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1. 发明专利

JP2006184141A Probe for scanning magnetic force microscopes, its manufacturing method, and ferromagnetic alloy coating method for carbon nanotubes 有权
标题翻译：扫描磁力显微镜的探针及其制备方法和碳纳米管的氟化合金涂层方法
公开(公告)号：JP2006184141A
公开(公告)日：2006-07-13
申请号：JP2004378606
申请日：2004-12-28
申请人： National Institute Of Advanced Industrial & Technology , Sii Nanotechnology Inc , エスアイアイ・ナノテクノロジー株式会社 , 独立行政法人産業技術総合研究所
发明人： AKINAGA HIROYUKI , SENBA YASUYUKI , YOKOYAMA HIROSHI , YASUTAKE MASATOSHI , KURAMOCHI HIROMI
IPC分类号： C01B31/02 , G01Q60/54 , G01Q60/56 , G01Q70/12
CPC分类号： G01Q60/56 , G01Q70/12 , Y10S977/84 , Y10S977/842 , Y10T428/30
摘要： PROBLEM TO BE SOLVED: To provide a probe for scanning magnetic force microscopes and its manufacturing method, having observable resolution for the magnetic recording medium with a memory density of 1,200 kFCI or larger, together with a ferromagnetic alloy coating method for carbon nanotubes. SOLUTION: A manufacturing method is presented of both the probe for scanning magnetic force microscopes, where at least carbon nanotube is included, at least a part of the surface of which is coated by ferromagnetic alloy layer consisting of either sort of Co-Fe alloy or Co-Ni alloy; while the arithmetic mean surface roughness (Ra of 10 μm) of the ferromagnetic alloy layer concerned is regulated to be 1.15 nm or less, and the probe for scanning magnetic force microscopes attaining the average surface roughness concerned, by controlling the growth rate of the ferromagnetic body alloy layer to be within the range of 1.0 to 2.5 nm/min, together with manufacturing method of ferromagnetic alloy coating method for carbon nanotubes. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种用于扫描磁力显微镜的探针及其制造方法，其具有对具有1,200kFCI或更大的存储密度的磁记录介质的可观察分辨率，以及用于碳纳米管的铁磁合金涂覆方法。解决方案：提供了用于扫描磁力显微镜的探针的制造方法，其中至少包括碳纳米管，其表面的至少一部分由铁磁合金层涂覆，所述铁磁合金层由任一种Co- Fe合金或Co-Ni合金; 而相关的铁磁性合金层的算术平均表面粗糙度（Ra为10μm）被调节到1.15nm以下，通过控制铁磁体的生长速度，扫描磁力显微镜的探针达到了平均表面粗糙度体合金层在1.0〜2.5nm / min的范围内，以及用于碳纳米管的铁磁合金涂层方法的制造方法。版权所有（C）2006，JPO＆NCIPI

2. 发明专利

JP2010014728A Probe for scanning type magnetic force microscope, method of manufacturing the same and method of forming ferromagnetic alloy film for carbon nano-tube 审中-公开
标题翻译：扫描型磁力显微镜的研究方法及其制造方法及形成碳纳米管的氟碳合金薄膜的方法
公开(公告)号：JP2010014728A
公开(公告)日：2010-01-21
申请号：JP2009223588
申请日：2009-09-29
申请人： National Institute Of Advanced Industrial & Technology , Sii Nanotechnology Inc , エスアイアイ・ナノテクノロジー株式会社 , 独立行政法人産業技術総合研究所
发明人： AKINAGA HIROYUKI , SENBA YASUYUKI , YOKOYAMA HIROSHI , YASUTAKE MASATOSHI , KURAMOCHI HIROMI
IPC分类号： G01Q60/56 , G01Q60/54 , G01Q70/12
摘要： PROBLEM TO BE SOLVED: To provide a probe for a scanning type magnetic force microscope having resolution enabling to observe a magnetic recording medium having recording density of ≥1,200 kFCI, to provide a method of manufacturing the same, and to provide a method of forming a ferromagnetic alloy film for carbon nano-tube.
SOLUTION: The probe for the scanning type magnetic force microscope includes at least a carbon nano-tube in which at least part of surface is covered with a ferromagnetic alloy metal layer consisting of one of a Co-Fe-based alloy and a Co-Ni-based alloy, wherein an arithmetic mean surface roughness (Ra 10 μm) of the ferromagnetic alloy layer is restricted at ≤1.15 nm. The method of manufacturing the probe for the scanning type magnetic force microscope achieves the above mean surface roughness by controlling the growth speed of the ferromagnetic alloy layer at within of 1.0-2.5 nm/min. The method of forming the ferromagnetic alloy film for the carbon nano-tube is also provided.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：为了提供具有能够观察具有≥1,200kFCI的记录密度的磁记录介质的分辨率的扫描型磁力显微镜的探针，以提供其制造方法，并提供一种方法形成碳纳米管的铁磁合金膜。解决方案：用于扫描型磁力显微镜的探针至少包括碳纳米管，其中表面的至少一部分被由铁Fe合金金属层覆盖，所述铁磁合金金属层由Co-Fe基合金和 Co-Ni基合金，其中铁磁性合金层的算术平均表面粗糙度（Ra 10μm）被限制在≤1.15nm。通过将铁磁性合金层的生长速度控制在1.0〜2.5nm / min以内，扫描型磁力显微镜用探针的制造方法达到上述平均表面粗糙度。还提供了形成用于碳纳米管的铁磁性合金膜的方法。版权所有（C）2010，JPO＆INPIT

3. 发明专利

JP2015032737A 抵抗変化素子有权
标题翻译：电阻变化元件
公开(公告)号：JP2015032737A
公开(公告)日：2015-02-16
申请号：JP2013162399
申请日：2013-08-05
申请人：マイクロンメモリジャパン株式会社 , Micron Technology Japan Inc , 独立行政法人産業技術総合研究所 , National Institute Of Advanced Industrial & Technology , シャープ株式会社 , Sharp Corp
发明人： TANIOKU MASAMI , AKINAGA HIROYUKI , SHIMA HISASHI , AWAYA NOBUYOSHI , TAMAI YUKIO
IPC分类号： H01L27/105 , C23C14/08 , H01L21/316 , H01L45/00 , H01L49/00
摘要：【課題】抵抗層の比抵抗値を低くしバラツキを抑えることができる抵抗変化素子及び半導体記憶装置を提供すること。【解決手段】第1電極及び第2電極と、前記第1電極と前記第2電極との間に配されるとともに、酸素及び金属を含む抵抗変化層と、前記抵抗変化層と前記第2電極との間に配されるとともに、前記抵抗変化層及び前記第2電極にそれぞれ接合する抵抗層と、を備え、前記抵抗層は、ハフニウム、アルミニウム及び酸素から構成され、その原子組成百分率がアルミニウムの15atom%以上かつ30atom%以下に対して酸素が20atom%以上かつ35atom%以下であり、ハフニウムが35atom%以上かつ65atom%以下である。【選択図】図1
摘要翻译：要解决的问题：提供能够降低电阻层的电阻值并抑制变化的电阻变化元件，并提供半导体存储器件。解决方案：电阻变化元件包括：第一电极和第二电极; 电阻变化层，其布置在第一和第二电极之间并且包含氧和金属; 以及电阻层，其布置在所述电阻变化层和所述第二电极之间并且接合到所述电阻变化层和所述第二电极。电阻层由铪，铝和氧组成。相对于铝的原子组成百分比，15原子的氧的原子组成百分比为20原子％以上且35原子％以下，铪的原子组成百分比为35原子％以上且65原子％以下以上且30原子以下。

4. 发明专利

JP2009135461A Rectifier and its production method 有权
标题翻译：整流器及其生产方法
公开(公告)号：JP2009135461A
公开(公告)日：2009-06-18
申请号：JP2008275222
申请日：2008-10-27
申请人： National Institute Of Advanced Industrial & Technology , 独立行政法人産業技術総合研究所
发明人： SHIMA HISASHI , AKINAGA HIROYUKI , ISHIBASHI SHOJI , TAMURA TOMOYUKI
IPC分类号： H01L29/66 , H01L29/47 , H01L29/861 , H01L29/872
CPC分类号： H01L29/872 , H01L29/24
摘要： PROBLEM TO BE SOLVED: To provide a diode for rectification capable of arbitrarily controlling rectifying characteristics by supplying electric signals even after a rectifier is produced.
SOLUTION: This invention provides the rectifier and its production method. A titanium oxide layer, where only the interface on a side facing any one of electrodes has a fixed ratio composition and the average composition of the whole layer is represented by the formula of TiO
x , is interposed between first and second electrodes formed of a transition metal having an electronegativity larger than Ti. The rectifying characteristics are reversed by applying a reversing electric signal exceeding a critical reversing electric power between the first and second electrodes in an opposite direction. In the formula, x satisfies a relationship of 1.6≤x
摘要翻译：要解决的问题：即使在整流器产生之后，通过提供电信号来提供能够任意控制整流特性的整流二极管。解决方案：本发明提供整流器及其制造方法。氧化钛层，其中只有面对任何一个电极的一侧上的界面具有固定的比例组成，并且整个层的平均组成由下式表示：＆lt; SB＆gt; x＆lt; SB＆gt; 以及由具有大于Ti的电负性的过渡金属形成的第二电极。通过在相反方向上施加超过第一和第二电极之间的临界反向电功率的反向电信号来反转整流特性。在该公式中，x满足1.6≤x<2的关系。版权所有（C）2009，JPO＆INPIT

5. 发明专利

JP2008306157A Variable resistive element and method for manufacturing the same, and nonvolatile semiconductor storage device 有权
标题翻译：可变电阻元件及其制造方法以及非易失性半导体存储器件
公开(公告)号：JP2008306157A
公开(公告)日：2008-12-18
申请号：JP2007292763
申请日：2007-11-12
申请人： National Institute Of Advanced Industrial & Technology , Sharp Corp , シャープ株式会社 , 独立行政法人産業技術総合研究所
发明人： TAMAI YUKIO , HOSOI YASUNARI , AWAYA NOBUYOSHI , ONISHI SHIGEO , ISHIHARA KAZUYA , SHIMA HISASHI , TAKANO FUMIYOSHI , AKINAGA HIROYUKI
IPC分类号： H01L27/10 , H01L45/00 , H01L49/00
CPC分类号： G11C13/0011 , G11C11/5614 , G11C11/5685 , G11C13/0007 , G11C13/0069 , G11C2013/0073 , G11C2013/0083 , G11C2013/009 , G11C2213/32 , G11C2213/34 , G11C2213/51 , G11C2213/56 , G11C2213/77 , H01L27/101 , H01L45/08 , H01L45/1233 , H01L45/146
摘要： PROBLEM TO BE SOLVED: To provide a variable resistive element which performs high speed and low power consumption operation. SOLUTION: In the variable resistive element, a metal oxide layer 10 is provided between a first electrode 11 and a second electrode 12, and electrical resistance between the first and the second electrodes reversibly varies in accordance with application of electrical stress to between the first and the second electrodes. The metal oxide layer 10 has a filament 13 which is a current path wherein the density of a current flowing between the first and the second electrodes locally increases. A portion including at least the vicinity of an interface, which is between at least the one specified electrode 11 between the first electrode and the second electrode and the filament 13, on an interface between the specified electrode 11 and the metal oxide layer 10 is provided with an interface oxide 15 which is an oxide of at least one element included in the specified electrode 11 and different from the oxide of the metal oxide layer 10. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种执行高速和低功耗操作的可变电阻元件。解决方案：在可变电阻元件中，金属氧化物层10设置在第一电极11和第二电极12之间，并且第一和第二电极之间的电阻根据电应力的应用而可逆地变化，第一和第二电极。金属氧化物层10具有灯丝13，其是电流路径，其中在第一和第二电极之间流动的电流的密度局部增加。在规定的电极11和金属氧化物层10之间的界面上，至少包括位于第一电极和第二电极之间的至少一个规定电极11与灯丝13之间的界面附近的部分具有界面氧化物15，其是包括在指定电极11中并且不同于金属氧化物层10的氧化物的至少一种元素的氧化物。版权所有（C）2009，JPO＆INPIT

6. 发明专利

JP2004253095A Erasable or rewritable recording medium, and erasable or rewritable recording method to the same 有权
公开(公告)号：JP2004253095A
公开(公告)日：2004-09-09
申请号：JP2003044876
申请日：2003-02-21
申请人： National Institute Of Advanced Industrial & Technology , Seiko Instruments Inc , セイコーインスツルメンツ株式会社 , 独立行政法人産業技術総合研究所
发明人： TOKISAKI TAKASHI , AKINAGA HIROYUKI , YOKOYAMA HIROSHI , MASAGO TAKUJI , KURAMOCHI HIROMI , YASUTAKE MASATOSHI
IPC分类号： G11B5/65 , G11B9/14 , G11B11/26
摘要： PROBLEM TO BE SOLVED: To provide a recording method by which recording is performed to a recording medium with a super-high density so as to be erasable or rewritable and a recording medium therefor.
SOLUTION: Regions being the states of a plurality of kinds of the oxidation number are formed mutually identifiably by optical or magnetic characteristic difference by controlling the number of oxidation on a substrate surface using a minute electrode to which a plurality of kinds of bias voltages can be applied.
COPYRIGHT: (C)2004,JPO&NCIPI

7. 发明专利

JP2004045383A Multiplex ultimate probing system 有权
公开(公告)号：JP2004045383A
公开(公告)日：2004-02-12
申请号：JP2003129685
申请日：2003-05-08
申请人： Aruaaramu:Kk , Electro Lab Co , National Institute Of Advanced Industrial & Technology , Nippon Automatic Control Co , Thermal Block:Kk , 日本オートマティック・コントロール株式会社 , 有限会社アルアーラム , 有限会社エレクトロラボ , 有限会社サーマルブロック , 独立行政法人産業技術総合研究所
发明人： AKINAGA HIROYUKI , HENMI TOMOKAZU , KOYAMA TOMOYASU , HORINOUCHI HIDEARI , YAMAUCHI MUTSUKO
IPC分类号： G01R1/06 , H01L39/04
摘要： PROBLEM TO BE SOLVED: To provide a measuring apparatus which improves the operability of a probe or the like and which can cover most of a magnetic field range and a temperature range necessary in a practical use through a proposal of the type for cooling a superconducting magnet to a critical temperature or lower not depending upon a constitution for dipping the magnet in a liquid helium. SOLUTION: This multiplex ultimate proving system measures a physical amount of a predetermined point on a matter to be measured placed on a matter-to-be measured fixing means disposed in a magnetic field and cooled by a probe introduced from above the matter to be treated. The superconducting magnet for generating the magnetic field is coupled to and placed on a high solid heat conductive cooling unit to cool the entire magnet to a critical temperature or lower. COPYRIGHT: (C)2004,JPO

8. 发明专利

JP2013084850A Semiconductor device and manufacturing method of the same 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：JP2013084850A
公开(公告)日：2013-05-09
申请号：JP2011225006
申请日：2011-10-12
申请人： Elpida Memory Inc , エルピーダメモリ株式会社 , National Institute Of Advanced Industrial & Technology , 独立行政法人産業技術総合研究所
发明人： KAKEGAWA TOMOYASU , AKINAGA HIROYUKI , SHIMA HISASHI
IPC分类号： H01L27/105 , H01L45/00 , H01L49/00
CPC分类号： H01L45/04 , H01L27/2436 , H01L27/2472 , H01L45/1233 , H01L45/124 , H01L45/146 , H01L45/16
摘要： PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device which inhibits the reduction of an effective area of a storage element.SOLUTION: A manufacturing method of a semiconductor device includes the steps of: forming a first conductive plug on a substrate; forming a variable resistance film covering an upper surface of the first conductive plug on the substrate; forming a first insulation film covering the upper surface of the first conductive plug on the substrate; partially removing the first insulation film at a position located on the first conductive plug to form a hole part at the first insulation film; forming a first conductive film over an area ranging an upper surface of the first insulation film to the hole part so that the first conductive film buries the hole part thereby contacting with the variable resistance film in the hole part and electrically connecting with the first conductive plug through the variable resistance film.
摘要翻译：解决的问题：提供抑制存储元件的有效面积减小的半导体器件的制造方法。解决方案：半导体器件的制造方法包括以下步骤：在衬底上形成第一导电插塞; 形成覆盖所述基板上的所述第一导电插塞的上表面的可变电阻膜; 形成覆盖所述基板上的所述第一导电插塞的上表面的第一绝缘膜; 在位于所述第一导电插塞上的位置处部分地移除所述第一绝缘膜，以在所述第一绝缘膜处形成孔部; 在第一绝缘膜的上表面到孔部分的区域上形成第一导电膜，使得第一导电膜掩埋孔部分，从而与孔部分中的可变电阻膜接触并与第一导电插塞通过可变电阻膜。版权所有（C）2013，JPO＆INPIT

9. 发明专利

JP2008034434A Switching element, and manufacturing method thereof 有权
标题翻译：开关元件及其制造方法
公开(公告)号：JP2008034434A
公开(公告)日：2008-02-14
申请号：JP2006203025
申请日：2006-07-26
申请人： National Institute Of Advanced Industrial & Technology , Sharp Corp , シャープ株式会社 , 独立行政法人産業技術総合研究所
发明人： SHIMA HISASHI , AKINAGA HIROYUKI , TAKANO FUMIYOSHI , TAMAI YUKIO
IPC分类号： H01L49/02 , H01L27/10
CPC分类号： H01L45/04 , H01L45/1233 , H01L45/146 , H01L45/1625 , H01L45/1641 , H01L45/1675
摘要： PROBLEM TO BE SOLVED: To provide a switching element having a read margin suitable for the data storage section of a non-volatile memory by improving a resistance ratio in a metal oxide thin film having reversible variable resistance characteristics. SOLUTION: In the switching element, a metal oxide made of a transition metal and oxygen is formed between first and second electrodes. The metal oxide is made from a stoichiometric compound of the transition metal and oxygen by changing one or more of a crystal structure, the valence of a metal element ion, and a nonstoichiometric property. A method of manufacturing the switching element includes a process for performing heat treatment within a temperature range of 400-800°C and/or exposure treatment to oxygen plasma to a metal oxide thin film that is formed between the first and second electrodes, and is made of a single center metal element including a fluctuation in composition. By using the method, the switching element is manufactured which has the reversible variable resistance characteristics by the application history of power. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：解决的问题：提供具有适合于非易失性存储器的数据存储部分的读取余量的开关元件，通过提高具有可逆电阻特性的金属氧化物薄膜的电阻比。解决方案：在开关元件中，在第一和第二电极之间形成由过渡金属和氧气制成的金属氧化物。通过改变晶体结构，金属元素离子的价数和非化学计量特性中的一种或多种，金属氧化物由过渡金属和氧的化学计量的化合物制成。制造开关元件的方法包括在400-800℃的温度范围内进行热处理和/或对氧等离子体进行曝光处理至形成在第一和第二电极之间的金属氧化物薄膜的方法，并且是由包含组成波动的单个中心金属元件制成。通过使用该方法，通过功率的应用历史来制造具有可逆可变电阻特性的开关元件。版权所有（C）2008，JPO＆INPIT

10. 发明专利

JP2005268349A Reactive ion etching method and apparatus thereof 审中-公开
标题翻译：反应离子蚀刻方法及其设备
公开(公告)号：JP2005268349A
公开(公告)日：2005-09-29
申请号：JP2004075506
申请日：2004-03-17
申请人： National Institute Of Advanced Industrial & Technology , Osaka Industrial Promotion Organization , Samco Inc , サムコ株式会社 , 独立行政法人産業技術総合研究所 , 財団法人大阪産業振興機構
发明人： AKINAGA HIROYUKI , KASAI HIDEAKI , NAKANISHI HIROSHI , DINO WILSON AGERICO TAN , MOTOYAMA SHINICHI
IPC分类号： C23F4/00 , H01L21/3065 , H01L21/8246 , H01L27/105 , H01L43/08 , H01L43/10 , H01L43/12
摘要： PROBLEM TO BE SOLVED: To provide a method of dry-etching a magnetic substance containing an etching resistive element such as Pt and Ir without depending on a physical etching method.
SOLUTION: The method subjects to reactive ion etching on a metal thin film comprising any one kind of metal selected from a group of Fe, Co, Ni, Pt, and Ir, alloy containing one kind, or two kinds or more of elements selected from the group, or an intermetallic compound or a superlattice material containing two kinds or more of elements selected from the group using material gas involving at least methane and oxygen and making the material gas plasma. A manufacturing method of a magnetic random memory employs the method.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种在不依赖于物理蚀刻方法的情况下对包含诸如Pt和Ir的蚀刻电阻元件的磁性物质进行干蚀刻的方法。解决方案：该方法对包含选自Fe，Co，Ni，Pt和Ir中的任一种金属的金属薄膜进行反应离子蚀刻，含有一种或两种以上的合金选自该组的元素，或含有选自使用至少包括甲烷和氧气的材料气体并使材料气体等离子体选择的两种或更多种元素的金属间化合物或超晶格材料。磁性随机存储器的制造方法采用该方法。版权所有（C）2005，JPO＆NCIPI

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