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1. 发明专利

JP2003297860A Method of manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：JP2003297860A
公开(公告)日：2003-10-17
申请号：JP2002094650
申请日：2002-03-29
申请人： Fuji Electric Co Ltd , 富士電機株式会社
发明人： MOROZUMI AKIRA , MIYASAKA TADASHI , YAMADA KATSUMI , MOCHIZUKI EIJI
IPC分类号： B23K1/00 , B23K1/008 , B23K1/20 , B23K31/02 , B23K101/40 , H01L21/52 , H01L21/58 , H05K1/03 , H05K3/00 , H05K3/34
CPC分类号： H01L24/83 , B23K1/0016 , B23K1/008 , B23K1/206 , H01L24/32 , H01L24/75 , H01L2224/29111 , H01L2224/32145 , H01L2224/83101 , H01L2224/8319 , H01L2224/8385 , H01L2924/01004 , H01L2924/01006 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01082 , H01L2924/0132 , H01L2924/014 , H01L2924/07802 , H01L2924/10253 , H01L2924/15787 , H01L2924/1579 , H01L2924/3025 , H05K1/0306 , H05K3/0058 , H05K3/341 , H01L2924/3512 , H01L2924/00 , H01L2924/00014
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device having few bubbles in a solder jointing layer by jointing a laminate in which an insulating substrate having a metal circuit plate is laminated on a metal base via a solder layer and a silicon chip is laminated on the substrate via the solder layer by soldering for a short time.
SOLUTION: The metal base, a solder plate, the insulating substrate and the laminate formed of the solder plate and the silicon chip are installed in a pressure-reducing furnace, which is evacuated and made to have a hydrogen atmosphere of positive pressure. Surfaces of respective members in the laminate are reduced. Solder is heated and melted and the furnace is made to have an evacuated atmosphere, and the bubbles in solder are removed. The furnace is made to have a hydrogen atmosphere of positive pressure and a tunnel-like hole caused by the movement of the bubbles in solder is blocked and a uniform solder fillet shape is obtained. Then, it is rapidly quenched and a solder organization is refined. Thus, the creep rate of solder supplied for jointing the insulating substrate and the metal base is improved and the warpage of the metal base is made to speedily return to an original state.
COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：通过将具有金属电路板的绝缘基板经由焊料层和硅芯片层叠在金属基底上的层叠体连接来提供在焊接接合层中具有少量气泡的半导体器件通过焊接在短时间内通过焊料层层压在基板上。
解决方案：将金属基底，焊盘，绝缘基板和由焊料板和硅芯片形成的层叠体安装在减压炉中，该减压炉被抽真空并使其具有正压氢气氛。层压体中各构件的表面减少。将焊料加热熔化，使炉子具有抽真空的气氛，并除去焊料中的气泡。使炉子具有正压的氢气氛，并且阻止由焊料中的气泡的移动引起的隧道状孔，并且获得均匀的焊接圆角形状。然后，它被快速淬火并且焊接组织被精炼。因此，提供用于接合绝缘基板和金属基座的焊料的蠕变速率得到改善，并且金属基底的翘曲被快速地恢复到原始状态。版权所有（C）2004，JPO

2. 发明专利

JPH08265121A OVERCURRENT LIMIT CIRCUIT FOR POWER TRANSISTOR 失效
公开(公告)号：JPH08265121A
公开(公告)日：1996-10-11
申请号：JP6326595
申请日：1995-03-23
申请人： FUJI ELECTRIC CO LTD
发明人： MIYASAKA TADASHI
IPC分类号： H03K17/78 , H02M7/537 , H03K17/08 , H03K17/567
摘要： PURPOSE: To decrease the number of photocouplers required to deliver a control command between a bridge arm and a command circuit via an insulation path when the power transistor(TR) of a bridge circuit is protected against an overcurrent. CONSTITUTION: An overcurrent limit by a current limit circuit 20 with respect to a power TR of, e.g. an arm 12 in one of an arm 11 toward a power supply potential point V and the arm 12 toward a reference potential point E in a bridge circuit 10 is set lower than an overcurrent limit by the current limit circuit 20 with respect to a power TR of the other arm 12. A command circuit 50 providing control commands Ls, Ss to each power TR 1 in the bridge circuit 10 is operated by the same reference potential E as that for the power TR 1 in the arm 12 whose overcurrent limit is selected lower. The control command Ls is delivered to a drive circuit 30 of the arm 11 via a photocoupler in a form of an optical signal and the control command Ss is delivered to the drive circuit 30 of the arm 12 via a photocoupler in a form of an electric signal.

3. 发明专利

JPH06125256A CONTROLLER FOR DOUBLE-GATE TYPE SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH06125256A
公开(公告)日：1994-05-06
申请号：JP8102593
申请日：1993-04-08
申请人： FUJI ELECTRIC CO LTD
发明人： TERASAWA NORIYASU , MIYASAKA TADASHI , NISHIURA AKIRA , NISHIURA SHINJI , SAKURAI KENYA , OTSUKI MASATO
IPC分类号： H01L29/78 , H01L21/336 , H01L27/04 , H03K17/08 , H03K17/56 , H03K17/687 , H01L29/784
摘要： PURPOSE:To provide a controller capable of surely controlling a double-gate type semiconductor device provided with various kinds of superior characteristics such as low switching loss even it is applied to a high frequency by one control signal similarly to a conventional IGBT, etc. CONSTITUTION:The controller 20 comprises a first gate control circuit 21 which supplies the control signal inputted from an input terminal P1 to a gate G1, and a second gate control circuit 22 which supplies the control signal inputted from the input terminal P1 to a gate G2. A delay circuit 31 is installed at the first gate control circuit 21, and an off-signal is supplied to the gate G2, and it is supplied to the gate G1 after a condition is transferred from a thyristor state to a transistor state, which surely stops the double-gate type semiconductor device.

4. 发明专利

JPH05327440A DRIVING DEVICE 失效
公开(公告)号：JPH05327440A
公开(公告)日：1993-12-10
申请号：JP12521492
申请日：1992-05-19
申请人： FUJI ELECTRIC CO LTD
发明人： OGAWA SHOGO , MIYASAKA TADASHI
IPC分类号： H03K17/08
摘要： PURPOSE:To realize the driving device which limits the operation of an IGBT under an overcurrent state to prevent baking of the IGBT or the like in the device capable of driving an IGBT device with an overcurrent limit circuit. CONSTITUTION:A gate voltage VG of an IGBT 2 and a reference voltage V0 are compared by using a comparator 41 forming a comparator circuit 40 and whether or not the IGBT 2 is in the overcurrent state based on the gate voltage VG decreased in the overcurrent state. When the IGBT 2 is discriminated to be in the overcurrent state, an alarm signal is outputted from an alarm output terminal A1 of the driver 30 to exclude a cause to an overcurrent thereby preventing the IGBT 2 from being intermittently operated in the overcurrent state.

5. 发明专利

JPH03183209A DRIVE CIRCUIT FOR VOLTAGE DRIVEN TYPE SEMICONDUCTOR ELEMENT 失效
公开(公告)号：JPH03183209A
公开(公告)日：1991-08-09
申请号：JP27800889
申请日：1989-10-25
申请人： FUJI ELECTRIC CO LTD
发明人： SASAGAWA KIYOAKI , MIKI HIROSHI , MIYASAKA TADASHI
IPC分类号： H02H3/087 , H02H7/12 , H02M1/00 , H03K17/08
摘要： PURPOSE:To suppress initial reverse voltage at the time of over-current cut-off, and to protect an element by monitoring the voltage of the input side main terminal of a voltage driven type semiconductor element, and lowering gradually the voltage while this voltage exceeds a prescribed value and a detecting means operates. CONSTITUTION:A capacitor 20 is charged at first by voltage sources 6, 7 through a resistor 19, and its both ends voltage becomes V1+V2, and since a diode 21 is connected between the positive side terminal of the capacitor 20 and the bases of transistors(TRs) 9,10, usual operation is scarcely influenced. When an overcurrent is detected, the TR 14 becomes conductive, and the charge of the capacitor 20 is discharged through the resistor 18. Then, the voltage of the difference of the both ends voltage of the capacitor 20 and V2 is outputted through the diode 21 and the TR 9. Providing that the resistance values of the resistors 12, 18, 19 are R1, R2, R3, VGE can be made into low voltage required for IGBT 4 to turn off by selecting them so that R1, R3>R2.

6. 发明专利

JPS63275175A POWER TRANSISTOR 失效
公开(公告)号：JPS63275175A
公开(公告)日：1988-11-11
申请号：JP11130587
申请日：1987-05-07
申请人： FUJI ELECTRIC CO LTD
发明人： MIYASAKA TADASHI
IPC分类号： H01L29/73 , H01L21/331 , H01L29/72 , H01L29/732
摘要： PURPOSE:To render the balance of an emitter current more adequate so as to improve the breakdown strength and also decrease the loss and the heat induced by a current balance resistive section by a method wherein a gap is provided between a base wiring and a base electrode adjacent to the wire connecting a connecting section of a base wiring connected with a base terminal to a connecting section of an emitter wiring connected with an emitter terminal. CONSTITUTION:A cut section 5 is provided at the base of a base electrode 11 the most adjacent to a wire connecting a bonding section 3 of a base wiring with a bonding section 4 of an emitter wiring. Therefore, a base current 7 flows through a base section 8 of a silicon substrate 10 and is restricted by a base sheet resistor 9 connected with a base in series, so that the convergence of the base current into an emitter electrode positioned at the central part of the substrate is alleviated. Thereby, the balance of a current is rendered adequate and as a base current is smaller than an emitter current, the loss and the heat are made smaller as compared with those induced by the resistor through which a restricted emitter current flows and an additional process is rendered unnecessary, and thus a breakdown strength is improved.

7. 发明专利

JP2002203942A POWER SEMICONDUCTOR MODULE 失效
公开(公告)号：JP2002203942A
公开(公告)日：2002-07-19
申请号：JP2000402127
申请日：2000-12-28
申请人： FUJI ELECTRIC CO LTD
发明人： KOBAYASHI TAKATOSHI , MIYASAKA TADASHI , YAMADA KATSUMI , MOROZUMI AKIRA
IPC分类号： H01L23/12 , H01L23/373 , H01L25/07 , H01L25/18 , H02M7/00
摘要： PROBLEM TO BE SOLVED: To optimize a ceramic substrate, the quality of material in a metal base, dimensions, a junction material, and a boding method for improving reliability and for lengthening a life in a power semiconductor module. SOLUTION: In this power semiconductor module, a package integrated with terminal is combined with the circuit assembly body of the metal base 1, ceramic substrate 2 and power semiconductor chip 9. In this case, in the ceramic substrate, a front circuit plate 8b and a back plate 8c are joined to both the surfaces of a ceramic plate 8a, and the metal base is soldered to the ceramic substrate. Also, the metal base is made of copper and a copper alloy having a thermal conductivity of 250 W/mK or more, and the plate thickness is set to 3.9 to 6 mm. In the ceramic substrate, the thickness of the ceramic plate is set to 0.1 to 0.65 mm, the thicknesses of the front circuit and back plates are set to 0.1 to 0.5 mm, the external dimensions are set to 50 mm×50 mm maximum, aspect ratio is prescribed from 1:1 to 1:1.2, solder having a melt point of 183 to 250 deg.C is used, and the layer thickness is set to 0.1 to 0.3 mm for bonding the metal base to the ceramic substrate by solder.

8. 发明专利

JPH0653795A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH0653795A
公开(公告)日：1994-02-25
申请号：JP4843593
申请日：1993-03-10
申请人： FUJI ELECTRIC CO LTD
发明人： MIYASAKA TADASHI
IPC分类号： H01L27/04 , H01L21/336 , H01L21/822 , H01L29/78 , H03K17/08 , H01L29/784
摘要： PURPOSE:To realize a semiconductor device capable of preventing vibration of a current generated at the time of the limited operation and to stably limit the current in the semiconductor device having a current limit circuit to prevent destruction of the element due to an overcurrent. CONSTITUTION:A gate voltage subject to bypass control by a MOSFET30 driven by a voltage drop across a sense resistor 21 connecting to a down-stream of a sense emitter 14 of an IGBT 10 being a switching element is applied to the IGBT 10 via a buffer resistor 41 inserted just before a gate electrode 13 of the IGBT 10. Then a rapid increase in the voltage in the sense resistor 21 is prevented by reducing the reply speed of the IGBT 10 to stably limit the current.

9. 发明专利

JPH05129917A REVERSE BIAS CONTROL CIRCUIT FOR VOLTAGE DRIVE TYPE SWITCHING ELEMENT 失效
公开(公告)号：JPH05129917A
公开(公告)日：1993-05-25
申请号：JP29026691
申请日：1991-11-07
申请人： FUJI ELECTRIC CO LTD
发明人： MIYASAKA TADASHI
IPC分类号： H03K17/04 , H03K17/16 , H03K17/56 , H03K17/567
摘要： PURPOSE:To obtain the reverse bias control circuit in which a turn-off delay time is not increased, a reverse bias voltage is reduced and then a surge voltage fault is blocked. CONSTITUTION:A voltage drive switching element 1 turned off by a reverse bias voltage is provided with a voltage step-down circuit 11 acted with a time delay equivalent to a turn-off delay so as to reduce the reverse bias voltage to a prescribed level for the trailing time of a conduction current and with a recovery circuit 21 to raise a signal used for stopping the operation of the voltage step-down circuit 11 at the end for the turn-off time of the voltage drive switching element 1. Moreover, a reverse blocking diode 15 is connected in series with the emitter of a transistor(TR) 13 in a direction to block a forward bias current. Furthermore, a reverse bias control circuit is mounted in the vicinity of the voltage drive switching element 1 formed as a one-chip module and they are formed as a semiconductor device wire-bonded mutually.

10. 发明专利

JPH03198618A SNUBBER CIRCUIT FOR POWER CONVERTER 失效
公开(公告)号：JPH03198618A
公开(公告)日：1991-08-29
申请号：JP33773389
申请日：1989-12-25
申请人： FUJI ELECTRIC CO LTD
发明人： TAKUBO HIROSHI , MIYASAKA TADASHI , YOSHIDA MASAKAZU
IPC分类号： H02H7/12 , H02M1/06 , H02M7/48 , H03K17/16
摘要： PURPOSE:To prevent power loss from being generated due to high frequency by connecting the series circuit of elements having breakdown voltage in the forward direction and the reverse direction, and capacitors, to respective semiconductor elements, in parallel with each other. CONSTITUTION:A series circuit of elements having breakdown voltage in both the forward and reverse directions, for example, constant voltage diodes 19-30, and capacitors 13-18 is connected to power transistors 1-6, in parallel with each other. Voltage between the collector and emitter of the power transistor 1 is not worked till it comes to the Zener voltage of the constant-voltage diode 19, and great surge voltage only in a collector current period is suppressed. The electric charge quantity of the capacitor 13 is small, and so energy loss can be made less, and a snubber circuit can be miniaturized. Besides, by this loss reduction, the frequency for switching the power transistors 1-6 can be made to be a high frequency.

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