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    • 2. 发明专利
    • INPUT/OUTPUT CONTROLLER
    • JPH0470945A
    • 1992-03-05
    • JP17532790
    • 1990-07-04
    • MITSUBISHI ELECTRIC CORP
    • YAMADA MITSURUTERAMOTO AKIYOSHI
    • G06F13/12G06F13/00
    • PURPOSE:To carry out the test of a control part of an input/output controller where many function confirming/adjusting items of software are included in a safe environment free from exposure to the radioactive rays by separating the control part from an input/output part of the input/output controller and connecting both parts to each other via a long distance connectable bus. CONSTITUTION:An output command is transmitted to a control part 7 through a host interface 9d. At the part 7 the contents of the output command are converted into the data of a bus form corresponding to an input/output part 8 and transferred to an optical link function 71 of the part 7. The function 71 converts the received data of a bus form into the optical signals and outputs them to an optical cable 9e. These optical signals transmitted via the cable 9e reach an optical function 81 of the part 8 and are restored again into the data of a bus form from the optical signals. These restored data are outputted to the peripheral devices 2 and 3 from the semiconductor elements corresponding to the devices 2 and 3 of the part 8 via the device interfaces 9a and 9b. Thus the part 7 where many function confirming/adjusting items of software are included is set in an environment free from exposure to the radioactive rays.
    • 4. 发明专利
    • MANUFACTURE OF SEMICONDUCTOR DEVICE
    • JPS62256435A
    • 1987-11-09
    • JP10060486
    • 1986-04-28
    • MITSUBISHI ELECTRIC CORP
    • TADA KENICHIYAMADA MITSURUNIIRU SHIYANKI
    • H01L21/302H01L21/3065
    • PURPOSE:To eliminate the difference in film thickness between a stepped part and a flat part on a semiconductor substrate and prevent the etching remnant from remaining on the stepped part at the time of just etching by forming etching-resistant films with a suitable thickness on the whole surface of the semiconductor substrate except the stepped part. CONSTITUTION:After a polycrystalline silicon film 2 and a molybdenum silicide film 3 are successively formed on a silicon substrate 1, for instance thin photoresist is applied to the flat parts of the silicon substrate 1 to form etching- resistant films 6 which expose the stepped part of the silicon substrate 1 and, after that, a resist pattern 4 is formed on the required part. After the etching- resistant films 6 are removed by anisotropic plasma etching except the part under the resist pattern 4, the molybdenum silicide film 3 on the stepped part of the silicon substrate l only is removed by etching. Then the molybdenum silicide film 3 and the polycrystalline silicon film 2 are etched by RIE. With this constitution, etching which does not leave remnant at the time of just etching of the required pattern can be realized.
    • 5. 发明专利
    • TESTING OF SEMICONDUCTOR WAFER
    • JPS6254932A
    • 1987-03-10
    • JP19641185
    • 1985-09-03
    • MITSUBISHI ELECTRIC CORP
    • YAMADA MITSURU
    • H01L21/66
    • PURPOSE:To improve throughput and productivity by moving down a probe in contact only with a complete chip of a wafer to test it, skipping a defective circuit chip to omit its test, and putting an improper mark to increase the processing capacity. CONSTITUTION:The defective circuit pattern 4 of a photomask 1 obtained by a photomask defect inspecting unit 11 is replaced at a position of a circuit pattern unit with an X-Y coordinates, the information is input to the input unit 14 of a minicomputer 13, replaced by the minicomputer 13 with a chip unit in the X-Y coordinates of a wafer 6 to be tested, recorded in recording means 15 such as a magnetic disk as position information of a defective circuit chip 8, filed and stored. The probe 18 of a wafer testing unit 16 is not moved down to the chip 8, an X-Y table 17 is skipped at the position of the chip 8, an improper mark is put by an improper mark printing needle 19 during the period, the probe 18 is moved down in contact only with a complete chip to be tested.
    • 9. 发明专利
    • Control circuit of reactive power compensator
    • 无功补偿器的控制电路
    • JPS61122726A
    • 1986-06-10
    • JP24343184
    • 1984-11-20
    • Mitsubishi Electric Corp
    • YAMADA MITSURUHOSOKAWA YASUHIKOMORISHIMA NAOKI
    • G05F1/70H02J3/18
    • G05F1/70
    • PURPOSE:To control highly accurately a reactive power compensator by executing the operation of primary delay processing and reset filter processing by an operating means based upon software. CONSTITUTION:The voltage of a power system 1 is detected by a voltage detecting circuit 5 and a signal obtained through a delay circuit 7 having a delay element of which time constant is variable and a signal outputted from the detecting circuit 5 are inputted to a voltage control circuit 9. A thyristor ignition phase control circuit 11 determines the control variable of a thyristor device 3 in accordance with the output of the circuit 9. A current detecting circuit 13 detects the current of the device 3 and determines the time constant of the delay circuit 7. The operation for the primary delay processing of the delay circuit 7 is executed by the operating means based upon the software.
    • 目的:通过执行基于软件的操作手段执行主延迟处理和复位滤波处理的操作,高精度地控制无功功率补偿器。 构成:通过电压检测电路5检测电力系统1的电压,通过具有时间常数的延迟元件的延迟电路7得到的信号是可变的,从检测电路5输出的信号被输入到电压 控制电路9.晶闸管点火相位控制电路11根据电路9的输出确定晶闸管器件3的控制变量。电流检测电路13检测器件3的电流并确定延迟的时间常数 延迟电路7的一次延迟处理的操作由操作装置基于软件执行。