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1. 发明专利

JPH07135319A THIN FILM TRANSISTOR AND ITS FABRICATION 失效
公开(公告)号：JPH07135319A
公开(公告)日：1995-05-23
申请号：JP18202393
申请日：1993-06-28
申请人： KOKUSAI ELECTRIC CO LTD , HITACHI LTD
发明人： ADAKA SABURO , ORITSUKI RYOJI , HORII JUICHI , MURAMATSU FUMIO , TAKEDA TOMOHIKO , KAMEDA KENJI
IPC分类号： H01L29/78 , H01L21/336 , H01L29/786
摘要： PURPOSE:To prevent the characteristics from deteriorating while increasing the film deposition rate by constituting an active layer, i.e., an amorphous silicon layer, of a film deposited at low rate and a film deposited at high rate. CONSTITUTION:A Cr electrode is formed entirely on the surface of a glass substrate 1 and then a gate electrode is formed by wet etching. SiH4 and NH3 are fed into a plasma CVD chamber where silicon nitride 3 is deposited at high rate and then a vacuum state is sustained. Subsequently, the substrate 1 is transferred into another plasma CVD chamber into which SiH4 and H2 are fed in order to deposit first and second layers 9, 4 at low rate. The substrate 1 is further transferred into another plasma CVD chamber into which SiH4 and H2 are fed along with a doping gas of PH3 thus depositing an a-Si(n ) 5. This structure improve the interface characteristics with respect to the gate insulating film and prevents the characteristics from deteriorating while increasing the film deposition rate.

2. 发明专利

JPH07106597A THIN FILM TRANSISTOR 失效
公开(公告)号：JPH07106597A
公开(公告)日：1995-04-21
申请号：JP27776193
申请日：1993-10-08
申请人： KOKUSAI ELECTRIC CO LTD
发明人： KAMEDA KENJI , TAKEDA TOMOHIKO , ADAKA SABURO
IPC分类号： H01L21/318 , H01L29/78 , H01L29/786
摘要： PURPOSE:To enable formation of a silicon nitride film as a gate insulating layer at a high speed, without deteriorating transistor characteristics, and improve the throughput. CONSTITUTION:A silicon nitride (SiN) film as a gate insulating layer contains a low speed formation film 4 and a high speed formation film 3. Interfacial characteristics between the gate insulating layer and its adjacent layer are improved by interposing the low speed formation film, and the silicon nitride film can be formed at a high speed.

3. 发明专利

JPH08190994A ELECTRODE OF PLASMA PROCESSING DEVICE 失效
公开(公告)号：JPH08190994A
公开(公告)日：1996-07-23
申请号：JP1975795
申请日：1995-01-12
申请人： KOKUSAI ELECTRIC CO LTD
发明人： ADAKA SABURO
IPC分类号： H05H1/46 , C23C16/50 , C23F4/00 , H01L21/205 , H01L21/302 , H01L21/3065 , H01L21/316
摘要： PURPOSE: To obtain an adequate plasma by preventing the generation of deterioration, and the formation of fluoride and chloride, to the electrode of an aluminum material, in the electrodes of a plasma processing device. CONSTITUTION: In the electrodes of a plasma processing device which generates the plasma by applying a high-frequency power between the electrodes 3 and 4 provided oppositely, at least a shower plate 6 consisting of aluminum or an aluminum alloy of the electrode facing the plasma is heated and oxidized to form a dense oxidation membrane 16. By this oxidation membrane 16, a corrosion of the aluminum material to a halogen gas is suppressed, and the deterioration of the electrode, the formation of fluoride and chloride to the electrode are prevented.

4. 发明专利

JPH08209349A PLASMA CVD DEVICE 失效
公开(公告)号：JPH08209349A
公开(公告)日：1996-08-13
申请号：JP4133795
申请日：1995-02-06
申请人： KOKUSAI ELECTRIC CO LTD
发明人： ADAKA SABURO , OKAYAMA TOMOHIKO
IPC分类号： C23C16/44 , C23C16/50 , H01L21/205
摘要： PURPOSE: To improve the working rate of a plasma CVD device by eliminating the need for the replacement and cleaning of a reacting gas shower plate constituting a part of an upper electrode in the plasma CVD device. CONSTITUTION: This plasma CVD device has vertically opposed electrodes 3 and 4, a reacting gas is supplied, a high-frequency power is impressed on the electrodes to produce plasma, and a thin film is formed on a substrate 13 to be treated. The upper electrode is hollowed, is provided with a shower plate 15 on the lower face of the upper electrode, the shower plate is a porous metallic plate, and the reacting gas introduced into the hollow part 8 of the upper electrode is supplied through the shower plate. The reacting gas is uniformly supplied on the entire surface of the shower plate from the micropore of the porous metallic plate, the gas is never stagnated on the lower face of the upper electrode, homogeneous plasma produced, and further, a film is not deposited on the upper electrode due to self-purification effect of the reacting gas flow. Consequently, homogenous plasma is produced, and a homogeneous thin film is formed on the substrate.

5. 发明专利

JPH08153686A PHOTOLYTIC DEVICE 失效
公开(公告)号：JPH08153686A
公开(公告)日：1996-06-11
申请号：JP31750694
申请日：1994-11-28
申请人： KOKUSAI ELECTRIC CO LTD
发明人： ADAKA SABURO
IPC分类号： C23F4/04 , H01L21/205 , H01L21/263
摘要： PURPOSE: To provide a photolytic device which can prevent the deterioration of the transparency of a window due to precipitation of a reaction product. CONSTITUTION: A title photolytic device causes a reaction of reaction gas by casting light from a light source 6 on reaction gas introduced into a reaction chamber 1 through a transparent window 5. A heater 8 consisting of a nichrome line or a sheathed wire heater is provided in proximity to the window 5.

6. 发明专利

JPH025017B2 失效
公开(公告)号：JPH025017B2
公开(公告)日：1990-01-31
申请号：JP13680578
申请日：1978-11-08
申请人： HITACHI LTD
发明人： MARUYAMA EIICHI , ADAKA SABURO , INAO KYOHISA , IMAMURA YOSHINORI , TSUKADA TOSHIHISA , TAKASAKI YUKIO , HIRAI TADAAKI
IPC分类号： H01J29/45 , H01J29/36 , H01L31/0232 , H01L31/08 , H01L31/09

7. 发明专利

JPS6341183B2 失效
公开(公告)号：JPS6341183B2
公开(公告)日：1988-08-16
申请号：JP721883
申请日：1983-01-21
申请人： HITACHI LTD
发明人： ADAKA SABURO , MARUYAMA EIICHI , IMAMURA YOSHINORI , INAO KYOHISA , TSUKADA TOSHIHISA , TAKASAKI YUKIO , HIRAI TADAAKI
IPC分类号： H01J29/44 , H01J29/45 , H01J31/46 , H01L31/08

8. 发明专利

JPS61248489A OPTICAL INTEGRATED ELEMENT AND MANUFACTURE OF THE SAME 失效
公开(公告)号：JPS61248489A
公开(公告)日：1986-11-05
申请号：JP8855385
申请日：1985-04-26
申请人： HITACHI LTD
发明人： ADAKA SABURO
IPC分类号： H01L27/095 , H01L27/14 , H01L27/15 , H01L29/80 , H01S5/00 , H01S5/026
摘要： PURPOSE:To reduce a parasitic capacity and a dark current and realize a high- speed operation of an optical integrated element by a method wherein a step produced between a semiconductor laser and a photodiode and a field effect transistor is filled with SiO2. CONSTITUTION:A groove with a reverse trapezoid cross-section is formed in a semi-insulating GaAs substrate 1. An N type layer is deposited over the whole surface by liquid phase deposition and the N layer 3 is removed by etching except the part on the bottom surface in the groove. Then an I-type GaAs layer, an I-type GaAlAs window layer and an I-type GaAs cap layer are deposited by liquid phase deposition over the whole surface and etched. After SOG is applied by spin coating, a step in the semi-insulating GaAs substrate is filled by baking. Then, after the implantation of an N type layer d14 and the implantation of an N-type layer 13 are carried out by utilizing a resist 16 as a mask, positive side diffusion of a photodiode is carried out. Further, a source electrode 10, a drain electrode 11 and a negative side electrode 12 of the photodiode are deposited by a vacuum evaporation and a positive side electrode 18 and a gate electrode 9 are formed.

9. 发明专利

JPS61201463A OPTICAL INTEGRATED ELEMENT AND MANUFACTURE THEREOF 失效
公开(公告)号：JPS61201463A
公开(公告)日：1986-09-06
申请号：JP4110685
申请日：1985-03-04
申请人： HITACHI LTD
发明人： ADAKA SABURO
IPC分类号： H01L27/144 , H01L27/15 , H01S5/00 , H01S5/026
摘要： PURPOSE:To obtain a small-sized optical integrated element corresponding at high speed by manufacturing a light-emitting section or a light-receiving section and a field-effect type transistor in a monolithic manner. CONSTITUTION:Striped grooves are manufactured to Cr-doped or un-doped semi-insulating GaAs by a phosphoric acid group etching liquid by using a photo-resist, N-type GaAs is grown through liquid-phase growth, and N-type GaAs 5 is left only in the striped groove sections 6 through etching. An I layer 7 is grown on the GaAs 5 through liquid-phase growth, and the fundamental structure of a photodiode section 9 and a FET section 8 is manufactured through etching. The photodiode section takes an octagonal shape, and an interior angle alphais made larger than 90 deg., thus enabling lithography in the manufacture of the FET section.

10. 发明专利

JPH051634B2 失效
公开(公告)号：JPH051634B2
公开(公告)日：1993-01-08
申请号：JP13313984
申请日：1984-06-29
申请人： HITACHI LTD
发明人： ISHIOKA YOSHIO , SHIMOMOTO TAIJI , IMAMURA YOSHINORI , ADAKA SABURO , TANAKA YASUO , MATSUBARA HIROKAZU , TAKASAKI YUKIO , MARUYAMA EIICHI
IPC分类号： H01J29/45 , H01L31/0248 , H01L31/108 , H01L31/20

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