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1. 发明专利

JPH11111624A PLASMA CVD APPARATUS 失效
公开(公告)号：JPH11111624A
公开(公告)日：1999-04-23
申请号：JP27126397
申请日：1997-10-03
申请人： KOKUSAI ELECTRIC CO LTD
发明人： KAMEDA KENJI
IPC分类号： C23C16/50 , H01L21/205 , H01L21/31
摘要： PROBLEM TO BE SOLVED: To provide a plasma CVD apparatus which is capable of forming a uniform thin film on the entire surface of an electrode, of increasing the treating area of a substrate, and preventing the formation of the thin film, etc., around two electrodes. SOLUTION: The end section of an electrode surface 43 of a cathode 40 is bent in a direction X2 opposite to the supplying direction X1 of a reaction gas. An anode 50 is provided on the downstream side of the cathode 40 along the flow passage of the reaction gas. The end section of the electrode surface 51 of the anode 50 is bent, so that the entire electrode surface 51 is parallel to the entire electrode surface 43 of the cathode 40. In addition, a plurality of exhaust ports 53 are provided at a bent section 52 of the anode 50. An insulating member 60 seals the end section of the bent section 44 of the cathode 40 and the end section of the bent section 52 of the anode 50.

2. 发明专利

JP2000068208A PLASMA CVD APPARATUS 失效
公开(公告)号：JP2000068208A
公开(公告)日：2000-03-03
申请号：JP23302998
申请日：1998-08-19
申请人： KOKUSAI ELECTRIC CO LTD
发明人： KAMEDA KENJI , HIYAMA MAKOTO
IPC分类号： H01L21/205
摘要： PROBLEM TO BE SOLVED: To prevent an adherence of a foreign matter on a substrate by roughing a surface of a component in a reaction container in a range of a predetermined surface roughness, thereby suppressing releasing of a deposited film in the container at the time of moving. SOLUTION: A porous alumina film 13 of the state that a surface is suitably roughed is formed on a surface of a component 12 in a reaction container by explosive flame spraying. Its surface roughness L is set to about 10 to 100 μm. Since an adhesive force of the film to a base material becomes extremely strong in the case of forming a surface film by explosive flame spraying, occurrence of a foreign matter can be remarkably suppressed. Since a deposited film is strongly adhered to a protrusion and recess surface of the component 12 even if a film pressure is increased by depositing a film by roughing a surface of an electrode or a surface of other component 12 to a suitably rough surface in the container, releasing of the deposited film can be suppressed. Accordingly, a product fault or the like caused by the occurrence of forcign matters during processing can be reduced as much as possible.

3. 发明专利

JPH1051002A THIN FILM TRANSISTOR AND ITS THIN FILM-FORMING METHOD 失效
公开(公告)号：JPH1051002A
公开(公告)日：1998-02-20
申请号：JP20835296
申请日：1996-08-07
申请人： KOKUSAI ELECTRIC CO LTD
发明人： KAMEDA KENJI
IPC分类号： H01L21/205 , H01L21/336 , H01L29/786
摘要： PROBLEM TO BE SOLVED: To evade deterioration of characteristics which is to be caused by high speed formation of an amorphous thin film, and obtain excellent characteristics, by forming the amorphous thin film which continuously changes from a low speed formation film to a high speed formation film, from the side in contact with a gate insulating film. SOLUTION: An insulating film, e.g. a silicon nitride(SiN) film 3 of 300nm in thickness is formed on the front surface of a glass substrate 1, by a plasma CVD method. An amorphous silicon(a-Si) film 5 is formed on the SiN film 3 by a plasma CVD method. In this case, firstly discharge power is set at 20W, and the film is formed at a speed of about 10nm/min. Next, the discharge power is gradually increased up to 400W, and the film formation speed is set at 50nm/ min. The discharge power is again gradually decreased, and film formation is ended. The total thickness of the a-Si film 5 is 200nm. In the above process, the discharge power is changed, but reaction gas concentration may be changed, or both discharge power and reaction gas concentration may be changed.

4. 发明专利

JPH10149991A PREPARATORY TREATING METHOD OF TREATING CHAMBER MAINTENANCE OF SEMICONDUCTOR TREATING DEVICE 失效
公开(公告)号：JPH10149991A
公开(公告)日：1998-06-02
申请号：JP30944396
申请日：1996-11-20
申请人： KOKUSAI ELECTRIC CO LTD
发明人： MAKITANI MASAHIRO , YOKAWA TAKASHI , TERASAKI MASATO , KOTAKE FUMIE , KAMEDA KENJI
IPC分类号： H01L21/205 , H01L21/324
摘要： PROBLEM TO BE SOLVED: To provide a preparation treating method of treating chamber maintenance of a semiconductor treating device by which the temperature in the treating chamber can be dropped efficiently and the maintenance time of the chamber can be shortened remarkably. SOLUTION: The pressure, time, and dropped temperature at the time of performing chamber vent are set in a prescribed recipe. After a film forming chamber is evacuated to a vacuum, an N2 gas is supplied to the chamber (chamber vent) through a pump until the pressure in the chamber becomes the pressure set in the recipe and the inside of the camber is maintained in the same state until the time set in the recipe elapses (steps 101-103). When the temperature in the film forming chamber reaches the target dropped temperature when the holding time elapses and the pump is completely stopped, a batch purging treatment is performed. When the temperature does not reach the target value, the steps after 101 are repeated until the temperature in the film forming chamber reaches the target dropped temperature set in the recipe.

5. 发明专利

JPH07135319A THIN FILM TRANSISTOR AND ITS FABRICATION 失效
公开(公告)号：JPH07135319A
公开(公告)日：1995-05-23
申请号：JP18202393
申请日：1993-06-28
申请人： KOKUSAI ELECTRIC CO LTD , HITACHI LTD
发明人： ADAKA SABURO , ORITSUKI RYOJI , HORII JUICHI , MURAMATSU FUMIO , TAKEDA TOMOHIKO , KAMEDA KENJI
IPC分类号： H01L29/78 , H01L21/336 , H01L29/786
摘要： PURPOSE:To prevent the characteristics from deteriorating while increasing the film deposition rate by constituting an active layer, i.e., an amorphous silicon layer, of a film deposited at low rate and a film deposited at high rate. CONSTITUTION:A Cr electrode is formed entirely on the surface of a glass substrate 1 and then a gate electrode is formed by wet etching. SiH4 and NH3 are fed into a plasma CVD chamber where silicon nitride 3 is deposited at high rate and then a vacuum state is sustained. Subsequently, the substrate 1 is transferred into another plasma CVD chamber into which SiH4 and H2 are fed in order to deposit first and second layers 9, 4 at low rate. The substrate 1 is further transferred into another plasma CVD chamber into which SiH4 and H2 are fed along with a doping gas of PH3 thus depositing an a-Si(n ) 5. This structure improve the interface characteristics with respect to the gate insulating film and prevents the characteristics from deteriorating while increasing the film deposition rate.

6. 发明专利

JPH07106597A THIN FILM TRANSISTOR 失效
公开(公告)号：JPH07106597A
公开(公告)日：1995-04-21
申请号：JP27776193
申请日：1993-10-08
申请人： KOKUSAI ELECTRIC CO LTD
发明人： KAMEDA KENJI , TAKEDA TOMOHIKO , ADAKA SABURO
IPC分类号： H01L21/318 , H01L29/78 , H01L29/786
摘要： PURPOSE:To enable formation of a silicon nitride film as a gate insulating layer at a high speed, without deteriorating transistor characteristics, and improve the throughput. CONSTITUTION:A silicon nitride (SiN) film as a gate insulating layer contains a low speed formation film 4 and a high speed formation film 3. Interfacial characteristics between the gate insulating layer and its adjacent layer are improved by interposing the low speed formation film, and the silicon nitride film can be formed at a high speed.

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