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1. 发明专利

JP2006114676A Plasma processing apparatus 审中-公开
标题翻译：等离子体加工设备
公开(公告)号：JP2006114676A
公开(公告)日：2006-04-27
申请号：JP2004300130
申请日：2004-10-14
申请人： Hitachi High-Technologies Corp , 株式会社日立ハイテクノロジーズ
发明人： TAKEI HIDENORI , YAGI KATSUJI , MATSUMOTO TAKESHI , MUTO SATORU
IPC分类号： H01L21/3065 , H05H1/46
摘要： PROBLEM TO BE SOLVED: To provide a plasma processing apparatus with which the effects on the shape of a sample-carrying port on plasma can be reduced through a simple arrangement. SOLUTION: The plasma processing apparatus comprises a vacuum processing chamber 6 having a port 14 for carrying in or carrying out a substrate being processed; a means 7 for supplying processing gas into the vacuum processing chamber 6; means 4, 8 for generating plasma by supplying high frequency energy to processing gas supplied into the vacuum processing chamber, a lower electrode 10 held movably in the vertical directions in the vacuum processing chamber and holding the substrate being processed, while mounting in the vacuum processing chamber; a tubular carrying port shut-off wall 16 covering the inner circumference of the vacuum processing chamber slidably including the opening of the carrying port; and a portion 17 for coupling the lower electrode and the carrying port shut off wall, wherein the opening of the carrying port 14 is shut off by the carrying port shut off wall 16, when the lower electrode 10 ascends to the operating position of the processing device. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种等离子体处理装置，其通过简单的布置可以降低对等离子体上的采样端口的形状的影响。解决方案：等离子体处理装置包括具有端口14的真空处理室6，用于承载或执行被处理的基板; 用于将处理气体供应到真空处理室6中的装置7; 用于通过向处理供应到真空处理室的处理气体供应高频能量来产生等离子体的装置4,8;在真空处理室中沿垂直方向可移动地保持的下电极10，并且在真空处理中安装室; 覆盖真空处理室的内圆周的可滑动地包括承载口的开口的管状承载口关闭壁16; 以及用于联接下电极和承载口切断壁的部分17，其中当下电极10上升到加工的操作位置时，承载口14的开口被输送口关闭壁16切断设备。版权所有（C）2006，JPO＆NCIPI

2. 发明专利

JP2014204050A プラズマ処理方法およびプラズマ処理装置有权
标题翻译：等离子体处理方法和等离子体处理装置
公开(公告)号：JP2014204050A
公开(公告)日：2014-10-27
申请号：JP2013080901
申请日：2013-04-09
申请人：株式会社日立ハイテクノロジーズ , Hitachi High-Technologies Corp
发明人： MUTO SATORU , ONO TETSUO , OGOSHI YASUO , EITOKU HIROFUMI
IPC分类号： H01L21/3065
CPC分类号： H01J37/32137 , H01J37/32082 , H01J37/32146 , H01J37/32165 , H01J37/32532 , H01J37/32715 , H01J2237/334 , H01L21/3065 , H01L21/31116 , H01L21/32137 , H01L21/67069 , H01L29/66795
摘要：【課題】本発明は、プラズマ処理時間の経過とともに漸次的にプラズマの解離状態を変化させることにより所望のプラズマ処理を行うことができるプラズマ処理方法およびプラズマ処理装置を提供する。【解決手段】本発明は、試料をプラズマ処理するプラズマ処理室と、プラズマ生成用の第一の高周波電力を供給する第一の高周波電源と、前記試料を載置する試料台に第二の高周波電力を供給する第二の高周波電源とを備えるプラズマ処理装置を用いるプラズマ処理方法において、前記第一の高周波電力を第一のパルスにより変調し、前記第一のパルスのデューティー比をプラズマ処理時間の経過とともに漸次的に制御することによってプラズマの解離状態を所望の解離状態に制御することを特徴とする。【選択図】図3
摘要翻译：要解决的问题：提供一种等离子体处理方法和等离子体处理装置，其通过随着等离子体处理时间的逐渐逐渐改变等离子体的解离状态而允许期望的等离子体处理。解决方案：使用等离子体处理方法等离子体处理装置，其包括进行样品的等离子体处理的等离子体处理室，供给用于等离子体产生的第一高频电力的第一高频电源和向样品台供给第二高频电力的第二高频电源，其上的样品，通过用第一脉冲调制第一高频功率来等离子体的解离状态被控制到期望的解离状态，并且随着等离子体处理时间的逐渐逐渐控制第一脉冲的占空比。

3. 发明专利

JP2008243939A Plasma etching method 有权
标题翻译：等离子体蚀刻法
公开(公告)号：JP2008243939A
公开(公告)日：2008-10-09
申请号：JP2007079170
申请日：2007-03-26
申请人： Hitachi High-Technologies Corp , 株式会社日立ハイテクノロジーズ
发明人： MUTO SATORU , IKEGAMI EIJI , MIYAJI MASAKAZU
IPC分类号： H01L21/3065 , H01L21/3205 , H01L21/768 , H01L23/52 , H05H1/46
摘要： PROBLEM TO BE SOLVED: To consistently perform a plurality of processes of a multilayer resist structure in the same chamber without carrying out a substrate to be processed in a forming process of a Via or a Trench of the multilayer resist structure constituted of ArF resist, an inorganic film interlayer, an organic film lower layer resist, a silicon oxide film and an inorganic film, which are arranged on a Si substrate. SOLUTION: In Via etching processing, the organic film lower layer resist is processed without using CF system gas and without applying high-frequency bias to a gas supply board formed of a Si member from a second high-frequency power supply. The silicon oxide film and the inorganic film are processed by making high-frequency bias power from 200 W to 300 W by using CF system gas. In Trench etching processing, the organic film lower layer resist is processed without using CF system gas and without applying high-frequency bias to the gas supply board 8 formed of the Si member from the second high-frequency power supply 5. The silicon oxide film and the inorganic film are processed by using CF system gas and without applying high-frequency bias. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：为了在由ArF构成的多层抗蚀剂结构体的Via或者沟槽的形成工序中，在不进行被处理基板的情况下，在同一室内一贯地进行多层抗蚀剂结构体的多个处理抗蚀剂，无机膜中间层，有机膜下层抗蚀剂，氧化硅膜和无机膜。解决方案：在Via蚀刻处理中，有机膜下层抗蚀剂在不使用CF系统气体的情况下进行处理，并且不对来自第二高频电源的由Si构成的气体供给板施加高频偏压。通过使用CF系统气体从200W至300W的高频偏置功率来处理氧化硅膜和无机膜。在沟槽蚀刻处理中，有机膜下层抗蚀剂在不使用CF系统气体的情况下进行处理，并且不对来自第二高频电源5的由Si构件形成的气体供给板8施加高频偏压。氧化硅膜无机膜采用CF系统气体处理，不施加高频偏压。版权所有（C）2009，JPO＆INPIT

4. 发明专利

JP2012243958A Plasma processing method 审中-公开
标题翻译：等离子体处理方法
公开(公告)号：JP2012243958A
公开(公告)日：2012-12-10
申请号：JP2011112764
申请日：2011-05-19
申请人： Hitachi High-Technologies Corp , 株式会社日立ハイテクノロジーズ
发明人： MUTO SATORU , OYAMA MASATOSHI , OTA YOSHIYUKI
IPC分类号： H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide a plasma processing method which performs plasma cleaning in an etching processing chamber where a wafer including a film of a metallic compound containing titanium by using a gas containing fluorine is etched.SOLUTION: A wafer 102 including a film of a metallic compound containing titanium is placed on a sample stand 103 in an etching processing chamber 101, and a gas containing fluorine is introduced from a gas introduction part 104 to perform etching processing. Then plasma cleaning of removing fluoride titanium-based reaction products accumulated in the etching processing chamber 101 is performed by using a mixed gas of a Clgas and a CHFgas or a mixed gas of the Clgas, the CHFgas, and Si.
摘要翻译：要解决的问题：提供一种在蚀刻处理室中进行等离子体清洗的等离子体处理方法，其中蚀刻含有含氟气体的含钛金属化合物的膜的晶片。解决方案：包括含有钛的金属化合物的膜的晶片102被放置在蚀刻处理室101中的样品台103上，并且从气体引入部104引入含氟气体进行蚀刻处理。然后，通过使用Cl 2 气体和CHF 3 气体，Si 。版权所有（C）2013，JPO＆INPIT

5. 发明专利

JP2011187516A Plasma etching method 有权
标题翻译：等离子体蚀刻法
公开(公告)号：JP2011187516A
公开(公告)日：2011-09-22
申请号：JP2010048559
申请日：2010-03-05
申请人： Hitachi High-Technologies Corp , 株式会社日立ハイテクノロジーズ
发明人： MUTO SATORU , OYAMA MASATOSHI , MATSUMOTO TAKESHI , OTA YOSHIYUKI , ADACHI JUNJI , TANAKA JUNYA
IPC分类号： H01L21/3205 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To solve such a problem that the etching of a stopper film does not proceed in etching a bottom of a hole after the etching of a Low-K film in a dual damascene-structure Via-process in a conventional technology.
SOLUTION: A method of making a via of a dual damascene process in the dual damascene process for plasma etching includes a first step of etching an anti-reflection film using a via-patterned upper layer resist film as a mask, a second step of etching a lower layer resist film using the upper layer resist film and the anti-reflection film as masks, a third step of etching the Low-K film using the lower layer resist film as the mask, a fourth step of performing plasma treatment before etching the stopper film, and a fifth step of etching the stopper film.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题为了解决在双镶嵌结构通过工艺中的Low-K膜的蚀刻之后，在蚀刻蚀刻底部的孔时，阻挡膜的蚀刻不会进行的问题常规技术。解决方案：在用于等离子体蚀刻的双镶嵌工艺中制备双镶嵌工艺的通孔的方法包括：使用通孔图案的上层抗蚀剂膜作为掩模蚀刻抗反射膜的第一步骤，第二步使用上层抗蚀剂膜和抗反射膜作为掩模蚀刻下层抗蚀剂膜的步骤;使用下层抗蚀剂膜作为掩模蚀刻Low-K膜的第三步骤;进行等离子体处理的第四步骤在蚀刻止动膜之前，以及蚀刻止动膜的第五步骤。版权所有（C）2011，JPO＆INPIT

6. 发明专利

JP2009152304A Plasma processing apparatus 有权
标题翻译：等离子体加工设备
公开(公告)号：JP2009152304A
公开(公告)日：2009-07-09
申请号：JP2007327596
申请日：2007-12-19
申请人： Hitachi High-Technologies Corp , 株式会社日立ハイテクノロジーズ
发明人： USUI TAKETO , YOSHIDA TAKESHI , MATSUMOTO TAKESHI , MUTO SATORU , YOKOGAWA KATANOBU
IPC分类号： H01L21/3065
CPC分类号： H01J37/32972 , G01N21/68 , H01J37/32091 , H01J37/32935
摘要： PROBLEM TO BE SOLVED: To provide a plasma processing apparatus for measuring the etching quantity of the material being processed and detecting the end point of etching using optical interference on the surface of a sample being processed, so as to simultaneously achieve long life and ensuring of sufficient light to be received of a light introduction section, to enable long term stable operation and to improve the processing accuracy by accurate etching quantity detection. SOLUTION: In the plasma processing apparatus for processing a sample being processed by generating plasma between a shower plate and a lower electrode, a detector for detecting light from a surface of the sample being processed via the shower plate includes a light introduction section composed of a light guide into which light is entered and a spectroscope for analyzing the light obtained at the light introduction section, wherein the end surface of the light introduction section through which light is entered is arranged at a distance of five times or more the mean free path of gas molecules in the vacuum vessel from the end surface of the shower plate facing the plasma. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于测量被处理材料的蚀刻量的等离子体处理装置，并且在被加工样品的表面上使用光学干涉检测蚀刻终点，以同时实现长寿命并且确保能够接收到光引入部分的足够的光，以使得能够进行长期稳定的操作并且通过精确的蚀刻量检测来提高处理精度。解决方案：在用于处理通过在淋浴板和下电极之间产生等离子体而被处理的样品的等离子体处理装置中，用于检测来自通过淋浴板处理的样品的表面的光的检测器包括光引入部分由入射光的光导和用于分析在光引入部获得的光的分光镜构成，其中进入光的光导入部的端面配置在平均值的5倍以上的距离从喷淋板的面向等离子体的端面的真空容器中的气体分子的自由路径。版权所有（C）2009，JPO＆INPIT

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