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1. 发明专利

JPH07135319A THIN FILM TRANSISTOR AND ITS FABRICATION 失效
公开(公告)号：JPH07135319A
公开(公告)日：1995-05-23
申请号：JP18202393
申请日：1993-06-28
申请人： KOKUSAI ELECTRIC CO LTD , HITACHI LTD
发明人： ADAKA SABURO , ORITSUKI RYOJI , HORII JUICHI , MURAMATSU FUMIO , TAKEDA TOMOHIKO , KAMEDA KENJI
IPC分类号： H01L29/78 , H01L21/336 , H01L29/786
摘要： PURPOSE:To prevent the characteristics from deteriorating while increasing the film deposition rate by constituting an active layer, i.e., an amorphous silicon layer, of a film deposited at low rate and a film deposited at high rate. CONSTITUTION:A Cr electrode is formed entirely on the surface of a glass substrate 1 and then a gate electrode is formed by wet etching. SiH4 and NH3 are fed into a plasma CVD chamber where silicon nitride 3 is deposited at high rate and then a vacuum state is sustained. Subsequently, the substrate 1 is transferred into another plasma CVD chamber into which SiH4 and H2 are fed in order to deposit first and second layers 9, 4 at low rate. The substrate 1 is further transferred into another plasma CVD chamber into which SiH4 and H2 are fed along with a doping gas of PH3 thus depositing an a-Si(n ) 5. This structure improve the interface characteristics with respect to the gate insulating film and prevents the characteristics from deteriorating while increasing the film deposition rate.

2. 发明专利

JPH025017B2 失效
公开(公告)号：JPH025017B2
公开(公告)日：1990-01-31
申请号：JP13680578
申请日：1978-11-08
申请人： HITACHI LTD
发明人： MARUYAMA EIICHI , ADAKA SABURO , INAO KYOHISA , IMAMURA YOSHINORI , TSUKADA TOSHIHISA , TAKASAKI YUKIO , HIRAI TADAAKI
IPC分类号： H01J29/45 , H01J29/36 , H01L31/0232 , H01L31/08 , H01L31/09

3. 发明专利

JPS6341183B2 失效
公开(公告)号：JPS6341183B2
公开(公告)日：1988-08-16
申请号：JP721883
申请日：1983-01-21
申请人： HITACHI LTD
发明人： ADAKA SABURO , MARUYAMA EIICHI , IMAMURA YOSHINORI , INAO KYOHISA , TSUKADA TOSHIHISA , TAKASAKI YUKIO , HIRAI TADAAKI
IPC分类号： H01J29/44 , H01J29/45 , H01J31/46 , H01L31/08

4. 发明专利

JPS61248489A OPTICAL INTEGRATED ELEMENT AND MANUFACTURE OF THE SAME 失效
公开(公告)号：JPS61248489A
公开(公告)日：1986-11-05
申请号：JP8855385
申请日：1985-04-26
申请人： HITACHI LTD
发明人： ADAKA SABURO
IPC分类号： H01L27/095 , H01L27/14 , H01L27/15 , H01L29/80 , H01S5/00 , H01S5/026
摘要： PURPOSE:To reduce a parasitic capacity and a dark current and realize a high- speed operation of an optical integrated element by a method wherein a step produced between a semiconductor laser and a photodiode and a field effect transistor is filled with SiO2. CONSTITUTION:A groove with a reverse trapezoid cross-section is formed in a semi-insulating GaAs substrate 1. An N type layer is deposited over the whole surface by liquid phase deposition and the N layer 3 is removed by etching except the part on the bottom surface in the groove. Then an I-type GaAs layer, an I-type GaAlAs window layer and an I-type GaAs cap layer are deposited by liquid phase deposition over the whole surface and etched. After SOG is applied by spin coating, a step in the semi-insulating GaAs substrate is filled by baking. Then, after the implantation of an N type layer d14 and the implantation of an N-type layer 13 are carried out by utilizing a resist 16 as a mask, positive side diffusion of a photodiode is carried out. Further, a source electrode 10, a drain electrode 11 and a negative side electrode 12 of the photodiode are deposited by a vacuum evaporation and a positive side electrode 18 and a gate electrode 9 are formed.

5. 发明专利

JPS61201463A OPTICAL INTEGRATED ELEMENT AND MANUFACTURE THEREOF 失效
公开(公告)号：JPS61201463A
公开(公告)日：1986-09-06
申请号：JP4110685
申请日：1985-03-04
申请人： HITACHI LTD
发明人： ADAKA SABURO
IPC分类号： H01L27/144 , H01L27/15 , H01S5/00 , H01S5/026
摘要： PURPOSE:To obtain a small-sized optical integrated element corresponding at high speed by manufacturing a light-emitting section or a light-receiving section and a field-effect type transistor in a monolithic manner. CONSTITUTION:Striped grooves are manufactured to Cr-doped or un-doped semi-insulating GaAs by a phosphoric acid group etching liquid by using a photo-resist, N-type GaAs is grown through liquid-phase growth, and N-type GaAs 5 is left only in the striped groove sections 6 through etching. An I layer 7 is grown on the GaAs 5 through liquid-phase growth, and the fundamental structure of a photodiode section 9 and a FET section 8 is manufactured through etching. The photodiode section takes an octagonal shape, and an interior angle alphais made larger than 90 deg., thus enabling lithography in the manufacture of the FET section.

6. 发明专利

JPH051634B2 失效
公开(公告)号：JPH051634B2
公开(公告)日：1993-01-08
申请号：JP13313984
申请日：1984-06-29
申请人： HITACHI LTD
发明人： ISHIOKA YOSHIO , SHIMOMOTO TAIJI , IMAMURA YOSHINORI , ADAKA SABURO , TANAKA YASUO , MATSUBARA HIROKAZU , TAKASAKI YUKIO , MARUYAMA EIICHI
IPC分类号： H01J29/45 , H01L31/0248 , H01L31/108 , H01L31/20

7. 发明专利

JPH03266351A DISCHARGE LAMP DEVICE FOR VACUUM 失效
公开(公告)号：JPH03266351A
公开(公告)日：1991-11-27
申请号：JP6425290
申请日：1990-03-16
申请人： HITACHI LTD , BABCOCK HITACHI KK
发明人： KAWASUMI KENICHI , INADA AKIO , ADAKA SABURO
IPC分类号： H01J61/24 , H01J5/50
摘要： PURPOSE:To make a vapor pressure properly controllable without electric breakdown at the time of supplying a high voltage because of the short time for drying and discharging, by filling the gap between the housing of an end part of a discharge lamp and the end part with a metallic foil having an excellent heat conductivity, small gas discharge and excellent buffer effect. CONSTITUTION:The stem 3 for an electrode mount is airtightly connected to a connection tube 4. Into the connection tube 4, a power supply line 5 is inserted. The connection tube 4 and a housing 9 are sealed airtight in a vacuum with O rings 21, 22. The gap between the inner wall of the housing 9 and an end part of the discharge lamp, which are integrally formed with a flange 2, is buried by filling a metallic foil 28 to conduct heat easily from the end part of the discharge lamp to the housing 9. This shortens the discharge time, so that the outer wall of the hosing 9 has a proper temperature control effect on the vapor pressure control of the luminescent metal in the discharge lamp. As the power supply line 5 to the discharge lamp is in the air, no electric breakdown is expected between the power supply lines 5.

8. 发明专利

JPS61123829A Device for reading radiation image information 失效
标题翻译：读取辐射图像信息的装置
公开(公告)号：JPS61123829A
公开(公告)日：1986-06-11
申请号：JP24443584
申请日：1984-11-21
申请人： Hitachi Ltd
发明人： KANO TAKESHI , TAKAHASHI TETSUHIKO , ADAKA SABURO , YOKOUCHI HISATAKE , UMETANI KEIJI , OKAJIMA KENICHI , SUZUKI RYUICHI
IPC分类号： G01T1/00 , A61B6/00 , C09K11/08 , C09K11/61 , G03B42/02 , G21K4/00
摘要： PURPOSE: To obtain image information of high quality with a small dose of radiation by converting radiation image information recorded on a CsI case stimulative fluorescent screen into emission intensity by optical scanning.
CONSTITUTION: A stimulative fluorescent screen of 200μm thickness formed by vapor-depositing CsI powder on an Al substrate has fine cracks in a direction perpendicular to the surface of the screen, so it is optically transparent in the direction and is not transparent in a direction parallel to the surface of the screen. X-rays from a radiation generating source 1 are irradiated on the screen 3 cooled to the temp. of liq. nitrogen through a object 2, and stimulated light emited by scanning the surface of the screen 2 with semiconductor laser light 5 is introduced into a photomultiplier 6 and displayed at an image processing and displaying part 7. The scattering of the light beam 5 for reading is reduced, giving an image having high space resolution, so image information of high quality can be obtd. with a small dose of radiation.
COPYRIGHT: (C)1986,JPO&Japio
摘要翻译：目的：通过将通过光学扫描将记录在CsI情况刺激荧光屏上的辐射图像信息转换为发射强度，以小剂量的辐射获得高质量的图像信息。构成：通过在Al衬底上气相沉积CsI粉末形成的200μm厚度的刺激荧光屏在垂直于屏幕表面的方向上具有细微的裂纹，因此在方向上是光学透明的，并且在平行方向上不透明到屏幕的表面。来自辐射发生源1的X射线照射在冷却至温度的屏幕3上。的liq。通过物体2的氮气和通过用半导体激光5扫描屏幕2的表面而发出的受激光被引入到光电倍增管6中并在图像处理和显示部分7处显示。用于读取的光束5的散射是减少，给出具有高空间分辨率的图像，因此可以看出高质量的图像信息。用少量的辐射。

9. 发明专利

JPH0234192B2 失效
公开(公告)号：JPH0234192B2
公开(公告)日：1990-08-01
申请号：JP10252980
申请日：1980-07-28
申请人： HITACHI LTD
发明人： ISHIOKA YOSHIO , SHIMOMOTO TAIJI , IMAMURA YOSHINORI , ADAKA SABURO , TANAKA YASUO , MATSUBARA HIROKAZU , TAKASAKI YUKIO , MARUYAMA EIICHI
IPC分类号： G03G5/08 , B05D3/02 , B05D3/04 , H01J9/233 , H01L21/205 , H01L31/04 , H01L31/08 , H01L31/10

10. 发明专利

JPS6340014B2 失效
公开(公告)号：JPS6340014B2
公开(公告)日：1988-08-09
申请号：JP1154783
申请日：1983-01-28
申请人： HITACHI LTD
发明人： ADAKA SABURO , MARUYAMA EIICHI , INAO KYOHISA , IMAMURA YOSHINORI , TSUKADA TOSHIHISA , TAKASAKI YUKIO , HIRAI TADAAKI
IPC分类号： H01J29/45 , H01J31/49

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