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1. 发明专利

JP2012169450A Spin transistor and magnetic device 审中-公开
标题翻译：旋转晶体管和磁性器件
公开(公告)号：JP2012169450A
公开(公告)日：2012-09-06
申请号：JP2011029048
申请日：2011-02-14
申请人： Tohoku Univ , 国立大学法人東北大学
发明人： OKANE MIKIHIKO , OHIRA YUSUKE , NAGANUMA HIROSHI , ANDO YASUO
IPC分类号： H01L29/82 , H01L21/8246 , H01L27/105 , H01L29/66
摘要： PROBLEM TO BE SOLVED: To provide a spin transistor which controls an output current by a relative angle of magnetization and also controls the output current by applying a voltage to a gate layer, and to provide a magnetic memory in which the spin transistor is integrated and a magnetic device such as a nonvolatile logic circuit.SOLUTION: A source layer 14, a gate layer 13, and a drain layer 15 are made of half metallic Heusler alloy. A first insulation layer 16 interposed between the source layer 14 and the gate layer 13 and a second insulation layer 17 interposed between the gate layer 13 and the drain layer 15 are made of magnesium oxide (MgO). A gate structure, which includes the gate layer 13 and applies a gate voltage to the gate layer 13 through electric capacitance, is made of chromium/magnesium oxide/half metallic Heusler alloy.
摘要翻译：要解决的问题：提供一种控制输出电流相对磁化角度的自旋晶体管，并通过向栅极层施加电压来控制输出电流，并提供一种磁存储器，其中自旋晶体管集成了诸如非易失性逻辑电路的磁性装置。解决方案：源极层14，栅极层13和漏极层15由半金属Heusler合金制成。介于源极层14和栅极层13之间的第一绝缘层16和介于栅极层13和漏极层15之间的第二绝缘层17由氧化镁（MgO）制成。包括栅极层13并通过电容将栅极电压施加到栅极层13的栅极结构由铬/氧化镁/半金属Heusler合金制成。版权所有（C）2012，JPO＆INPIT

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