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1. 发明专利

JP2012138530A Substrate manufacturing method, semiconductor device manufacturing method and substrate processing apparatus 审中-公开
标题翻译：基板制造方法，半导体器件制造方法和基板处理装置
公开(公告)号：JP2012138530A
公开(公告)日：2012-07-19
申请号：JP2010291426
申请日：2010-12-28
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： NOMURA HISASHI , KASAHARA OSAMU , HORII SADAYOSHI , TOYODA KAZUYUKI , NOGUCHI YOHEI , NAKAMURA NAOTO , TANIGUCHI TAKESHI , KOSHIMIZU TAKASHI
IPC分类号： H01L21/205 , C23C16/34
摘要： PROBLEM TO BE SOLVED: To provide a film formation method and a substrate processing apparatus which can increase the number of substrates capable of processing at once, and improve productivity of a GaN epitaxial film.SOLUTION: A GaN film formation method comprises: a transferring step of transferring a substrate into a processing chamber; an initial film formation step including a first step of supplying a gallium chloride gas into the processing chamber, a first purge step of purging the gallium chloride gas from the processing chamber, a second step of supplying ammonia gas into the processing chamber after performing the first purge step, and a second purge step of purging the ammonia gas from the processing chamber; and an epitaxial film formation step of simultaneously supplying the gallium chloride gas and the ammonia gas into the processing chamber after performing the initial film formation step to form an epitaxial film.
摘要翻译：解决的问题：提供能够一次增加能够加工的基板的数量的成膜方法和基板处理装置，提高GaN外延膜的生产率。解决方案：GaN膜形成方法包括：将衬底转移到处理室中的转移步骤; 初始成膜步骤，包括向处理室供应氯化镓气体的第一步骤，从处理室中清除氯化镓气体的第一吹扫步骤，在执行第一步骤之后将氨气供应到处理室中的第二步骤吹扫步骤和从处理室吹扫氨气的第二吹扫步骤; 以及在进行初始成膜步骤之后将氯化镓气体和氨气同时供给到处理室中以形成外延膜的外延膜形成步骤。版权所有（C）2012，JPO＆INPIT

2. 发明专利

JP2004296467A Substrate processing apparatus 审中-公开
公开(公告)号：JP2004296467A
公开(公告)日：2004-10-21
申请号：JP2003082631
申请日：2003-03-25
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： UEDA TATESHI , KOSHIMIZU TAKASHI
IPC分类号： H01L21/3065
摘要： PROBLEM TO BE SOLVED: To improve yield by collecting foreign matters to be generated from a plasma source.
SOLUTION: A substrate processing apparatus has a processing chamber 1 for processing a substrate 6, and a gas activation section 11 provided outside the chamber 1 and generating plasma. A mixed gas piping 15 for supplying a mixed gas of N
2 and NF
3 is connected to the upstream side of the section 11. A gas introducing piping 2 as an activation gas supplying piping is connected to the downstream side of the unit 11, and an NH
3 piping 12 for supplying an NH
3 is connected to the middle portion thereof. The piping 2 is connected to the chamber 1 and an NH
3 gas is exposed to the gas activated by the plasma generated in the unit 11 to activate the NH
3 gas, and the activated species are supplied to the chamber 1. A foreign matter collecting unit 22 for collecting the foreign matters generated due to inner wall shock caused by the NH
3 gas etc ionized. in the section 11 is provided on the piping 2 for connecting the section 11 to the chamber 1.
COPYRIGHT: (C)2005,JPO&NCIPI

3. 发明专利

JP2012099765A Substrate processing apparatus 审中-公开
标题翻译：基板加工设备
公开(公告)号：JP2012099765A
公开(公告)日：2012-05-24
申请号：JP2010248537
申请日：2010-11-05
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： KOSHIMIZU TAKASHI , TOYODA KAZUYUKI
IPC分类号： H01L21/31 , C23C16/455 , C23C16/509 , H01L21/318
摘要： PROBLEM TO BE SOLVED: To obtain a film quality equivalent to that when the process temperature is high even when the process temperature is low while allowing high speed and low temperature in a film deposition process, in the ALD deposition process utilizing plasma.SOLUTION: A substrate processing apparatus comprises: a processing chamber in which a substrate is processed; a substrate holder which holds a plurality of substrates in stacked state; an electrode group which generates plasma between the substrates when power is supplied, respectively, to the electrode bodies in multi-stages; a power introduction unit which supplies power to each electrode body; a first process gas supply system which supplies a first process gas into the processing chamber; a second process gas supply system which supplies a second process gas into the processing chamber; an exhaust system which exhausts the interior of the processing chamber; and a control unit which controls the power introduction unit, the first process gas supply system, the second process gas supply system and the exhaust system so that ALD deposition process is performed.
摘要翻译：要解决的问题：即使在处理温度低的同时，也可以在利用等离子体的ALD沉积工艺中获得与在成膜工艺中允许高速和低温时相当的处理温度的膜质量。解决方案：一种基板处理装置，包括：处理室，其中处理基板; 衬底保持器，其以堆叠状态保持多个衬底; 电源组，其分别在多级供给电极体时在基板之间产生等离子体; 功率引入单元，其向每个电极体供电; 第一处理气体供应系统，其将第一处理气体供应到处理室中; 第二处理气体供应系统，其将第二处理气体供应到所述处理室中; 排出处理室内部的排气系统; 以及控制单元，其控制功率引入单元，第一处理气体供应系统，第二处理气体供应系统和排气系统，从而执行ALD沉积处理。版权所有（C）2012，JPO＆INPIT

4. 发明专利

JP2005011835A Plasma treatment device 审中-公开
标题翻译：等离子体处理装置
公开(公告)号：JP2005011835A
公开(公告)日：2005-01-13
申请号：JP2003170740
申请日：2003-06-16
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： SATO SEISHIN , SATO NORIYOSHI , KOSHIMIZU TAKASHI , OGAWA UNRYU
IPC分类号： C23C16/505 , H01L21/31
摘要： PROBLEM TO BE SOLVED: To provide a plasma application device that can effectively remove electrostatically charged fine particles.
SOLUTION: In a plasma CVD apparatus, a gas used for treating a semiconductor is introduced into a vacuum vessel after the inside of the vessel is evacuated to a vacuum state, and a positive voltage is applied to a conductor of an NFP collector 40. When high-frequency power is impressed upon a lower electrode 32 from a high-frequency power source 120, fine particles are produced and electrostatically charged in negative polarity by means of an electronic sheath provided on the lower electrode 32. The fine particles electrostatically charged in negative polarity are guided by fine particle guiding grooves 320-1 to 320-8 and, in addition, induced by the conductor of the NFP collector 40 and removed from the surface of the lower electrode 32. In addition, when the metallic lower electrode 32 made of aluminum etc., is coated with a ceramic coating film 329, the occurrence of metallic contamination can be prevented.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供能够有效地去除带静电的微粒的等离子体施加装置。解决方案：在等离子体CVD装置中，将容器内部抽真空至真空状态之后，将用于处理半导体的气体引入真空容器中，并将正电压施加到NFP收集器的导体当高频电源从高频电源120施加到下电极32上时，通过设置在下电极32上的电子护套产生微粒并以负极性静电充电。微粒静电充电为负极性的微粒引导槽320-1至320-8引导，另外由NFP收集器40的导体引导并从下电极32的表面移除。此外，当金属低由铝等制成的电极32涂覆有陶瓷涂膜329，可以防止金属污染的发生。版权所有（C）2005，JPO＆NCIPI

5. 发明专利

JP2011176177A Method of manufacturing semiconductor device, semiconductor device and substrate processing apparatus 审中-公开
标题翻译：制造半导体器件，半导体器件和衬底加工设备的方法
公开(公告)号：JP2011176177A
公开(公告)日：2011-09-08
申请号：JP2010039844
申请日：2010-02-25
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： TOYODA KAZUYUKI , KASAHARA OSAMU , HIROSE YOSHIRO , NAKAMURA YOSHINOBU , KOSHIMIZU TAKASHI
IPC分类号： H01L21/027 , C23C16/42 , H01L21/205 , H01L21/316
摘要： PROBLEM TO BE SOLVED: To form a film of good quality at a low temperature on a substrate having a resist layer or an amorphous carbon layer formed on its surface.
SOLUTION: A method of manufacturing a semiconductor device carries out: an HMDS gas exposure step for exposing a substrate having a resist layer or an amorphous carbon layer on its surface to an HMDS gas; and an oxygen-containing gas exposure step for exposing the substrate to an oxygen-containing gas, thereby forming a silicon oxide film at least on the resist layer or the amorphous carbon layer. Thus, a film having fewer impurities, and a low wet etching rate, is formed on the resist or amorphous carbon layer (ACL) at a low processing temperature not causing damage to the resist or amorphous carbon layer (ACL) on the surface of the substrate.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：在其表面上形成有抗蚀剂层或无定形碳层的基板上，在低温下形成质量好的膜。解决方案：制造半导体器件的方法执行：HMDS气体暴露步骤，用于将其表面上具有抗蚀剂层或无定形碳层的衬底暴露于HMDS气体; 以及含氧气体暴露步骤，用于将衬底暴露于含氧气体，从而至少在抗蚀剂层或无定形碳层上形成氧化硅膜。因此，在低加工温度下在抗蚀剂或无定形碳层（ACL）上形成杂质少，湿蚀刻速度低的膜，不会损害表面上的抗蚀剂或无定形碳层（ACL）基质。版权所有（C）2011，JPO＆INPIT

6. 发明专利

JP2010050004A Plasma generating electrode 有权
标题翻译：等离子体发生电极
公开(公告)号：JP2010050004A
公开(公告)日：2010-03-04
申请号：JP2008214606
申请日：2008-08-22
申请人： Adtec Plasma Technology Co Ltd , Hitachi Kokusai Electric Inc , Hiroshi Mase , Noriyoshi Sato , 徳芳佐藤 , 株式会社アドテックプラズマテクノロジー , 株式会社日立国際電気 , 寛真瀬
发明人： KOSHIMIZU TAKASHI , SATO NORIYOSHI , MASE HIROSHI , URAYAMA TAKUYA
IPC分类号： H05H1/24 , B01J19/08 , C01B13/11 , H05H1/46
摘要： PROBLEM TO BE SOLVED: To provide a plasma generating electrode enabling to generate a uniform plasma by charging uniformly electric charges on a surface of a dielectric and reduce a plasma discharge starting voltage as well. SOLUTION: The plasma generating electrode is provided with at least a pair of counter electrodes 1, 1' arranged to face each other with a uniform gap each other, wherein plasma is generated between the counter electrodes 1, 1' by impressing high frequency power on these counter electrodes 1, 1'. On at least one electrode surface of the pair of the counter electrodes 1, 1', a uniformly thick dielectric layer 2 is provided, and in the dielectric layer 2, a plenty of conductive small pieces 7 are dispersed and embedded uniformly along with a face direction of the surface of the dielectric layer 2 with a gap of the size of the conductive small piece. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种能够通过在电介质的表面上均匀充电来产生均匀等离子体的等离子体产生电极，并且还降低等离子体放电起始电压。解决方案：等离子体产生电极设置有至少一对相对电极彼此间隔开的相对电极1,1'，其中等离子体在相对电极1,1'之间产生高压这些对置电极1,1'上的频率功率。在一对对置电极1,1'的至少一个电极表面上，设置均匀厚的电介质层2，并且在电介质层2中，大量的导电小片7与表面均匀分散并嵌入电介质层2的表面的方向与导电小片的尺寸的间隙。版权所有（C）2010，JPO＆INPIT

7. 发明专利

JP2005057163A Method for manufacturing semiconductor device 审中-公开
标题翻译：制造半导体器件的方法
公开(公告)号：JP2005057163A
公开(公告)日：2005-03-03
申请号：JP2003288549
申请日：2003-08-07
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： KOSHIMIZU TAKASHI , HIRANO AKITO , HORII SADAYOSHI , OGAWA UNRYU
IPC分类号： C23C16/56 , H01L21/316 , H01L29/78
摘要： PROBLEM TO BE SOLVED: To decrease the production cost of a semiconductor manufacturing apparatus to be processed and reduce the production cost of a semiconductor even if a process step for a pre-process and a post-process of a High-k film as a gate insulating film is increased.
SOLUTION: In the method for manufacturing the semiconductor device, an oxygen gas introduced into a first substrate process chamber is converted into a high frequency plasma to oxidize the surface of a processing substrate, thereby forming an oxide film. Next, the oxygen gas is switched into a nitrogen gas, and the nitrogen gas introduced into the first substrate process chamber is converted into the high frequency plasma to nitride the surface of the oxide film, thereby forming an oxynitriding film. Next, the High-k film is formed in a second substrate processing chamber by a thermal vapor growth reaction, and next, the nitrogen gas introduced into the first substrate process chamber is converted into the high frequency plasma to nitride the surface of the substrate, thereby forming a nitride film. These above steps are processed consecutively.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：为了降低要处理的半导体制造装置的生产成本，并且即使用于高k膜的预处理和后处理的处理步骤也降低了半导体的生产成本作为栅极绝缘膜增加。解决方案：在制造半导体器件的方法中，将引入第一衬底处理室的氧气转换成高频等离子体以氧化处理衬底的表面，从而形成氧化物膜。接下来，将氧气切换成氮气，将导入第一基板处理室的氮气转换为高频等离子体，使氧化膜的表面氮化，由此形成氮氧化膜。接下来，通过热蒸气生长反应在第二基板处理室中形成High-k膜，接着，将引入第一基板处理室的氮气转换成高频等离子体，从而氮化基板的表面，从而形成氮化物膜。上述步骤是连续处理的。版权所有（C）2005，JPO＆NCIPI

8. 发明专利

JP2004342797A Plasma treatment equipment 有权
公开(公告)号：JP2004342797A
公开(公告)日：2004-12-02
申请号：JP2003137018
申请日：2003-05-15
申请人： Hitachi Kokusai Electric Inc , Noriyoshi Sato , 徳芳佐藤 , 株式会社日立国際電気
发明人： KOSHIMIZU TAKASHI , SATO NORIYOSHI , OGAWA UNRYU
IPC分类号： H05H1/46 , C23C16/44 , H01L21/205
摘要： PROBLEM TO BE SOLVED: To effectively remove the charged corpuscles in a plasma applier. SOLUTION: In a plasma CVD device, the inside of a vacuum vessel is brought to a vacuum state, a gas used for treating a semiconductor is introduced and a positive voltage is applied to a conductor for an NFP collector 40. When a high-frequency power is applied to lower electrodes 32 from a high-frequency power supply 120, corpuscles are generated and charged at a negative value by electron sheaths on the lower electrodes 32. The corpuscles charged at the negative value are introduced by corpuscle induction trenches 320-1 to 320-8, induced by the conductor for the collector 40, and removed from the upper sections of the lower electrodes 32. COPYRIGHT: (C)2005,JPO&NCIPI

9. 发明专利

JP2004228102A Plasma treatment apparatus 审中-公开
公开(公告)号：JP2004228102A
公开(公告)日：2004-08-12
申请号：JP2003003274
申请日：2003-01-09
申请人： Hitachi Kokusai Electric Inc , Noriyoshi Sato , 徳芳佐藤 , 株式会社日立国際電気
发明人： KOSHIMIZU TAKASHI , SATO NORIYOSHI , OGAWA UNRYU
IPC分类号： H05H1/46 , B01J19/08 , C23C16/44 , H01L21/205 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To enable charged particulates to be effectively removed in a plasma applied apparatus. SOLUTION: The inside of a vacuum vessel is kept vacuum in a plasma CVD apparatus, gas is introduced into the vacuum vessel for treating semiconductors, and a positive voltage is applied to the conductor of an NFP collector. When a high-frequency power is applied from a high-frequency power source 120 to a lower electrode 32, particulates are generated and charged with negative static electricity through an electron sheath over the lower electrode 32. The particulates charged with negative static electricity are guided by particulate guide grooves 320-1 to 320-8 and furthermore attracted to the conductor of the NFP collector 40 so as to be removed from above the lower electrode 32. COPYRIGHT: (C)2004,JPO&NCIPI

10. 发明专利

JP2008311555A Substrate treatment device 审中-公开
标题翻译：基板处理装置
公开(公告)号：JP2008311555A
公开(公告)日：2008-12-25
申请号：JP2007159917
申请日：2007-06-18
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： KOSHIMIZU TAKASHI , TOYODA KAZUYUKI , ITO TAKESHI
IPC分类号： H01L21/205 , C23C16/458 , H01L21/3065 , H01L21/31
摘要： PROBLEM TO BE SOLVED: To provide a substrate treatment device which enables a substrate to be uniformly treated regardless of the presence or absence of a thin film on a wafer, a thin film type and a thickness of the thin film.
SOLUTION: In this batch-type plasma treatment device, a plurality of stages of susceptor electrodes 50 are arranged in a treatment chamber 32 at prescribed intervals, high-frequency power is supplied by an AC source 61 to each stage of the susceptor electrode 50 for generating plasma 60, and the wafer 1 placed on each stage of the susceptor electrode 50 is subjected to plasma treatment. A silicon oxide film 51 of about 10,000 Å in thickness is formed on the surface of each stage of the susceptor electrode 50. It is possible to equalize film deposition rates between batches and in in-plane film thickness distributions since the plasma of the susceptor electrode 50 can be uniformly generated regardless of the presence or absence of a thin film on a wafer and the type and thickness of the thin film.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种能够使基板均匀地进行处理的基板处理装置，而不管晶片上存在或不存在薄膜，薄膜型和薄膜的厚度。解决方案：在这种间歇式等离子体处理装置中，多个阶段的基座电极50以规定的间隔布置在处理室32中，高频功率由AC源61提供给基座的每一级用于产生等离子体60的电极50和放置在基座电极50的每个级上的晶片1进行等离子体处理。在基座电极50的每个阶段的表面上形成厚度约为的氧化硅膜51.可以使基体电极的等离子体之间的批次之间的膜沉积速率和面内的膜厚度分布相等可以均匀地生成50，而不管晶片上存在或不存在薄膜以及薄膜的类型和厚度。版权所有（C）2009，JPO＆INPIT

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