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    • 4. 发明专利
    • Pressure sensor unit
    • 压力传感器单元
    • JP2005098976A
    • 2005-04-14
    • JP2004130368
    • 2004-04-26
    • Fuji Electric Device Technology Co Ltd富士電機デバイステクノロジー株式会社
    • KAMIYANAGI KATSUMICHISHINODA SHIGERUASHINO KIMIYASUSAITO KAZUNORI
    • G01L19/14G01L9/00G01L9/04G01L19/00H01L29/84
    • G01L19/0084G01L19/0038G01L19/143H01L2224/48091H01L2224/73265H01L2924/00014
    • PROBLEM TO BE SOLVED: To reduce a cost, to enhance reliability over a long period, and to enhance the precision and reliability of a measuring signal, in a pressure sensor unit. SOLUTION: A pressure sensor chip 41 including therein a diaphragm 45, a piezoelectric resistance element, an amplification circuit and various kinds of regulation circuits is joined to a pedestal member 42 to face the diaphragm 45 to a through hole 46 of the pedestal member 42. The pedestal member 42 and a metal pipe member 43 are joined to communicate the through hole 46 with a through hole 48 thereof. A metal member 43 is bonded to a resin case 44, a signal terminal 58 of the resin case 44 is electrically connected to the pressure sensor chip 41 by a wireless bonding 59, so as to serve as a pressure sensor cell 100. An O-ring is attached to the metal pipe member 43, and the resin case 44 is pressed from its upper side to fix the pressure sensor cell 100 onto an oil seal block or the like. Alternatively, the pressure sensor cell 100 is fixed onto a member having a screw part by calking structure, and the screw part is screwed in a block or the like. COPYRIGHT: (C)2005,JPO&NCIPI
    • 要解决的问题:在压力传感器单元中,为了降低成本,提高长时间的可靠性,提高测量信号的精度和可靠性。 解决方案:包括隔膜45,压电电阻元件,放大电路和各种调节电路的压力传感器芯片41接合到基座构件42,以将隔膜45面向基座的通孔46 基座构件42和金属管构件43接合以使通孔46与其通孔48连通。 金属部件43与树脂外壳44接合,树脂外壳44的信号端子58通过无线接合59与压力传感器芯片41电连接,作为压力传感器单元100。 环附接到金属管构件43,并且树脂壳体44从其上侧被按压以将压力传感器单元100固定在油封块等上。 或者,压力传感器单元100通过铆接结构固定在具有螺纹部分的构件上,并且将螺钉部分拧入块等中。 版权所有(C)2005,JPO&NCIPI
    • 5. 发明专利
    • Method for manufacturing semiconductor device
    • 制造半导体器件的方法
    • JP2009294044A
    • 2009-12-17
    • JP2008147209
    • 2008-06-04
    • Fuji Electric Device Technology Co Ltd富士電機デバイステクノロジー株式会社
    • SAITO KAZUNORINISHIKAWA MUTSUO
    • G01L9/00H01L21/66H01L29/84
    • PROBLEM TO BE SOLVED: To provide a method for manufacturing semiconductor devices capable of effectively selecting or removing a semiconductor device having a pinhole in a gold film to the semiconductor device including a semiconductor pressure sensor area wherein a lower-layer electrode film is prevented from being corroded by forming the gold film on the top surface of a layered metal film having an aluminum or aluminum alloy electrode film at its lower layer.
      SOLUTION: In the method for manufacturing the semiconductor devices has a process of forming a corrosion-resistant dielectric film 4 on the surface of a semiconductor substrate 100a excluding its pad part, and subsequently forming the gold film 6 on the aluminum electrode film 3 which is disposed on the surface of the pad part, through a metal film 5 for improving the degree of adhesion and preventing any mutual diffusion, in order to form the layered metal film, a process is prepared for immersing the semiconductor substrate 100a in an etching solution of aluminum after the process of forming the layered metal film.
      COPYRIGHT: (C)2010,JPO&INPIT
    • 解决的问题:提供一种半导体器件的制造方法,其能够有效地选择或去除具有金膜的针孔的半导体器件到半导体器件,该半导体器件包括半导体压力传感器区域,其中下层电极膜为 通过在其下层具有铝或铝合金电极膜的层状金属膜的顶面上形成金膜而防止被腐蚀。 解决方案:在半导体器件的制造方法中,具有在除了焊盘部分之外的半导体基板100a的表面上形成耐蚀电介质膜4的工序,随后在铝电极膜上形成金膜6 3,其通过金属膜5设置在焊盘部分的表面上,用于提高粘合度并防止任何相互扩散,为了形成层状金属膜,准备将半导体衬底100a浸入 在形成层状金属膜的过程之后蚀刻铝的溶液。 版权所有(C)2010,JPO&INPIT
    • 6. 发明专利
    • Pressure sensor apparatus and pressure sensor housing
    • 压力传感器装置和压力传感器外壳
    • JP2008122182A
    • 2008-05-29
    • JP2006305261
    • 2006-11-10
    • Fuji Electric Device Technology Co LtdHitachi Ltd富士電機デバイステクノロジー株式会社株式会社日立製作所
    • KAMINAGA TOSHIAKIKUBO ATSUSHISAITO KAZUNORIASHINO KIMIYASUKAMIYANAGI KATSUMICHI
    • G01L9/00H01L29/84
    • G01L19/0038G01L19/0627G01L19/141
    • PROBLEM TO BE SOLVED: To provide a pressure sensor apparatus and a pressure sensor housing capable of preventing the occurrence of frozen moisture, swelling of a gel-like coating member and damage to a pressure sensor element, without causing accumulation of moisture, oil, gasoline or the like on a protective wall even when the pressure sensor apparatus is disposed obliquely caused by the layout etc.
      SOLUTION: A pressure sensor apparatus 100A or a pressure sensor housing 100B comprises a pressure detection chamber 102, into which a gas to be measured for pressuring is introduced; a pressure sensor element 201 for detecting the pressure of the gas; and a protective wall 108 for preventing infiltration of foreign matters into the pressure detection chamber 102. The protective wall 108 has an inclined surface 108a at an angle θ
      8a , such that a second angle θ
      2 sloping downward is retained in between the horizontal line HL and the inclined surface 108a, when the pressure sensor apparatus 100A is disposed obliquely by a first angle θ
      1 , with respect to the horizontal line HL. Another inclined surface 102a is formed on the inner periphery wall of the pressure detection chamber 102, as necessary.
      COPYRIGHT: (C)2008,JPO&INPIT
    • 解决方案:提供一种压力传感器装置和压力传感器壳体,其能够防止冻结湿气的发生,凝胶状涂层部件的膨胀和压力传感器元件的损坏而不会引起水分积聚, 油,汽油等,即使当压力传感器装置由布置等倾斜地布置时。解决方案:压力传感器装置100A或压力传感器壳体100B包括压力检测室102,压力检测室 引入要测量的用于加压的气体; 用于检测气体压力的压力传感器元件201; 以及用于防止异物渗透到压力检测室102中的保护壁108.保护壁108具有角度θ<8a>的倾斜表面108a,使得第二角度θ< 当压力传感器装置100A相对于水平线HL倾斜设置第一角度θ 1 时,向下倾斜的保持在水平线HL和倾斜面108a之间 。 根据需要,在压力检测室102的内周壁上形成另一倾斜面102a。 版权所有(C)2008,JPO&INPIT
    • 9. 发明专利
    • Temperature-sensor-integrated pressure sensor
    • 温度传感器一体式压力传感器
    • JP2008139298A
    • 2008-06-19
    • JP2007291778
    • 2007-11-09
    • Fuji Electric Device Technology Co LtdHitachi Ltd富士電機デバイステクノロジー株式会社株式会社日立製作所
    • KAMINAGA TOSHIAKIKUBO ATSUSHISAITO KAZUNORIASHINO KIMIYASUKAMIYANAGI KATSUMICHI
    • G01K1/14G01D21/02G01K13/02G01L19/00
    • G01K13/02G01K1/14G01K1/18G01K2205/02G01L19/0092G01L23/24
    • PROBLEM TO BE SOLVED: To make it possible to obtain a desired response speed of a temperature sensor without depending on the tilt angle at which a temperature-sensor-integrated pressure sensor is tilted when installed.
      SOLUTION: When a temperature-sensor-integrated pressure sensor including a temperature sensor element and a pressure sensor element is installed on a target object at a tilt angle of θ
      rg to an ideal installation location where the central axis of the main body of the temperature sensor element is orthogonal to the direction in which gas passes through a measuring object, the tilt angle θ
      pos at which the main body of the element is tilted to the original central axis of the main body of the element in this sensor is set in accordance with the following formula: (θ
      rq -θ
      allow )≤θ
      pos ≤(θ
      rq +θ
      allow ), where θ
      allow is a permissible angle from the gas passing direction orthogonal to the central axis of the main body of the element at which a permissible response speed of the temperature sensor element can be obtained.
      COPYRIGHT: (C)2008,JPO&INPIT
    • 要解决的问题:为了使得可以在不依赖于安装温度传感器集成压力传感器倾斜的倾斜角度的情况下获得温度传感器的期望响应速度。 解决方案:将包括温度传感器元件和压力传感器元件的温度传感器集成的压力传感器以θ rg 的倾斜角度安装在目标物体上,到理想的安装位置, 温度传感器元件的主体的中心轴线与气体通过测量对象的方向正交,元件的主体倾斜到的倾斜角θ 该传感器中的元件的主体的原始中心轴根据以下公式设定:(θ rq 允许)≤θ< / SB>≤(θ rq 允许),其中θ允许是从与中心轴正交的气体通过方向的允许角度 可以获得温度传感器元件的允许响应速度的元件的主体。 版权所有(C)2008,JPO&INPIT
    • 10. 发明专利
    • Method and apparatus for adjusting property of semiconductor pressure sensor
    • 用于调整半导体压力传感器性能的方法和装置
    • JP2009145063A
    • 2009-07-02
    • JP2007319624
    • 2007-12-11
    • Fuji Electric Device Technology Co Ltd富士電機デバイステクノロジー株式会社
    • KURIMATA SHOJIROSAITO KAZUNORISHINODA SHIGERU
    • G01L27/00
    • PROBLEM TO BE SOLVED: To provide a method and an apparatus for adjusting properties of a semiconductor pressure sensor, the method and apparatus for properly adjusting the properties by reducing the effect of the physical stress on a gauge sensor when adjusting the properties of the semiconductor pressure sensor for use in measuring relative or absolute pressure. SOLUTION: In the method for adjusting properties of a semiconductor pressure sensor, a fixture 26a includes a recess for storing a resin case part of an assembled resin cell 10 with a lead terminal integrally assembled. While the resin case part is placed in the recess, a probe 25a for inputting and outputting electrical signals is brought into contact with the lead terminal 7. A movable fixture 22 includes a seal material 23 for sealing a space between one main surface and the other surface of the sensor chip, and a pressure control hole for applying any pressure. A pressure reference chamber is formed by joining the movable fixture 22 to the fixture 26a and introducing required pressure through the pressure control hole, and thereby the properties are adjusted. COPYRIGHT: (C)2009,JPO&INPIT
    • 要解决的问题:提供一种用于调节半导体压力传感器的性质的方法和装置,该方法和装置通过在调节特性时减小测量传感器上的物理应力的影响来适当地调节特性 用于测量相对压力或绝对压力的半导体压力传感器。 解决方案:在用于调整半导体压力传感器的性质的方法中,固定件26a包括用于存储组装的树脂电池10的树脂壳体部分的凹部,引线端子整体地组装。 当树脂壳体部分放置在凹槽中时,用于输入和输出电信号的探针25a与引线端子7接触。可移动夹具22包括用于密封一个主表面和另一个主表面之间的空间的密封材料23 传感器芯片的表面和用于施加任何压力的压力控制孔。 通过将可移动夹具22连接到夹具26a并通过压力控制孔引入所需的压力而形成压力参考室,从而调整其性能。 版权所有(C)2009,JPO&INPIT