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1. 发明专利

JPH09264728A METHOD AND APPARATUS FOR DETECTION OF FLAW OR FOREIGN BODY AS WELL AS ELECTRONIC COMPONENT WITH FLAW OR FOREIGN BODY INSPECTED 失效
公开(公告)号：JPH09264728A
公开(公告)日：1997-10-07
申请号：JP25184396
申请日：1996-09-24
申请人： HITACHI LTD , HITACHI ELECTR ENG
发明人： DOI HIDEAKI , SHIBA MASATAKA , NAKAGAKI AKIRA , HIROI TAKASHI , NAKASU NOBUAKI , NAKAGAWA YASUO , WATANABE TETSUYA , JINGU TAKAHIRO
IPC分类号： G01B11/00 , G01B11/30 , G01N21/88 , G01N21/94 , G01N21/956
摘要： PROBLEM TO BE SOLVED: To expand the dynamic range of the detection of a flaw or a foreign body which exists on a substrate such as a semiconductor wafer or the like. SOLUTION: An inspection image 32a and a reference image 32b are obtained from digital information in which the output of a linear sensor 16 is A/D- converted 30. A flaw candidate 39 is detected by using disagreement information 35 by a two-chip comparison circuit 41 and by using mask information by a saturation-region processing circuit 42. The two-chip comparison circuit 41 enables a level to be matched by a correction circuit. In addition, when a threshold value in a comparison can be changed, the dynamic range of a linear sensor as a bottleneck for increasing a sensitivity is expanded without lowering a sensitivity more than required. The size or the position of a flaw or a foreign body which is comparatively large can be identified even when a blooming operation is generated by the flaw or the foreign body. Thereby, the accuracy of a flaw or foreign-body inspection apparatus can be enhanced.

2. 发明专利

JPH08210989A METHOD FOR DETECTING FINE DEFECT AND DEVICE THEREFOR 失效
公开(公告)号：JPH08210989A
公开(公告)日：1996-08-20
申请号：JP1948995
申请日：1995-02-07
申请人： HITACHI LTD , HITACHI ELECTR ENG
发明人： SHIBA MASATAKA , MORIOKA HIROSHI , NAGAYAMA KAZUHIKO , YANAI TOSHIAKI , WATANABE TETSUYA , MATSUNAGA RYOJI , NOGUCHI MINORU
IPC分类号： G01N21/956 , G01N21/88 , G01N21/94 , G11B5/84 , H01L21/66
摘要： PURPOSE: To provide a method for detecting a fine defect and a device therefor in which a fine defect such as a fine foreign matter present on a base having a thin film for transmitting a light formed thereon can be stably detected with high sensitivity. CONSTITUTION: The laser beam emitted from a semiconductor laser oscillator 5 is made into a plurality of mutually non-interfering luminous fluxes, which are effectively collected and emitted onto a substrate 1 having a thin film 1b for transmitting a light formed thereon at the same time at different incident angles T1 -Tn so that the intensities of the reflected lights generated from the thin film 1b formed on the substrate 1 are smoothed or averaged. The scattered light of the emitted light caused by a fine defect 3 such as a fine foreign matter present on the base is converged by a condenser lens 11, and detected by a detector 14.

3. 发明专利

JPH07318504A FOREIGN MATTER DETECTING LIGHT RECEIVING SYSTEM FOR WAFER 失效
公开(公告)号：JPH07318504A
公开(公告)日：1995-12-08
申请号：JP13251994
申请日：1994-05-23
申请人： HITACHI ELECTR ENG , HITACHI LTD
发明人： YANAI TOSHIAKI , SHIBA MASATAKA
IPC分类号： G01N21/88 , G01N21/94 , G01N21/956 , H01L21/66
摘要： PURPOSE:To improve the S/N by excluding stray lights from a scanning width and its periphery in a method for scanning by a rotary mirror and receiving only the scattered lights of a spot. CONSTITUTION:The foreign matter detecting and light receiving system for a wafer comprises a rotary mirror 324 disposed between a condensing lens 321 and a photoreceiver 322 to rotate in synchronization with the rotary mirror 313 of a light emitting system 31 to reflect the scattered lights LR of a spot condensed by the lens 321, a motor 325 for rotating the mirror 324, and a slit plate 326 which passes the lights LR of the spot due to the foreign matter and shuts OFF stray lights.

4. 发明专利

JPH09269294A MANUFACTURE OF ELECTRONIC PART 失效
公开(公告)号：JPH09269294A
公开(公告)日：1997-10-14
申请号：JP8020096
申请日：1996-04-02
申请人： HITACHI LTD , HITACHI ELECTR ENG
发明人： SHIBA MASATAKA , WATANABE KENJI , HAMADA TOSHIMITSU , ISHIKAWA SEIJI , GO NAOKI , YANAI TOSHIAKI , WATANABE TETSUYA , JINGU TAKAHIRO
IPC分类号： G01N21/84 , B23Q41/08 , G05B19/418 , G06Q50/00 , G06Q50/04 , H01L21/66
摘要： PROBLEM TO BE SOLVED: To establish an optimum examination device and a frequency of examination in manufacture of semiconductor wafers and the like. SOLUTION: Each examination device of a group 1 of examination devices is connected to a network 8, and after an examination is finished, the result is transferred to a data gathering system 2. Where a predetermined badness mode is confirmed, same waferes selected from a predetermined process are examined by examination devices of different type of the group of examinations devices 1 and the data are gathered and analyzed to calculate the degree of correlation between types of device 4. On the other hand, a mean frequency of occurrence of badness may be obtained by analyzing the badness occurrence progress in the same process 5. Then, an optimum examination device and a frequency of examination are successively obtained on the basis of the results of calculations of calculation processing of the degree of correlation between types of device and of calculation processing of frequency of occurrence of badness 6, and the method of introduction of wafers into the group of examination devices 1 or the like is indicated through a system 7 managing the group of examination devices. It is thus possible to easily establish complicated conditions of examination such as an applied examination device, a frequency of examination and the like in manufacture of electronic parts as well as dramatically improve the economic efficiency of examination by performing an expected value minimization of the overall loss.

5. 发明专利

JP2003197699A PROCESS PERFORMING EQUIPMENT AND SYSTEM THEREFOR 审中-公开
公开(公告)号：JP2003197699A
公开(公告)日：2003-07-11
申请号：JP2002262450
申请日：2002-09-09
申请人： HITACHI LTD
发明人： NOGUCHI MINORU , KENBO YUKIO , MORIOKA HIROSHI , NISHIYAMA HIDETOSHI , DOI HIDEAKI , SHIBA MASATAKA , SHIGYO YOSHIHARU , MATSUOKA KAZUHIKO , WATANABE KENJI , OSHIMA YOSHIMASA , ENDO FUMIAKI , TANIGUCHI YUZO
IPC分类号： G01B11/30 , G01N21/956 , H01L21/027 , H01L21/66
摘要： PROBLEM TO BE SOLVED: To provide a process performing equipment, a system for the same and product storing equipment by which a semiconductor substrate can be produced by high yield, by reducing the generation of abnormal stuck foreign matter to the semiconductor substrate in various kinds of process processors. SOLUTION: In order to detect the foreign matter stuck onto a work 4 carried by a handling mechanism 5 inside of a carrying room 104 or inside of a spare room in the process performing equipment, the process performing equipment is provided with a foreign matter inspection device having a detection head 1a and a processing means. The detection head 1a comprises a plurality of sets of an illumination optical system for irradiating the surface of the work 4 with a luminous flux converged from a direction oblique to the surface of the work 4, and a detection optical system which collects scattered light from the foreign matter on the work irradiated by the illumination optical system an photodetects it by a photoelectric conversion means. The processing means processes a signal detected by the photoelectric conversion means of the detection head to extract a signal from the foreign matter. COPYRIGHT: (C)2003,JPO

6. 发明专利

JP2001267383A MANUFACTURING LINE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JP2001267383A
公开(公告)日：2001-09-28
申请号：JP2000076337
申请日：2000-03-14
申请人： HITACHI LTD
发明人： HASHIMOTO KAZUE , SHIBA MASATAKA , MIZUNO FUMIO
IPC分类号： G21K5/04 , H01J37/20 , H01L21/66 , H01L21/677 , H01L21/68 , H05K9/00
摘要： PROBLEM TO BE SOLVED: To provide a manufacturing line of a semiconductor device or the like, that can execute processes with high resolution to semiconductor device make very fine, without being substantially affected by electromagnetic noise, viblations, and the like generated by a carrier device or the like in a charged particle beam process device, such as an SEM apparatus. SOLUTION: The manufacturing line is equipped with a charged particle beam processing apparatus that has a detection unit for detecting electromagnetic noise, applies a charged particle beam to a sample introduced into a sample chamber for executing desired process, and leads the sample from inside of the sample chamber, the carrier device that travels near the process apparatus or travels to go into and out of the inside of the apparatus, and uses an electric motor as a driving source for conveying a cassette where the plurality of samples are accommodated, and a control device that controls the function of the driving source of the carrier device to stop or inhibit the functions when the electromagnetic noise exceeds a specific level, where the electromagnetic noise is detected by the detection unit in a section for executing the desired process by applying the charged particle beam in the process device.

7. 发明专利

JP2001085327A SEMICONDUCTOR DEVICE AND ITS MANUFACTURE 失效
公开(公告)号：JP2001085327A
公开(公告)日：2001-03-30
申请号：JP2000227540
申请日：2000-07-24
申请人： HITACHI LTD
发明人： NOGUCHI MINORU , KENBO YUKIO , OSHIDA YOSHITADA , SHIBA MASATAKA , YOSHITAKE YASUHIRO , MURAYAMA MAKOTO
IPC分类号： H01L21/027 , G03F1/30 , G03F1/68 , G03F7/20 , G03F1/08
摘要： PROBLEM TO BE SOLVED: To enable a monochromatic microcircuit pattern which is located on a mask and different from a pattern that is transferred onto a substrate to be very accurately checked by a method wherein a first pattern is formed on a wafer, and then a second mask with a phase shifter is irradiated with an excimer laser beam for light exposure, and the wafer is etched. SOLUTION: A first mask pattern is projected onto a wafer for light exposure, a first pattern is formed on the wafer by etching, a second mask with a phase shifter is irradiated with an excimer laser beam to project a second mask pattern onto the wafer for exposure, and a pattern is formed on the wafer by etching. At least, a part of O-order diffracted light is shielded with a light shielding plate (image formation spatial filter 3302) on a diffraction image plane, by which only diffracted light inverted in phase reaches to an image-formation plane, so that it appears that a phase film is formed on the mask from a viewpoint of an image-formation plane. As a result, a circuit pattern is transferred onto a wafer the same as a phase shifter method.

8. 发明专利

JPH10242023A MANUFACTURE FOR SEMICONDUCTOR INTEGRATED CIRCUIT 失效
公开(公告)号：JPH10242023A
公开(公告)日：1998-09-11
申请号：JP4187497
申请日：1997-02-26
申请人： HITACHI LTD
发明人： SHIBA MASATAKA , SHIMODA ATSUSHI
IPC分类号： G01N21/84 , H01L21/027 , H01L21/66
摘要： PROBLEM TO BE SOLVED: To improve quality of an inspection and a review in manufacturing of a semiconductor integrated circuit. SOLUTION: A lower pattern 2 is formed on a silicon substrate or an undercoat substrate 1 having several layers formed on the silicon substrate. At this time, a material absorbing a light of a wavelength used at an inspection or review is used for a layer 3 of an oxide film or the like to be formed on the substrate so as not to pass the light of the wavelength of the inspection or review.

9. 发明专利

JPH10198798A METHOD AND DEVICE FOR PARALLEL PROCESSING 失效
公开(公告)号：JPH10198798A
公开(公告)日：1998-07-31
申请号：JP266597
申请日：1997-01-10
申请人： HITACHI LTD
发明人： KAWAGUCHI HIROSHI , DOI HIDEAKI , NAKAGAKI AKIRA , SHIBA MASATAKA
IPC分类号： G01N21/88 , G01N21/94 , G06F11/22 , G06T1/20 , H01L21/66
摘要： PROBLEM TO BE SOLVED: To provide a parallel signal processing method optimum in ability and economy corresponding to input signal, a method for increasing a processor element(PE), and a method for accelerating the processing speed. SOLUTION: A synchronizing signal is supplied to a processor and efficiently divided into parallel processing units. Data from a local bus 16 and a control signal are sent through a controller to a PE 30, a memory 31, a dedicated module 32 and a program memory 43 inside a processor unit 3, information showing the complexity of respective processing is added as header information to every processing by a compiler, processing is divided to the PE of software processing and a module dedicated to hardware processing corresponding to processing contents or request speed, the operating states of the processor unit, the PE, the memory, the dedicated module and the program memory are respectively recognized by a processor unit status signal and a status signal 36, the operation defect of the processor unit 3 is prevented and processing is efficiently performed.

10. 发明专利

JP2574807B2 失效
公开(公告)号：JP2574807B2
公开(公告)日：1997-01-22
申请号：JP21273287
申请日：1987-08-28
申请人： HITACHI LTD
发明人： NAKADA TOSHIHIKO , SHIBA MASATAKA
IPC分类号： G01B11/06 , G01B11/22

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