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1. 发明专利

JP2005071775A Absorption current image observation apparatus in electron microscope 有权
标题翻译：电子显微镜中的吸收电流图像观察装置
公开(公告)号：JP2005071775A
公开(公告)日：2005-03-17
申请号：JP2003299477
申请日：2003-08-25
申请人： Hitachi High-Technologies Corp , Hitachi Ltd , 株式会社日立ハイテクノロジーズ , 株式会社日立製作所
发明人： OSHIMA TAKU , MAKINO HIROSHI , TOYAMA HIROSHI , SHINADA HIROYUKI
IPC分类号： G01N23/225 , G01Q30/02 , H01J37/04 , H01J37/244 , H01J37/28
CPC分类号： H01J37/244 , H01J37/28 , H01J2237/2605
摘要： PROBLEM TO BE SOLVED: To solve a problem wherein it is hard for conventional SEMs to take measurements at a high speed and take accurate measurements through an insulator because the conventional SEMs uses a continuous electron beam, and it is impossible to apply voltage to the sample during the measurement of current.
SOLUTION: In this absorption current image observation apparatus in an electron microscope, by pulse-modulating the electron beam and extracting a high-frequency signal component from the sample, electrons absorbed in the sample can be detected at a high speed and with precision. Thereby, precise and high-speed absorption current measurements can be achieved. In addition, a high-functionality inspection apparatus can be provided.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：为了解决传统SEM难以高速进行测量并通过绝缘体进行精确测量的问题，因为常规SEM使用连续电子束，并且不可能施加电压在测量电流时对样品。解决方案：在该电子显微镜的吸收电流图像观察装置中，通过脉冲调制电子束并从样品中提取高频信号成分，能够以高速和精确。因此，可以实现精确和高速吸收电流测量。此外，可以提供高功能性的检查装置。版权所有（C）2005，JPO＆NCIPI

2. 发明专利

JP2005292157A Wafer defect inspecting method and wafer defect inspecting apparatus 审中-公开
标题翻译：波形缺陷检测方法和波形缺陷检测装置
公开(公告)号：JP2005292157A
公开(公告)日：2005-10-20
申请号：JP2005163438
申请日：2005-06-03
申请人： Hitachi High-Technologies Corp , 株式会社日立ハイテクノロジーズ
发明人： MURAKOSHI HISAYA , SHINADA HIROYUKI , TODOKORO HIDEO , MAKINO HIROSHI , ANAMI YOSHIHIRO
IPC分类号： G01N23/225 , G01N23/20 , H01J37/28 , H01J37/29 , H01L21/66
摘要： PROBLEM TO BE SOLVED: To provide a defect inspecting apparatus which realizes high resolution and high inspection speed in a technology for inspecting defects, foreign substances, residues and steps in patterns on a wafer in a manufacturing process of a semiconductor device by using an electron beam. SOLUTION: An electric field is formed on a surface of an inspected semiconductor 7, and decelerates the electron beam. The electron beam (the planar electron beam) including an energy component incapable of reaching the surface of the inspected semiconductor by the deceleration electric field and having a constant area, is reflected in the vicinity of the surface of the inspected semiconductor and imaged by an imaging lens 11. Images of a plurality of regions on the surface of the inspected semiconductor are acquired, and stored in an image storage. The existence and locations of the defects in the regions are measured by comparing the stored image of a plurality of the regions. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种在半导体器件的制造过程中通过使用在半导体器件的制造过程中检查晶片上的缺陷，异物，残留物和步骤的技术中实现高分辨率和高检测速度的缺陷检查装置电子束。解决方案：在被检测半导体7的表面上形成电场，并使电子束减速。包括不能通过减速电场到达被检测半导体的表面并具有恒定面积的能量分量的电子束（平面电子束）被反射在被检查的半导体的表面附近，并通过成像获取被检查半导体表面上的多个区域的图像，并将其存储在图像存储器中。通过比较存储的多个区域的图像来测量区域中的缺陷的存在和位置。版权所有（C）2006，JPO＆NCIPI

3. 发明专利

JP2005129546A Method and apparatus for inspecting pattern defect 审中-公开
标题翻译：检查图形缺陷的方法和装置
公开(公告)号：JP2005129546A
公开(公告)日：2005-05-19
申请号：JP2005001990
申请日：2005-01-07
申请人： Hitachi High-Technologies Corp , 株式会社日立ハイテクノロジーズ
发明人： SHINADA HIROYUKI , MURAKOSHI HISAYA , TODOKORO HIDEO , MAKINO HIROSHI , ANAMI YOSHIHIRO
IPC分类号： H01L21/66 , H01J37/22 , H01J37/29
摘要： PROBLEM TO BE SOLVED: To provide a high-resolution and high-speed defect inspection apparatus for inspecting the defect of a pattern on a wafer, foreign particles, residues, steps or the like by an electron beam in a process for manufacturing a semiconductor device. SOLUTION: The defect inspection apparatus is constructed as to store images of a plurality of areas of a semiconductor surface to be inspected by forming images by a image forming lens 11 by reflecting an electron beam (a planar electron beam) at the near surface of a semiconductor to be inspected. The electron beam contains an energy component that can not reach the surface of the semiconductor to be inspected caused by a decelerating electronic field formed for decelerating the electron beam on the surface of the semiconductor 7 to be inspected. The defect inspection apparatus is constituted to detect the presence or absence of defects and positions of the defects in the area by comparing stored images in the plurality of areas. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种用于在制造过程中通过电子束检查晶片上的图案的缺陷，异物，残留物，步骤等的高分辨率和高速缺陷检查装置半导体器件。解决方案：缺陷检查装置被构造为通过在近处反射电子束（平面电子束），通过由成像透镜11形成图像来存储要检查的半导体表面的多个区域的图像要检查的半导体的表面。电子束包含能量分量，该能量成分不能到达要被检查的半导体的表面，这是由形成为用于使待检查的半导体7的表面上的电子束减速的减速电子场引起的。缺陷检查装置被构成为通过比较多个区域中存储的图像来检测区域中缺陷的存在或不存在以及缺陷的位置。版权所有（C）2005，JPO＆NCIPI

4. 发明专利

JP2005019258A Inspection device using electron beam 审中-公开
标题翻译：使用电子束的检查装置
公开(公告)号：JP2005019258A
公开(公告)日：2005-01-20
申请号：JP2003183713
申请日：2003-06-27
申请人： Hitachi High-Technologies Corp , 株式会社日立ハイテクノロジーズ
发明人： SASAKI HIROKO , KASAI YUJI , TANIMOTO NORIFUMI , SHINADA HIROYUKI , MAKINO HIROSHI , TAKATO ATSUKO
IPC分类号： G03F1/84 , H01J37/141 , H01J37/244 , H01J37/28 , H01L21/027 , H01L21/66 , G03F1/08
摘要： PROBLEM TO BE SOLVED: To provide an inspection device using an electron beam and capable of providing a stable inspection result by preventing degradation of inspection sensitivity by efficiently detecting an information signal.
SOLUTION: This inspection device is used for detecting a defect of a sample by generating an image from an information signal obtained by irradiating the sample with an electron beam. The inspection device is equipped with a lens control means for controlling excitation of a focusing lens and an objective lens so as to increase or decrease it when a negative voltage of a retarding voltage applied to the sample in order to decelerate the electron beam immediately before the sample is increased to the positive side or the negative side.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种使用电子束的检查装置，并且能够通过有效地检测信息信号来防止检查灵敏度的降低而提供稳定的检查结果。解决方案：该检查装置用于通过从通过用电子束照射样品获得的信息信号产生图像来检测样品的缺陷。检查装置配备有用于控制聚焦透镜和物镜的激发的透镜控制装置，以便在施加到样品的延迟电压的负电压时增加或减小其，以便在紧接在样品前的电子束样品增加到正侧或负面。版权所有（C）2005，JPO＆NCIPI

5. 发明专利

JP2004014207A Inspection device of semiconductor circuit pattern 有权
公开(公告)号：JP2004014207A
公开(公告)日：2004-01-15
申请号：JP2002163701
申请日：2002-06-05
申请人： Hitachi High-Technologies Corp , 株式会社日立ハイテクノロジーズ
发明人： SHINADA HIROYUKI , MURAKOSHI HISAYA , TAKATO ATSUKO , ANAMI YOSHIHIRO , TANIMOTO NORIFUMI
IPC分类号： H01L21/66 , H01J37/06 , H01J37/09 , H01J37/22 , H01J37/28
摘要： PROBLEM TO BE SOLVED: To make an inspection device detect defects with higher sensitivity without preparing a plurality of electron sources, where the inspection device detects the defects in circuit patterns for a semiconductor device on a wafer during a manufacturing process of the semiconductor device by using potential contrast.
SOLUTION: An aperture for controlling an electron beam current has one or a plurality of holes other than a hole at a center of an optical axis on the periphery of the hole at the center so that spherical aberration of an objective lens forces electron beams passing through the holes to land at places a little distant from landing point of the electron beam coming from the hole at the center.
COPYRIGHT: (C)2004,JPO

6. 发明专利

JP2015043334A 走査型電子顕微鏡及び試料観察方法有权
标题翻译：扫描电子显微镜和样品观察方法
公开(公告)号：JP2015043334A
公开(公告)日：2015-03-05
申请号：JP2014216829
申请日：2014-10-24
申请人：株式会社日立ハイテクノロジーズ , Hitachi High-Technologies Corp
发明人： TEI TOMOKI , KOYAMA HIKARI , KIMURA YOSHINOBU , SHINADA HIROYUKI , KOMURO OSAMU
IPC分类号： H01J37/147 , H01J37/20 , H01J37/22 , H01J37/24 , H01J37/28
CPC分类号： H01J37/28 , H01J2237/2803
摘要：【課題】走査型電子顕微鏡を用いた観察において、一次荷電粒子線照射起因帯電の影響を抑制し、二次電子の検出率を向上させることで二次元パターンの輪郭のコントラストを向上させると共にシェーディングを抑制できる好適な走査装置及び方法を提供する。【解決手段】GUIと、試料に関する情報を入力する試料情報入力手段と、該試料情報入力手段により入力することによって推奨走査条件が前記GUIに表示する表示手段と、該推奨走査条件を選択することによって前記試料に応じた走査線密度で走査することを特徴とする走査型電子顕微鏡。【選択図】図5
摘要翻译：要解决的问题：为了提供合适的扫描装置和方法，其抑制由于一次带电粒子束的照射引起的充电的影响，在使用扫描电子显微镜的观察中，增强了二维图案的轮廓的对比度同时通过提高二次电子的检测率来抑制阴影。解决方案：扫描电子显微镜包括GUI，用于输入关于样本的信息的样本信息输入装置和用于通过从GUI输入来显示推荐的扫描条件的显示装置样本信息输入装置。通过选择推荐的扫描条件，根据样品扫描线密度进行扫描。

7. 发明专利

JP2007280614A Reflection image forming electron microscope and defect inspecting device using it 审中-公开
标题翻译：使用它的反射图像形成电子显微镜和缺陷检查装置
公开(公告)号：JP2007280614A
公开(公告)日：2007-10-25
申请号：JP2006101468
申请日：2006-04-03
申请人： Hitachi High-Technologies Corp , 株式会社日立ハイテクノロジーズ
发明人： MURAKOSHI HISAYA , TODOKORO HIDEO , SHINADA HIROYUKI , HASEGAWA MASAKI , MARUYAMA MOMOYO
IPC分类号： H01J37/29 , H01L21/66
摘要： PROBLEM TO BE SOLVED: To provide a defect inspecting technology capable of observing or inspecting a sample by distinguishing a contrast resulting from a shape from another contrast resulting from a potential condition.
SOLUTION: In this reflection image forming electron microscope, a defect inspecting device has a preliminary charge control device 40 to control electrostatic charge of a sample surface by charging the sample surface by irradiation of a planar electron beam, and a means to separate the contrast resulting from the shape defect of the sample from another contrast resulting from a potential defect from a mirror electron image obtained, by structuring it so as to control the potential of the sample depending on the kinds of objective defect of the sample.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供能够通过区分来自形状的对比度与由潜在条件引起的另一个对比度来观察或检查样本的缺陷检查技术。解决方案：在该反射成像电子显微镜中，缺陷检查装置具有初步充电控制装置40，用于通过平面电子束的照射对样品表面进行充电来控制样品表面的静电电荷，以及分离装置由来自由所获得的镜电子图像的潜在缺陷产生的另一对比度的样品的形状缺陷产生的对比度，通过构造它来根据样品的目标缺陷的种类来控制样品的电位。版权所有（C）2008，JPO＆INPIT

8. 发明专利

JP2005083948A Inspection device, inspection method and process management method 审中-公开
标题翻译：检验设备，检验方法和过程管理方法
公开(公告)号：JP2005083948A
公开(公告)日：2005-03-31
申请号：JP2003317700
申请日：2003-09-10
申请人： Hitachi High-Technologies Corp , 株式会社日立ハイテクノロジーズ
发明人： MAKINO HIROSHI , MURAKOSHI HISAYA , SHINADA HIROYUKI , TODOKORO HIDEO
IPC分类号： G01B15/00 , G01B15/08 , G01N23/04 , G01N23/225 , H01J37/21 , H01J37/22 , H01J37/29 , H01L21/66
CPC分类号： H01J37/292 , G01N23/04 , H01J2237/2817
摘要： PROBLEM TO BE SOLVED: To provide a mirror projection type inspection device capable of detecting simultaneously various kinds of defects.
SOLUTION: A plurality of images having different foci are acquired in the same inspection region. The acquisition can be realized by providing a plurality of detectors, and changing each height relatively. Another means can be realized by acquiring images by changing stepwise the focus in an imaging optical system. A plurality of detectors are provided and each height is changed relatively, and thereby the images having different foci are acquired simultaneously. In another method, the images having different foci are acquired by changing stepwise a lens in the imaging optical system relative to the image in the same inspection region. The various kinds of defects can be detected by acquiring the plurality of images having different foci.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供能够同时检测各种缺陷的镜面投影型检查装置。解决方案：在相同的检查区域中获取具有不同焦点的多个图像。可以通过提供多个检测器并且相对地改变每个高度来实现获取。可以通过在成像光学系统中逐步改变焦点来获取图像来实现另一种手段。提供多个检测器并且相对地改变每个高度，由此同时获取具有不同焦点的图像。在另一种方法中，通过相对于相同检查区域中的图像逐步改变成像光学系统中的透镜来获取具有不同焦点的图像。可以通过获取具有不同焦点的多个图像来检测各种缺陷。版权所有（C）2005，JPO＆NCIPI

9. 发明专利

JP2004340650A Circuit pattern inspection device 有权
公开(公告)号：JP2004340650A
公开(公告)日：2004-12-02
申请号：JP2003135261
申请日：2003-05-14
申请人： Hitachi High-Technologies Corp , 株式会社日立ハイテクノロジーズ
发明人： NARA YASUHIKO , NOJIRI MASAAKI , HAYAKAWA KOICHI , SHINADA HIROYUKI , HAGITA YUKIO
IPC分类号： G01N23/225 , G01R31/302 , H01J37/28 , H01L21/66
CPC分类号： H01J37/28 , H01J2237/004 , H01J2237/2817
摘要： PROBLEM TO BE SOLVED: To provide a highly reliable circuit pattern inspection device using an electron beam for arbitrarily controlling the electrified state of a substrate under inspection. SOLUTION: In this circuit pattern inspection device, an electron beam is radiated to the surface of the substrate having a plurality of chips on each of which a circuit pattern is formed, signals generated from the substrate by the irradiation are detected and imaged, and the image is compared with another image to detect defects on the circuit patterns. A condition setting means is provided for setting inspection conditions so that an electron beams is previously radiated to an irradiation area prior to radiating the electron beam to a chip or a plurality of chips to acquire an image for inspection. COPYRIGHT: (C)2005,JPO&NCIPI

10. 发明专利

JP2007207688A Mirror electron microscope, and inspection device using mirror electron microscope 审中-公开
标题翻译：镜面电子显微镜和使用镜面电子显微镜的检查装置
公开(公告)号：JP2007207688A
公开(公告)日：2007-08-16
申请号：JP2006027850
申请日：2006-02-06
申请人： Hitachi High-Technologies Corp , 株式会社日立ハイテクノロジーズ
发明人： MURAKOSHI HISAYA , TODOKORO HIDEO , SHINADA HIROYUKI , HASEGAWA MASAKI , MARUYAMA MOMOYO
IPC分类号： H01J37/29 , G01N23/225 , H01J37/05 , H01J37/153 , H01L21/66
CPC分类号： H01J37/29 , H01J2237/057 , H01J2237/1508 , H01J2237/24592 , H01J2237/2538 , H01J2237/2817
摘要： PROBLEM TO BE SOLVED: To provide a defect inspection device for detecting a defect part of a pattern formed on a wafer at high speed and at high precision, and by means of acquiring a stable mirror electron image and by solving problems that images obtained by a mirror electron microscope would tend to reflect shapes of equi-potential surface to reflect the mirror electron, and that image interpretation would become complicated, while a general electron microscope image reflects shapes and materials of a sample.
SOLUTION: According to a structure of a pattern to be measured or an object of an interesting defect, following means of controlling the reflecting face of the mirror electron are installed. (1) According to kinds of an electron source, operating conditions, and kinds of patterns on the sample 7 to be measured, a means to control an electric potential difference between the electron source 1 corresponding to a height of the reflecting face of the mirror electron beam and the sample 7 is installed. (2) A means to control an energy distribution of the irradiation electron beam is installed by arranging an energy filter 9 at an irradiation system. Testing by distinguishing sizes and electric potentials of the patterns becomes possible, and an insulation material sample can be observed at a high resolution.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于以高速和高精度检测在晶片上形成的图案的缺陷部分的缺陷检查装置，并且通过获得稳定的镜像电子图像并且通过解决图像的问题通过镜电子显微镜获得的倾向将反映等电位表面的形状以反射镜电子，并且图像解释将变得复杂，而通常的电子显微镜图像反映样品的形状和材料。解决方案：根据要测量的图案的结构或感兴趣的缺陷的对象，安装控制镜电子的反射面的后续装置。（1）根据电子源的种类，要测量的样品7上的图案的工作条件和种类，控制与反射镜的反射面的高度相对应的电子源1之间的电位差的手段电子束和样品7安装。（2）通过在照射系统上配置能量过滤器9来安装控制照射电子束的能量分布的手段。通过区分图案的尺寸和电位进行测试成为可能，并且可以以高分辨率观察绝缘材料样品。版权所有（C）2007，JPO＆INPIT

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