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1. 发明专利

JPH09260548A CERAMIC BOARD FOR SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH09260548A
公开(公告)日：1997-10-03
申请号：JP6421596
申请日：1996-03-21
申请人： SUMITOMO KINZOKU ELECTRO , FUJI ELECTRIC CO LTD
发明人： NOZAKI TOSHIO , OOIWA SEIGO , MIYAMA HIROSHI , MOROZUMI AKIRA , NISHIURA SHINJI , SAITO SHIGEMASA
IPC分类号： H01L23/15
摘要： PROBLEM TO BE SOLVED: To improve both heat conductivity and mechanical strength, with a relatively inexpensive board which has alumina for its main component. SOLUTION: A CBC(Ceramic Bond Copper) board 11 is constituted by directly joining a thin copper plate 13 for a circuit pattern and a thin copper plate 14 for heat radiation directly on both sides of the obverse and reverse of a ceramic substrate 12. The manufacture of the ceramic board 12 is as follows. Five wt.% or less Yttria is added as a sintering assistant to ninety five wt.% or more alumina, and these are crashed and mixed to make mixed powder 0.5μm-3μm in average grain diameter. This is made into slurry, and it is molded in sheet form by doctor blade method or the like, and this molded item is baked at 1550-1650 deg.C (preferably at about 1600 deg.C) in air atmosphere. At this time, yttria performs a function of suppressing the abnormal grain growth of alumina at baking, and also performs a function of strengthening mechanical strength.

2. 发明专利

JP2013034029A Semiconductor device 审中-公开
标题翻译：半导体器件
公开(公告)号：JP2013034029A
公开(公告)日：2013-02-14
申请号：JP2012253098
申请日：2012-11-19
申请人： Fuji Electric Co Ltd , 富士電機株式会社
发明人： IKEDA YOSHINARI , SOYANO SHIN , MOROZUMI AKIRA , SUZUKI KENJI , TAKAHASHI YOSHIKAZU
IPC分类号： H01L25/07 , H01L23/29 , H01L25/18
CPC分类号： H01L24/80 , H01L21/4882 , H01L23/3107 , H01L23/3735 , H01L23/4334 , H01L23/473 , H01L23/49537 , H01L23/49562 , H01L23/49575 , H01L24/29 , H01L24/32 , H01L24/33 , H01L24/37 , H01L24/40 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/83 , H01L25/072 , H01L25/117 , H01L2224/05554 , H01L2224/29 , H01L2224/29111 , H01L2224/2919 , H01L2224/32225 , H01L2224/371 , H01L2224/40137 , H01L2224/45124 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/49171 , H01L2224/73215 , H01L2224/73221 , H01L2224/73265 , H01L2224/83801 , H01L2224/84801 , H01L2924/00011 , H01L2924/00013 , H01L2924/01013 , H01L2924/01014 , H01L2924/01019 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01051 , H01L2924/01074 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/014 , H01L2924/0665 , H01L2924/12041 , H01L2924/12042 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13091 , H01L2924/1579 , H01L2924/181 , H01L2924/00014 , H01L2924/00 , H01L2924/00012 , H01L2224/29099 , H01L2224/29199 , H01L2224/29299 , H01L2224/2929 , H01L2224/29298 , H01L2224/83205
摘要： PROBLEM TO BE SOLVED: To efficiently radiate heat from upper and lower main surfaces of a semiconductor device on which a semiconductor element is mounted.SOLUTION: A semiconductor device 1 includes an insulating substrate 10A, an insulating substrate 10B disposed so as to face the insulating substrate 10A, and a semiconductor element 20 disposed in a space between the insulating substrate 10A and the insulating substrate 10B and having a collector electrode and an emitter electrode disposed opposite to the collector electrode. The collector electrode is electrically connected to a metal foil 10ac disposed on the insulating substrate 10A, and the emitter electrode is electrically connected to a metal foil 10bc disposed on the insulating substrate 10B. As a result, the heat generated from the semiconductor element 20 is efficiently radiated from upper and lower main surfaces of the semiconductor device 1.
摘要翻译：要解决的问题：为了有效地从其上安装有半导体元件的半导体器件的上主表面和下主表面辐射热量。解决方案：半导体器件1包括绝缘衬底10A，与绝缘衬底10A相对设置的绝缘衬底10B和设置在绝缘衬底10A和绝缘衬底10B之间的空间中的半导体元件20，并且具有集电极和与集电极相对设置的发射极。集电极与配置在绝缘基板10A上的金属箔10ac电连接，发射电极电连接到设置在绝缘基板10B上的金属箔10bc。结果，从半导体元件20产生的热量有效地从半导体器件1的上主表面和下主表面辐射。版权所有：（C）2013，JPO＆INPIT

3. 发明专利

JPH11233671A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH11233671A
公开(公告)日：1999-08-27
申请号：JP2750098
申请日：1998-02-09
申请人： FUJI ELECTRIC CO LTD
发明人： MOROZUMI AKIRA
IPC分类号： H01L23/12 , H01L25/07 , H01L25/18
摘要： PROBLEM TO BE SOLVED: To suppress the stress acting on ceramics and to prevent the deterioration of insulation owing to a crack by providing the junction part of an outer lead-through terminal and one copper plate by means of solder on a side further inside than the edge of the copper plate by a specified dimension. SOLUTION: Copper plates 2b and 2c are stuck on both faces of a ceramics substrates 2a (thickness of 0.635 mm). A semiconductor chip 3 is mounted on a copper plate 2c (thickness of 0.3 mm). The other copper plate 2b (thickness 0.2 mm) is fixed to the inner side of a heat discharge metal base 1. An outer lead-through terminal 4 is mounted on the copper plate 2c. The junction part of the outer lead-through terminal 4 and the copper plate 2c by solder is set to the side further inside than the edge of the copper plate 2c by at least 3 mm. Thus, maximum main stress deteriorates as the position of the solder connection part of the terminal becomes further than the edge part of the copper plate, and generated stress becomes 130 Mpa by setting it further into the inner side by 3 mm from the edge part. The stress generated is not more than the breaking stress of ceramics (aluminum nitride), and substrate damage can be prevented.

4. 发明专利

JPH08195458A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH08195458A
公开(公告)日：1996-07-30
申请号：JP610495
申请日：1995-01-19
申请人： FUJI ELECTRIC CO LTD
发明人： NISHIURA SHINJI , MOROZUMI AKIRA , SHIMIZU TOMIO , YAMADA KATSUMI , SAITO SHIGEMASA
IPC分类号： H01L23/02 , H01L21/48 , H01L23/15 , H01L23/24 , H01L23/373 , H01L23/48
摘要： PURPOSE: To enhance heat dissipation properties through thinning of the board itself without employing any special structure for relaxing the stress by employing inexpensive alumina powder as a principal material thereby enhancing the mechanical strength. CONSTITUTION: A CBC(CeramicBondingCupper) board 2 being employed in a power transistor module is made by bonding a foil-like copper plate 2c directly to the surface and rear of a ceramic board 2a by a direct bond cupper method, for example, and a circuit pattern is formed on the copper plate 2c on the major surface. The ceramic board 2a is produced by adding zirconia to a principal component of alumina and then adding 0.1-2wt.% of yttria, 0.02-0.5wt.% of calcia, 0.02-0.4wt.% of magnesia and 0.02-0.5wt.% of ceria thereto before sintering at high temperature. With such composition, bending strength is enhanced significantly as compared with a ceramic board made only of alumina and the thermal conductivity is enhanced furthermore. Since the board itself can be made thin, a semiconductor device excellent in heat dissipation properties can be obtained.

5. 发明专利

JP2002203942A POWER SEMICONDUCTOR MODULE 失效
公开(公告)号：JP2002203942A
公开(公告)日：2002-07-19
申请号：JP2000402127
申请日：2000-12-28
申请人： FUJI ELECTRIC CO LTD
发明人： KOBAYASHI TAKATOSHI , MIYASAKA TADASHI , YAMADA KATSUMI , MOROZUMI AKIRA
IPC分类号： H01L23/12 , H01L23/373 , H01L25/07 , H01L25/18 , H02M7/00
摘要： PROBLEM TO BE SOLVED: To optimize a ceramic substrate, the quality of material in a metal base, dimensions, a junction material, and a boding method for improving reliability and for lengthening a life in a power semiconductor module. SOLUTION: In this power semiconductor module, a package integrated with terminal is combined with the circuit assembly body of the metal base 1, ceramic substrate 2 and power semiconductor chip 9. In this case, in the ceramic substrate, a front circuit plate 8b and a back plate 8c are joined to both the surfaces of a ceramic plate 8a, and the metal base is soldered to the ceramic substrate. Also, the metal base is made of copper and a copper alloy having a thermal conductivity of 250 W/mK or more, and the plate thickness is set to 3.9 to 6 mm. In the ceramic substrate, the thickness of the ceramic plate is set to 0.1 to 0.65 mm, the thicknesses of the front circuit and back plates are set to 0.1 to 0.5 mm, the external dimensions are set to 50 mm×50 mm maximum, aspect ratio is prescribed from 1:1 to 1:1.2, solder having a melt point of 183 to 250 deg.C is used, and the layer thickness is set to 0.1 to 0.3 mm for bonding the metal base to the ceramic substrate by solder.

6. 发明专利

JP2003297860A Method of manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：JP2003297860A
公开(公告)日：2003-10-17
申请号：JP2002094650
申请日：2002-03-29
申请人： Fuji Electric Co Ltd , 富士電機株式会社
发明人： MOROZUMI AKIRA , MIYASAKA TADASHI , YAMADA KATSUMI , MOCHIZUKI EIJI
IPC分类号： B23K1/00 , B23K1/008 , B23K1/20 , B23K31/02 , B23K101/40 , H01L21/52 , H01L21/58 , H05K1/03 , H05K3/00 , H05K3/34
CPC分类号： H01L24/83 , B23K1/0016 , B23K1/008 , B23K1/206 , H01L24/32 , H01L24/75 , H01L2224/29111 , H01L2224/32145 , H01L2224/83101 , H01L2224/8319 , H01L2224/8385 , H01L2924/01004 , H01L2924/01006 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01082 , H01L2924/0132 , H01L2924/014 , H01L2924/07802 , H01L2924/10253 , H01L2924/15787 , H01L2924/1579 , H01L2924/3025 , H05K1/0306 , H05K3/0058 , H05K3/341 , H01L2924/3512 , H01L2924/00 , H01L2924/00014
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device having few bubbles in a solder jointing layer by jointing a laminate in which an insulating substrate having a metal circuit plate is laminated on a metal base via a solder layer and a silicon chip is laminated on the substrate via the solder layer by soldering for a short time.
SOLUTION: The metal base, a solder plate, the insulating substrate and the laminate formed of the solder plate and the silicon chip are installed in a pressure-reducing furnace, which is evacuated and made to have a hydrogen atmosphere of positive pressure. Surfaces of respective members in the laminate are reduced. Solder is heated and melted and the furnace is made to have an evacuated atmosphere, and the bubbles in solder are removed. The furnace is made to have a hydrogen atmosphere of positive pressure and a tunnel-like hole caused by the movement of the bubbles in solder is blocked and a uniform solder fillet shape is obtained. Then, it is rapidly quenched and a solder organization is refined. Thus, the creep rate of solder supplied for jointing the insulating substrate and the metal base is improved and the warpage of the metal base is made to speedily return to an original state.
COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：通过将具有金属电路板的绝缘基板经由焊料层和硅芯片层叠在金属基底上的层叠体连接来提供在焊接接合层中具有少量气泡的半导体器件通过焊接在短时间内通过焊料层层压在基板上。
解决方案：将金属基底，焊盘，绝缘基板和由焊料板和硅芯片形成的层叠体安装在减压炉中，该减压炉被抽真空并使其具有正压氢气氛。层压体中各构件的表面减少。将焊料加热熔化，使炉子具有抽真空的气氛，并除去焊料中的气泡。使炉子具有正压的氢气氛，并且阻止由焊料中的气泡的移动引起的隧道状孔，并且获得均匀的焊接圆角形状。然后，它被快速淬火并且焊接组织被精炼。因此，提供用于接合绝缘基板和金属基座的焊料的蠕变速率得到改善，并且金属基底的翘曲被快速地恢复到原始状态。版权所有（C）2004，JPO

7. 发明专利

JPH1197203A SHUNT RESISTANCE ELEMENT FOR SEMICONDUCTOR DEVICE, AND METHOD OF MOUNTING IT 失效
公开(公告)号：JPH1197203A
公开(公告)日：1999-04-09
申请号：JP25304597
申请日：1997-09-18
申请人： FUJI ELECTRIC CO LTD
发明人： IWAIDA TAKESHI , ODA YOSHINORI , MOROZUMI AKIRA
IPC分类号： H01C1/14 , H01C3/00 , H01C13/00
摘要： PROBLEM TO BE SOLVED: To provide a shunt resistance element for a semiconductor device which is high in resistance value accuracy, temperature resistance, and heat radiation characteristic, and is easily assembled into a module. SOLUTION: To sandwich a ceramics substrate 5, a sheet-like resistor 6 of measuring precision resistance material (copper alloy such as managing, constant, etc.), of a size designed so as to satisfy a specified resistance value is placed on its front surface side, while a copper plate 7 is placed on its rear surface, which are jointed as a single body by activation metal method using silver solder, etc., while a bonding electrode part 8 for detecting current and voltage is formed at either end of the resistor, assembled by solder jointing on a substrate mounted with a semiconductor chip or on a copper base plate of a module.

8. 发明专利

JPH08195450A BOARD FOR SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH08195450A
公开(公告)日：1996-07-30
申请号：JP610395
申请日：1995-01-19
申请人： FUJI ELECTRIC CO LTD , SUMITOMO KINZOKU ELECTRO
发明人： NISHIURA SHINJI , SAITO SHIGEMASA , MOROZUMI AKIRA , NOZAKI TOSHIO , MIYAMA HIROSHI , OOIWA SEIGO
IPC分类号： H01L23/13 , H01L23/15 , H01L23/373
摘要： PURPOSE: To improve heat dissipation properties through thinning of a board itself by adding zirconia to principal component of alumina and then adding one kind or more of additive, selected from a group of yttria, calcia, magnesia and ceria, thereto thereby preparing sintered ceramic having enhanced fracture toughness. CONSTITUTION: A ceramic board 2a is laminated on a heat dissipation base through adhesive or the like while being sandwiched by copper plates 2b, 2c thus constituting a CBC board 2. The ceramic board 2a in the CBC board 2 is produced by adding zirconia to principal component of alumina and then further adding one kind or more of additive selected from a group of yttria, calcia, magnesia and ceria thereby preparing a sintered cerarnic. Since the bending strength of the CBC board 2 is enhanced and the flexure thereof is increased, it can be made thin without causing any crack and the thermal conductivity can be enhanced geometrically.

9. 发明专利

JPH0851169A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH0851169A
公开(公告)日：1996-02-20
申请号：JP18570794
申请日：1994-08-08
申请人： FUJI ELECTRIC CO LTD
发明人： TOBA SUSUMU , MOROZUMI AKIRA , SHIGETA FUMIO
IPC分类号： H01L23/12 , H01L23/373
摘要： PURPOSE:To reduce deformation of an insulating substrate even when stress is generated by the difference of thermal expansion coefficients between a semiconductor element body and the insulating substrate by composing a substrate made of a metal supporting the semiconductor element of steel. CONSTITUTION:Low cost steel is used as the material of a substrate 1 made of a metal. The deformation of a substrate 1 is reduced even when substrate stress is generated by the difference of thermal expansion coefficients with a semiconductor by employing steel having a larger elastic coefficient than copper, and the breakdown of the insulating substrate 2 or the breakdown or characteristic change of a transistor chip 31 and a diode chip 32 can be prevented. When a cooling fin 9 is made of aluminum, the erosion of Al in the cooling fin is reduced by using steel having a small contact potential difference with Al in place of copper having large contact potential difference with Al. When the clad material of a steel material and copper is employed as the material of the substrate made of the metal brought into contact with the cooling fin, the thermal expansion coefficient of the clad material can be brought close to that of a semiconductor material or the insulating material of the insulating substrate.

10. 发明专利

JP2014060410A Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：JP2014060410A
公开(公告)日：2014-04-03
申请号：JP2013218272
申请日：2013-10-21
申请人： Fuji Electric Co Ltd , 富士電機株式会社
发明人： IKEDA YOSHINARI , SOYANO SHIN , MOROZUMI AKIRA , SUZUKI KENJI , TAKAHASHI YOSHIKAZU
IPC分类号： H01L23/48 , H01L23/12 , H01L23/29 , H01L25/07 , H01L25/18
CPC分类号： H01L24/80 , H01L21/4882 , H01L23/3107 , H01L23/3735 , H01L23/4334 , H01L23/473 , H01L23/49537 , H01L23/49562 , H01L23/49575 , H01L24/29 , H01L24/32 , H01L24/33 , H01L24/37 , H01L24/40 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/83 , H01L25/072 , H01L25/117 , H01L2224/05554 , H01L2224/29 , H01L2224/29111 , H01L2224/2919 , H01L2224/32225 , H01L2224/371 , H01L2224/40137 , H01L2224/45124 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/49171 , H01L2224/73215 , H01L2224/73221 , H01L2224/73265 , H01L2224/83801 , H01L2224/84801 , H01L2924/00011 , H01L2924/00013 , H01L2924/01013 , H01L2924/01014 , H01L2924/01019 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01051 , H01L2924/01074 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/014 , H01L2924/0665 , H01L2924/12041 , H01L2924/12042 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13091 , H01L2924/1579 , H01L2924/181 , H01L2924/00014 , H01L2924/00 , H01L2924/00012 , H01L2224/29099 , H01L2224/29199 , H01L2224/29299 , H01L2224/2929 , H01L2224/29298 , H01L2224/83205
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device which can efficiently radiate heat from top and bottom principal surfaces of the semiconductor device on which a semiconductor element is mounted.SOLUTION: A semiconductor device 4 comprises a metal foil 10ac of an insulation substrate 10A arranged to near an end (part C in Figure) of an insulating plate 10aa. An insulating plate 10ga is separately provided and a control terminal 10g is connected to a top face side of the insulating plate 10ga, and a metal foil 10gb is connected to an undersurface side of the insulating plate 10ga. In addition, the metal foil 10gb is bonded to an end of the metal foil 10ac via a solder layer 16. With this configuration, heat generated from the semiconductor element is efficiently dispersed to the extended part (part C in Figure) of the metal foil 10ac thereby to increase a heat dissipation effect.
摘要翻译：要解决的问题：提供一种能够有效地从其上安装有半导体元件的半导体器件的顶部和底部主表面辐射热的半导体器件。解决方案：半导体器件4包括绝缘基板10A的金属箔10ac，其布置靠近绝缘板10aa的一端（图中的C部分）。绝缘板10ga被单独设置，并且控制端子10g连接到绝缘板10ga的顶面侧，金属箔10gb连接到绝缘板10ga的下表面侧。此外，金属箔10gb通过焊料层16接合到金属箔10ac的一端。由此，半导体元件产生的热量有效地分散到金属箔的延伸部分（图中的C部分） 10ac，从而增加散热效果。

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