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1. 发明专利

JP2013098266A Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：JP2013098266A
公开(公告)日：2013-05-20
申请号：JP2011238163
申请日：2011-10-31
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： KAJIWARA RYOICHI , MOTOWAKI NARIHISA , MATSUYOSHI SATOSHI
IPC分类号： H01L21/60 , H01L21/52 , H01L23/48
CPC分类号： H01L24/01 , H01L24/73 , H01L2224/29006 , H01L2224/32013 , H01L2224/45124 , H01L2224/48091 , H01L2224/48472 , H01L2224/73265 , H01L2224/83192 , H01L2224/8384 , H01L2924/15787 , H01L2924/203 , H01L2924/3025 , H01L2924/351 , H01L2924/00014 , H01L2924/00 , H01L2924/0002
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device capable of preventing an upper or lower electrode from short-circuiting and securing excellent bonding reliability even under a high temperature environment.SOLUTION: A semiconductor device 300 comprises a semiconductor pellet 1, an insulating sheet 7 bonded to one surface of the semiconductor pellet 1, and a metal plate 13 bonded to the other surface of the semiconductor pellet. The insulating sheet protrudes from an outer periphery of the semiconductor pellet. The other surface of a semiconductor element and the metal plate are connected via a sintered silver layer 17. The sintered silver layer is bonded to cover the other surface and a side surface part of the semiconductor pellet.
摘要翻译：要解决的问题：提供即使在高温环境下也能够防止上电极或下电极短路并确保优异的接合可靠性的半导体器件。解决方案：半导体器件300包括半导体芯片1，接合到半导体芯片1的一个表面的绝缘片7和接合到半导体芯片的另一个表面的金属板13。绝缘片从半导体芯片的外周突出。半导体元件的另一个表面和金属板通过烧结银层17连接。烧结的银层被结合以覆盖半导体芯片的另一个表面和侧表面部分。版权所有（C）2013，JPO＆INPIT

2. 发明专利

JP2005150535A Electronic component 审中-公开
标题翻译：电子元件
公开(公告)号：JP2005150535A
公开(公告)日：2005-06-09
申请号：JP2003388222
申请日：2003-11-18
申请人： Hitachi Cable Ltd , Hitachi Ltd , 日立電線株式会社 , 株式会社日立製作所
发明人： OGINO MASAHIKO , SATO TOSHIYA , HOJO BOURO , MOTOWAKI NARIHISA , AMO SATORU
IPC分类号： H05K3/46
摘要： PROBLEM TO BE SOLVED: To provide an electronic component without the missing or failure of plating wiring by surely forming a power feeding film for electric plating even when wiring patterns are densely arranged with the large number of layers. SOLUTION: This electronic component with the structure of lamination is configured of a substrate 1, wiring layers, insulating layers 9, 12, 15 and 18 and external connecting terminals, wherein the wiring layers and the insulating layers are alternately formed on the substrate 1, and only a portion of the insulating layer terminals 9, 12, 15 and 18 is formed with at least one inclined structure for electric plating power supply. The number of the wiring layers and the insulating layers is piled up, and even when the ends of the insulating layers are shaped so as to be steep, a power supply line can be secured. As a result, even when the number of lamination is increased, the wiring layers can be surely formed, and the electronic component without wiring missing can be provided. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：即使当布线图案以大量层压密布置时，通过确保形成用于电镀的供电膜来提供电子部件而不会出现电镀布线的缺失或故障。解决方案：具有层叠结构的电子部件由基板1，布线层，绝缘层9,12,15和18以及外部连接端子构成，其中布线层和绝缘层交替地形成在基板1，并且只有一部分绝缘层端子9,12,15和18形成有用于电镀电源的至少一个倾斜结构。堆叠布线层和绝缘层的数量，即使当绝缘层的端部成形为陡峭时，也可以确保电源线。结果，即使当层叠数量增加时，可以可靠地形成布线层，并且可以提供没有布线的电子部件。版权所有（C）2005，JPO＆NCIPI

3. 发明专利

JP2004288784A Nano printing apparatus and microstructure transfer method 有权
公开(公告)号：JP2004288784A
公开(公告)日：2004-10-14
申请号：JP2003077318
申请日：2003-03-20
申请人： Hitachi Industries Co Ltd , Hitachi Ltd , 株式会社日立インダストリイズ , 株式会社日立製作所
发明人： MOTOWAKI NARIHISA , MIYAUCHI AKIHIRO , OGINO MASAHIKO , KUWABARA KOSUKE
IPC分类号： B29C59/02 , G11B5/84 , H01L21/027
CPC分类号： B29C43/52 , B29C33/02 , B29C43/021 , B29C2043/025
摘要： PROBLEM TO BE SOLVED: To improve the throughput by shortening a cycle of temperature rising and cooling in a nano printing method of a pattern transfer technique for forming a structure of a micro shape.
SOLUTION: A nano printing apparatus heats and pressurizes a substrate and the stamper having fine unevenness on the surface to form the microstructure on the substrate. The nano printing apparatus includes a heat insulation structure having the reduced sectional area of a part for holding the substrate impressed surface of the stamper. A method for transferring the microstructure uses the nano printing apparatus.
COPYRIGHT: (C)2005,JPO&NCIPI

4. 发明专利

JP2003319097A System and apparatus for two-screen-linked image distribution 审中-公开
标题翻译：用于两屏连接图像分配的系统和设备
公开(公告)号：JP2003319097A
公开(公告)日：2003-11-07
申请号：JP2002121638
申请日：2002-04-24
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： SUZUKI YOSHINORI , MOTOWAKI NARIHISA , HOSHINO TAKASHI , NAKADA JUNJI , AKAI HIROSHI
IPC分类号： H04N5/765 , H04B7/26 , H04M11/08 , H04N5/92 , H04N5/93 , H04N7/173 , H04N21/2365 , H04W4/18 , H04W92/08 , H04Q7/38
摘要： PROBLEM TO BE SOLVED: To provide a service utilizing a two-screen configuration, employing a terminal to which the data processing is applied. SOLUTION: To provide different services to a monitor of a portable terminal while a large screen display apparatus is connected, a means is provided for receiving 2 kinds of media data multiplexed to one data at the portable terminal to output them at two display apparatus. Additionally, a means is provided for receiving 2 kinds of mutually linking data by different terminals to display a service screen in a linked fashion. COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：使用应用了数据处理的终端的双屏配置来提供服务。解决方案：为了在连接大屏幕显示装置的同时向便携式终端的监视器提供不同的服务，提供了一种装置，用于接收在便携式终端上多路复用到一个数据的2种媒体数据，以便在两个显示器仪器。此外，提供了一种用于由不同终端接收2种相互链接的数据的装置，以连接的方式显示服务屏幕。版权所有（C）2004，JPO

5. 发明专利

JP2001308667A LC FILTER 失效
公开(公告)号：JP2001308667A
公开(公告)日：2001-11-02
申请号：JP2000127623
申请日：2000-04-24
申请人： HITACHI LTD
发明人： MOTOWAKI NARIHISA , AKAMINE HITOSHI , WATABIKI SEIJI , NAMATAME TOSHIHIDE , NAGAI AKIRA , AKABOSHI HARUO
IPC分类号： H01F27/00 , H01G4/33 , H01G4/40 , H03H7/01
摘要： PROBLEM TO BE SOLVED: To provide a laminated LC filter which is small in dielectric loss, high in production stability and low in noise generation, and a small size and low noise chip element using the LC filter, and further a small size and low cost module mounted with the chip applicable to high frequencies. SOLUTION: An inductor layer 2 provided with an inductor 7, an organic insulating material layer 3, a capacitor layer 4 provided with capacitor 6, and a low dielectric layer 5 are laminated in this order on an insulating substrate 1. The inductor 7 is connected with the capacitor 6 by wiring 8. The low dielectric layer 5 is provided with an external terminal 9.

6. 发明专利

JPH08293403A MANUFACTURE OF VOLTAGE NONLINEAR RESISTOR ELEMENT 失效
公开(公告)号：JPH08293403A
公开(公告)日：1996-11-05
申请号：JP9923195
申请日：1995-04-25
申请人： HITACHI LTD
发明人： TANAKA SHIGERU , YAMADA SEIICHI , TAKAHASHI KEN , MOTOWAKI NARIHISA , SHOJI MORITAKA
IPC分类号： C04B35/453 , C04B35/64 , H01C7/10
摘要： PURPOSE: To reduce dispersion in the characteristics of each element or each lot by placing ZnO moldings containing no Bi components and a predetermined amount of a mass of Bi2 O3 at a position not directly touching the ZnO in a sintering sagger and then giving heat treatment. CONSTITUTION: ZnO moldings 2 containing no Bi component (Mn oxide, Co oxide and other sub-additional components are contained) and a crucible 1 located at a position not directly touching said ZnO which contains a predetermined amount of a mass of Bi2 O3 are put in a sintering sagger made of well known alumina, magnesia and zirconia. And they are heat-treated at a predetermined temperature (at a sintering temperature creating a relative density of a voltage nonlinear resistor element finally produced which is higher than 90% of the theoretical density). Or instead of the ZnO moldings 2, the moldings 2 are heat-treated in advance and a precursor whose relative density is adjusted to less than 80% of the theoretical density is used. The sintering temperature is desired to be higher than 1000 deg.C and not exceeding 1350 deg.C. By doing this, dispersion in electrical characteristics can be reduced.

7. 发明专利

JP2011249257A Method of connecting sintered silver paste material and semiconductor chip 有权
标题翻译：连接烧结银浆料和半导体芯片的方法
公开(公告)号：JP2011249257A
公开(公告)日：2011-12-08
申请号：JP2010123774
申请日：2010-05-31
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： KAJIWARA RYOICHI , MOTOWAKI NARIHISA , ASAUMI YUSUKE
IPC分类号： H01B1/22 , B22F1/00 , B22F1/02 , H01B1/00 , H01L21/52
CPC分类号： H01B1/02 , B22F3/22 , B22F2998/00 , B22F2998/10 , B23K1/0016 , B23K1/206 , B23K2201/40 , C22C1/0466 , H01B1/22 , H01L23/49513 , H01L23/4952 , H01L23/49582 , H01L24/05 , H01L24/29 , H01L24/32 , H01L24/45 , H01L24/48 , H01L24/73 , H01L24/83 , H01L24/85 , H01L2224/04026 , H01L2224/04042 , H01L2224/05644 , H01L2224/0603 , H01L2224/27332 , H01L2224/29339 , H01L2224/32245 , H01L2224/45014 , H01L2224/45124 , H01L2224/48091 , H01L2224/48247 , H01L2224/48724 , H01L2224/48744 , H01L2224/73265 , H01L2224/83055 , H01L2224/83065 , H01L2224/83097 , H01L2224/83192 , H01L2224/83455 , H01L2224/8384 , H01L2224/8392 , H01L2224/83951 , H01L2224/83986 , H01L2224/85205 , H01L2224/92247 , H01L2924/00011 , H01L2924/01006 , H01L2924/01012 , H01L2924/01013 , H01L2924/01014 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01042 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/0665 , H01L2924/10253 , H01L2924/12044 , H01L2924/15747 , H01L2924/181 , H01L2924/00014 , B22F3/10 , B22F1/02 , H01L2924/00012 , H01L2924/00 , H01L2224/2919 , H01L2224/29101 , H01L2924/3512 , H01L2224/83205
摘要： PROBLEM TO BE SOLVED: To provide the composition of a sintered silver paste metal-joined at a low temperature that can be metal-joined by not only a noble metal member but also a non-noble metal member with high strength, and a connection method by which a junction with high strength is obtained.SOLUTION: An organic silver complex solution which is prone to heat decomposition regardless of atmosphere is added in a sintered silver paste, and before the step of sintering silver particles a non-noble metal surface is Ag metallized under the nonoxidizing atmosphere, after which the silver particles are sintered under the oxidizing atmosphere.
摘要翻译：要解决的问题：提供一种低温金属接合的烧结银膏的组合物，该组合物不仅可以通过贵金属构件而且可以通过高强度的非贵金属构件进行金属接合，以及获得具有高强度的结的连接方法。解决方案：在烧结银膏中加入容易发生热分解的有机银络合物溶液，在烧结银颗粒之前，在非氧化性气氛下，将非贵金属表面Ag镀金属，之后，在银颗粒在氧化气氛下烧结。版权所有（C）2012，JPO＆INPIT

8. 发明专利

JP2011077225A Semiconductor device and connection structure, and method for manufacturing the semiconductor device 有权
标题翻译：半导体器件和连接结构以及制造半导体器件的方法
公开(公告)号：JP2011077225A
公开(公告)日：2011-04-14
申请号：JP2009225906
申请日：2009-09-30
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： KAJIWARA RYOICHI , ITO KAZUTOSHI , MOTOWAKI NARIHISA , MATSUYOSHI SATOSHI , HIRAMITSU SHINJI
IPC分类号： H01L21/52 , B23K35/14 , B23K35/22
CPC分类号： H01L24/01 , H01L2224/8384 , H01L2924/351 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a low-cost mounting structure excellent in thermal/electrical properties, temperature cycle reliability and high temperature resistance while using a lead-free material having a high melting point since thermal stress in the shearing direction is high wherein the stress is generated in a chip due to a thermal expansion difference, thereby producing a chip crack when a lead-free hard high-temperature solder or high-strength nano Ag is used for joining, and accordingly lead free is not achieved in a semiconductor device required to have a heat resistance of 250°C, in a mounting structure where a semiconductor chip is sandwiched with Cu electrodes. SOLUTION: In a structure of a semiconductor device, a low thermal expansion plate is inserted between a semiconductor chip and each Cu electrode, and each chip side is joined via a high-temperature lead-free solder while each Cu electrode side is joined via a porous Ag layer having a porosity of 20-70%. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：解决的问题：为了提供一种使用具有高熔点的无铅材料，因为在剪切方向上的热应力是热/电特性，温度循环可靠性和耐高温性优异的低成本安装结构，高，其中由于热膨胀差而在芯片中产生应力，从而当使用无铅硬质高温焊料或高强度纳米Ag进行接合时产生芯片裂纹，因此无法实现无铅在半导体芯片夹在Cu电极的安装结构中，要求具有250℃的耐热性的半导体器件。解决方案：在半导体器件的结构中，在半导体芯片和每个Cu电极之间插入低热膨胀板，并且通过高温无铅焊料将每个芯片侧接合，而每个Cu电极侧为通过孔隙率为20-70％的多孔Ag层连接。版权所有（C）2011，JPO＆INPIT

9. 发明专利

JP2009182159A Metal/resin adhesion structure and resin sealed semiconductor device, and its production process 有权
标题翻译：金属/树脂粘合结构和树脂密封半导体器件及其生产工艺
公开(公告)号：JP2009182159A
公开(公告)日：2009-08-13
申请号：JP2008020045
申请日：2008-01-31
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： KAJIWARA RYOICHI , MOTOWAKI NARIHISA , ITO KAZUTOSHI , HOZOJI HIROYUKI
IPC分类号： H01L21/56 , H01L23/13 , H01L23/29 , H01L23/31 , H01L23/50
CPC分类号： H01L23/49582 , H01L21/56 , H01L23/3107 , H01L23/49586 , H01L24/29 , H01L24/37 , H01L24/40 , H01L24/45 , H01L24/48 , H01L2224/29 , H01L2224/29101 , H01L2224/29116 , H01L2224/2919 , H01L2224/29298 , H01L2224/32245 , H01L2224/37124 , H01L2224/37147 , H01L2224/40095 , H01L2224/40245 , H01L2224/45124 , H01L2224/48091 , H01L2224/48095 , H01L2224/48247 , H01L2224/48472 , H01L2224/48699 , H01L2224/73265 , H01L2224/83801 , H01L2224/8384 , H01L2224/84801 , H01L2224/92247 , H01L2924/00011 , H01L2924/00013 , H01L2924/01005 , H01L2924/01006 , H01L2924/01012 , H01L2924/01014 , H01L2924/01018 , H01L2924/01022 , H01L2924/01023 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/0104 , H01L2924/01047 , H01L2924/01073 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01327 , H01L2924/014 , H01L2924/0665 , H01L2924/10253 , H01L2924/12044 , H01L2924/15747 , H01L2924/15787 , H01L2924/181 , H01L2924/351 , H05K1/0306 , H05K1/053 , H05K1/056 , H05K3/28 , H05K2201/0175 , H05K2201/0195 , H05K2203/121 , Y10T428/12493 , Y10T428/12868 , H01L2924/00014 , H01L2924/00 , H01L2924/3512 , H01L2224/29099 , H01L2224/29199 , H01L2224/29299 , H01L2224/2929 , H01L2924/00012
摘要： PROBLEM TO BE SOLVED: To achieve high reliability of the semiconductor device by preventing exfoliation of the resin by solving the problem of drastic decline of the temperature cycle life because of interfacial exfoliation of a metal member such as a lead frame and a sealing resin in a resin sealed semiconductor device. SOLUTION: A structure with an oxide film having minute ruggedness on the surface formed by about a 5-600 nm thickness is formed at the interface of a metal member and a sealing resin of the structure by applying an organometallic compound solution of metal species such as Zn and Zr having a stronger coupling strength with oxygen compared with Ni and Cu onto a semiconductor assembly structure, and applying a heating/baking process in an oxidation atmosphere. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：解决的问题为了通过解决由于诸如引线框架的金属构件和密封件的界面剥离而导致的温度循环寿命急剧下降的问题，通过防止树脂的剥离来实现半导体器件的高可靠性树脂密封的半导体器件。解决方案：通过施加金属的有机金属化合物溶液，在金属构件和结构的密封树脂的界面处形成具有在约5-600nm厚度形成的表面上具有微小凹凸的氧化物膜的结构与Ni和Cu相比，具有比氧更强的结合强度的Zn和Zr的物质到半导体组件结构上，并且在氧化气氛中进行加热/烘烤过程。版权所有（C）2009，JPO＆INPIT

10. 发明专利

JP2004288804A Nano-printer and microstructure transfer method 有权
公开(公告)号：JP2004288804A
公开(公告)日：2004-10-14
申请号：JP2003077927
申请日：2003-03-20
申请人： Hitachi Industries Co Ltd , Hitachi Ltd , 株式会社日立インダストリイズ , 株式会社日立製作所
发明人： OGINO MASAHIKO , MIYAUCHI AKIHIRO , MOTOWAKI NARIHISA , KUWABARA KOSUKE
IPC分类号： G03F7/20 , B29C35/08 , B29C59/00 , B29C59/02 , H01L21/027
CPC分类号： B29C59/002 , B29C59/022 , B29C59/026 , B29C2035/0827 , B29C2059/023 , B29K2033/12 , Y10S977/887
摘要： PROBLEM TO BE SOLVED: To perform transfer with higher precision in a nano-printing method.
SOLUTION: A nano-printer for heating and pressing a substrate and a stamper with micro protrusions and recesses formed on the surface, through a shock absorbing material in order to form a microstructure on the substrate, is characterised by holding a plurality of shock absorbing materials on a carrying film and having a mechanism for replacing the shock absorbing materials sequentially during hot press. A microstructure transfer method employing the nano-printer is also provided.
COPYRIGHT: (C)2005,JPO&NCIPI

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