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1. 发明专利

JP2003066110A Apparatus and method for testing high frequency module 审中-公开
标题翻译：用于测试高频模块的装置和方法
公开(公告)号：JP2003066110A
公开(公告)日：2003-03-05
申请号：JP2001259645
申请日：2001-08-29
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： NAKAMURA SATOSHI , HASEGAWA KAZUYOSHI , YAMAUCHI YASUHIRO , TOKASHIKI NAOTAKA , OKAMURA MASAMITSU
IPC分类号： G01R1/06 , G01R31/28
摘要： PROBLEM TO BE SOLVED: To provide an apparatus and a method for testing a high frequency module for a stable inspection even if the height of the high frequency module varies.
SOLUTION: The testing apparatus that brings a high frequency probe into contact with the surface of the high frequency module for testing comprises a test stage having the high frequency module where a shield pin and a signal pin are fixed, a base section for placing the high frequency module, and a contact section connected to the shield potential, and a means for adjusting the distance from the upper surface of the base section to the upper surface of the contact section corresponding to the thickness of the high frequency module.
COPYRIGHT: (C)2003,JPO
摘要翻译：要解决的问题：即使高频模块的高度变化，提供用于测试高频模块以进行稳定检查的装置和方法。解决方案：将高频探头与高频模块表面接触以进行测试的测试装置包括具有固定屏蔽引脚和信号引脚的高频模块的测试平台，用于放置高频模块的基座部分频率模块和连接到屏蔽电位的接触部分，以及用于根据高频模块的厚度调整从基部的上表面到接触部分的上表面的距离的装置。

2. 发明专利

JP2008181958A Semiconductor light-emitting element 有权
标题翻译：半导体发光元件
公开(公告)号：JP2008181958A
公开(公告)日：2008-08-07
申请号：JP2007012717
申请日：2007-01-23
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： KITAGAKI SHUNICHI , FUKUDA KEIICHI , NAKAMURA SATOSHI , OKAMURA MASAMITSU , HIRAMATSU KENJI , KATAYAMA MASATOSHI , YAMANAKA SHIGEO , YANO NORIYUKI , YAMASHITA JUNICHIRO , NANBARA SEIJI , HASEGAWA KAZUYOSHI , TAKAGI SHINICHI , ISHIMURA EITARO
IPC分类号： H01L33/38
摘要： PROBLEM TO BE SOLVED: To obtain a semiconductor light-emitting element in which a light-emitting end surface is not deteriorated even in a high humidity environment and long term reliability can be ensured. SOLUTION: The semiconductor light-emitting element is provided with a substrate, a first electrode provided on the lower surface of the substrate, a semiconductor layer laminated on the substrate and having a side surface forming a light-emitting end surface, a second electrode provided on the center of the uppermost surface of the semiconductor layer, and a third electrode provided on one part of the uppermost surface of the semiconductor layer and having a potential value between the potential of the second electrode and the potential of first electrode or same as the potential of the first electrode. Thus, a semiconductor light-emitting element in which the light-emitting end surface is not deteriorated even if it is operated in high humidity environment and long term reliability can be ensured can be obtained. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：解决的问题为了获得即使在高湿度环境下发光端面也不劣化的半导体发光元件，能够确保长期的可靠性。解决方案：半导体发光元件设置有基板，设置在基板的下表面上的第一电极，层叠在基板上并具有形成发光端面的侧面的半导体层，设置在半导体层的最上表面的中心的第二电极和设置在半导体层的最上表面的一部分上并具有第二电极的电位和第一电极的电位之间的电位的第三电极，与第一电极的电位相同。因此，可以获得即使在高湿度环境下运行发光端面也不会劣化的长期可靠性的半导体发光元件。版权所有（C）2008，JPO＆INPIT

3. 发明专利

JP2008205259A Optical module 审中-公开
标题翻译：光学模块
公开(公告)号：JP2008205259A
公开(公告)日：2008-09-04
申请号：JP2007040587
申请日：2007-02-21
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： FUKUDA KEIICHI , KITAGAKI SHUNICHI , NAKAMURA SATOSHI , OKAMURA MASAMITSU , SASAKURA HISAYASU , KATAYAMA MASATOSHI , YAMANAKA SHIGEO , YANO NORIYUKI , YAMASHITA JUNICHIRO , NANBARA SEIJI , HASEGAWA KAZUYOSHI , TAKAGI SHINICHI
IPC分类号： H01S5/022 , G02B6/42 , H01L31/02 , H01S5/06
摘要： PROBLEM TO BE SOLVED: To provide an optical module which achieves a longer service lifetime by protecting an optical element while appropriating humidity in an open package that is not hermetically sealed.
SOLUTION: The optical module is provided with the optical element and a heat-generating body that heats the optical element. The optical element is heated by allowing the heat-generating body to generate heat in a period in which the optical element is not energized. The optical module may be further provided with a first switch part for turning OFF/ON the energization to the heat-generating body with a phase reverse to a phase of the ON/OFF of the energization to the optical element. Another optical module is provided with an optical element and a heat-generating body that heats the optical element. In another optical module, a calorific value of the total sum of a calorific value due to the optical element itself and a calorific value of the heat-generating body is set to exceed a prescribed value with the energization to the optical element in a period in which the optical element is energized.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种通过保护光学元件同时在未密封的开放式封装中适应湿气来实现更长使用寿命的光学模块。解决方案：光学模块设置有光学元件和加热光学元件的发热体。通过允许发热体在光学元件不通电的时段内产生热量来加热光学元件。光模块还可以设置有第一开关部件，用于以与向光学元件通电的ON / OFF的相位相反的相位关闭/接通对发热体的通电。另一个光学模块设置有光学元件和加热光学元件的发热体。在另一个光学模块中，由于光学元件本身的发热量和发热体的发热量的总和的热值被设定为超过规定值，在光学元件的通电期间光学元件被激励。版权所有（C）2008，JPO＆INPIT

4. 发明专利

JPH04359582A SEMICONDUCTOR LASER 失效
公开(公告)号：JPH04359582A
公开(公告)日：1992-12-11
申请号：JP13471791
申请日：1991-06-06
申请人： MITSUBISHI ELECTRIC CORP
发明人： KUBO MASAKAZU , HASEGAWA KAZUYOSHI
IPC分类号： H01S5/00
摘要： PURPOSE:To obtain a semiconductor laser provided with photodiodes, which are respectively capable of performing an independent APC drive, by a method wherein two monitor beams, which are emitted from a two-beam array LD chip, are respectively received by the independent photodiodes for monitor use. CONSTITUTION:A semiconductor laser is characterized by that two monitor beams (a) and (b), which are emitted from the rear end face of a two-beam array LD chip 1, are respectively monitored by independent photodiodes 4a and 4b for monitor use, the diodes respectively can perform an independent APC drive and the output of a laser beam in the direction of the whole end face of the laser can correctly be controlled.

5. 发明专利

JPH02101786A SEMICONDUCTOR LASER DEVICE 失效
公开(公告)号：JPH02101786A
公开(公告)日：1990-04-13
申请号：JP25526788
申请日：1988-10-11
申请人： MITSUBISHI ELECTRIC CORP
发明人： NAGAI SEIICHI , YOSHIDA KAZUTOMI , ISHII MITSUO , HASEGAWA KAZUYOSHI
IPC分类号： H01S5/00
摘要： PURPOSE:To obtain a semiconductor laser device capable of realizing excellent coupling efficiency by a method wherein the irregularity of coupling efficiency with an optical fiber is reduced by providing a cap with a multi-stage projection and a lens. CONSTITUTION:A heat sink 2 is so assembled in a stem 6 that the light emitting point of an LD chip 1 coincides with the center axis of the stem 6. A cap 8 is provided with a lens 3 and a multi-stage projection 9. The cap 8 is fixed in the following manner; the cap is finely moved in X and Y directions while the LD is made to radiate light, a photo detection device arranged so as to face the lens 3 monitors optical axis alignment, and the cap is fixed when the optical axes coincide with each other in X and Y directions. Fusion welding is progressed while the tip part of the multi-stage projection 9 is melted, and repeated step-wise is performed until the optical axis alignment in Z-axis direction is finished. Fine movement of the cap in the course of optical axis alignment is enabled in this manner while the LD light is monitored, so that the coupling efficiency with optical fiber is improved, irregularity is reduced, and mass-productivity is increased.

6. 发明专利

JPS63223165A APPARATUS FOR PRODUCING SEMICONDUCTOR 失效
公开(公告)号：JPS63223165A
公开(公告)日：1988-09-16
申请号：JP5913887
申请日：1987-03-12
申请人： MITSUBISHI ELECTRIC CORP
发明人： KUBOTA MASAYUKI , HASEGAWA KAZUYOSHI
IPC分类号： C23C14/24 , H01L21/203
摘要： PURPOSE:To form a rotating mechanism for a substrate into a simple construction, by providing a mechanism for varying a vapor deposition angle which is constituted of a shape memory alloy into a vacuum chamber and changing the installation angle of the substrate. CONSTITUTION:The mechanism for varying the vapor deposition angle provided in the vacuum chamber 1 is constituted of variable members 11A, 11B consisting of the shape memory alloy and heaters 12A, 12B are respectively wound on the members 11A, 11B. The semiconductor substrate 6 is held at the angle at which a sample base 5 is inclined with respect to a vapor deposition source 8 in the state of deforming the shape memory alloy. The deformed shape memory alloy restores the original state and can change the angle of the base 5 with respect to the source 8 to a prescribed position when the shape memory alloy is heated by the heater 12B. Since heat is radiated from a tungsten boat 7 during the vapor deposition, the influence on the shape memory alloy is prevented by providing a shielding plate 13.

7. 发明专利

JPH11121863A REFLECTOR, OPTICAL SEMICONDUCTOR DEVICE USING THE SAME AND THEIR MANUFACTURE 失效
公开(公告)号：JPH11121863A
公开(公告)日：1999-04-30
申请号：JP28841297
申请日：1997-10-21
申请人： MITSUBISHI ELECTRIC CORP
发明人： ISHII MITSUO , YAMAMOTO AKISUKE , OSHIMA ISAO , TANAKA YOSHIKAZU , HASEGAWA KAZUYOSHI , NAGAI SEIICHI
IPC分类号： H01S5/00 , H01S3/18
摘要： PROBLEM TO BE SOLVED: To improve a light intensity distribution uniformity of a laser beam reflected from a reflective surface, by using a reflector having a polished smooth Si single crystal substrate surface as a reflective surface with an etched bottom surface at specified angle to the substrate surface. SOLUTION: A manufacturing method comprises steps of forming an SiO2 film on a p-type Si substrate 100, forming openings at specified regions, changing them to n-type regions to form photo-detectors 2, fixing an etched bottom face 10 of a preformed reflector 18 to specified area of the Si substrate 100 to form a mirror surface at 45 deg. to the substrate 100 as a reflective surface 17 of the reflector 18, and fixing a light emitting device 4 to specified area on the substrate 100 to complete an optical semiconductor device which is usually mounted on a package 5 having a hologram 6 fixed to the top face.

8. 发明专利

JPH0366191A METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH0366191A
公开(公告)日：1991-03-20
申请号：JP20322389
申请日：1989-08-03
申请人： MITSUBISHI ELECTRIC CORP
发明人： HASEGAWA KAZUYOSHI
IPC分类号： H01S5/00 , H01S5/02
摘要： PURPOSE:To eliminate the need for soldering and scrub work, and then enable simultaneous bonding of them by forming Au layers and Sn layers between a semiconductor chip and a sub-mount and between the sub-mount and a heat sink block so that a specific layer thickness ratio may be available and melting the layers to form an Au-Sn alloy layer. CONSTITUTION:An LD chip 1, a sub-mount 2, and a heat sink block 6 are laminated consecutively on a heat stage 10. Then, they are heated at a temperature of 280 deg.C or above with proper weight being applied to the upper surface of the LD chip 1, which melts and diffuses Au layers 3, and 4, an Sn layer 11, Au layer 7, and 8, and an Sn layer 12 respectively in each junction between the LD chip 1 and the sub-mount 2, and the sub-mount 2 and a heat sink block 6, thereby forming AuSn alloys 13 and 14 so that the LD chip 1 may be interfaced with the sub-mount 2 while the sub-mount 2 may be bonded with the heat sink block 6. Since the Au-Sn alloy layers 13 and 14 have a specific thickness ratio (about 3:2) between the Au layer and Sn layer, the layers 13 and 14 becomes an alloy of 80wt.% Au and 20wt.% Sn.

9. 发明专利

JPH02106989A SEMICONDUCTOR LASER DEVICE 失效
公开(公告)号：JPH02106989A
公开(公告)日：1990-04-19
申请号：JP26188388
申请日：1988-10-17
申请人： MITSUBISHI ELECTRIC CORP
发明人： HASEGAWA KAZUYOSHI
IPC分类号： H01S3/101 , H01S3/23 , H01S5/00 , H01S5/40
摘要： PURPOSE:To control each laser beam independently, and to prevent noises due to return beams by receiving each monitor beam by separate PD for monitor and severally driving APCs. CONSTITUTION:An LD chip 1 is die-bonded with the low surface section 12 of a stepped Si sub-mount 11, and currents are made to flow through a P-N junction vertically in the LD chip 1, thus emitting laser beams A5a, B5b from the front end face 8 of the LD chip 1 while emitting monitor beams A6a, B6b from a rear end face 9. Monitor beams A6a, B6b are not made to intervene mutually by a protrusion section 15 separately, and are received to PDs A14a, B14b for monitor shaped to stepped boundary surfaces 13 respectively. Monitor beams are converted into separate electric signals by each PD A14a, B14b for monitor in laser beams A5a, B5b, and an optical output is controlled by each APC circuit. A stepped boundary surface 13 is provided with a proper inclination to prevent return beam noises by reflected beams from the PDs for monitor to the rear end face 9 of the LD chip 1 at the same time.

10. 发明专利

JPH0298987A SEMICONDUCTOR LASER DEVICE 失效
公开(公告)号：JPH0298987A
公开(公告)日：1990-04-11
申请号：JP25111988
申请日：1988-10-05
申请人： MITSUBISHI ELECTRIC CORP
发明人： HASEGAWA KAZUYOSHI , NAGAI SEIICHI
IPC分类号： H01S5/00
摘要： PURPOSE:To enable fine adjustment of a position in the three directions of X, Y, Z while monitoring optical axis alignment, to reduce variations in coupling efficiency with optical fiber and to improve mass producibility by attaching a plate with a lens to a cap. CONSTITUTION:A heat sink 2 is assembled on a stem 6 so that a light emitting point of an LD chip 1 is subjected to alignment with a center axis of the stem 6. A cap 8 is provided with a plate 10 having a lens through a brazing material 9. Fine adjustment is performed to the cap 8 in the directions of X, Y making an LD emit light, optical axis alignment is monitored by a photodetector which is provided in opposition to a plate 3 equipped with a lens, and the cap 8 is fixed at a position whereon optical axis in the directions of X, Y is aligned. The brazing material 9 between the cap 8 and the plate 10 equipped with a lens is fused through heat up fixing the cap 8 in the directions of X, Y. Optical axis alignment state in the direction of Z axis is monitored, optical axis is aligned, cooling is applied, and the plate 10 with a lens is fixed. Coupling efficiency with optical fiber can be improved in this way.

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