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1. 发明专利

JP2014131086A Plasma processing method 审中-公开
标题翻译：等离子体处理方法
公开(公告)号：JP2014131086A
公开(公告)日：2014-07-10
申请号：JP2014081175
申请日：2014-04-10
申请人： Hitachi High-Technologies Corp , 株式会社日立ハイテクノロジーズ
发明人： ONO TETSUO , SAITO TSUYOSHI
IPC分类号： H01L21/3065
摘要： PROBLEM TO BE SOLVED: To perform microprocessing in a semiconductor having a structure formed by depositing a metal conductor for controlling work-function on a high dielectric constant insulating film, without degrading an element.SOLUTION: In a plasma processing method, a conductive film 103 containing Ti, Ta or Ru formed above an insulating film 102 containing Hf or Zr is subjected to plasma etching by using a resist 107 that is preliminarily patterned into a dimension of 65 nm or smaller. After the conductive film 103 is subjected to the plasma etching, the resist 107 is removed by plasma using Hgas 108 while supplying a bias power to a semiconductor substrate 101 having the conductor film 103.
摘要翻译：要解决的问题：在具有通过在高介电常数绝缘膜上沉积用于控制功函数的金属导体形成的结构的半导体中进行微处理而不降低元素。解决方案：在等离子体处理方法中，导电膜103 通过使用预先图案化为65nm以下的尺寸的抗蚀剂107，对包含Hf或Zr的绝缘膜102上方形成的含有Ti，Ta或Ru进行等离子体蚀刻。在对导电膜103进行等离子体蚀刻之后，通过使用Hgas 108的等离子体去除抗蚀剂107，同时向具有导体膜103的半导体衬底101提供偏置功率。

2. 发明专利

JP2014082338A Plasma processing device and plasma processing method 审中-公开
标题翻译：等离子体处理装置和等离子体处理方法
公开(公告)号：JP2014082338A
公开(公告)日：2014-05-08
申请号：JP2012229413
申请日：2012-10-17
申请人： Hitachi High-Technologies Corp , 株式会社日立ハイテクノロジーズ
发明人： INOUE YOSHIHARU , ONO TETSUO
IPC分类号： H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide a plasma processing device and a plasma processing method in which highly accurate final determination of dry etching using plasma emission is performed.SOLUTION: A plasma processing device includes: a processing chamber in which a sample is processed by plasma; plasma generation means in which plasma is generated in the processing chamber; a sample table on which the sample is placed; and a high frequency power source which supplies a high frequency power to the sample table. The plasma processing device further includes a detector which extracts from plasma emission, a light-emitting component having the same frequency as a frequency when light emission of a reaction product is periodically changed in a period of not less than staying time of the reaction product.
摘要翻译：要解决的问题：提供一种等离子体处理装置和等离子体处理方法，其中进行使用等离子体发射的干蚀刻的高精度最终确定。解决方案：等离子体处理装置包括：处理室，其中样品由等离子体 ; 在处理室中产生等离子体的等离子体产生装置; 放置样品的样品台; 以及向样品台提供高频电力的高频电源。等离子体处理装置还包括从等离子体发射中提取的检测器，在反应产物的停留时间不小于周期性地改变反应产物的光发射时，具有与频率相同频率的发光部件。

3. 发明专利

JP2014044976A Plasma processing apparatus and plasma processing method 有权
标题翻译：等离子体加工设备和等离子体处理方法
公开(公告)号：JP2014044976A
公开(公告)日：2014-03-13
申请号：JP2012184847
申请日：2012-08-24
申请人： Hitachi High-Technologies Corp , 株式会社日立ハイテクノロジーズ
发明人： MORIMOTO MICHIKAZU , OGOSHI YASUO , OHIRAHARA YUZO , ONO TETSUO
IPC分类号： H01L21/3065
CPC分类号： H01L21/67069 , H01J37/32082 , H01J37/32165 , H01J37/32192 , H01J37/32302 , H01J37/32706 , H01J37/32715 , H01J2237/334 , H01L21/3065 , H01L21/31116 , H01L21/32137
摘要： PROBLEM TO BE SOLVED: To provide a plasma processing apparatus having a high-frequency power supply supplying a time-modulated high-frequency power that can be controlled in a wide range and with high accuracy, and to provide a plasma processing method using the plasma processing apparatus.SOLUTION: A plasma processing apparatus comprises: a vacuum container; a first high-frequency power supply for generating a plasma in the vacuum container; a sample table arranged in the vacuum container and provided for mounting a sample; and a second high-frequency power supply supplying a high-frequency power to the sample table. In the plasma processing apparatus, at least any one of the first high-frequency power supply and the second high-frequency power supply supplies a time-modulated high-frequency power, and one of parameters for controlling the time modulation has two or more different control ranges, and one of the control ranges is provided for performing high accuracy control.
摘要翻译：要解决的问题：提供一种具有高频电源的等离子体处理装置，其提供可以在宽范围内并且以高精度控制的时间调制的高频功率，并且提供使用等离子体的等离子体处理方法处理装置。解决方案：等离子体处理装置包括：真空容器; 用于在所述真空容器中产生等离子体的第一高频电源; 设置在真空容器中并用于安装样品的样品台; 以及向样品台提供高频电力的第二高频电源。在等离子体处理装置中，第一高频电源和第二高频电源中的至少任一个提供时间调制的高频电力，并且用于控制时间调制的参数之一具有两个或更多个不同的控制范围，并且提供控制范围之一用于执行高精度控制。

4. 发明专利

JP2012212728A Plasma processing apparatus and plasma processing method 有权
标题翻译：等离子体加工设备和等离子体处理方法
公开(公告)号：JP2012212728A
公开(公告)日：2012-11-01
申请号：JP2011076585
申请日：2011-03-30
申请人： Hitachi High-Technologies Corp , 株式会社日立ハイテクノロジーズ
发明人： MORIMOTO MICHIKAZU , OGOSHI YASUO , OHIRAHARA YUZO , ONO TETSUO
IPC分类号： H01L21/3065 , H05H1/46
CPC分类号： H01L21/67069 , H01J37/32146 , H01J37/32192 , H01J37/32935 , H01J2237/3348 , H01L21/3065 , H01L21/31116 , H01L21/76232 , H01L22/10
摘要： PROBLEM TO BE SOLVED: To provide a plasma processing apparatus which supplies a time modulated intermittent high frequency power that can be controlled with high accuracy in a wide repetition frequency band, and to provide a plasma processing method using the plasma processing apparatus.SOLUTION: The plasma processing apparatus comprises a vacuum vessel, a plasma generation means for generating plasma in the vacuum vessel, a sample stand installed in the vacuum vessel and on which a sample is mounted, and a high frequency power supply which applies a time modulated intermittent high frequency power to the sample stand. The high frequency power supply has more than one different frequency bands, and performs time modulation of high frequency power by a repetition frequency for which the same range of respective frequency bands is used by an analog signal.
摘要翻译：解决的问题：提供一种等离子体处理装置，其提供可在宽重复频带中以高精度控制的时间调制的间歇高频功率，并提供使用等离子体处理装置的等离子体处理方法。解决方案：等离子体处理装置包括真空容器，用于在真空容器中产生等离子体的等离子体产生装置，安装在真空容器中并在其上安装样品的样品台和适用的高频电源对样品台进行时间调制的间歇高频功率。高频电源具有多于一个不同的频带，并通过模拟信号使用相同频带范围的重复频率进行高频功率的时间调制。版权所有（C）2013，JPO＆INPIT

5. 发明专利

JP2008306219A Semiconductor manufacturing apparatus 有权
标题翻译：半导体制造设备
公开(公告)号：JP2008306219A
公开(公告)日：2008-12-18
申请号：JP2008241952
申请日：2008-09-22
申请人： Hitachi High-Technologies Corp , 株式会社日立ハイテクノロジーズ
发明人： USUI TAKETO , KIKKAI MOTOHIKO , SHIROO KAZUHIRO , ONO TETSUO
IPC分类号： H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor manufacturing apparatus with improved throughput of process.
SOLUTION: The semiconductor manufacturing apparatus is an apparatus for etching a semiconductor wafer placed in a camber by using plasma generated in the chamber. The semiconductor wafer has a plurality of films, including a first film formed on the plane of the wafer and a second film formed on the first film. The apparatus includes a light detector for detecting the variations in the amount of light, consisting of a plurality of wavelengths obtained from wafer surface during a predetermined time duration; while the second film is etched, and a means for detecting the thickness of the first film, based on a specified wave shape obtained from the output of the detector.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供具有改进的处理能力的半导体制造装置。解决方案：半导体制造装置是通过使用在室中产生的等离子体来蚀刻放置在弧形中的半导体晶片的装置。半导体晶片具有多个膜，包括形成在晶片平面上的第一膜和形成在第一膜上的第二膜。该装置包括：光检测器，用于检测在预定时间期间由晶片表面获得的多个波长组成的光量变化; 同时蚀刻第二膜，以及用于基于从检测器的输出获得的指定波形来检测第一膜的厚度的装置。版权所有（C）2009，JPO＆INPIT

6. 发明专利

JP2005183833A Plasma processing equipment and processing method 有权
标题翻译：等离子体加工设备和加工方法
公开(公告)号：JP2005183833A
公开(公告)日：2005-07-07
申请号：JP2003425594
申请日：2003-12-22
申请人： Hitachi High-Technologies Corp , Hitachi Ltd , 株式会社日立ハイテクノロジーズ , 株式会社日立製作所
发明人： TETSUKA TSUTOMU , IKENAGA KAZUYUKI , ONO TETSUO , KIKKAI MOTOHIKO , ITABASHI NAOSHI
IPC分类号： H01L21/3065 , C23F4/00 , H01J37/32
CPC分类号： H01J37/32477 , C23F4/00
摘要： PROBLEM TO BE SOLVED: To provide the plasma processing equipment and processing method that reduces impurities via reactor vessels, maintaining plasma stability.
SOLUTION: In the plasma processing equipment, 90% of the side wall of the inner wall 101 in the reaction chamber 1 is covered with a dielectric substance 102, and a grounded conductive material 21a with an area size smaller than or equal to 10% of the side wall of the inner wall 101 is provided in a way that direct current flows via the plasma. A DC earth made up of a conductive material 21 is grounded at a location where the floating potential of plasma (or plasma density) is higher than that (or plasma density) of plasma 9 near a wafer holding electrode 14 with a relatively large degree of wall reduction.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供通过反应器容器减少杂质的等离子体处理设备和处理方法，保持等离子体稳定性。解决方案：在等离子体处理设备中，反应室1中的内壁101的侧壁的90％被电介质物质102覆盖，并且区域尺寸小于或等于内壁101的侧壁的10％以直流电流流过等离子体的方式设置。由导电材料21构成的直流接地在等离子体的浮动电位（或等离子体密度）高于晶片保持电极14附近的等离子体9的（或等离子体密度）的位置处接地，具有较大程度的墙壁减少。版权所有（C）2005，JPO＆NCIPI

7. 发明专利

JP2005150606A Plasma treatment apparatus 审中-公开
标题翻译：等离子体处理装置
公开(公告)号：JP2005150606A
公开(公告)日：2005-06-09
申请号：JP2003389402
申请日：2003-11-19
申请人： Hitachi High-Technologies Corp , 株式会社日立ハイテクノロジーズ
发明人： SHIRAYONE SHIGERU , ONO TETSUO , KIKKAI MOTOHIKO , ABE TAKAHIRO
IPC分类号： H05H1/46 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To obtain a configuration capable of controlling, at an arbitrary temperature, respective portions within a treatment chamber in a plasma treatment apparatus. SOLUTION: In the plasma treatment apparatus including a plasma generating means (high frequency power source 8, matching circuit 9, antenna 10) capable of generating plasma within the treatment chamber, a means (substrate placing electrode 5, high frequency power source 18, matching circuit 19) for applying a high frequency power to a material 17 to be treated, and the treatment chamber to which a vacuum exhaustion device 7 is connected and which is capable of reducing its internal pressure, the treatment chamber is composed of an upper portion 1 of the treatment chamber which comprises a heating part 20 and becomes a high temperature portion, and a lower portion 3 of the treatment chamber which comprises a cooling part 21 and becomes a low temperature portion, and a central portion 2 of the treatment chamber provided between both the portions is defined as a heat insulating part composed of e.g. foaming aluminum having a heat conduction modulus of ≤10 (W/mK). COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：为了获得能够在任意温度下控制等离子体处理装置中的处理室内的各个部分的构造。解决方案：在包括能够在处理室内产生等离子体的等离子体产生装置（高频电源8，匹配电路9，天线10）的等离子体处理装置中，装置（基板放置电极5，高频电源 18，用于向要处理的材料17施加高频功率的匹配电路19）以及连接有真空耗尽装置7并且能够降低其内部压力的处理室，处理室由处理室的上部1包括加热部20并成为高温部，处理室的下部3包括冷却部21并成为低温部，处理室的中心部2 设置在两个部分之间的腔室被定义为由例如，导热模量为≤10（W / mK）的发泡铝。版权所有（C）2005，JPO＆NCIPI

8. 发明专利

JP2004273872A Semiconductor manufacturing apparatus 有权
公开(公告)号：JP2004273872A
公开(公告)日：2004-09-30
申请号：JP2003064322
申请日：2003-03-11
申请人： Hitachi High-Technologies Corp , 株式会社日立ハイテクノロジーズ
发明人： USUI TAKETO , KIKKAI MOTOHIKO , SHIROO KAZUHIRO , ONO TETSUO
IPC分类号： H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor manufacturing apparatus of which the throughput of processing is improved.
SOLUTION: This semiconductor manufacturing device for executing the etching treatment of a semiconductor wafer is arranged in a container, and formed with a film on its surface by using plasma generated in the container. The device is provided with a detector for detecting the change of the quantity of lights concerning at least two wavelength acquired from the wafer surface in the predetermined period of the treatment, and a function for comparing time duration between a time when the quantity of the lights of one of those two wavelength is turned to be the maximum value and a time when the quantity of the lights of the other waveform is turned to be the minimum value with a predetermined value to judge the condition of the etching treatment.
COPYRIGHT: (C)2004,JPO&NCIPI

9. 发明专利

JP2014232825A プラズマ処理方法有权
标题翻译：等离子体处理方法
公开(公告)号：JP2014232825A
公开(公告)日：2014-12-11
申请号：JP2013113593
申请日：2013-05-30
申请人：株式会社日立ハイテクノロジーズ , Hitachi High-Technologies Corp
发明人： NAKATSUKA TAKANORI , ONO TETSUO , EITOKU HIROFUMI , USUI TAKETO
IPC分类号： H01L21/3065 , H05H1/00
摘要：【課題】本発明は、フルオロカーボンガス、SiF4ガス等の堆積性ガスを用いたプラズマエッチングを行うプラズマ処理方法において、マスク上に堆積した堆積物の膜厚を制御することができるプラズマ処理方法を提供する。【解決手段】本発明は、堆積性ガスを用いて被エッチング膜をプラズマエッチングするプラズマ処理方法において、マスク上に堆積した堆積膜の膜厚を測定し、前記測定された堆積膜の膜厚と前記堆積膜の膜厚の目標値との差を求め、前記求められた差が許容値より大きい場合、前記求められた差が許容値内となるようにエッチングパラメータを制御しながら前記被エッチング膜をエッチングすることを特徴とする。【選択図】図3
摘要翻译：要解决的问题：提供一种通过使用诸如碳氟化合物气体或SiF气体的沉积气体进行等离子体蚀刻的等离子体处理方法，其可以控制积聚在掩模上的沉积物的膜厚度。解决方案：等离子体处理方法通过使用沉积气体对待蚀刻的膜进行等离子体蚀刻，包括以下步骤：测量累积在掩模上的沉积膜的厚度; 确定测量的沉积膜厚度和沉积膜厚度的目标值之间的差; 并且如果确定的差值大于允许值，则蚀刻要蚀刻的膜，以便在控制蚀刻参数的同时确定的差落在容许值内。

10. 发明专利

JP2013118359A Plasma etching method 有权
标题翻译：等离子体蚀刻法
公开(公告)号：JP2013118359A
公开(公告)日：2013-06-13
申请号：JP2012229411
申请日：2012-10-17
申请人： Hitachi High-Technologies Corp , 株式会社日立ハイテクノロジーズ
发明人： WATANABE TOMOYUKI , MORIMOTO MICHIKAZU , YAKUSHIJI MAMORU , ONO TETSUO
IPC分类号： H01L21/3065
CPC分类号： H01L21/3065 , H01J37/32192 , H01J2237/334 , H01L21/31116 , H01L21/32132
摘要： PROBLEM TO BE SOLVED: To provide a plasma etching method that can improve an etching selection ratio of a film to be etched to a film different from the film to be etched compared with the prior art.SOLUTION: In a plasma etching method for selectively etching a film to be etched (SiN) against a film (SiO) different from the film to be etched, plasma etching of the film to be etched is performed using a gas that can generate a deposited film (SiO) containing components similar to components of the different film.

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