专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明专利

JPH0473970A MOS SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH0473970A
公开(公告)日：1992-03-09
申请号：JP18745390
申请日：1990-07-16
申请人： FUJI ELECTRIC CO LTD
发明人： SAKURAI KENYA
IPC分类号： H01L27/02 , H01L27/04 , H01L29/06 , H01L29/78 , H01L29/87
摘要： PURPOSE:To obtain a MOS semiconductor device having an improved surge resistance and an input protecting function by connecting a bidirectional semiconductor surge absorber between a gate of a MOS structure and one main electrode in contact with one surface of a substrate. CONSTITUTION:A gate 5 is provided on a surface between p type source regions 3 through a gate oxide film 4, p type regions 12, 13 are formed through an n type region 11 on an SiO2 film 6 at the periphery of a gate pad region coupled to the gate 5, and n type regions 14, 15 are formed on the surfaces of the regions 12, 13. The region 14 and the region 12 are brought into common contact in openings of an SiO3 film 61 and a PSG layer 62 for protecting the junction of a source electrode 30, and the region 13 and the region 15 are brought into common contact in the openings of the film 61 and the layer 62 with a gate electrode 50 connected to a gate pad region. The electrode 30 is connected to a source terminal S, the electrode 50 is connected to a gate terminal G, and an Si bidirectional surge absorber 33 of an n-p-n-p-n structure is formed of the regions 14, 12, 11, 13 and 15.

2. 发明专利

JPH043981A CONDUCTIVITY-MODULATION MOSFET 失效
公开(公告)号：JPH043981A
公开(公告)日：1992-01-08
申请号：JP10483890
申请日：1990-04-20
申请人： FUJI ELECTRIC CO LTD
发明人： SAKURAI KENYA
IPC分类号： H01L29/78 , H01L21/331 , H01L21/336 , H01L29/739 , H01L29/784
摘要： PURPOSE:To reduce turn-off loss in any circuit application by providing a high- resistance layer of a first conductivity type, providing a heavily doped collector layer of a second conductivity type, and providing lightly doped collector regions of the second conductivity type in the collector layer. CONSTITUTION:A wafer other than epitaxial wafer is used to reduce the cost of a device. A lightly doped collector region 12 include n regions 15 to promote the reverse injection of electrons. As a result, the electrons accumulated in a high-resistance n layer 3 in a transition to turn-off are injected back to the lightly doped collector region 12 and easily reach the n regions 15. These electrons immediately recombines at a collector electrode 10 and disappear. The n regions 15 are formed by n diffusion through holes opened in a boron- diffused protective film.

3. 发明专利

JPH01290265A MOS TYPE SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH01290265A
公开(公告)日：1989-11-22
申请号：JP12110488
申请日：1988-05-18
申请人： FUJI ELECTRIC CO LTD
发明人： SAKURAI KENYA
IPC分类号： H01L29/06 , H01L29/10 , H01L29/78
摘要： PURPOSE:To improve a semiconductor device in an avalanche strength toward a voltage between a source and a drain and a current withstanding strength at a reverse recovery of a built-in diode by a method wherein a depletion region is made to decrease in volume. CONSTITUTION:A p layer 22 is provided only to a part where it is in contact with each source layer 3 and connected with a ring-shaped section at the peripheral section, a polycrystalline Si layer 5 contacted with a gate electrode 8 is made to serve as a field plate around a gate pad section, and when a reverse bias is applied onto a p base layer 2 and an n silicon substrate, a depletion region is made to expand up to under the field plate to retain a breakdown strength. Due to the restriction of the depletion region in volume, the polycrystalline Si layer 5 is provided with a cutoff section 51 and connected with each gate polycrystalline Si layer at a part of a silicon substrate 1 where the gate pad section is not provided and made nearly equal in width to a polycrystalline Si layer which surrounds the periphery of the substrate. By these processes, a device can be improved in an avalanche withstanding strength and a reverse recovery withstanding strength.

4. 发明专利

JPS58134425A MANUFACTURE OF SEMICONDUCTOR ELEMENT 失效
公开(公告)号：JPS58134425A
公开(公告)日：1983-08-10
申请号：JP1714682
申请日：1982-02-05
申请人： FUJI ELECTRIC CO LTD
发明人： SAKURAI KENYA
IPC分类号： H01L21/22 , H01L21/316
摘要： PURPOSE:To improve the reliability of a semiconductor substrate by a method wherein the semicnductor substrate is encased into a device, and treated continuously through one process in O2 at the initial stage and a mixed atmosphere of O2 and H2 at the last stage, pollution by intermediate extraction is avoided and the surface is coated with a pure oxide film. CONSTITUTION:The Si substrates 1 are encased into a vessel consisting of a quartz pipe 11 and a quartz cap 12, a gas containing a substance such as B2H6 is introduced 13 while heating the vessel by an oven and B is permeated to the surface, and N2+O2 are introduced and B is diffused to the inside at 1,200 deg.C. N2+H2 are further introduced after the time of the last stage of diffusion, SiO2 is formed onto the surfaces of the substrates 1 by utilizing nascent O generated by the reaction of H2+O2, heating is stopped at predetermined time, only N2+ H2 are flowed to cool the substrates, and the substrates are extracted. Each time is determined adequately by the depth of B diffusion and the thickness of a SiO2 film. The substrates obtained are coated with the pure SiO2 films, and dielectric resistance and other reliability are improved.

5. 发明专利

JPS5570058A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS5570058A
公开(公告)日：1980-05-27
申请号：JP14379278
申请日：1978-11-21
申请人： FUJI ELECTRIC CO LTD
发明人： ITOU SHINICHI , SAKURAI KENYA , SHIGEKANE TOSHIO
IPC分类号： H01L21/822 , H01L21/331 , H01L21/8222 , H01L27/04 , H01L27/06 , H01L29/72 , H01L29/73
摘要： PURPOSE:To simplify connection between an element, which is mounted ranging over the other surface from one surface of a semiconductor wafer, and an element installed only to the one surface, by integration-forming the former and the latter to the semiconductor wafer, by disposing an electrode of the former at the one surface side and by connecting the electrode to an electrode of the latter. CONSTITUTION:An element for power such as power transistor is made up extending over the other surface from one surface of a semiconductor wafer, and a Zenor diode, etc. integrated to the element are built up only on the one surface of the wafer. For example, the transistor for power is formed by making up a p-base 6 and an n- emitter 8 at the one surface side while using an n-substrate 2, which other surface side is provided with an n -layer 5, as a collector, and a p-ancde 7 and an n-cathode 8 of the Zenor diode are built up at the one surface side of the same substrate 2. An n -region 10 is mounted to the collector 2 at the one surface side, and connected to a cathode 9 of the Zenor diode by means of wiring 15. Thus, the connection of low resistance is obtained while bettering the efficiency of connecting work because the elements are connected on the same surface, and reliability can be improved.

6. 发明专利

JP2003282259A Organic el display 有权
标题翻译：有机EL显示
公开(公告)号：JP2003282259A
公开(公告)日：2003-10-03
申请号：JP2002084434
申请日：2002-03-25
申请人： Fuji Electric Co Ltd , 富士電機株式会社
发明人： KAWAGUCHI GOJI , SAKURAI KENYA
IPC分类号： H01L51/50 , H01L27/32 , H01L51/52 , H05B33/02 , H05B33/04 , H05B33/12 , H05B33/14
CPC分类号： H01L27/322 , H01L51/524 , H01L51/5271 , H01L51/5284
摘要： PROBLEM TO BE SOLVED: To provide an organic EL display capable of absorbing, by a stress relieving layer, stress generated when sticking a color conversion filter to an organic luminescent element or by changes of environment used for installing the display, thereby capable of preventing the luminescent element from being damaged, and having high reliability and high efficiency.
SOLUTION: This organic EL display is so structured that the stress relieving layer formed of a material having a high elastic modulus and a low refractive index as compared with an adhesive layer is disposed in an edge part of a simple body of a color filter layer formed on a support substrate having translucency, or a color conversion filter composed of the color filter layer and a color conversion layer.
COPYRIGHT: (C)2004,JPO
摘要翻译：解决的问题：提供能够通过应力消除层吸收将颜色转换滤光片粘贴到有机发光元件时产生的应力或通过用于安装显示器的环境变化而产生的应力的有机EL显示器，由此能够防止发光元件被损坏，并且具有高可靠性和高效率。解决方案：该有机EL显示器的结构使得由与粘合剂层相比具有高弹性模量和低折射率的材料形成的应力消除层设置在简单的颜色体的边缘部分中形成在具有半透明性的支撑基板上的滤光层，或由滤色器层和颜色转换层组成的颜色转换滤光片。版权所有（C）2004，JPO

7. 发明专利

JPH04296057A MOS SEMICONDUCTOR ELEMENT 失效
公开(公告)号：JPH04296057A
公开(公告)日：1992-10-20
申请号：JP6061691
申请日：1991-03-26
申请人： FUJI ELECTRIC CO LTD
发明人： SAKURAI KENYA
IPC分类号： H01L29/74 , H01L29/749 , H01L29/78
摘要： PURPOSE:To enable a MOS semiconductor element to be lessened in ON-state resistance by a method wherein a gate electrode provided onto a semiconductor surface layer which serves as a channel region is used for the formation of an inversionlayer inside a channel region in a semiconductor layer provided onto the gate electrode through the intermediary of an insulating layer. CONSTITUTION:A second gate oxide film 61 is formed on a gate electrode 7, a polycrystalline silicon layer is deposited thereon, and a P region 11 and an N source region 12 and an N drain region 13 which sandwich the region 11 between them are formed. The second N channel NOSFET is made to have a threshold voltage nearly equal to that of a first N channel MOSFET by controlling a P region in impurity concentration and an oxide film 61 in thickness. The electron currents which flow when MOS semiconductor elements are in ON-states are set equal to each other as much as possible. The source region 12 of the second MOSFET is connected to a source electrode 8, and the drain region 13 is connected to a narrow N contact region 14 provided onto the surface layer of an N layer 2 with a second drain electrode 15.

8. 发明专利

JPH03155677A MOSFET OF CONDUCTIVITY MODULATION TYPE 失效
公开(公告)号：JPH03155677A
公开(公告)日：1991-07-03
申请号：JP5308590
申请日：1990-03-05
申请人： FUJI ELECTRIC CO LTD
发明人： SAKURAI KENYA
IPC分类号： H01L29/78 , H01L29/47 , H01L29/739
摘要： PURPOSE:To improve largely a switching speed of a device and to reduce a current gain of a parasitic bipolar transistor formed on a substrate in order to prevent a latching phenomenon by contacting an electrode forming a Schottky barrier junction with an n type semiconductor substrate on the reverse side of an insulation gate part of a longitudinal type DMOS structure. CONSTITUTION:In this metal-collector IGBT, a p base region 3, an n source region 4 and a p well 5 are formed on the surface part of an n high resistance region 2, and on the surface of region 2, a gate oxide film 6 and a polycrystalline silicon gate electrode 7 are provided. Also, a metal electrode 10 for joining directly a Schottky barrier to the high resistance region 2 is contacted with the region 2 on the reverse side of the region 2. As the used barrier metal, the one which has a suitable barrier height phib by the necessary implanting quantity of a minority carrier is selected. Therefore, the trade-off relation between an ON voltage and a switching time in the IGBT can be improved largely. Also, since a parasitic pnp bipolar transistor is changed from a pn junction bipolar transistor into a bipolar transistor of a Schottky junction emitter type, its current gain alpha is reduced largely.

9. 发明专利

JPS60119716A DIFFUSION OF SEMICONDUCTOR IMPURITY 失效
公开(公告)号：JPS60119716A
公开(公告)日：1985-06-27
申请号：JP22765883
申请日：1983-12-01
申请人： FUJI ELECTRIC CO LTD
发明人： SAKURAI KENYA
IPC分类号： H01L21/22 , H01L21/00
摘要： PURPOSE:To obtain an impurity diffusion layer uniformly and having favorable reproducibility when a semiconductor substrate is accommodated in a vessel, and the diffusion layer is to be formed thereon by a method wherein the vessel is heated flowing gas containing impurities in the different directions from each other alternately from both the edge sides of the vessel. CONSTITUTION:A jig 2 disposed in upright with Si plates 3 of a large number is accommodated in a heating vessel 1 surrounded by a heating furnace 20, raw material gas is sent in from the one end of the vessel 1, and the Si plates 3 are heated at 800-1,050 deg.C exhausting gas from the other end to form diffusion layers on the Si plates 3. Namely, O2 gas 4, N2 gas 5 and POCl3 gas 8 bubbled through a bubbler 9 in a temperature controlled bath 7 are sent in the vessel 1 through flowmeters 6, while at this time, the measure as follows is executed. When mixed raw material gas is to be sent in the vessel 1 using a gas introducing tube 10 at first, the introducing tube 10 is divided into two branched tubes 11, 12, and the gas inflow direction is reversed changing about every five minutes by valves. An exhaust tube 30 is also divided into branched tubes 31, 32 at the same time, and are used properly according to the working conditions of the branched tubes 11, 12.

10. 发明专利

JP2003282261A Organic el display 有权
标题翻译：有机EL显示
公开(公告)号：JP2003282261A
公开(公告)日：2003-10-03
申请号：JP2002085485
申请日：2002-03-26
申请人： Fuji Electric Co Ltd , 富士電機株式会社
发明人： KAWAMURA YUKINORI , SAKURAI KENYA
IPC分类号： H01L51/50 , H05B33/12 , H05B33/14
摘要： PROBLEM TO BE SOLVED: To relieve application to an EL element of thermal stress due to the change of environmental temperature or mechanical stress or the like to an element, and to prevent generation of a void caused by the irregularity on the surface of the element. SOLUTION: This color organic EL display has a top emission structure composed by sticking a transparent substrate with a color conversion filter formed to a substrate with thin film transistors formed. An overcoat layer for adjusting a gap between both substrates and a stress-relieving overcoat layer are formed between both substrates without forming a space between the EL element and them. COPYRIGHT: (C)2004,JPO

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式