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1. 发明专利

JP2006040991A Method of evaluating semiconductor device and manufacturing method thereof 审中-公开
标题翻译：评估半导体器件的方法及其制造方法
公开(公告)号：JP2006040991A
公开(公告)日：2006-02-09
申请号：JP2004215183
申请日：2004-07-23
申请人： Elpida Memory Inc , Hitachi Ltd , エルピーダメモリ株式会社 , 株式会社日立製作所
发明人： TAKATO ATSUKO , NOZOE MARI , OYU SHIZUNORI
IPC分类号： H01L21/66 , H01L21/8238 , H01L21/8242 , H01L27/092 , H01L27/108
CPC分类号： H01L22/14 , G01R31/2653 , H01L2924/0002 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a technology which makes it possible to evaluate the leak characteristics distribution in a pn junction in the middle of manufacturing process of a semiconductor device having the pn junction, and to rapidly feed back the evaluation results to decision making of manufacturing process conditions. SOLUTION: For a wafer in the middle of manufacturing process, an electron beam is irradiated several times on the surface of the wafer whereon a plug is exposed at prescribed intervals under such a condition that the pn junction may be reverse-biased. Monitoring the charged potential of the surface of the plug, the electron beam irradiation conditions are changed to such ones that the charged potential may come within a desired range. Under such irradiation conditions, a secondary electron signal of a circuit pattern is obtained and the leak characteristics are evaluated. Since the charged potential in the pn junction is relaxed according to the size of the leakage current within intermittent time, the leak characteristics are evaluated from the brightness signal of a potential contrast image. Thus, by measuring the charged potential and making it within a desired range, the evaluation results reflect a state in actual operation and thereby the accuracy improves. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种能够在具有pn结的半导体器件的制造过程中评估pn结中的泄漏特性分布的技术，并且将评估结果快速反馈到制造工艺条件的决策。解决方案：对于在制造过程中间的晶片，在pn结可以被反向偏置的条件下，以规定的间隔将电子束照射在晶片的表面上，在该表面上暴露一个电极。监测插头表面的带电电位，将电子束照射条件改变为充电电位可能在期望范围内的条件。在这种照射条件下，获得电路图案的二次电子信号，并评价泄漏特性。由于根据间歇时间内的漏电流的大小使pn结中的充电电位松弛，所以根据潜在对比度图像的亮度信号来评价泄漏特性。因此，通过测量充电电位并使其在期望的范围内，评价结果反映实际操作中的状态，从而提高精度。版权所有（C）2006，JPO＆NCIPI

2. 发明专利

JP2009110978A Ion beam device 有权
标题翻译：离子束装置
公开(公告)号：JP2009110978A
公开(公告)日：2009-05-21
申请号：JP2009034721
申请日：2009-02-18
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： YAJIMA YUSUKE , UMEMURA KAORU , TAJI SHINICHI , MURAKOSHI HISAYA , SHINADA HIROYUKI , NOZOE MARI , TAKATO ATSUKO , HASEGAWA MASAKI , MAKINO HIROSHI
IPC分类号： H01J37/317 , H01J37/28 , H01L21/66
摘要： PROBLEM TO BE SOLVED: To provide an inspection device capable of consistently manufacturing a sample for appearance inspection of a semiconductor wafer in high speed and high resolution and for TEM observation or various analyses from an existing part of foreign matters or defects, with high positioning accuracy.
SOLUTION: A scanning electron microscope part (an SEM part) for wafer inspection 1 and an ion beam part 101 for a sample manufacturing process are provided together in the same inspection device, appearance inspection of the wafer 7 by the SEM part 1, and an extracting processing operation of the sample for TEM observation from an existing part of a defect (a foreign matter or a pattern defect) on the wafer 7 and various analyses based on the inspection result, are made enabled to consistently carry out on the same stage 8.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种检测装置，其能够以高速和高分辨率一贯地制造用于半导体晶片的外观检查的样品，并且可以从现有部分的异物或缺陷进行TEM观察或各种分析，定位精度高。解决方案：用于晶片检查的扫描电子显微镜部分（SEM部分）1和用于样品制造过程的离子束部分101一起设置在相同的检查装置中，通过SEM部分1对晶片7进行外观检查，并且从晶片7上的缺陷的现有部分（异物或图案缺陷）的现有部分进行TEM观察的提取处理操作以及基于检查结果的各种分析，能够一致地执行相同阶段8.版权所有（C）2009，JPO＆INPIT

3. 发明专利

JP2007003539A Circuit pattern inspection device 有权
标题翻译：电路图案检查装置
公开(公告)号：JP2007003539A
公开(公告)日：2007-01-11
申请号：JP2006238865
申请日：2006-09-04
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： SHINADA HIROYUKI , TAKATO ATSUKO , NINOMIYA TAKANORI , SASAKI HIROKO , NOZOE MARI , MURAKOSHI HISAYA , NINOMIYA HIROSHI , KASAI YUJI
IPC分类号： G01B15/04 , G01N23/225 , H01J37/244 , H01L21/66
摘要： PROBLEM TO BE SOLVED: To improve efficiency of condition setting, to shorten inspection time, and to improve reliability of an inspection, in a circuit pattern inspection device for inspecting, with an electron beam, a defect, foreign substance, residue, or the like of the same design pattern of a semiconductor device on a wafer in a manufacturing process of the semiconductor device.
SOLUTION: The circuit pattern inspection device independently has a detection signal processing circuit for forming a large current high-speed image for detecting the presence of the defect, and a detection signal processing circuit for forming an image in a specific narrow part detected by this defect detecting inspection. Alternatively, a first electron optical system for the defect detecting inspection and a second electron optical system only for review for observing a specific narrow part detected by the defect detecting inspection are stored in parallel in the same vacuum vessel. Alternatively, a first detector for the defect detecting inspection and a second detector only for review for observing a specific narrow part detected by the defect detecting inspection are disposed.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：为了提高条件设定的效率，缩短检查时间，提高检查的可靠性，在电子束检查装置中，通过电子束检查缺陷，异物，残留物，在半导体器件的制造过程中晶片上的半导体器件的相同设计图案等。解决方案：电路图形检查装置独立地具有用于形成用于检测缺陷的存在的大电流高速图像的检测信号处理电路，以及用于形成检测到的特定窄部分中的图像的检测信号处理电路通过该缺陷检测检查。或者，用于缺陷检测检查的第一电子光学系统和仅用于观察由缺陷检测检查检测到的特定窄部分的检查的第二电子光学系统并行存储在同一真空容器中。或者，设置用于缺陷检测检查的第一检测器和仅用于观察由缺陷检测检查检测到的特定窄部分的检查的第二检测器。版权所有（C）2007，JPO＆INPIT

4. 发明专利

JP2006162609A Method and system for pattern inspection using electron beam 有权
标题翻译：使用电子束的图案检查的方法和系统
公开(公告)号：JP2006162609A
公开(公告)日：2006-06-22
申请号：JP2005333561
申请日：2005-11-18
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： HIROI TAKASHI , KUNI TOMOHIRO , WATANABE MASAHIRO , SHISHIDO CHIE , SHINADA HIROYUKI , GUNJI YASUHIRO , TAKATO ATSUKO
IPC分类号： G01N23/225 , G01B15/04 , H01J37/22 , H01J37/244 , H01J37/28 , H01L21/66
摘要： PROBLEM TO BE SOLVED: To provide a method and a system for pattern inspection using electron beam, which can solve the problem inherent to the present technology in electron optics systems or detectors requiring detector of above a certain area or larger as an important factor for irradiating electron beam and detect its secondary electrons, etc. at a high speed, where the detection of 200 Msps or higher is actually difficult due to the constraint of the frequency being inversely proportional to the area.
SOLUTION: For example, to detect at 400 Msps with the required area set as 4 mm angle and speed at this 4 mm angle as 150 Msps, four simple detectors of high-speed 2 mm angle are aligned, signals of them are amplified and then added to be subject to A/D conversion. Alternatively, a secondary electronic deflector is used to allow secondary electrons to sequentially be incident into the detector of 8 mm angle, detected at 100 Msps, and then aligned after A/D conversion. Both of these methods can achieve an area of 4 mm angle and a speed of 400 Msps.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种使用电子束进行图案检查的方法和系统，其可以解决当前技术中固有的电子光学系统或需要高于某一区域或更大的检测器的检测器的重要问题作为重要的问题用于照射电子束的因子并且以高速检测其二次电子等，其中由于频率与面积成反比的约束，实际上难以检测到200 Msps或更高。
解决方案：例如，为了检测400 Msps，所需区域设置为4 mm角，速度为4 mm，为150 Msps，高速2 mm角的四个简单检测器对齐，其信号为放大后再添加进行A / D转换。或者，二次电子偏转器用于允许二次电子顺序地入射到以100 Msps检测到的8mm角的检测器中，然后在A / D转换之后对准。这两种方法都可以达到4 mm角，400 Msps的速度。版权所有（C）2006，JPO＆NCIPI

5. 发明专利

JP2005347281A Circuit pattern inspection device 有权
标题翻译：电路图案检查装置
公开(公告)号：JP2005347281A
公开(公告)日：2005-12-15
申请号：JP2005237080
申请日：2005-08-18
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： TAKATO ATSUKO , MURAKOSHI HISAYA , SHINADA HIROYUKI , OSHIMA TAKU , NOZOE MARI , TOYAMA HIROSHI , IWABUCHI HIROKO , IIZUKA MASAMI
IPC分类号： H01L21/66 , H01J37/05 , H01J37/147 , H01J37/244 , H01J37/28
摘要： PROBLEM TO BE SOLVED: To conduct high-precision and rapid inspection of a semiconductor in a desired contrast by efficiently and rapidly detecting secondary electrons, reflected electrons or both of them generated from a substrate, in a method for inspecting a defect, a foreign substance, a residue and the like of the same design pattern of a semiconductor device by using an electron beam.
SOLUTION: A detector for detecting electrons generated from a surface of the substrate is composed of divided detection elements, desired control according to a sample state is executed to orbits of the electrons, and a calculation process of an obtained output signal of each element is carried out.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：为了通过有效和快速地检测从基板产生的二次电子，反射电子或它们二者在所需对比度中进行高精度和快速检查，在用于检查缺陷的方法中，通过使用电子束的半导体器件的相同设计图案的异物，残留物等。解决方案：用于检测从衬底的表面产生的电子的检测器由分割的检测元件组成，根据样品状态的期望控制被执行到电子的轨道，并且所获得的输出信号的计算处理元素被执行。版权所有（C）2006，JPO＆NCIPI

6. 发明专利

JP2004335484A Inspection method and inspection apparatus using electron beam 审中-公开
公开(公告)号：JP2004335484A
公开(公告)日：2004-11-25
申请号：JP2004218052
申请日：2004-07-27
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： IWABUCHI HIROKO , TODOKORO HIDEO , MORI HIROYOSHI , SATO MITSUGI , USAMI YASUTSUGU , ICHIHASHI MIKIO , FUKUHARA SATORU , SHINADA HIROYUKI , KANEKO YUTAKA , TAKATO ATSUKO , TOOYAMA HIROSHI , SUGIYAMA KATSUYA
IPC分类号： G01N23/225 , H01J37/22 , H01J37/28 , H01L21/66
摘要： PROBLEM TO BE SOLVED: To provide an inspection method and an inspection apparatus using an electron beam achieving a higher resolution, higher speed and reliability, and a smaller size. SOLUTION: A voltage is applied to a sample via a sample stage. An electron beam is converged on the sample, and the sample is scanned. The sample stage is continuously moved during scanning, and charged particles generated from the sample are detected to thereby detect a defect of the sample, wherein a distance between the sample stage and a shield frame is determined on the basis of a limit of discharge occurring between the sample stage and the shield frame. There is provided a coil of at least six poles for correcting the shape of the electron beam. The electron beam is deflected for blanking during movement of the sample, with the crossover of the electron beam taken as a fulcrum of blanking. The magnitude of the voltage applied to the sample is determined according to the kind of the sample. COPYRIGHT: (C)2005,JPO&NCIPI

7. 发明专利

JP2009145353A Pattern inspection device 有权
标题翻译：图案检查装置
公开(公告)号：JP2009145353A
公开(公告)日：2009-07-02
申请号：JP2008323107
申请日：2008-12-19
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： MURAKOSHI HISAYA , YAJIMA YUSUKE , SHINADA HIROYUKI , NOZOE MARI , TAKATO ATSUKO , UMEMURA KAORU , HASEGAWA MASAKI , KURODA KATSUHIRO
IPC分类号： G01N23/225 , H01L21/027 , H01L21/66
摘要： PROBLEM TO BE SOLVED: To provide a pattern inspection device and a pattern inspection method for inspecting a semiconductor or the like quickly.
SOLUTION: This pattern inspection device includes at least three or more of electronic optical systems, and compares detection signals obtained substantially concurrently in same circuit patterns. A degree of vacuum in a vicinity of a plurality of electron sources is kept very high all the time by vacuum-evacuating an electron gun chamber with a plurality of electron sources mounted independently from a sample chamber. An electric field and a magnetic field are sealed within the respective electronic optical systems by a shielding electrode for vacuum-evacuating an electron beam path, and a negative voltage is set to a sample to accelerate a secondary electron and a reflected electron to a direction of an electron source side in an electron beam optical axis, so as to detect the secondary electron and the reflected electron within the same electronic optical system. Defects are determined thereby at the same time in the pattern inspection, and a throughput of the inspection is improved proportionally to the number of the electronic optical systems.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种快速检查半导体等的图案检查装置和图案检查方法。解决方案：该图案检查装置包括至少三个或更多个电子光学系统，并且以相同的电路图案基本同时获得的检测信号进行比较。通过用独立于样品室安装的多个电子源对电子枪室进行真空抽真空，多个电子源附近的真空度保持非常高。通过用于真空排出电子束路径的屏蔽电极将电场和磁场密封在各个电子光学系统内，并且将负电压设置为样品，以将二次电子和反射电子加速到在电子束光轴中的电子源侧，以便检测同一电子光学系统内的二次电子和反射电子。因此在图案检查中同时确定缺陷，并且与电子光学系统的数量成比例地改进检查的生产量。版权所有（C）2009，JPO＆INPIT

8. 发明专利

JP2005311386A Wafer inspection device 有权
标题翻译：波形检测装置
公开(公告)号：JP2005311386A
公开(公告)日：2005-11-04
申请号：JP2005134893
申请日：2005-05-06
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： YAJIMA YUSUKE , UMEMURA KAORU , TAJI SHINICHI , MURAKOSHI HISAYA , SHINADA HIROYUKI , NOZOE MARI , TAKATO ATSUKO , HASEGAWA MASAKI , MAKINO HIROSHI
IPC分类号： B23K15/00 , H01J37/20 , H01J37/30 , H01L21/66
摘要： PROBLEM TO BE SOLVED: To provide an inspection device, capable of performing the visual inspection of a semiconductor at a high speed with high resolution and uniformly preparing a sample for TEM observation and various analyses, with high position accuracy, from a region where foreign matters or defects exist.
SOLUTION: A scanning electron microscope section (SEM section) 1 for wafer inspection and an ion beam section 101 for preparing and processing a sample are provided side by side in the same inspection device, it is designed to consistenly perform visual inspection of the wafer 7 with the SEM section 1 and an extraction and processing of the specimen for the TEM observation and various analyses from the region, where defects (foreign matters or defective patterns) are present on the wafer 7 on the stage 8, based on the results of the inspection.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种检查装置，能够以高分辨率高速度地进行半导体的目视检查，并且从位置精确度均匀地制备用于TEM观察的样本和各种分析存在异物或缺陷。解决方案：用于晶片检查的扫描电子显微镜部分（SEM部分）1和用于制备和处理样品的离子束部分101并排地设置在同一检查装置中，其被设计为一致地执行目视检查具有SEM部分1的晶片7以及用于TEM观察的样本的提取和处理以及在阶段8上的晶片7上存在缺陷（异物或缺陷图案）的区域的各种分析，基于检查结果。版权所有（C）2006，JPO＆NCIPI

9. 发明专利

JP2009245953A Inspection method using electron beam, and inspection device 有权
标题翻译：使用电子束的检查方法和检查装置
公开(公告)号：JP2009245953A
公开(公告)日：2009-10-22
申请号：JP2009174889
申请日：2009-07-28
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： IWABUCHI HIROKO , TODOKORO HIDEO , MORI HIROYOSHI , SATO MITSUGI , USAMI YASUTSUGU , ICHIHASHI MIKIO , FUKUHARA SATORU , SHINADA HIROYUKI , KANEKO YUTAKA , SUGIYAMA KATSUYA , TAKATO ATSUKO , TOOYAMA HIROSHI
IPC分类号： H01J37/28 , H01J37/147 , H01J37/244 , H01J37/29 , H01L21/66
摘要： PROBLEM TO BE SOLVED: To provide: an inspection method using an electron beam and capable of increasing the speed of inspection; and an inspection device. SOLUTION: An electron beam 36 from an electron gun 1 is converged by an objective lens 9, and decelerated by a retarding voltage applied to a sample 13; the sample 13 is scanned by the electron beam while moving; secondary electrons 33 generated from the sample 13 are accelerated by the retarding voltage, formed into a nearly parallel beam, deflected by an E×B deflector 18 arranged between the objective lens 9 and the sample 13 to irradiate a secondary electron generator 19; and second secondary electrons 20 are generated from the secondary electron generator 19 and detected by a charged particle detector 21. An output signal generated by the detection thereof is stored as an image signal, the stored image is compared in a calculation part 29 and a defect determination part 30, and a defect is determined. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供：使用电子束的检查方法并且能够提高检查速度; 和检查装置。解决方案：来自电子枪1的电子束36被物镜9会聚，并通过施加到样品13的延迟电压而减速; 移动时样品13被电子束扫描; 由样品13产生的二次电子33被延迟电压加速，形成为几乎平行的光束，该光束由布置在物镜9和样品13之间的E×B偏转器18偏转，以照射二次电子发生器19; 并且从二次电子发生器19产生第二二次电子20并由带电粒子检测器21检测。通过检测产生的输出信号作为图像信号存储，在计算部分29中比较存储的图像和缺陷确定部分30，并且确定缺陷。版权所有（C）2010，JPO＆INPIT

10. 发明专利

JP2008198617A Wafer test device 有权
标题翻译： WAFER测试设备
公开(公告)号：JP2008198617A
公开(公告)日：2008-08-28
申请号：JP2008073564
申请日：2008-03-21
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： YAJIMA YUSUKE , UMEMURA KAORU , TAJI SHINICHI , MURAKOSHI HISAYA , SHINADA HIROYUKI , NOZOE MARI , TAKATO ATSUKO , HASEGAWA MASAKI , MAKINO HIROSHI
IPC分类号： H01J37/28 , H01J37/20 , H01J37/317 , H01L21/66
摘要： PROBLEM TO BE SOLVED: To provide a test device capable of testing the appearance of a semiconductor wafer at high speed with high resolution and capable of consistently preparing samples for TEM observation and various kinds of analyses from a region where foreign matters or flaws exist with high positional accuracy.
SOLUTION: In the same test device, a scanning electron microscope part (SEM part) 1 for wafer test together with an ion beam part 101 for preparing and processing the samples is installed. The appearance test of the wafer 7 with the SEM part 1, and extraction processing work of the samples for the TEM observation and the various kinds of the analyses from the region where the flaws (foreign matters or pattern flaw) exist on the wafer 7 based on results of the appearance test are made to be consistently carried out on the same stage 8.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种能够以高分辨率高速测试半导体晶片的外观的测试装置，并能够一致地制备用于TEM观察的样品和来自异物或缺陷的区域的各种分析存在高位置精度。解决方案：在相同的测试装置中，安装用于晶片测试的扫描电子显微镜部分（SEM部分）1和用于制备和处理样品的离子束部分101。基于SEM部件1的晶片7的外观试验和TEM观察用样品的提取处理工作以及在晶片7上存在缺陷（异物或图案缺陷）的区域的各种分析对外观测试结果进行一致地在同一阶段进行。8.版权所有（C）2008，JPO＆INPIT

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