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1. 发明专利

JP2002273198A METHOD AND APPARATUS FOR ADJUSTING GAS CIRCULATING AMOUNT OF VACUUM EXHAUST DEVICE 失效
公开(公告)号：JP2002273198A
公开(公告)日：2002-09-24
申请号：JP2001082841
申请日：2001-03-22
申请人： EBARA CORP , TOSHIBA CORP
发明人： KAWASAKI HIROYUKI , OIWA NORIHISA , SAKAI ITSUKO
IPC分类号： B01J3/00 , B01J3/02 , C23C16/44 , C23C16/455 , H01L21/02 , H01L21/205 , H01L21/302 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide a method and an apparatus for adjusting the gas circulating amount of a vacuum exhaust device capable of easily adjusting the circulating flow rate of the gas returned to a vacuum chamber through a gas flow rate circulating line even if the difference pressure of a gas circulating line part is not more than the operation pressure (50 kPa) of a gas flowmeter. SOLUTION: In the method for adjusting the gas circulating amount of the vacuum exhaust device equipped with the vacuum chamber 1 for introducing gas, a first vacuum pump 5 for reducing the pressure in the vacuum chamber 1 to a desired pressure, a second vacuum pump 7 reducing the back pressure of the first vacuum pump 5 to allowable back pressure or less, and a gas circulating line 8 for again returning a part of the gas discharged from the first vacuum pump 5 into the vacuum chamber 1, the relation of formula: Q2 =C×(Pd-Pc) (wherein, Q2 is the circulating flow rate of the gas returned to the vacuum chamber 1 through the gas circulating line 8, Pc is the pressure in the vacuum chamber, Pd is the pressure of the upstream part of the gas circulating line and C is the conductance of the gas circulating line) is used to change the effective exhaust speed of the second vacuum pump 7 and the difference pressure Pd-Pc of the gas circulating line is adjusted to adjust the gas circulating flow rate Q2 .

2. 发明专利

JP2006295048A Semiconductor device 审中-公开
标题翻译：半导体器件
公开(公告)号：JP2006295048A
公开(公告)日：2006-10-26
申请号：JP2005117043
申请日：2005-04-14
申请人： Toshiba Corp , 株式会社東芝
发明人： TAKENAKA KEIICHI , YAHASHI KATSUNORI , SAKAI ITSUKO
IPC分类号： H01L27/108 , H01L21/8242
CPC分类号： H01L29/945 , H01L27/0207 , H01L27/1087
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device capable of leaving room between trenches in which capacitors are embedded.
SOLUTION: Memory cells MC1 and MC2 have capacitors embedded in the trenches 7. The trenches 7 are formed on a semiconductor substrate having a surface of plane direction of {100}. The cross section of the trench 7 is rectangular. The cross section of the trench 7 is inclined in the same orientation in which a word line WL extends.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供能够在其中嵌入电容器的沟槽之间留下空间的半导体器件。解决方案：存储单元MC1和MC2具有嵌入在沟槽7中的电容器。沟槽7形成在具有ä100}平面方向表面的半导体衬底上。沟槽7的横截面是矩形的。沟槽7的横截面沿着字线WL延伸的相同方向倾斜。版权所有（C）2007，JPO＆INPIT

3. 发明专利

JP2006186323A PLASMA PROCESSING APPARATUS 审中-公开
公开(公告)号：JP2006186323A
公开(公告)日：2006-07-13
申请号：JP2005330251
申请日：2005-11-15
申请人： TOKYO ELECTRON LTD , TOSHIBA CORP
发明人： HIMORI SHINJI , IMAI NORIAKI , HORIGUCHI KATSUMI , NEZU TAKAAKI , MATSUYAMA SHOICHIRO , MATSUMARU HIROKI , HAYAMIZU TOSHIYASU , NAGASEKI KAZUYA , SAKAI ITSUKO , OIWA NORIHISA , SUGIYASU YOSHIKAZU
IPC分类号： H01L21/3065 , C23C16/505 , H05H1/46
摘要： PROBLEM TO BE SOLVED: To provide a plasma processing apparatus of capacity coupling type capable of forming uniform plasma efficiently, with a high uniformity within field of plasma treatment, and hardly causing charge up damage. SOLUTION: A plasma processing apparatus of capacity coupling type 100 comprises a chamber 1 held in vacuum atmosphere; a first and a second electrodes 2, 18 one side of which holds a processed substrate W by being arranged to face each other inside the chamber 1; a plasma generating arrangement 10 generating a plasma of processing gas, by forming high frequency field between the first and the second electrodes 2, 18; and a component 25 grounded in direct current by being arranged at an outside location of the processed substrate W in a plasma generating region R in the chamber 1. COPYRIGHT: (C)2006,JPO&NCIPI

4. 发明专利

JP2002217166A CLEANING METHOD OF GAS PROCESSING EQUIPMENT 失效
公开(公告)号：JP2002217166A
公开(公告)日：2002-08-02
申请号：JP2001012257
申请日：2001-01-19
申请人： TOSHIBA CORP
发明人： SAKAI ITSUKO , OIWA NORIHISA
IPC分类号： H01L21/302 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To effectively clean a stacked material in a circulation path in a gas processing equipment in which gas is circulated and recycled. SOLUTION: A cleaning method is provided for cleaning the gas processing equipment which comprises a processing unit 11 for carrying out a fixed process by introducing a process gas, a first exhaust unit 22, a secondary exhaust unit 23, first piping 25 and 28 for supplying a portion of an exhausted gas from the first exhaust unit and a secondary piping 27 branched from a first piping and connected to a secondary exhaust unit. The equipment has a gas circulation function of carrying out a fixed process to circulate a process gas from the gas exhaust unit of the processing unit to the gas inlet part of the processing unit through the first exhaust unit and the first piping. In the cleaning method of the gas processing equipment, times required for carrying out a fixed process by circulating the process gas in the circulation path are added up and the stacked material stacked at least in the circulation path is removed by a dry cleaning process at a stage when the added up time approaches a fixed time.

5. 发明专利

JP2002100669A ELECTROSTATIC CHUCK AND ITS FABRICATION METHOD 失效
公开(公告)号：JP2002100669A
公开(公告)日：2002-04-05
申请号：JP2000287587
申请日：2000-09-21
申请人： TOSHIBA CORP
发明人： SAKAI ITSUKO , OKUMURA KATSUYA
IPC分类号： B23Q3/15 , H01L21/68 , H01L21/683
摘要： PROBLEM TO BE SOLVED: To provide a high quality and long life electrostatic chuck. SOLUTION: An electrostatic chuck which is for fixing a substrate to be treated by electrostatistic attraction in a vacuum treatment vessel. The chuck is provided with a thin film electrode (1) having a first plane in the side of the substrate to be treated, a second plane facing to the first plane, and an insulator layer (2) directly formed on the surface of the first thin film electrode (1). A part (2a) formed on the first plane of the above thin film electrode is composed of a polyimide layer.

6. 发明专利

JPH11195643A SUBSTRATE PROCESSING METHOD AND DEVICE 失效
公开(公告)号：JPH11195643A
公开(公告)日：1999-07-21
申请号：JP19958698
申请日：1998-06-30
申请人： TOSHIBA CORP
发明人： NODA ETSUO , IZEKI YASUSHI , HAYASHI KAZUO , SUGAWARA TORU , SAKAI ITSUKO
IPC分类号： H05H1/46 , C23F4/00 , H01L21/302 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To realize a substrate processing device which is capable of markedly improving plasma in spatial uniformity so as to display a magnetron-type feature at its maximum. SOLUTION: A magnetic field applying means 31 which applies a magnetic field possessed of a line of magnetic force which traverses the surface of a first electrode 2a is provided between the first electrode 24 and a second electrode 34, a high-frequency power is applied between the first electrode 24 and the second electrode 34 supplying processing gas between them. Processing gas is turned to plasma by the injection of a high-frequency electric power, and the processed substrate 20 on the first electrode 24 is subjected to plasma processing. In this case, the magnetic field applying means 31 is constituted to apply a magnetic field which is so distributed as to enable a magnetic field intensity over lines nearly vertical to the direction of a line of magnetic force which passes over the surface center of the first electrode 24 to become weaker at the periphery of the electrode 24 than at the center of the electrode 24.

7. 发明专利

JPH05226609A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH05226609A
公开(公告)日：1993-09-03
申请号：JP2357092
申请日：1992-02-10
申请人： TOSHIBA CORP
发明人： SAKAI ITSUKO , HAYASAKA NOBUO , OKANO HARUO
IPC分类号： H01L27/04 , H01L21/822 , H01L21/8242 , H01L27/10 , H01L27/108
摘要： PURPOSE:To make an unevenness on the surface of an electrode and then to materialize a highly integrated semiconductor device by down-flow etching a grain boundary of a polycrystalline substance selectively with halogen including gas. CONSTITUTION:An element isolation insulating film 102 is formed on the surface of a P-type silicon substrate 101. Then, on the whole surface, a silicon oxide film and a polycrystalline silicon film are deposited and patterned. After that, a gate insulating film 103 and a gate electrode 104 are formed. Then, ions are injected with the gate insulating film 103 and the gate electrode 104 used as a mask and a source and a drain region, both of which are formed of an n-type diffusion layer 105, are formed. Nextly, a silicon oxide film 106 is deposited and an opening is made in it to form a storage node contact 107. Then, a polycrystalline silicon film 109 is deposited on the whole surface and phosphorus is doped and the film 109 is patterned to form a capacitor lower electrode. And, the natural oxide film is removed and CF4 gas is dissolved and excited and a grain boundary of the capacitor lower electrode is selectively etched by down-flow processing to form a lot of recessed and protruding parts and thereby DRAM can be highly integrated.

8. 发明专利

JP2011071239A Method of manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：JP2011071239A
公开(公告)日：2011-04-07
申请号：JP2009219736
申请日：2009-09-24
申请人： Toshiba Corp , 株式会社東芝
发明人： KAWASAKI ATSUKO , HAGIWARA KENICHIRO , INOUE IKUKO , AKIYAMA KAZUTAKA , SAKAI ITSUKO , MATSUO MIE , SEKIGUCHI MASAHIRO , KOSEKI YOSHIAKI , NEKO HIROKI , TOTSUKA YASUSHI , NAKADATE KAZUHIKO , INOUE TAKUTO
IPC分类号： H01L21/3205 , H01L21/768 , H01L23/52 , H01L27/14
CPC分类号： H01L27/14683 , H01L21/76898 , H01L23/481 , H01L23/522 , H01L24/13 , H01L24/32 , H01L27/14618 , H01L2224/13111 , H01L2224/16 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/01322 , H01L2924/12043 , H01L2924/3025 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device with a through electrode that is adaptive to future microfabrication of elements. SOLUTION: The method of manufacturing the semiconductor device that includes a semiconductor substrate 10 having a first main surface and a second main surface facing the first main surface, an electrode pad 26 provided on the first main surface of the semiconductor substrate 10, and the through electrode 23 provided in a through-hole 100 penetrating between the first main surface and second main surface of the semiconductor substrate 10 and connected to the electrode pad 26, wherein the first main surface side of the through-hole 100 includes a first connection part to which the electrode pad 26 and through electrode 23 are directly connected and a second connection part to which the electrode pad 26 and through electrode 23 are indirectly connected. The method includes the processes of: forming the electrode pad 26 on the first main surface; working the semiconductor substrate 10 and forming the through-hole 100, wherein a part of the electrode pad 26 is exposed in the through-hole 100; and forming the through electrode 23 in the through-hole 100. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种制造具有适应于元素的未来微细加工的通孔的半导体器件的方法。解决方案：制造半导体器件的方法包括具有第一主表面和面向第一主表面的第二主表面的半导体衬底10，设置在半导体衬底10的第一主表面上的电极焊盘26，通孔电极23设置在通孔100中，该通孔100贯通半导体基板10的第一主表面和第二主表面之间并连接到电极焊盘26，其中通孔100的第一主表面侧包括第一电极焊盘26和贯通电极23直接连接的连接部分和电极焊盘26和贯通电极23间接连接的第二连接部。该方法包括以下处理：在第一主表面上形成电极焊盘26; 加工半导体衬底10并形成通孔100，其中电极焊盘26的一部分暴露在通孔100中; 并在通孔100中形成贯通电极23.版权所有（C）2011，JPO＆INPIT

9. 发明专利

JP2006237356A Manufacturing method of semiconductor device 审中-公开
标题翻译：半导体器件的制造方法
公开(公告)号：JP2006237356A
公开(公告)日：2006-09-07
申请号：JP2005051018
申请日：2005-02-25
申请人： Toshiba Corp , 株式会社東芝
发明人： YAHASHI KATSUNORI , TAKENAKA KEIICHI , SAKAI ITSUKO
IPC分类号： H01L21/3065 , H01L21/822 , H01L21/8242 , H01L27/04 , H01L27/108
摘要： PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device with which a trench of a high aspect ratio can be formed.
SOLUTION: A trench 37 is formed on a silicon substrate 21 using a first mixed gas composed of HBr gas, O
2 gas and NF
3 gas as an etching gas. If the aspect ratio of the trench 37 reaches 20 or more, the etching gas is changed into a second mixed gas comprised of HBr gas, O
2 gas and CF
4 gas, and a trench 37 of which the aspect ratio is 50 or more, is formed.
COPYRIGHT: (C)2006,JPO&NCIPI

10. 发明专利

JP2004214520A Semiconductor device comprising trench capacitor and its manufacturing method 有权
公开(公告)号：JP2004214520A
公开(公告)日：2004-07-29
申请号：JP2003001740
申请日：2003-01-08
申请人： Toshiba Corp , 株式会社東芝
发明人： TAKENAKA KEIICHI , SAKAI ITSUKO , NARITA MASAKI , OIWA NORIHISA , MITA ATSUO , YAHASHI KATSUNORI
IPC分类号： H01L21/3065 , H01L21/334 , H01L21/82 , H01L21/8242 , H01L27/108 , H01L29/94
CPC分类号： H01L27/1087 , H01L27/10829 , H01L29/66181 , H01L29/945
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device comprising a trench capacitor which is provided with roughened capacitor electrodes for increasing the electric capacity of the trench capacitor wherein shapes and positions of roughened portions are controlled with good precision, and to provide a method for manufacturing the same.
SOLUTION: The trench capacitor is arranged such that each trench 8 formed in a silicon substrate 1 by dry etching has narrowed portions 9, i.e. portions of which the diameters are small, which are obtained by changing dry etching conditions in forming the trench 8; and that a first capacitor electrode 10 is formed in the silicon substrate 1 so as to enclose the trench 8 comprising the narrowed portions 9.
COPYRIGHT: (C)2004,JPO&NCIPI

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