对磁化角度的自旋晶体管，并通过向栅极层施加电压来控制输出电流，并提供一种磁存储器，其中自旋晶体管集成了诸如非易失性逻辑电路的磁性装置。解决方案：源极层14，栅极层13和漏极层15由半金属Heusler合金制成。介于源极层14和栅极层13之间的第一绝缘层16和介于栅极层13和漏极层15之间的第二绝缘层17由氧化镁（MgO）制成。包括栅极层13并通过电容将栅极电压施加到栅极层13的栅极结构由铬/氧化镁/半金属Heusler合金制成。版权所有（C）2012，JPO＆INPIT

7. 发明专利

JP2011014602A Double barrier ferromagnetic tunnel junction and magnetic device 审中-公开
标题翻译：双重障碍物电磁隧道结和磁性装置
公开(公告)号：JP2011014602A
公开(公告)日：2011-01-20
申请号：JP2009155359
申请日：2009-06-30
申请人： Tohoku Univ , 国立大学法人東北大学
发明人： JIANG LIXIAN , NAGANUMA HIROSHI , OKANE MIKIHIKO , ANDO YASUO
IPC分类号： H01L43/08 , G01R33/09 , G11B5/39 , H01F10/14 , H01F10/16 , H01F10/32 , H01L21/8246 , H01L27/105 , H01L43/10
摘要： PROBLEM TO BE SOLVED: To provide a double barrier ferromagnetic tunnel junction having a low resistance and capable of obtaining a TMR effect of 1,000% or more at room temperature, and to provide a magnetic device using the double barrier ferromagnetic tunnel junction.SOLUTION: A double barrier ferromagnetic tunnel junction is structured such that a structure of a foundation layer/ferromagnetic layer 1/insulating layer 1/ferromagnetic layer 2/insulating layer 2/ferromagnetic layer 3/upper layer is laminated on a substrate material, the magnetization of the ferromagnetic layer 1 is fixed by the foundation layer, while the magnetization of the ferromagnetic layer 3 is fixed by the upper layer, and the ferromagnetic layer 2 functions as a magnetic free layer. In the double barrier ferromagnetic tunnel junction, the ferromagnetic layer 2 is formed of a CoFeB alloy and is made thin to have a film thickness of 0.5-1.4 nm, the insulating layers 1 and 2 are formed of MgO, and the double barrier ferromagnetic tunnel junction is subjected to a thermal treatment process at a temperature of about 250-400°C, so that a low resistance and a giant TMR ratio exceeding 1,000% can be obtained.
摘要翻译：要解决的问题：提供具有低电阻并能够在室温下获得1000％或更高的TMR效应的双阻挡铁磁隧道结，并提供使用双阻挡铁磁隧道结的磁性装置。解决方案：A 双阻挡铁磁隧道结被构造为使得基底层/铁磁层1 /绝缘层1 /铁磁层2 /绝缘层2 /铁磁层3 /上层的结构层叠在基底材料上，铁磁性层1由基础层固定，而铁磁层3的磁化被上层固定，铁磁层2起到无磁性层的作用。在双阻挡铁磁隧道结中，铁磁层2由CoFeB合金形成，并且被制成薄至具有0.5-1.4nm的膜厚度，绝缘层1和2由MgO形成，并且双阻挡铁磁隧道接头在约250-400℃的温度下进行热处理，从而可以获得超过1000％的低电阻和巨大的TMR比。

8. 发明专利

JP2017085076A Ｍｎ系強磁性薄膜およびその製造方法、ならびにＭｎ系強磁性薄膜を有する磁気トンネル接合素子审中-公开
公开(公告)号：JP2017085076A
公开(公告)日：2017-05-18
申请号：JP2016067011
申请日：2016-03-30
申请人：国立大学法人東北大学 , Tohoku Univ
发明人： OKANE MIKIHIKO , ANDO YASUO , KURIMOTO YUTA , WATABE KENTA , KUBOTA MIHO
IPC分类号： H01F10/16 , G01R33/09 , H01F10/32 , H01F41/18 , H01L21/8246 , H01L27/105 , H01L29/82 , H01L43/08 , H01L43/10 , H01L43/12 , H03B15/00
摘要：【課題】高い熱安定性と低い磁気緩和定数とを有し、容易かつ安定して製造することができる、Mn系強磁性薄膜およびその製造方法、ならびにそのMn系強磁性薄膜を有する磁気トンネル接合素子を提供する。【解決手段】Mn系強磁性薄膜は、Mnと、Alと、Co,Fe,Cr,NiおよびCuのうちのいずれか1つまたは2つ以上とを有し、L10型構造で、磁化容易軸が膜の表面に対して垂直に配向している。また、スパッタリングにより、MnAl合金層の表面に、Co,Fe,Cr,NiおよびCuのうちのいずれか1つまたは2つ以上を有する金属を成膜することにより製造される。【選択図】図1

9. 发明专利

JP2014038894A Multiferroic thin film, and device arranged by use thereof 审中-公开
标题翻译：多层薄膜及其使用的装置
公开(公告)号：JP2014038894A
公开(公告)日：2014-02-27
申请号：JP2012179119
申请日：2012-08-11
申请人： Tohoku Univ , 国立大学法人東北大学
发明人： NAGANUMA HIROSHI , HUSNE ARA BEGUM , KUBOTA MIHO , SATO TAKASHI , OKANE MIKIHIKO , ANDO YASUO
IPC分类号： H01L43/08 , G02F1/01 , G02F1/09 , H01L21/8246 , H01L27/105 , H01L29/82 , H01L43/10
摘要： PROBLEM TO BE SOLVED: To provide a multiferroic thin film having a Curie temperature equal to or higher than a room temperature and a large magnetization, and to provide a device arranged by use of the multiferroic thin film.SOLUTION: A multiferroic thin film comprises a Bi(FeCo)Othin film (the composition x satisfies 0
摘要翻译：要解决的问题：提供具有等于或高于室温和大的磁化强度的居里温度的多铁性薄膜，并提供使用多铁性薄膜布置的器件。解决方案：多铁性薄膜包括 Bi（FeCo）Othin膜（组成x满足0

10. 发明专利

JP2013105825A Biomagnetic sensor and manufacturing method thereof 有权
标题翻译：生物传感器及其制造方法
公开(公告)号：JP2013105825A
公开(公告)日：2013-05-30
申请号：JP2011247362
申请日：2011-11-11
申请人： Konica Minolta Advanced Layers Inc , コニカミノルタアドバンストレイヤー株式会社 , Tohoku Univ , 国立大学法人東北大学
发明人： NISHIKAWA TAKAO , ARAKAWA HIROAKI , ANDO YASUO , OKANE MIKIHIKO , FUJIWARA KOSUKE
IPC分类号： H01L43/08 , G01R33/09 , H01L43/12
摘要： PROBLEM TO BE SOLVED: To achieve high sensitivity of a tunnel magnetoresistive element in a biomagnetic sensor using the tunnel magnetoresistive element and measure biomagnetism with high accuracy by the sensor.SOLUTION: In a zero magnetic field, an easy magnetization axis 4a of a ferromagnetic metal magnetization free layer 4 is at a twisted position with respect to an easy magnetization axis 6a of a ferromagnetic metal magnetization fixed layer 6. Preferably, the twist angle is between 45 degrees and 135 degrees. The fixed layer is laminated at a position upper than the free layer, and the area of the fixed layer is arranged smaller than the area of the free layer. The free layer and the fixed layer each comprise three layers -- a first ferromagnetic body, an ultra thin non-magnetic metal layer, and a second ferromagnetic body -- and have an anti-parallel coupling film structure having exchange coupling force, in the structure the magnetization direction of the first ferromagnetic body and the magnetization direction of the second ferromagnetic body with the ultra thin non-magnetic metal layer interposed therebetween becoming anti-parallel. MgO and Ru are used as for an insulation layer and the ultra thin non-magnetic metal layer respectively.
摘要翻译：要解决的问题：使用隧道磁阻元件实现生物磁传感器中隧道磁阻元件的高灵敏度，并通过传感器以高精度测量生物磁性。解决方案：在零磁场中，强磁性金属磁化自由层4的易磁化轴线4a相对于强磁性金属磁化固定层6的易磁化轴线6a处于扭转位置。优选地，扭转角度在45度到135度之间。固定层层叠在自由层上方的位置，固定层的面积比自由层的面积小。自由层和固定层各自包括三层 - 第一铁磁体，超薄非磁性金属层和第二铁磁体 - 并具有具有交换耦合力的反平行耦合膜结构，在结构化第一铁磁体的磁化方向和第二铁磁体的磁化方向与其间的超薄非磁性金属层成为反平行。 MgO和Ru分别用作绝缘层和超薄非磁性金属层。版权所有（C）2013，JPO＆INPIT

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式