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1. 发明专利

JP2000208495A METHOD AND SYSTEM FOR PLASMA PROCESSING 失效
公开(公告)号：JP2000208495A
公开(公告)日：2000-07-28
申请号：JP936799
申请日：1999-01-18
申请人： MITSUBISHI ELECTRIC CORP , RYODEN SEMICONDUCTOR SYST ENG
发明人： SAWAI HISAHARU , YOSHIFUKU RYOICHI , FURUSE NORIYUKI , NAKAHARA TAKEHIKO , HIRAMATSU KENJI , UMESHITA NAOMI , KATSUTA HIROMOTO , FUJIMOTO SEIJI
IPC分类号： H01L21/302 , C23F4/00 , H01L21/3065 , H05H1/46
摘要： PROBLEM TO BE SOLVED: To stabilize processing in a plasma processing system such that two values of microwave power correspond to one value of RF voltage Vpp. SOLUTION: A correlation curve measuring mechanism 13f is provided in a controller 13d in order to find the correlation curve between a microwave power and an RF voltage Vpp received from an RF voltage detector 13a through the correlation curve measuring mechanism 13f. The correlation curve measuring mechanism 13f determines a set value of microwave power from the correlation curve. The controller 13d controls microwave power of a magnetron, based on the set value.

2. 发明专利

JPH08217596A FORMATION OF DIAMONDLIKE CARBON FILM AND DEVICE THEREFOR 失效
公开(公告)号：JPH08217596A
公开(公告)日：1996-08-27
申请号：JP2195895
申请日：1995-02-09
申请人： MITSUBISHI ELECTRIC CORP
发明人： HIRAMATSU KENJI , OTA TSUTOMU
IPC分类号： C30B25/02 , C23C16/26 , C23C16/27 , C23C16/50 , C30B29/04
摘要： PURPOSE: To obtain a film forming method of a DLC film by which a diamondlike carbon film (DLC film) which is less apt to be removed and has high adhesive force is formed on a base material and a device therefor. CONSTITUTION: In a film forming method by which a DLC film is formed on a base material having a coefficient of linear expansion differing greatly from that of the DLC film, a process 41 for plasma washing the base material until the surface temp. of the base material becomes constant, a process 43 for exchanging washing gas for film forming reaction gas without stopping RF supply, and a process 42 for forming a DLC film on the base material by a plasma CVD method are provided. In these processes 41, 42, 43, the product of a self- bias and a discharge current is fixed. Since the surface temp. of the base material is kept constant, the removal of the film is prevented.

3. 发明专利

JPH06314660A METHOD AND APPARATUS FOR FORMING THIN FILM 失效
公开(公告)号：JPH06314660A
公开(公告)日：1994-11-08
申请号：JP15574093
申请日：1993-06-25
申请人： MITSUBISHI ELECTRIC CORP
发明人： HIRAMATSU KENJI , ONISHI HIROSHI , MORITA NORIKO
IPC分类号： C23C16/50 , C23C16/515 , H01L21/205
摘要： PURPOSE:To form a film having excellent quality at a low temperature and to control film quality and a film thickness distribution by applying a negative DC pulse bias to a substrate, and varying at least one of its pulse width, an amplitude and timing of an RF supply pulse to form the film. CONSTITUTION:Reaction gas to become a material of a thin film is introduced into a reaction furnace 53, an RF voltage is applied between electrodes 54 and 55 installed in the furnace 53 to generate plasma thereby to decompose reaction gas, a chemical reaction is generated on a substrate 62 installed in the furnace 53, and a thin film is deposited on the substrate 62. In this case, a negative DC pulse bias is applied to the substrate 62, at least one of pulse width, amplitude of the pulse bias and timing with an RF supply pulse to form a film. For example, when TiCl4, H2, Ar, N2 are used as reaction gases to form a TiN film, negative pulse bias is applied only during a period in which Ti ion density is high.

4. 发明专利

JP2009026801A Semiconductor light-emitting device and its manufacturing method 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：JP2009026801A
公开(公告)日：2009-02-05
申请号：JP2007185614
申请日：2007-07-17
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： HISA YOSHIHIRO , YAMAGUCHI TSUTOMU , NISHIDA TAKEHIRO , HIRAMATSU KENJI
IPC分类号： H01S5/02 , H01S5/022
CPC分类号： H01S5/4031 , H01S5/0224 , H01S5/02272 , H01S5/0425 , H01S2301/14
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting device capable of preventing polarization of each laser element from being rotated before or after being mounted on a package, and to provide its manufacturing method.
SOLUTION: A plurality of semiconductor laser elements 10a and 10b are formed on the same substrate 11. Further, Au plating 16 is formed on principal surfaces of the plurality of semiconductor laser elements 10a and 10b. Then, the plurality of semiconductor laser elements 10a and 10b are mounted on the package 22 using solder 18 applied onto the Au plating 16. Areas opposed across light emission areas of the semiconductor laser elements 10a and 10b are denoted as first and second areas. Then, an average value of the thickness of the Au plating 16 is made uneven in the first and second areas of the semiconductor laser elements 10a and 10b.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供能够防止每个激光元件的极化在安装在封装之前或之后旋转的半导体发光器件，并提供其制造方法。解决方案：在同一基板11上形成多个半导体激光元件10a和10b。此外，在多个半导体激光元件10a和10b的主表面上形成Au镀层16。然后，使用施加到Au镀层16上的焊料18将多个半导体激光元件10a和10b安装在封装22上。将半导体激光元件10a和10b的发光区域相对的区域表示为第一和第二区域。然后，在半导体激光元件10a和10b的第一和第二区域中使Au镀层16的厚度的平均值变得不均匀。版权所有（C）2009，JPO＆INPIT

5. 发明专利

JPH07238380A WAFER CHUCK, SEMICONDUCTOR PRODUCING DEVICE AND PRODUCTION OF SEMICONDUCTOR 失效
公开(公告)号：JPH07238380A
公开(公告)日：1995-09-12
申请号：JP2777294
申请日：1994-02-25
申请人： MITSUBISHI ELECTRIC CORP
发明人： TAKAHAMA TORU , KANDA TOMOYUKI , ONISHI HIROSHI , KUSAKABE YOSHIHIKO , KINOSHITA YOSHIMI , KITANO KATSUHISA , YOSHIDA KAZUO , TSUTAHARA KOUICHIROU , HIRAMATSU KENJI , YAMANISHI KENICHIRO , NOGUCHI TOSHIHIKO
IPC分类号： C23C16/44 , C23C16/455 , C23C16/458 , C23C16/46 , H01L21/31 , H01L21/68 , H01L21/683
摘要： PURPOSE:To form a thin film on a wafer in a uniform thickness. CONSTITUTION:A recessed part 4 having an outer diameter slightly smaller than that of a wafer 2 is provided on the wafer receptive surface 3 of a susceptor 1 coaxially or practically coaxially with the surface 3. When the wafer is held by the susceptor, the entire periphery of the wafer is brought into contact with the surface 3 in the same width, and the heat is uniformly transmitted from the susceptor to the periphery of the wafer 2. Consequently, a wafer. is uniformly heated, when the susceptor is used in a semiconductor producing device to form a thin film on the wafer surface by the thermochemical reaction with a reactive gas.

6. 发明专利

JP2006156761A Semiconductor laser and manufacturing method thereof 审中-公开
标题翻译：半导体激光器及其制造方法
公开(公告)号：JP2006156761A
公开(公告)日：2006-06-15
申请号：JP2004346068
申请日：2004-11-30
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： TANIMURA JUNJI , KUNITSUGU YASUHIRO , HIRAMATSU KENJI , ABE HAJIME , NAKAMURA HITOSHI
IPC分类号： H01S5/042 , H01S5/22
摘要： PROBLEM TO BE SOLVED: To obtain a ridged semiconductor laser which is manufactured with good reproduction property and stability by minimizing stress fluctuation applied to the periphery of a ridge part, and reducing the fluctuation of a refractive index of an optical wave guide so as to reduce the variation range of the expansion angle of a lateral mode. SOLUTION: In the case of forming a p electrode 11 consisting of a group of metal films containing a Ti film 12, a prescribed amount of oxygen is introduced to a vacuum tank, depositing is carried out by an electronic beam vacuum evaporation method, and oxygen concentration contained in the Ti film 12 contacting with a group of semiconductor layers 9 is set to be 10 to 40 at% after thermal treatment. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：为了通过使施加到脊部周围的应力波动最小化并且减小光波导的折射率的波动来获得制造具有良好再现性和稳定性的脊状半导体激光器以减少横向模式的扩张角的变化范围。解决方案：在形成由含有Ti膜12的一组金属膜组成的电极11的情况下，将规定量的氧气引入真空槽中，通过电子束真空蒸发法进行沉积，并且与热处理后的一组半导体层9接触的Ti膜12中含有的氧浓度设定为10〜40at％。版权所有（C）2006，JPO＆NCIPI

7. 发明专利

JPH10294306A PLASMA ETCHING DEVICE, PLASMA ETCHING METHOD AND PLASMA CLEANING METHOD FOR PLASMA ETCHING DEVICE 失效
公开(公告)号：JPH10294306A
公开(公告)日：1998-11-04
申请号：JP10169797
申请日：1997-04-18
申请人： MITSUBISHI ELECTRIC CORP
发明人： HIRAMATSU KENJI , KOMORI HIDEKI , ONISHI HIROSHI , MATSUMURA TAMIO
IPC分类号： H05H1/46 , C23F4/00 , H01L21/302 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To improve the operation rate and the yield of the device by suppressing the growth of the reaction product, which sticks to the grounding electrode of a microwave etching device for etching a semiconductor element substrate and the like and lengthening the period of the cleaning process. SOLUTION: This device has the following structure. A magnetic-field generating coil 23 is contained in the inside of a grounding electrode 22 arranged around a sample stage 30, on which a material to be processed 34 is mounted, and excited. Thus, the circular magnetic field is formed around the grounding electrode 22. The intrusion of the ions and electrons of the generated reaction product into the surface of the grounding electrode 22 is prevented. The temperature of the grounding electrode 22 is cooled to the lower temperature, and the growing of the reaction product in the vicinity of the grounding electrode is suppressed. Or the part other than the grounding electrode 22 is heated, and the generation of the reaction product is suppressed.

8. 发明专利

JPH08229792A GRINDING DEVICE AND GRINDING METHOD 失效
公开(公告)号：JPH08229792A
公开(公告)日：1996-09-10
申请号：JP3512795
申请日：1995-02-23
申请人： MITSUBISHI ELECTRIC CORP
发明人： SUZUKI HIROFUMI , MAEKAWA SHIGEKI , SAKURAI HIDEKAZU , HIRAMATSU KENJI
IPC分类号： B24B13/00
摘要： PURPOSE: To perform grinding work into a high accurately hollowed aspherical shape in an end face of a small diametric columnar ground workpiece. CONSTITUTION: A device comprises a work spindle 15 of holding a ground workpiece 17 of shaft symmetrical shape rotated with a rotary shaft serving as the center and an adjusting table 21 comprising a tilt base 19 arranged to be opposed to each other to this work spindle 15 to be formed at a prescribed angle relating to the center of the rotary shaft of the work spindle 15 in a direction of coming into contact with and separating from the work spindle 15 and a moving base 20 slid to move along this tilt base. The device has a grinding spindle 22 mounted on the moving base 20 of this adjusting table 21 to hold a grinding wheel 23 rotated of performing grinding work in an end face of the ground workpiece 17.

9. 发明专利

JP2011228337A Wafer stripping method and wafer stripping device 审中-公开
标题翻译：抛光方法和抛光装置
公开(公告)号：JP2011228337A
公开(公告)日：2011-11-10
申请号：JP2010093971
申请日：2010-04-15
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： OKA TAKAFUMI , HIRAMATSU KENJI
IPC分类号： H01L21/683 , H01L21/304
摘要： PROBLEM TO BE SOLVED: To provide a wafer stripping method and a wafer stripping device capable of reducing time required for stripping a wafer, which is attached to a wafer holding member using an adhesive, from the wafer holding member.SOLUTION: A wafer stripping device 1a comprising a solvent bath 8a containing an organic solvent 7 soaks a wafer 2, which is attached onto a wafer holding substrate 6 using an adhesive 3 dissolved by the organic solvent 7, in the organic solvent 7 and strips the wafer 2 from the wafer holding substrate 6. The wafer stripping device 1a also has a wafer stripping jig 11 which adds the force of the stripping direction to the wafer 2 from the wafer holding substrate 6 in the organic solvent 7.
摘要翻译：要解决的问题：提供一种晶片剥离方法和晶片剥离装置，其能够减少从晶片保持构件剥离附着到晶片保持构件的晶片所需的时间。解决方案：包含含有有机溶剂7的溶剂浴8a的晶片剥离装置1a将使用由有机溶剂7溶解的粘合剂3附着在晶片保持基板6上的晶片2浸渍在有机溶剂7中并且从晶片保持基板6剥离晶片2.晶片剥离装置1a还具有晶片剥离夹具11，其在有机溶剂7中从晶片保持基板6向晶片2添加剥离方向的力。
版权所有（C）2012，JPO＆INPIT

10. 发明专利

JP2008181958A Semiconductor light-emitting element 有权
标题翻译：半导体发光元件
公开(公告)号：JP2008181958A
公开(公告)日：2008-08-07
申请号：JP2007012717
申请日：2007-01-23
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： KITAGAKI SHUNICHI , FUKUDA KEIICHI , NAKAMURA SATOSHI , OKAMURA MASAMITSU , HIRAMATSU KENJI , KATAYAMA MASATOSHI , YAMANAKA SHIGEO , YANO NORIYUKI , YAMASHITA JUNICHIRO , NANBARA SEIJI , HASEGAWA KAZUYOSHI , TAKAGI SHINICHI , ISHIMURA EITARO
IPC分类号： H01L33/38
摘要： PROBLEM TO BE SOLVED: To obtain a semiconductor light-emitting element in which a light-emitting end surface is not deteriorated even in a high humidity environment and long term reliability can be ensured. SOLUTION: The semiconductor light-emitting element is provided with a substrate, a first electrode provided on the lower surface of the substrate, a semiconductor layer laminated on the substrate and having a side surface forming a light-emitting end surface, a second electrode provided on the center of the uppermost surface of the semiconductor layer, and a third electrode provided on one part of the uppermost surface of the semiconductor layer and having a potential value between the potential of the second electrode and the potential of first electrode or same as the potential of the first electrode. Thus, a semiconductor light-emitting element in which the light-emitting end surface is not deteriorated even if it is operated in high humidity environment and long term reliability can be ensured can be obtained. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：解决的问题为了获得即使在高湿度环境下发光端面也不劣化的半导体发光元件，能够确保长期的可靠性。解决方案：半导体发光元件设置有基板，设置在基板的下表面上的第一电极，层叠在基板上并具有形成发光端面的侧面的半导体层，设置在半导体层的最上表面的中心的第二电极和设置在半导体层的最上表面的一部分上并具有第二电极的电位和第一电极的电位之间的电位的第三电极，与第一电极的电位相同。因此，可以获得即使在高湿度环境下运行发光端面也不会劣化的长期可靠性的半导体发光元件。版权所有（C）2008，JPO＆INPIT

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