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1. 发明专利

JP2012142367A Method for manufacturing semiconductor device and substrate processing apparatus 审中-公开
标题翻译：制造半导体器件和衬底加工设备的方法
公开(公告)号：JP2012142367A
公开(公告)日：2012-07-26
申请号：JP2010292960
申请日：2010-12-28
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： OGURA SHINTARO , TAKEBAYASHI YUJI , YAMAMOTO KATSUHIKO , YAMAZAKI HIROHISA
IPC分类号： H01L21/316 , C23C16/40 , H01L21/31 , H01L21/8242 , H01L27/108
CPC分类号： C23C16/405 , C23C16/45546 , H01L21/02186 , H01L21/02189 , H01L21/022 , H01L21/0228
摘要： PROBLEM TO BE SOLVED: To make the crystal structure of at lease one part of a TiO film formed above a TiN film as a brookite-type structure or a rutile-type structure, and enhance the dielectric constant of the TiO film.SOLUTION: The crystal structure of at lease one part of a zirconium oxide film is made as a cubic structure or a tetragonal structure by controlling the film thickness of the zirconium oxide film. Thereby, the crystal structure of at lease one part of a titanium oxide film is made as a brookite-type structure or a rutile-type structure.
摘要翻译：要解决的问题为了使作为板钛矿型结构或金红石型结构的TiN膜上方形成TiO 2膜的至少一部分的晶体结构，并且提高TiO膜的介电常数。解决方案：通过控制氧化锆膜的膜厚，氧化锆膜的至少一部分的晶体结构被制成立方结构或四方结构。因此，至少一部分氧化钛膜的晶体结构被制成板钛矿型结构或金红石型结构。版权所有（C）2012，JPO＆INPIT

2. 发明专利

JP2010132958A Substrate treatment apparatus 审中-公开
标题翻译：基板处理设备
公开(公告)号：JP2010132958A
公开(公告)日：2010-06-17
申请号：JP2008308921
申请日：2008-12-03
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： OGURA SHINTARO
IPC分类号： C23C16/455 , C23C16/458 , H01L21/31
摘要： PROBLEM TO BE SOLVED: To provide a substrate treatment apparatus which can improve in-plane film thickness uniformity and inter-plane film thickness uniformity.
SOLUTION: In the substrate treatment apparatus where a boat 30 stacked with a plurality of wafers and holding them is stored in a treatment chamber, and treatment gas is made to flow through the respective wafers so as to deposit films on the respective wafers, a plurality of supporting parts 67 and a plurality of holding grooves 68 are alternately arranged at the boat 30, and the wafers and rings 58 are held to the respective supporting parts 67 and the respective holding grooves 68. The plurality of rings 58 are respectively set in such a manner that the inside diameter of circular holes 58a gradually increases from the lower edge toward the upper edge in the boat 30. By gradually reducing the coating weight of the films stuck to the respective steps of rings during the film deposition, the coating weight of the films stuck to the wafers respectively located in the lower sides of the respective steps of rings can be gradually reduced, the film thickness uniformity among the wafers in the case the film thickness uniformity among the wafers is continuously deteriorated from the lower edge to the upper edge in the boat can be improved.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：解决的问题：提供一种能够提高面内膜厚均匀性和层间膜厚均匀性的基板处理装置。解决方案：在其中堆叠有多个晶片并保持它们的舟皿30被储存在处理室中的基板处理装置中，并且使处理气体流过各个晶片以便在各个晶片上沉积膜，多个支撑部67和多个保持槽68在船30处交替布置，并且晶片和环58保持在相应的支撑部分67和相应的保持槽68上。多个环58分别以使得圆形孔58a的内径从舟状物30的下边缘朝向上边缘逐渐增加的方式设置。通过在膜沉积期间逐渐减小粘附到各个台阶上的膜的涂层重量，粘附在分别位于环的各个台阶的下侧的晶片的膜的涂层重量可以逐渐减小，晶片之间的膜厚均匀性在这种情况下，可以提高晶片之间的膜厚度均匀性从船的下边缘到上边缘连续劣化。版权所有（C）2010，JPO＆INPIT

3. 发明专利

JP2012134311A Semiconductor device manufacturing method and substrate processing apparatus 审中-公开
标题翻译：半导体器件制造方法和基板处理装置
公开(公告)号：JP2012134311A
公开(公告)日：2012-07-12
申请号：JP2010284827
申请日：2010-12-21
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： YAMAZAKI HIROHISA , OGAWA ARIHITO , ITAYA HIDEJI , OGURA SHINTARO , TAKEBAYASHI YUJI
IPC分类号： H01L21/314 , C23C16/40 , C23C16/44 , H01L21/31 , H01L21/316
摘要： PROBLEM TO BE SOLVED: To inhibit oxidation of an underlying electrode when a metal oxide film is formed by using a strongly oxidative oxygen-containing gas.SOLUTION: A step of forming a first metal oxide layer 510 immediately above an electrode 610 by performing: a step of supplying at least one type of metal content gas in a processing chamber and discharging the gas to form an absorption layer of the metal content gas on an electrode 610 and a step of subsequently supplying a first oxygen-containing gas in the processing chamber; and a step of forming a second metal oxide layer 560 on the first metal oxide layer 510 by performing: a step of supplying the metal content gas in the processing chamber and discharging the gas to form an absorption layer of the metal content gas on the first metal oxide layer 510 and a step of subsequently supplying a second oxygen-containing gas having an oxidation power stronger than that of the first oxygen-containing gas in the processing chamber; are sequentially performed in this order.
摘要翻译：要解决的问题：当通过使用强氧化性含氧气体形成金属氧化物膜时，抑制底层电极的氧化。解决方案：通过以下步骤形成刚好在电极610上方的第一金属氧化物层510：在处理室中供应至少一种类型的金属含量气体并排出气体以形成吸收层的步骤电极610上的金属含量气体和随后在处理室中供应第一含氧气体的步骤; 以及通过以下步骤在第一金属氧化物层510上形成第二金属氧化物层560的步骤：在处理室中供给金属含量气体并排出气体以在第一金属氧化物层510上形成金属含量气体的吸收层的步骤金属氧化物层510和随后在处理室中提供具有比第一含氧气体的氧化强度更大的氧化强度的第二含氧气体的步骤; 按顺序执行。版权所有（C）2012，JPO＆INPIT

4. 发明专利

JP2011155033A Method of manufacturing semiconductor device, and semiconductor device 审中-公开
标题翻译：制造半导体器件的方法和半导体器件
公开(公告)号：JP2011155033A
公开(公告)日：2011-08-11
申请号：JP2010013863
申请日：2010-01-26
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： ASHITANI ATSUHIKO , TAKEBAYASHI YUJI , SAKAI MASANORI , OGURA SHINTARO
IPC分类号： H01L21/316 , C23C16/40 , C23C16/56 , H01L21/31 , H01L21/8242 , H01L21/8247 , H01L27/108 , H01L27/115 , H01L29/78 , H01L29/788 , H01L29/792
摘要： PROBLEM TO BE SOLVED: To obtain a capacitor insulating film having a crystal structure of high dielectric constant by reducing the effect of crystallinity of an underling film. SOLUTION: A method of manufacturing a semiconductor device includes an amorphous film formation step for forming an amorphous film 320 on a crystalline film 310 which is formed on a substrate 200 and a crystalline insulating film formation step for forming an insulating film 330 having a crystal structure controlled independently from the crystal structure of the crystalline film 310 on the amorphous film 320. The crystalline insulating film formation step includes a phase transition step for causing phase transition of at least a part of the insulating film 330 to the tetragonal system by heating the substrate 200. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：通过降低底膜的结晶度的影响，获得具有高介电常数的晶体结构的电容器绝缘膜。解决方案：一种制造半导体器件的方法包括：在形成在衬底200上的结晶膜310上形成非晶膜320的非晶形成步骤和用于形成绝缘膜330的结晶绝缘膜形成步骤，独立于非晶膜320上的晶体膜310的晶体结构控制的晶体结构。晶体绝缘膜形成步骤包括相变步骤，用于使至少一部分绝缘膜330相对于四方晶系的相转变为加热基板200.版权所有（C）2011，JPO＆INPIT

5. 发明专利

JP2010050439A Substrate processing apparatus 有权
标题翻译：基板加工设备
公开(公告)号：JP2010050439A
公开(公告)日：2010-03-04
申请号：JP2009134148
申请日：2009-06-03
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： OGURA SHINTARO , TAKEBAYASHI YUJI , ASHITANI ATSUHIKO , OKADA ITARU
IPC分类号： H01L21/31 , C23C16/455
CPC分类号： H01L21/67109 , C23C16/405 , C23C16/45546 , C23C16/45578 , H01L21/3141 , H01L21/31641
摘要： PROBLEM TO BE SOLVED: To provide a substrate processing apparatus wherein film thickness uniformity of a thin film formed on a substrate is improved. SOLUTION: The substrate processing apparatus includes: an inner tube 204 in which a substrate 101 is stored; an outer tube 203 enclosing the inner tube 204; gas nozzles 233a, 233b installed in the inner tube 204; gas injection holes 248a, 248b formed in the gas nozzles 233a, 233b; a gas supply unit for supplying gas to an inside of the inner tube 204 through the gas nozzles 233a, 233b; gas exhaust outlets 204a, 204b formed in a sidewall of the inner tube 204; and an exhaust unit that exhausts a gap between the outer tube 203 and the inner tube 204 to create a gas stream inside the inner tube 204 from the gas injection holes 248a, 248b to the gas exhaust outlets 204a, 204b. The sidewall of the inner tube 204 is configured such that the distance between the outer edge of the substrate and the gas exhaust outlets 204a, 204b is greater than the distance between the outer edge of the substrate and the gas injection holes 248a, 248b. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种基板处理装置，其中改善了形成在基板上的薄膜的膜厚均匀性。解决方案：基板处理装置包括：内管204，其中存储有基板101; 封闭内管204的外管203; 安装在内管204中的气体喷嘴233a，233b; 形成在气体喷嘴233a，233b中的气体注入孔248a，248b; 气体供给单元，其通过气体喷嘴233a，233b向内管204的内部供给气体; 形成在内管204的侧壁中的排气口204a，204b; 以及排气单元，排出外管203和内管204之间的间隙，以在内管204内形成从气体注入孔248a，248b到排气口204a，204b的气流。内管204的侧壁被构造成使得基板的外边缘与排气出口204a，204b之间的距离大于基板的外边缘与气体注入孔248a，248b之间的距离。版权所有（C）2010，JPO＆INPIT

6. 发明专利

JP2012104720A Substrate processing apparatus, method of manufacturing semiconductor device and semiconductor device 有权
标题翻译：基板加工装置，制造半导体器件和半导体器件的方法
公开(公告)号：JP2012104720A
公开(公告)日：2012-05-31
申请号：JP2010253231
申请日：2010-11-11
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： SASAKI SHINYA , TAKEBAYASHI YUJI , OGURA SHINTARO
IPC分类号： H01L21/31 , C01F7/02 , C23C16/44
CPC分类号： H01L21/0228 , C23C16/403 , C23C16/45527 , C23C16/45546 , C23C16/45578 , H01L21/02178
摘要： PROBLEM TO BE SOLVED: To reduce deposition of reaction products or decomposition products on the inner wall of a nozzle, and to prevent foreign matters from scattering into the processing chamber.SOLUTION: The substrate processing apparatus comprises a processing chamber, a heating unit, a raw gas supply unit, a raw gas nozzle, an exhaust unit, and a control unit which controls at least the heating unit, the raw gas supply unit and the exhaust unit. The raw gas nozzle is disposed at a predetermined position in the processing chamber where the raw gas is not decomposed even if the temperature in the processing chamber is higher than the thermal decomposition temperature of the raw gas. The control unit repeats a cycle, including a process of supplying raw gas into the processing chamber at different flow velocities so as not to be mixed, a predetermined number of times.
摘要翻译：要解决的问题：为了减少反应产物或分解产物在喷嘴的内壁上的沉积，并且防止异物散射到处理室中。原材料处理装置包括处理室，加热单元，原料气体供给单元，原料气体喷嘴，排气单元和至少控制加热单元的控制单元，原料气体供给单元和排气单元。即使处理室内的温度高于原料气体的热分解温度，原料气体喷嘴配置在处理室内的原料气体不分解的规定位置。控制单元重复循环，包括以不同的流速将原料气体以不同的流速供给到处理室中的过程，预定次数。版权所有（C）2012，JPO＆INPIT

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