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1. 发明专利

JP2008034434A Switching element, and manufacturing method thereof 有权
标题翻译：开关元件及其制造方法
公开(公告)号：JP2008034434A
公开(公告)日：2008-02-14
申请号：JP2006203025
申请日：2006-07-26
申请人： National Institute Of Advanced Industrial & Technology , Sharp Corp , シャープ株式会社 , 独立行政法人産業技術総合研究所
发明人： SHIMA HISASHI , AKINAGA HIROYUKI , TAKANO FUMIYOSHI , TAMAI YUKIO
IPC分类号： H01L49/02 , H01L27/10
CPC分类号： H01L45/04 , H01L45/1233 , H01L45/146 , H01L45/1625 , H01L45/1641 , H01L45/1675
摘要： PROBLEM TO BE SOLVED: To provide a switching element having a read margin suitable for the data storage section of a non-volatile memory by improving a resistance ratio in a metal oxide thin film having reversible variable resistance characteristics. SOLUTION: In the switching element, a metal oxide made of a transition metal and oxygen is formed between first and second electrodes. The metal oxide is made from a stoichiometric compound of the transition metal and oxygen by changing one or more of a crystal structure, the valence of a metal element ion, and a nonstoichiometric property. A method of manufacturing the switching element includes a process for performing heat treatment within a temperature range of 400-800°C and/or exposure treatment to oxygen plasma to a metal oxide thin film that is formed between the first and second electrodes, and is made of a single center metal element including a fluctuation in composition. By using the method, the switching element is manufactured which has the reversible variable resistance characteristics by the application history of power. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：解决的问题：提供具有适合于非易失性存储器的数据存储部分的读取余量的开关元件，通过提高具有可逆电阻特性的金属氧化物薄膜的电阻比。解决方案：在开关元件中，在第一和第二电极之间形成由过渡金属和氧气制成的金属氧化物。通过改变晶体结构，金属元素离子的价数和非化学计量特性中的一种或多种，金属氧化物由过渡金属和氧的化学计量的化合物制成。制造开关元件的方法包括在400-800℃的温度范围内进行热处理和/或对氧等离子体进行曝光处理至形成在第一和第二电极之间的金属氧化物薄膜的方法，并且是由包含组成波动的单个中心金属元件制成。通过使用该方法，通过功率的应用历史来制造具有可逆可变电阻特性的开关元件。版权所有（C）2008，JPO＆INPIT

2. 发明专利

JP2015032737A 抵抗変化素子有权
标题翻译：电阻变化元件
公开(公告)号：JP2015032737A
公开(公告)日：2015-02-16
申请号：JP2013162399
申请日：2013-08-05
申请人：マイクロンメモリジャパン株式会社 , Micron Technology Japan Inc , 独立行政法人産業技術総合研究所 , National Institute Of Advanced Industrial & Technology , シャープ株式会社 , Sharp Corp
发明人： TANIOKU MASAMI , AKINAGA HIROYUKI , SHIMA HISASHI , AWAYA NOBUYOSHI , TAMAI YUKIO
IPC分类号： H01L27/105 , C23C14/08 , H01L21/316 , H01L45/00 , H01L49/00
摘要：【課題】抵抗層の比抵抗値を低くしバラツキを抑えることができる抵抗変化素子及び半導体記憶装置を提供すること。【解決手段】第1電極及び第2電極と、前記第1電極と前記第2電極との間に配されるとともに、酸素及び金属を含む抵抗変化層と、前記抵抗変化層と前記第2電極との間に配されるとともに、前記抵抗変化層及び前記第2電極にそれぞれ接合する抵抗層と、を備え、前記抵抗層は、ハフニウム、アルミニウム及び酸素から構成され、その原子組成百分率がアルミニウムの15atom%以上かつ30atom%以下に対して酸素が20atom%以上かつ35atom%以下であり、ハフニウムが35atom%以上かつ65atom%以下である。【選択図】図1
摘要翻译：要解决的问题：提供能够降低电阻层的电阻值并抑制变化的电阻变化元件，并提供半导体存储器件。解决方案：电阻变化元件包括：第一电极和第二电极; 电阻变化层，其布置在第一和第二电极之间并且包含氧和金属; 以及电阻层，其布置在所述电阻变化层和所述第二电极之间并且接合到所述电阻变化层和所述第二电极。电阻层由铪，铝和氧组成。相对于铝的原子组成百分比，15原子的氧的原子组成百分比为20原子％以上且35原子％以下，铪的原子组成百分比为35原子％以上且65原子％以下以上且30原子以下。

3. 发明专利

JP2009141225A Variable resistive element, method for manufacturing variable resistive element, nonvolatile semiconductor storage device 审中-公开
标题翻译：可变电阻元件，制造可变电阻元件的方法，非易失性半导体存储器件
公开(公告)号：JP2009141225A
公开(公告)日：2009-06-25
申请号：JP2007317733
申请日：2007-12-07
申请人： National Institute Of Advanced Industrial & Technology , Sharp Corp , シャープ株式会社 , 独立行政法人産業技術総合研究所
发明人： TAMAI YUKIO , HOSOI YASUNARI , AWAYA NOBUYOSHI , ONISHI SHIGEO , ISHIHARA KAZUYA , SHIMA HISASHI , TAKANO FUMIYOSHI , AKINAGA HIROYUKI
IPC分类号： H01L27/10 , G11C13/00 , H01L45/00 , H01L49/00
CPC分类号： G11C8/08 , G11C13/0007 , G11C13/0028 , G11C2013/0083 , G11C2213/32 , G11C2213/56 , G11C2213/77 , H01C7/108 , H01L45/04 , H01L45/1233 , H01L45/1246 , H01L45/146 , H01L45/1658 , Y10T29/49082
摘要： PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor storage device using a variable resistive element which lowers a forming voltage for forming a conduction portion within a metal oxide without increasing a leak current. SOLUTION: A variable resistive element 1 includes: an electrode 11, an electrode 12, and a metal oxide 10 interposed between the electrode 11 and the electrode 12, wherein the electrical resistance between the electrode 11 and the electrode 12 varies according to an applied voltage to the electrode 11 and the electrode 12, and a low resistance object 14, the electrical resistance of which is lower than that of the metal oxide 10, and isolated from at least one of the electrode 11 and the electrode 12, is provided in the metal oxide 10. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种使用可变电阻元件的非易失性半导体存储装置，其可降低用于在金属氧化物内形成导电部分的形成电压，而不增加泄漏电流。解决方案：可变电阻元件1包括：电极11，电极12和介于电极11和电极12之间的金属氧化物10，其中电极11和电极12之间的电阻根据对电极11和电极12施加的电压以及电阻低于金属氧化物10并与电极11和电极12中的至少一个隔离的低电阻对象14是提供在金属氧化物10中。版权所有（C）2009，JPO＆INPIT

4. 发明专利

JP2008306157A Variable resistive element and method for manufacturing the same, and nonvolatile semiconductor storage device 有权
标题翻译：可变电阻元件及其制造方法以及非易失性半导体存储器件
公开(公告)号：JP2008306157A
公开(公告)日：2008-12-18
申请号：JP2007292763
申请日：2007-11-12
申请人： National Institute Of Advanced Industrial & Technology , Sharp Corp , シャープ株式会社 , 独立行政法人産業技術総合研究所
发明人： TAMAI YUKIO , HOSOI YASUNARI , AWAYA NOBUYOSHI , ONISHI SHIGEO , ISHIHARA KAZUYA , SHIMA HISASHI , TAKANO FUMIYOSHI , AKINAGA HIROYUKI
IPC分类号： H01L27/10 , H01L45/00 , H01L49/00
CPC分类号： G11C13/0011 , G11C11/5614 , G11C11/5685 , G11C13/0007 , G11C13/0069 , G11C2013/0073 , G11C2013/0083 , G11C2013/009 , G11C2213/32 , G11C2213/34 , G11C2213/51 , G11C2213/56 , G11C2213/77 , H01L27/101 , H01L45/08 , H01L45/1233 , H01L45/146
摘要： PROBLEM TO BE SOLVED: To provide a variable resistive element which performs high speed and low power consumption operation. SOLUTION: In the variable resistive element, a metal oxide layer 10 is provided between a first electrode 11 and a second electrode 12, and electrical resistance between the first and the second electrodes reversibly varies in accordance with application of electrical stress to between the first and the second electrodes. The metal oxide layer 10 has a filament 13 which is a current path wherein the density of a current flowing between the first and the second electrodes locally increases. A portion including at least the vicinity of an interface, which is between at least the one specified electrode 11 between the first electrode and the second electrode and the filament 13, on an interface between the specified electrode 11 and the metal oxide layer 10 is provided with an interface oxide 15 which is an oxide of at least one element included in the specified electrode 11 and different from the oxide of the metal oxide layer 10. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种执行高速和低功耗操作的可变电阻元件。解决方案：在可变电阻元件中，金属氧化物层10设置在第一电极11和第二电极12之间，并且第一和第二电极之间的电阻根据电应力的应用而可逆地变化，第一和第二电极。金属氧化物层10具有灯丝13，其是电流路径，其中在第一和第二电极之间流动的电流的密度局部增加。在规定的电极11和金属氧化物层10之间的界面上，至少包括位于第一电极和第二电极之间的至少一个规定电极11与灯丝13之间的界面附近的部分具有界面氧化物15，其是包括在指定电极11中并且不同于金属氧化物层10的氧化物的至少一种元素的氧化物。版权所有（C）2009，JPO＆INPIT

5. 发明专利

JP2013084850A Semiconductor device and manufacturing method of the same 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：JP2013084850A
公开(公告)日：2013-05-09
申请号：JP2011225006
申请日：2011-10-12
申请人： Elpida Memory Inc , エルピーダメモリ株式会社 , National Institute Of Advanced Industrial & Technology , 独立行政法人産業技術総合研究所
发明人： KAKEGAWA TOMOYASU , AKINAGA HIROYUKI , SHIMA HISASHI
IPC分类号： H01L27/105 , H01L45/00 , H01L49/00
CPC分类号： H01L45/04 , H01L27/2436 , H01L27/2472 , H01L45/1233 , H01L45/124 , H01L45/146 , H01L45/16
摘要： PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device which inhibits the reduction of an effective area of a storage element.SOLUTION: A manufacturing method of a semiconductor device includes the steps of: forming a first conductive plug on a substrate; forming a variable resistance film covering an upper surface of the first conductive plug on the substrate; forming a first insulation film covering the upper surface of the first conductive plug on the substrate; partially removing the first insulation film at a position located on the first conductive plug to form a hole part at the first insulation film; forming a first conductive film over an area ranging an upper surface of the first insulation film to the hole part so that the first conductive film buries the hole part thereby contacting with the variable resistance film in the hole part and electrically connecting with the first conductive plug through the variable resistance film.
摘要翻译：解决的问题：提供抑制存储元件的有效面积减小的半导体器件的制造方法。解决方案：半导体器件的制造方法包括以下步骤：在衬底上形成第一导电插塞; 形成覆盖所述基板上的所述第一导电插塞的上表面的可变电阻膜; 形成覆盖所述基板上的所述第一导电插塞的上表面的第一绝缘膜; 在位于所述第一导电插塞上的位置处部分地移除所述第一绝缘膜，以在所述第一绝缘膜处形成孔部; 在第一绝缘膜的上表面到孔部分的区域上形成第一导电膜，使得第一导电膜掩埋孔部分，从而与孔部分中的可变电阻膜接触并与第一导电插塞通过可变电阻膜。版权所有（C）2013，JPO＆INPIT

6. 发明专利

JP2012064775A Field effect transistor and method for manufacturing the same 有权
标题翻译：场效应晶体管及其制造方法
公开(公告)号：JP2012064775A
公开(公告)日：2012-03-29
申请号：JP2010208052
申请日：2010-09-16
申请人： National Institute Of Advanced Industrial & Technology , 独立行政法人産業技術総合研究所
发明人： INOUE AKIRA , SHIMA HISASHI
IPC分类号： H01L29/78 , H01L21/28 , H01L29/417 , H01L29/423 , H01L29/49
摘要： PROBLEM TO BE SOLVED: To provide: a field effect transistor having a gate insulating film allowing a high concentration of carriers of 10cmor more to be implanted into an FET having a channel using a single crystal of a complex oxide only by a field effect, and allowing the ideal interface with the channel in which mobility of the carriers reaches 10 cm/Vs even at room temperature to be obtained; and a method for manufacturing the same.SOLUTION: A field effect transistor comprises: a complex oxide single crystal substrate having a perovskite structure constituting a channel layer; and a gate insulating film including a laminated structure in which a polymer film of paraxylene and tantalum oxide are laminated in this order on the complex oxide single crystal substrate.
摘要翻译：要解决的问题：提供：具有允许高浓度载流子的栅极绝缘膜的场效应晶体管，其具有10 “ -2 或更多，仅通过场效应被注入到具有使用复合氧化物的单晶的沟道的FET中，并且允许与载流子迁移率达到10cm 2 / Vs即使在室温下也可获得; 及其制造方法。解决方案：场效应晶体管包括：具有构成沟道层的钙钛矿结构的复合氧化物单晶衬底; 以及包含层叠结构的栅极绝缘膜，其中对二甲苯和氧化钽的聚合物膜依次层叠在复合氧化物单晶基板上。版权所有（C）2012，JPO＆INPIT

7. 发明专利

JP2009135461A Rectifier and its production method 有权
标题翻译：整流器及其生产方法
公开(公告)号：JP2009135461A
公开(公告)日：2009-06-18
申请号：JP2008275222
申请日：2008-10-27
申请人： National Institute Of Advanced Industrial & Technology , 独立行政法人産業技術総合研究所
发明人： SHIMA HISASHI , AKINAGA HIROYUKI , ISHIBASHI SHOJI , TAMURA TOMOYUKI
IPC分类号： H01L29/66 , H01L29/47 , H01L29/861 , H01L29/872
CPC分类号： H01L29/872 , H01L29/24
摘要： PROBLEM TO BE SOLVED: To provide a diode for rectification capable of arbitrarily controlling rectifying characteristics by supplying electric signals even after a rectifier is produced.
SOLUTION: This invention provides the rectifier and its production method. A titanium oxide layer, where only the interface on a side facing any one of electrodes has a fixed ratio composition and the average composition of the whole layer is represented by the formula of TiO
x , is interposed between first and second electrodes formed of a transition metal having an electronegativity larger than Ti. The rectifying characteristics are reversed by applying a reversing electric signal exceeding a critical reversing electric power between the first and second electrodes in an opposite direction. In the formula, x satisfies a relationship of 1.6≤x
摘要翻译：要解决的问题：即使在整流器产生之后，通过提供电信号来提供能够任意控制整流特性的整流二极管。解决方案：本发明提供整流器及其制造方法。氧化钛层，其中只有面对任何一个电极的一侧上的界面具有固定的比例组成，并且整个层的平均组成由下式表示：＆lt; SB＆gt; x＆lt; SB＆gt; 以及由具有大于Ti的电负性的过渡金属形成的第二电极。通过在相反方向上施加超过第一和第二电极之间的临界反向电功率的反向电信号来反转整流特性。在该公式中，x满足1.6≤x<2的关系。版权所有（C）2009，JPO＆INPIT

8. 发明专利

JP2010103555A Variable resistor element 有权
标题翻译：可变电阻元件
公开(公告)号：JP2010103555A
公开(公告)日：2010-05-06
申请号：JP2009296280
申请日：2009-12-25
申请人： National Institute Of Advanced Industrial Science & Technology , Sharp Corp , シャープ株式会社 , 独立行政法人産業技術総合研究所
发明人： TAMAI YUKIO , HOSOI YASUNARI , AWAYA NOBUYOSHI , ONISHI SHIGEO , ISHIHARA KAZUYA , SHIMA HISASHI , TAKANO FUMIYOSHI , AKINAGA HIROYUKI
IPC分类号： H01L49/00 , H01L27/10 , H01L45/00
摘要： PROBLEM TO BE SOLVED: To reduce a forming voltage applied to form a through-hole in a metal oxide material, without making the leakage current increase. SOLUTION: A variable resistor 1 includes an electrode 11, an electrode 12, and a metal oxide material disposed in between the electrode 11 and electrode 12, and the electrical resistance for the variable resistor 1 between the electrode 11 and the electrode 12 varies reversibly, according to the voltage applied between the electrode 11 and the electrode 12. The metal oxide material includes a resistor 14, which is separated from at least either of the electrode 11 and the electrode 12 and has resistance lower than resistance of the metal oxide material. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：为了降低施加在金属氧化物材料中形成通孔的成形电压，而不会使漏电流增加。解决方案：可变电阻器1包括设置在电极11和电极12之间的电极11，电极12和金属氧化物材料，以及电极11和电极12之间的可变电阻器1的电阻根据施加在电极11和电极12之间的电压可逆地变化。金属氧化物材料包括与电极11和电极12中的至少一个分离的电阻器14，并且具有低于金属电阻的电阻氧化物。版权所有（C）2010，JPO＆INPIT

9. 发明专利

JP2013104102A Film formation method 有权
标题翻译：胶片形成方法
公开(公告)号：JP2013104102A
公开(公告)日：2013-05-30
申请号：JP2011248759
申请日：2011-11-14
申请人： National Institute Of Advanced Industrial Science & Technology , 独立行政法人産業技術総合研究所
发明人： NODA SHUICHI , SHIMA HISASHI , AKINAGA HIROYUKI
IPC分类号： C23C14/34 , H01L31/04
CPC分类号： Y02E10/50
摘要： PROBLEM TO BE SOLVED: To provide a film formation method in which useful CuO film (deposition film) or CuO film composed of a single crystal phase from CuO as a target can be selectively formed and further, on the formation of the CuO film, the film quality control of the CuO film can be easily performed.SOLUTION: CuO is used as a target, charging power for plasmatizing Ar and the total pressure of gas including Ar are set in such a manner that sputtering particles from the CuO are successively changeable into CuO, CuOand CuO in accordance with the increase in the flow rate ratio of O, and then, the flow rate ratio of Ois regulated under the charging power and the total pressure. In this way, either useful CuO film or CuO film composed of a single crystal phase can be adequately formed in a selective way. Further, on the formation of the CuO film, resistivity (carrier density) is regulated in a wide range by the regulation of the Oflow rate ratio, and the change of the film quality properties of the CuO film can be easily performed.
摘要翻译：要解决的问题：提供一种成膜方法，其中由Cu 2 O膜（沉积膜）或CuO膜可以选择性地形成作为目标的POS =“POST”> 2 O，并且在形成Cu 2 O膜时，膜的质量控制可以容易地执行Cu 2 O膜。解决方案：将Cu 2 O用作目标，等离子体化的Ar的充电功率和包括Ar的气体的总压力被设定为使得来自 Cu 2 O可以依次变化为Cu 2 O，Cu 4 根据O 2 的流量比的增加， 3 和CuO，然后，流量比O 2 在充电功率和总压力下进行调节。以这种方式，可以以选择性方式适当地形成由单晶相构成的有用的Cu 2 O膜或CuO膜。此外，在形成Cu 2 O膜时，通过调节O 2，电阻率（载流子密度）在很宽的范围内被调节流量比，并且可以容易地进行Cu 2 O膜的膜质量特性的变化。版权所有（C）2013，JPO＆INPIT

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