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    • 3. 发明专利
    • MANUFACTURING APPARATUS
    • JPS5619635A
    • 1981-02-24
    • JP9500479
    • 1979-07-27
    • HITACHI LTD
    • NAGATOMO HIROTOMAEJIMA HIROSHISUZUKI JIYUNFUJIKAWA YOSHIYUKI
    • B65G49/07H01L21/00H01L21/02H01L21/67H01L21/677H01L21/68
    • PURPOSE:To eliminate the pollution of a manufacturing apparatus and to improve the yield of the apparatus by executing all product management, process control, and treatment and conveyance control with a computer, organically controlling the respective control sections and smoothly automating the flow of works. CONSTITUTION:The treating types and the lots of works 39 are confirmed (product management) in an automatic storage machine 28 by a central control device 29, to examine the surplus, mechanism of the works in the respective sections 15, 17... 27 and to determine the priority sequency of the products. Vacant treatment units are detected, a work conveying machine 43 is driven according to the priority sequency to prepare the conveyance, the complete lots are detected in parallel, and the works are contained in a vacant container 28. After inspecting all treating units, the advancement of the works are always estimated to treat, convey and transfer the works. A central control device (computer) executes the work management, product control, treating condition control, information collection, and sequence control to automatically process all the works in an air conditioned and dust free chamber 31 to prevent contamination of wafers. This configuration can process the works of high quality in high efficiency.
    • 4. 发明专利
    • Vapor phase chemical treatment equipment
    • 蒸气相化学处理设备
    • JPS59145519A
    • 1984-08-21
    • JP24197883
    • 1983-12-23
    • Hitachi Ltd
    • AKIBA MASAKUNINAGATOMO HIROTOSUZUKI JIYUNYOSHIMI TAKEO
    • C30B25/12C23C16/44H01L21/205H01L21/302H01L21/3065H01L21/31
    • C23C16/4401H01L21/02532H01L21/0262
    • PURPOSE:To avoid sticking of flakes by providing a wafer holding member which can hold a main surface of a wafer, which is to be treated, downwardly. CONSTITUTION:A bell-jar cover 21 is turned over by 180 deg. by turning a reversal motor 40 to a normal direction and a wafer fitting surface of a table 34 faces upward. At this stage, a wafer 33 is fixed by a pin 42 and a lever 43. Then the bell-jar cover 21 is turned over by 180 deg. to the opposite direction by turning the reversal motor 40 to a reverse direction so that the wafer fitting surface of the table 34 faced downward. Then the table 34 and the wafer 33 are heated by a heater 35. After that, the table 34 is rotated at a slow speed by rotating a motor 30 and a silicon film is formed on the surface of the wafer 33 by generating plasma. After the silicon film is formed for a prescribed time, supply of reaction gas, application of voltage and the rotation of the table are stopped and then a bell-jar body 1 is descended. Then, the bell-jar cover 21 is turned over again by 180 deg. and the wafer 33 is removed from the table 34.
    • 目的:通过提供可将待处理晶片的主表面向下的晶片保持构件来避免薄片的粘附。 构成:喇叭盖21翻转180度。 通过将反转马达40转动到正常方向,并且台34的晶片装配表面面向上。 在这个阶段,晶片33通过销42和杆43固定。然后钟罩盖21翻转180度。 通过将反转电动机40转向相反方向,使得台34的晶片装配表面朝下而向相反方向。 然后,工作台34和晶片33被加热器35加热。然后,通过旋转电动机30使工作台34以慢速旋转,并且通过产生等离子体在晶片33的表面上形成硅膜。 在硅膜形成规定时间之后,停止反应气体的供给,电压的施加和工作台的旋转,然后钟罩体1下降。 然后,将钟罩盖21重新翻转180度。 并且将晶片33从工作台34中取出。
    • 5. 发明专利
    • Plasma cvd device
    • 等离子体CVD装置
    • JPS5727032A
    • 1982-02-13
    • JP10112680
    • 1980-07-25
    • Hitachi LtdHitachi Tokyo Electronics Co Ltd
    • AKIBA MASAKUNINAGATOMO HIROTOYOSHIMI TAKEOSUZUKI JIYUNHIRAIWA ATSUSHISAKAI HIDEOHOSHINO KUNIOSAKAI KIYOMIYONEMITSU KAZUHIKO
    • H01L21/205C23C16/50H01L21/31
    • C23C16/50
    • PURPOSE:To contrive to simplify equipment of a wafer in a plasma CVD device and to improve a growth film by a method wherein wafer supporting rings are equipped in penetrating holes formed in the upper part electrode in a reaction furnace, and a chamber to be fed with reaction gas and having plural fine holes for spouting of reaction gas is provided in the lower part electrode. CONSTITUTION:A supporting ring 22 having plural protruding nails 22a at the inside circumferential edge is engaged in a penetrating hole 21 provided on the upper part electrode 3 and having a little larger diameter than the wafer W, and when the wafer W is inserted in the supporting ring 22 from the upper part, the wafer positions itself automatically at the center of the ring and is supported by the protruding nails 22a. While reaction gas fed through a center hollow shaft 9 of the lower part electrode 2 is introduced in the disk type chamber 28 in the lower part electrode 2, and is spouted out uniformly in a bell jar 1 through the plural fine holes 24, and distribution of gas is unified. Accordingly equipping work of the wafer W to the upper part electrode 3 is simplified without trouble, and equilization of the growth film and enhancement of growth speed and quality of the product can be attained.
    • 目的:为了简化等离子体CVD装置中的晶片的设备,并且通过其中晶片支撑环装配在反应炉中的上部电极中形成的穿透孔中的方法,以及要供给的腔室来改善生长膜 在下部电极中设置反应气体并具有多个用于喷射反应气体的细孔。 构成:在内周缘具有多个突出的指甲22a的支撑环22被接合在设置在上部电极3上并且具有比晶片W稍大的直径的贯通孔21中,并且当将晶片W插入到 支撑环22从上部开始,晶片自身位于环的中心并由突出的指甲22a支撑。 通过下部电极2的中​​心空心轴9供给的反应气体被引入到下部电极2的圆盘型室28中,并且通过多个细孔24在钟罩1中均匀地喷出,分布 的气体是统一的。 因此,将晶片W配置到上部电极3的工作简单化,并且可以实现生长膜的等效化,生产速度的提高和产品质量的提高。
    • 6. 发明专利
    • METHOD OF AND DEVICE FOR INSPECTING SURFACE OF ARTICLE
    • JPS5594145A
    • 1980-07-17
    • JP135679
    • 1979-01-12
    • HITACHI LTD
    • AKIBA MASAKUNINAGATOMO HIROTOSUZUKI JIYUN
    • G01N21/88G01B11/30G01N21/21G01N21/94G01N21/95G01N21/956
    • PURPOSE:To readily detect a foreign material on the surface of an article having a projected surface by illuminating light on the surface of the article to generate reflected light from the surface, polarizing the reflected light, extracting the light wave in special direction, and detecting the light intensity of the light wave. CONSTITUTION:A semiconductor wafer is contained in a cartridge 2. The wafer is placed by a feeder 3 on a table 4. This device comprises a mechanism 5 for rotating the table 4, a drive unit 6 for horizontally moving the table 4, and a light source 7 for generating parallel rays. The light is transmitted through a polarizing plate 8, objective lenses 9, 10, an illuminating light projecting mirror 11, a visually inspecting mirror 12, a relay lens 13, an aperture 14, and a photoelectric converter 15 to an electronic circuit unit 16 for processing information. Laser light is projected to the side surface of the semiconductor wafer 21 to be detected. The reflected light is detected through the converter 15 while rotating the table 4. Thus, the size and number of the foreign materials are detected by the reflected light when the plate 8 becomes the direction to detect only non-polarized light.
    • 9. 发明专利
    • Vapor-phase chemical processing device
    • 蒸气相化学处理装置
    • JPS59145532A
    • 1984-08-21
    • JP24197983
    • 1983-12-23
    • Hitachi Ltd
    • AKIBA MASAKUNINAGATOMO HIROTOSUZUKI JIYUNYOSHIMI TAKEO
    • H01L21/31C23C16/44
    • C23C16/44C23C16/4583
    • PURPOSE:To enable to prevent the adhesion of flakes by a method wherein the table on which a wafer and the like will be placed and fixed is provided in such a manner that it will be horizontally rotated around a rotary shaft. CONSTITUTION:After a bell jar main body 1 has been brought down to the prescribed position by inverting a guide pole 16, a bell jar cover 21 is turned reversely at 180 deg. by driving an inverting motor 40 normally, and the water attaching surface of the table 34 is faced upward. Then, the bell jar cover 21 is turned reversely at 180 deg. by reversing the inverting motor 40, the wafer attaching surface of the table 34 is faced downward, and the table 34 and the wafer 33 are heated up using a heater 35. At the same time, the air in a reaction chamber is exhausted from an exhaust tube 13, and the reaction gas such as SiH4, NH3, N2 and the like is supplied into the reaction chamber from a nozzle 11. Subsequently, the table 34 is revolved at a low speed by driving a motor 30, and a silicon film is formed on the surface of the wafer 33 while a voltage is applied between the table 34 and an electrode 2 and plasma is being generated there.
    • 目的:为了防止通过将晶片等放置和固定的台子以围绕旋转轴水平旋转的方式来防止薄片附着。 构成:在钟罩主体1通过倒转导柱16而下降到规定位置之后,钟罩盖21在180度反向旋转。 正常地驱动翻转电动机40,并且台34的水附着面朝上。 然后,钟罩盖21在180度反向转动。 通过反转反转电动机40,工作台34的晶片安装表面面向下,并且台34和晶片33使用加热器35加热。同时,反应室中的空气从 排气管13,并且诸如SiH 4,NH 3,N 2等的反应气体从喷嘴11供应到反应室中。随后,通过驱动电动机30,工作台34以低速旋转,并且硅膜 形成在晶片33的表面上,同时在台34和电极2之间施加电压,并且在那里产生等离子体。
    • 10. 发明专利
    • FOREIGN MATTER INSPECTING METHOD
    • JPS54101389A
    • 1979-08-09
    • JP727678
    • 1978-01-27
    • HITACHI LTD
    • AKIBA MASAKUNINAGATOMO HIROTOSUZUKI JIYUN
    • G01B11/30G01N21/94G01N21/956G01R31/26H01L21/66
    • PURPOSE:To automatically inspect foreign matter rapidly by performing radiation of analyzing rays plural times in correspondence to each direction at varying radiation angles to the stepped surfaces of undulations and judging only the reflected light which has commonly been detected from the results of the plural detections as the reflected light from the foreign matter. CONSTITUTION:5 is an inspecting XY table, 6 a focusing leaf spring, 7 an auto fucusing device, 8 a wafer rest table, 9 the semiconductor wafer under inspection, 10 an objective lens, 11 an observation illuminating light radiating mirror, 12 a lens, 13 an obserbation illuminating lamp, 14 a field of view changing prism, 15 an eyepiece lens for visual observation, 16 an eyepiece lens for automatic inspection and 17 a photo diode array for converting the reflected light to electric signal by detecting the same and the output thereof is arithmetically processed, whereby the foregin matter inspection is automatically accomplished. 18 is an inspecting light source and the same number of said light sources as the number in the direction of the stepped surfaces of the undulations of the semiconductor wafer under inspection are installed in correspondence thereto and when each of these repeats flashing by a constant sequence, the radiation directions of the inspecting rays to the semiconductor wafer are changed. And only the reflected light commonly observed is judged to be the reflected light from the foreign matter.