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1. 发明专利

JP2014033225A Plasma processing apparatus 有权
标题翻译：等离子体加工设备
公开(公告)号：JP2014033225A
公开(公告)日：2014-02-20
申请号：JP2013218795
申请日：2013-10-22
申请人： Hitachi High-Technologies Corp , 株式会社日立ハイテクノロジーズ
发明人： ADACHI JUNJI , MATSUMOTO TAKESHI , MIYAJI MASAKAZU , HIRATA AKIRA , YAGI KATSUJI
IPC分类号： H01L21/3065 , H05H1/46
摘要： PROBLEM TO BE SOLVED: To prevent a rise of plasma potential occurring due to insufficient DC ground, and to prevent occurrence of abnormal discharge in a plasma etching processing apparatus.SOLUTION: A plasma processing apparatus comprises: a vacuum container where plasma is generated inside; a base flange constituting a lower part of the vacuum container and grounded; a lower electrode arranged in the vacuum container and on which a sample to be worked is placed; a vertical drive mechanism vertically driving the lower electrode; a cylindrical first cover fixed to a ground potential part included in the lower electrode and for shielding the vertical drive mechanism from the plasma; and a cylindrical second cover fixed to the base flange and for shielding the vertical drive mechanism from the plasma. In the plasma processing apparatus performing surface processing on the sample to be worked with the plasma, the cylindrical second cover is made of conductor material.
摘要翻译：要解决的问题：为了防止由于DC地面不足而产生的等离子体电位升高，并且防止在等离子体蚀刻处理装置中发生异常放电。等离子体处理装置包括：内部产生等离子体的真空容器; 构成真空容器的下部的基座凸缘接地; 布置在真空容器中的放置待加工样品的下电极; 竖直驱动下部电极的垂直驱动机构; 固定到下电极中的地电势部分并用于屏蔽垂直驱动机构与等离子体的圆柱形第一盖; 以及固定到基座凸缘并用于将垂直驱动机构从等离子体屏蔽的圆柱形第二盖。在对等离子体加工样品进行表面处理的等离子体处理装置中，圆筒状的第二盖由导体材料构成。

2. 发明专利

JP2014179576A Method for controlling plasma processing device 有权
标题翻译：用于控制等离子体处理装置的方法
公开(公告)号：JP2014179576A
公开(公告)日：2014-09-25
申请号：JP2013112562
申请日：2013-05-29
申请人： Hitachi High-Technologies Corp , 株式会社日立ハイテクノロジーズ
发明人： MORI MASASHI , HIRATA AKIRA , YAMAMOTO KOICHI , ARASE TAKAO
IPC分类号： H01L21/3065 , H05H1/46
CPC分类号： H01L21/67069 , H01J37/32091 , H01J37/32183 , H01J37/32926 , H01J37/3299
摘要： PROBLEM TO BE SOLVED: To provide a method for controlling a plasma processing device which eliminates the need of prior investigation of a resonance point while maintaining low contamination and high uniformity even in a multi-step etching.SOLUTION: A method for controlling plasma processing device including a step of adjusting high-frequency bias current flowing to an opposed antenna electrode includes the steps of: setting reactance of a variable element to an initial value (S2); detecting bias current flowing to the opposed antenna electrode (S4); searching for the maximum value of the detected current (S5, S6); and moving the reactance value of the variable element to the value set from the maximum value and fixing the reactance value (S7, S8).
摘要翻译：要解决的问题：提供一种等离子体处理装置的控制方法，即使在多步骤蚀刻中也能够保持低污染和高均匀性的同时消除对谐振点的先前研究的需要。解决方案：一种等离子体处理装置的控制方法包括调整流向相对的天线电极的高频偏置电流的步骤包括以下步骤：将可变元件的电抗设定为初始值（S2）; 检测流向对置天线电极的偏置电流（S4）; 搜索检测电流的最大值（S5，S6）; 并且将可变元件的电抗值从最大值移动到设定的值并固定电抗值（S7，S8）。

3. 发明专利

JP2011124295A Plasma processing apparatus 审中-公开
标题翻译：等离子体加工设备
公开(公告)号：JP2011124295A
公开(公告)日：2011-06-23
申请号：JP2009279037
申请日：2009-12-09
申请人： Hitachi High-Technologies Corp , 株式会社日立ハイテクノロジーズ
发明人： ADACHI JUNJI , MATSUMOTO TAKESHI , MIYAJI MASAKAZU , HIRATA AKIRA , YAGI KATSUJI
IPC分类号： H01L21/3065
摘要： PROBLEM TO BE SOLVED: To prevent a rise of plasma potential occurring owing to an insufficient DC ground, and also to prevent occurrence of abnormal discharge in a plasma etching processing apparatus.
SOLUTION: The plasma processing apparatus has: a vacuum container 1 where plasma is generated inside; a base flange which constitutes a lower part of the vacuum container 1 and is grounded; a lower electrode 2 which is arranged in the vacuum container 1 and on which a sample 3 to be worked is placed; a vertical drive mechanism which vertically drives the lower electrode 2; a cylindrical first cover 27 which is fixed to a ground potential part which the lower electrode 2 has and shields the vertical drive mechanism from plasma; and a cylindrical second cover 28 which is fixed to the base flange and shields the vertical drive mechanism from plasma. The apparatus performs a surface processing on the sample with plasma, and the cylindrical second cover 28 is made of a conductor material.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：为了防止由于DC地面不足而产生的等离子体电位的上升，并且还防止等离子体蚀刻处理装置中的异常放电的发生。解决方案：等离子体处理装置具有：内部产生等离子体的真空容器1; 构成真空容器1的下部并接地的基座凸缘; 布置在真空容器1中并放置待加工样品3的下电极2; 垂直驱动下部电极2的垂直驱动机构; 固定到下电极2的接地电位部分并且将垂直驱动机构从等离子体屏蔽的圆柱形第一盖27; 以及圆柱形的第二盖28，其固定到基部凸缘并且将垂直驱动机构从等离子体屏蔽。该装置对等离子体的样品进行表面处理，圆筒形的第二盖28由导体材料制成。版权所有（C）2011，JPO＆INPIT

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