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1. 发明专利

JP2007263681A Pressure detection device and intake path of internal combustion engine 有权
标题翻译：内燃机的压力检测装置和进气道
公开(公告)号：JP2007263681A
公开(公告)日：2007-10-11
申请号：JP2006087974
申请日：2006-03-28
申请人： Fuji Electric Device Technology Co Ltd , 富士電機デバイステクノロジー株式会社
发明人： SAITO KAZUNORI , NISHIKAWA MUTSUO , KAMIYANAGI KATSUMICHI
IPC分类号： G01L23/24 , F02D35/00 , H01L29/84
CPC分类号： H01L2224/48091 , H01L2224/73265 , H01L2924/00014
摘要： PROBLEM TO BE SOLVED: To provide a surface pressurizing type pressure detection device and an intake path for an internal combustion engine which can be manufactured economically and with high precision and are resistant to the influence of charged gasoline.
SOLUTION: The pressure detection device is provided with, in a pressure introducing path which is connected in communication with the downstream side of a throttle valve of the intake path of the internal combustion engine, a floating gate of an EPROM formed on a semiconductor substrate positioned with respect to the pressure introducing path through an insulting film. A metallic shield electrode is provided within the insulating film on the floating gate.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于内燃机的表面加压型压力检测装置和进气通道，其可以经济地且高精度地制造并且抵抗带电汽油的影响。解决方案：压力检测装置在与内燃机的进气通道的节流阀的下游侧连通的压力引入路径中设置有形成在内燃机的进气路径的EPROM的浮动门半导体衬底通过绝缘膜相对于压力引入路径定位。金属屏蔽电极设置在浮动栅极上的绝缘膜内。版权所有（C）2008，JPO＆INPIT

2. 发明专利

JP2009038115A Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：JP2009038115A
公开(公告)日：2009-02-19
申请号：JP2007199394
申请日：2007-07-31
申请人： Fuji Electric Device Technology Co Ltd , 富士電機デバイステクノロジー株式会社
发明人： NISHIKAWA MUTSUO , IKOMA KAZUHIKO
IPC分类号： H01L23/00
CPC分类号： H01L23/544 , H01L23/3157 , H01L2223/5442 , H01L2223/54426 , H01L2223/54473 , H01L2924/0002 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To precisely recognize an alignment marker even if a semiconductor device tilts or even if a passivation film varies in thickness, and to precisely recognize the alignment marker clearly and discriminatingly from contact holes dispersedly formed at a circuit.
SOLUTION: Many openings 5 are formed at an interlayer insulating film 4 whose surface is covered with a metal film 6 to make the surface of the metal film 6 uneven, thereby scattering reflected light. The openings 5 are nearly as large as contact holes of an element, and small enough not to be recognized by an image recognition device. The metal film 6 is large enough to be recognized by the image recognition device.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：即使半导体器件倾斜或即使钝化膜的厚度变化也能够精确地识别对准标记，并且能够清楚地识别对准标记并且从电极上分散形成的接触孔识别出对准标记。解决方案：在表面被金属膜6覆盖的层间绝缘膜4处形成许多开口5，以使金属膜6的表面不均匀，从而散射反射光。开口5几乎与元件的接触孔一样大，并且足够小，不能被图像识别装置识别。金属膜6足够大以被图像识别装置识别。版权所有（C）2009，JPO＆INPIT

3. 发明专利

JP2007312368A Signal amplifier circuit 审中-公开
标题翻译：信号放大器电路
公开(公告)号：JP2007312368A
公开(公告)日：2007-11-29
申请号：JP2007106644
申请日：2007-04-16
申请人： Fuji Electric Device Technology Co Ltd , 富士電機デバイステクノロジー株式会社
发明人： NISHIKAWA MUTSUO , KAMIYANAGI KATSUMICHI , UEMATSU KATSUYUKI , SASAYA YUKO
IPC分类号： H03F1/30 , H03F3/68 , H03G11/00
摘要： PROBLEM TO BE SOLVED: To provide a signal amplifier circuit wherein a dispersion in a saturation voltage being an output characteristic is small by making the effect of the manufacturing tolerance and the temperature dependence of each circuit component hardly received. SOLUTION: In a lower limit voltage limiting circuit 20, a noninverting input terminal of an operational amplifier 21 is connected to a Vref1 terminal 50 and a Vout terminal 02 is connected to an inverting input terminal of the operational amplifier 21. Further, an anode terminal of a diode 22 is connected to an output terminal of the operational amplifier 21 and a cathode terminal of the diode 22 is connected to the Vout terminal 02. In an upper limit voltage limiting circuit 30, a noninverting input terminal of an operational amplifier 31 is connected to a Vref2 terminal 60 and the Vout terminal 02 is connected to an inverting input terminal of the operational amplifier 31. Further, a cathode terminal of a diode 32 is connected to an output terminal of the operational amplifier 31 and an anode terminal of the diode 32 is connected to the Vout terminal 02. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种信号放大器电路，其中通过使得几乎不接收每个电路部件的制造公差和温度依赖性的影响，输出特性的饱和电压的色散小。解决方案：在下限电压限制电路20中，运算放大器21的同相输入端连接到Vref1端子50，Vout端子02连接到运算放大器21的反相输入端。而且，二极管22的阳极端子连接到运算放大器21的输出端，并且二极管22的阴极端子连接到Vout端子02.在上限电压限制电路30中，操作的同相输入端子放大器31连接到Vref2端子60，并且Vout端子02连接到运算放大器31的反相输入端。另外，二极管32的阴极端子连接到运算放大器31的输出端，阳极二极管32的端子连接到Vout端子02.版权所有（C）2008，JPO＆INPIT

4. 发明专利

JP2009294044A Method for manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：JP2009294044A
公开(公告)日：2009-12-17
申请号：JP2008147209
申请日：2008-06-04
申请人： Fuji Electric Device Technology Co Ltd , 富士電機デバイステクノロジー株式会社
发明人： SAITO KAZUNORI , NISHIKAWA MUTSUO
IPC分类号： G01L9/00 , H01L21/66 , H01L29/84
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing semiconductor devices capable of effectively selecting or removing a semiconductor device having a pinhole in a gold film to the semiconductor device including a semiconductor pressure sensor area wherein a lower-layer electrode film is prevented from being corroded by forming the gold film on the top surface of a layered metal film having an aluminum or aluminum alloy electrode film at its lower layer.
SOLUTION: In the method for manufacturing the semiconductor devices has a process of forming a corrosion-resistant dielectric film 4 on the surface of a semiconductor substrate 100a excluding its pad part, and subsequently forming the gold film 6 on the aluminum electrode film 3 which is disposed on the surface of the pad part, through a metal film 5 for improving the degree of adhesion and preventing any mutual diffusion, in order to form the layered metal film, a process is prepared for immersing the semiconductor substrate 100a in an etching solution of aluminum after the process of forming the layered metal film.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：解决的问题：提供一种半导体器件的制造方法，其能够有效地选择或去除具有金膜的针孔的半导体器件到半导体器件，该半导体器件包括半导体压力传感器区域，其中下层电极膜为通过在其下层具有铝或铝合金电极膜的层状金属膜的顶面上形成金膜而防止被腐蚀。解决方案：在半导体器件的制造方法中，具有在除了焊盘部分之外的半导体基板100a的表面上形成耐蚀电介质膜4的工序，随后在铝电极膜上形成金膜6 3，其通过金属膜5设置在焊盘部分的表面上，用于提高粘合度并防止任何相互扩散，为了形成层状金属膜，准备将半导体衬底100a浸入在形成层状金属膜的过程之后蚀刻铝的溶液。版权所有（C）2010，JPO＆INPIT

5. 发明专利

JP2009019973A Semiconductor pressure sensor 有权
标题翻译：半导体压力传感器
公开(公告)号：JP2009019973A
公开(公告)日：2009-01-29
申请号：JP2007182299
申请日：2007-07-11
申请人： Fuji Electric Device Technology Co Ltd , 富士電機デバイステクノロジー株式会社
发明人： KATO HIROBUMI , SHINODA SHIGERU , NISHIKAWA MUTSUO , KAMIYANAGI KATSUMICHI
IPC分类号： G01L9/00 , H01L29/84
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor pressure sensor which does not introduce temperature hysteresis between ambient temperature and a sensor output even when a chip size is reduced while a circuit pattern of the same diaphragm diameter and the same design rule is maintained.
SOLUTION: The semiconductor pressure sensor includes: a sensor area 11a which has a thin-film diaphragm 12a formed by a recessed part provided at the central part of one surface of a p-type semiconductor substrate 13a and includes a pressure gauge 14a which is a p-type area formed in an N-type island area formed on the other surface facing the diaphragm 12a; and a circuit area 10a which is formed in the semiconductor substrate 13a outside the sensor area 11a and includes a circuit for amplifying an electric signal obtained by converting external pressure received by the diaphragm. The circuit area 10a extends within the other surface which is outside the sensor area and faces the diaphragm 12a.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供即使当芯片尺寸减小时也不会在环境温度和传感器输出之间引入温度滞后的半导体压力传感器，而具有相同膜片直径和相同设计规则的电路图案被保持。解决方案：半导体压力传感器包括：传感器区域11a，其具有由设置在p型半导体衬底13a的一个表面的中心部分的凹部形成的薄膜隔膜12a，并且包括压力计14a 其是形成在面向隔膜12a的另一表面上形成的N型岛区域中的p型区域; 以及电路区域10a，其形成在传感器区域11a外部的半导体衬底13a中，并且包括用于放大通过转换由膜片接收的外部压力而获得的电信号的电路。电路区域10a在传感器区域之外的另一表面内延伸并且面向隔膜12a。版权所有（C）2009，JPO＆INPIT

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