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1. 发明专利

JP2017118771A ３レベル電力変換回路审中-公开
公开(公告)号：JP2017118771A
公开(公告)日：2017-06-29
申请号：JP2015254335
申请日：2015-12-25
申请人：富士電機株式会社 , Fuji Electric Co Ltd
发明人： FUJII MIKISUKE , TAKUBO HIROSHI
IPC分类号： H02M7/483
CPC分类号： H02M7/487 , H02M7/003 , H02M2001/0048 , Y02B70/1483 , Y02B70/1491
摘要：【課題】SiC製デバイスの採用でコストを下げることとダイオードの導通電圧を低くするためにチップ面積を大きくして効率を上げるという二律背反する要求を満たすことができる3レベル電力変換回路を提供する。【解決手段】直流高電位端子Pと直流低電位端子Nとの間に直列接続された2つの半導体スイッチング素子を接続し、さらに上記2つの半導体スイッチング素子の接続点をAC出力端子に接続して、直流高電位側P及び直流低電位側Nを中間電位(直流中性点)端子Mに対して対称になるようする。そのうえでAC出力端子と中間電位端子Mとの間に、相互に逆方向接続となるように2つの半導体スイッチング素子(例.IGBT)を用いて構成された双方向スイッチを介在させて接続する。そうしてダイオード(例.SiC製)D3とD4の電流容量を半導体スイッチング素子(例.Si製)T3とT4よりも小さくなるように構成する。【選択図】図1

2. 发明专利

JPH06169579A POWER REGENERATIVE DEVICE 失效
公开(公告)号：JPH06169579A
公开(公告)日：1994-06-14
申请号：JP34311992
申请日：1992-11-30
申请人： FUJI ELECTRIC CO LTD
发明人： TOGO MITSUHIKO , TAKUBO HIROSHI
IPC分类号： H02J5/00 , H02M7/48 , H02M7/797
摘要： PURPOSE:To reduce the switching loss and the heat generation at the limited operation of a power regenerative device, and lighten the device, and cut down the cost. CONSTITUTION:This relates to a power regenerator which has a converter 103 and an electrolytic capacitor 104, and regenerates power in an AC power source by switching a semiconductor element 101. This is provided with a detector 105, which detects the regenerated current from the converter 103 to an AC power source 200, and a comparator 106, which outputs a reset signal A by comparing the detected value of the detector 105 with the set value from a limited operation setter 107. Furthermore, this is equipped with a driver 110, which generates a drive signal for igniting the semiconductor 101 one time per period of the AC power source 200, a divider 111, which divides the period of a drive signal into plural sections and outputs it, and a latch part 108, which outputs a switching signal being generated by latching the output signal of the divider 111 and resetting it in every section.

3. 发明专利

JPH06153491A SNUBBER CIRCUIT FOR SWITCHING DEVICE 失效
公开(公告)号：JPH06153491A
公开(公告)日：1994-05-31
申请号：JP29592092
申请日：1992-11-05
申请人： FUJI ELECTRIC CO LTD
发明人： MOCHIZUKI MASATO , TAKUBO HIROSHI
IPC分类号： H02M1/00 , H02M7/48 , H02P27/06 , H02P7/63
摘要： PURPOSE:To provide compactness and low cost by reducing the loss produced from a snubber circuit corresponding to a switching device constituting a power converter. CONSTITUTION:One end of each capacitor of individual snubber circuits 4 and 5 provided in response to respective switching devices 2 and 3 such as IGBT is connected to an intermediate potential end of a power supply smoothening capacitor, and loss produced from the snubber circuit is reduced and the whole apparatus is made more compact for reducing costs by restricting (clamping) the capacitor voltage of individual snubber circuits 4 and 5 to almost one-half of the power supply voltage.

4. 发明专利

JPH05244788A 失效
公开(公告)号：JPH05244788A
公开(公告)日：1993-09-21
申请号：JP4152592
申请日：1992-02-27
申请人： FUJI ELECTRIC CO LTD
发明人： MOCHIZUKI MASATO , TAKUBO HIROSHI
IPC分类号： H02M7/48 , H02P3/18
摘要： PURPOSE:To prevent damage at the time of erroneous wiring of an electrolytic capacitor for smoothing a current of a power regenerative inverter and to prevent a current branched to a switch module at the time of power driving. CONSTITUTION:Diodes 19, 20 are so provided at P- and N-connecting wires for connecting an electrolytic capacitor 18 and a power regenerative inverter in parallel with an inverter for driving a motor 10 that polarities coincide to prevent damage of the capacitor 18 at the time of erroneous wiring, currents branched to switch modules 12-17 at the time of power driving a motor are prevented, and increases in sizes of the modules are avoided.

5. 发明专利

JPH03108749A TRANSISTOR MODULE FOR POWER CONVERTER 失效
公开(公告)号：JPH03108749A
公开(公告)日：1991-05-08
申请号：JP28403489
申请日：1989-10-31
申请人： FUJI ELECTRIC CO LTD
发明人： KOBAYASHI SHINICHI , HOSEN TORU , SUZUKI TATATOMI , TAKUBO HIROSHI
IPC分类号： H01L25/07 , H01L25/18 , H02M1/00 , H02M1/08 , H02M7/537
摘要： PURPOSE:To enable reduction in wiring inductance for connection of a transistor and an asymmetric device and high dissipation of heat generated from the asymmetric device by placing both devices in a container, and by fixing an electrode of each device to a connection conductor on the container's bottom plate. CONSTITUTION:A transistor 41 and an asymmetric device 43 of small forward- voltage drop and high reverse-voltage drop are placed in a container 11-13. An electrode of each device 41, 43 is fixed to a connection conductor on a container's bottom plate 11, and its other electrodes are connected to the other connection conductors 31, 33, and 34 via wires 5, and the conductors 31-34 are led out of the container's parts 11-13 (bottom plate, side wall, and upper cap) to form outer terminals 61-64 (emitter, collector, base and cathode), respectively. For example, copper-made connection conductors 31-34 are fixed on the copper- made container's bottom plate 11 via an insulating substrate 2. The transistor chip 41, diode chip 42, and a constant voltage diode chip 43 are fixed on the connection conductor 32 by the bottom collector electrode, bottom cathode electrode, and bottom anode electrode, respectively.

6. 发明专利

JPH05344736A 失效
公开(公告)号：JPH05344736A
公开(公告)日：1993-12-24
申请号：JP15027692
申请日：1992-06-10
申请人： FUJI ELECTRIC CO LTD
发明人： TAKUBO HIROSHI , YOSHIDA MASAKAZU
IPC分类号： H02M7/155 , H02H7/12 , H02M5/458 , H02M7/12 , H02M7/219 , H02P23/06
摘要： PURPOSE:To control potential variations in a connection point between a power converter and an AC power supply so as to make small even if load variations of instantaneous interruption of AC power supply occurs when power is regenerated. CONSTITUTION:An inverter 5 has a converter 51 having bridge connection with transistors T1-T6 to which rectifier diodes D1-D6 are connected in reverse parallel and a smoothing capacitor 53. Regenerative current is monitored by a CT4, and when the regenerative current is in excess of reference value and is detected by a comparator 10A comparing it with the reference value, potential variations in a connection point between a power converter and an AC power supply are controlled so as to make small by turning positive polarity transistor elements T1-T3 OFF through an AND gate 12A and a base driving circuit 13A.

7. 发明专利

JPH03145755A POWER CONVERSION DEVICE TRANSISTOR MODULE 失效
公开(公告)号：JPH03145755A
公开(公告)日：1991-06-20
申请号：JP28402789
申请日：1989-10-31
申请人： FUJI ELECTRIC CO LTD
发明人： OGAWA SHOGO , YOSHIDA MASAKAZU , TAKUBO HIROSHI
IPC分类号： H01L25/07 , H01L25/18 , H02M1/00 , H02M1/08 , H02M7/537
摘要： PURPOSE:To make transistors uniform and large in surge absorbing effect by a method wherein a pair of a transistor board and an asymmetrical element board is fixed onto a connection conductor on the base plate of a case making their electrodes face downward, and electrodes provided to the other sides of the element boards are connected to another conductor. CONSTITUTION:Connection conductors 31, 32, 33, and 34 are fixed onto a base plate 11 of a case through the intermediary of an insulating board 2. The conductor 32 is separated into a left and a right part, the collector electrodes on the undersides of transistor chips 41A and 41B, the cathode electrodes on the diode chips 42A and 42B, and the anode electrodes on the underside of voltage regulation diode chips 43A and 43B are fixed to the separated parts of the conductor 32 respectively. The emitter electrodes on the upsides of the transistor chips 41A and 41B, the anode electrodes on the upsides of the diode chips 42A and 42B, and the cathode electrodes on the upsides of the voltage regulation diode chips 43A and 43B are connected to the conductors 31, 33, and 34 respectively with metal fine wires 5.

8. 发明专利

JP2013179362A Semiconductor power module 有权
标题翻译：半导体功率模块
公开(公告)号：JP2013179362A
公开(公告)日：2013-09-09
申请号：JP2013124928
申请日：2013-06-13
申请人： Fuji Electric Co Ltd , 富士電機株式会社
发明人： FUJITA KENJI , TAKUBO HIROSHI
IPC分类号： H01L25/07 , H01L25/18
CPC分类号： H01L2224/36 , H01L2224/40 , H01L2224/40095 , H01L2224/40225 , H01L2224/48091 , H01L2224/48137 , H01L2924/00014 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/15787 , H01L2924/19107 , H01L2924/00 , H01L2224/37099 , H01L2924/00012 , H01L2224/84
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor power module that reduces floating inductance in a chip mounting portion without changing a heat radiation structure of a semiconductor chip.SOLUTION: A semiconductor power module 111 includes: a first insulation substrate 4 where a first direct current wiring pattern 1 and an alternating current wiring pattern 3 are joined on the same plane; a second direct current wiring pattern 2 which is located on the first insulation substrate 4 and is placed close to the first direct current wiring pattern 1; a first connection conductor 7 electrically connecting a semiconductor chip 11d mounted on the first direct current wiring pattern 1 with the alternating current wiring pattern 3; and a second connection conductor 8 electrically connecting a semiconductor chip 31s mounted on the alternating current wiring pattern 3 with the second direct current wiring pattern 2. The first connection conductor 7 is joined to one plane of a second insulation substrate 9 and the second connection conductor 8 is joined to the other plane of the second insulation substrate 9.
摘要翻译：要解决的问题：提供一种减少芯片安装部分中的浮动电感而不改变半导体芯片的散热结构的半导体功率模块。解决方案：半导体功率模块111包括：第一绝缘基板4，其中第一直流布线图案1和交流布线图案3在同一平面上接合; 位于第一绝缘基板4上并靠近第一直流布线图案1放置的第二直流布线图案2; 电连接安装在第一直流布线图案1上的半导体芯片11d与交流布线图案3的第一连接导体7; 以及将安装在交流布线图案3上的半导体芯片31s与第二直流布线图案2电连接的第二连接导体8.第一连接导体7接合到第二绝缘基板9的一个平面，第二连接导体 8连接到第二绝缘基板9的另一平面。

9. 发明专利

JPH1032976A DRIVE CIRCUIT OF SELF-QUENCHING-TYPE SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH1032976A
公开(公告)日：1998-02-03
申请号：JP18567696
申请日：1996-07-16
申请人： FUJI ELECTRIC CO LTD
发明人： TAKUBO HIROSHI
IPC分类号： H02J1/00 , G05F1/10 , H02M1/08
摘要： PROBLEM TO BE SOLVED: To suppress di/dt and dV/di while preventing the increase in time delay of the switching in a voltage-controlled-type self-quenching-type semiconductor device such as an IGBT(Insulation Gate Bipolar Transistor). SOLUTION: A switching circuit 6 tums on a transistor 8 (10) based on the ON (OFF) signal of an ON/OFF signal 101 and applies a power supply 15 (16) to the gate of an IGBT 25 via a low-value gate resistor 12 (14). Then, the gate capacity of the IGBT is rapidly charged (discharged) and at the same time VGB increases (decreases), and current Ic begins to increase (decrease) with a small delay time. At this point, a voltage 106 is generated at an inductance 36 being connected between an auxiliary emitter terminal Es and a main emitter terminal Em of the IGBT 25, thus activating a one-short circuit 32 (33). A switching circuit 6 turns off the transistors 8 (10) and 7 (9) due to the one-shot output 102 (103) at this point, switches a gate resistance to 11 (13) with a larger value and relaxes the rising (trailing) speed of Ic.

10. 发明专利

JP2580804B2 失效
公开(公告)号：JP2580804B2
公开(公告)日：1997-02-12
申请号：JP28403489
申请日：1989-10-31
申请人： FUJI ELECTRIC CO LTD
发明人： KOBAYASHI SHINICHI , HOSEN TOORU , SUZUKI TATATOMI , TAKUBO HIROSHI
IPC分类号： H01L25/07 , H01L25/18 , H02M1/00 , H02M1/08 , H02M7/537

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