专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明专利

JP2012033891A Plasma processing method and semiconductor device manufacturing method 有权
标题翻译：等离子体处理方法和半导体器件制造方法
公开(公告)号：JP2012033891A
公开(公告)日：2012-02-16
申请号：JP2011129790
申请日：2011-06-10
申请人： Tokyo Electron Ltd , Toshiba Corp , 東京エレクトロン株式会社 , 株式会社東芝
发明人： TAWARA SHIGERU , NISHIMURA EIICHI , YAMASHITA FUMIKO , TOMITA HIROSHI , OIWA NORIHISA , OGUCHI HISASHI , OMURA MITSUHIRO
IPC分类号： H01L21/3065 , H01L21/304 , H01L21/3205 , H01L21/3213 , H01L23/52
CPC分类号： H01L21/02071
摘要： PROBLEM TO BE SOLVED: To provide a plasma processing method and a semiconductor device manufacturing method capable of effectively removing deposits including metal accumulated on a pattern sidewall by dry processing while suppressing pattern thinning by side etching.SOLUTION: A plasma processing method for forming a pattern having a metal layer in a laminate structure through a step of plasma-etching the metal layer formed on a substrate and then removing deposits accumulated in a pattern sidewall part and including metal that constitutes the metal layer comprises: a protective layer formation step of forming an oxide or chloride of the metal in the sidewall part of the metal layer; a deposit removal step of removing the deposits by the action of plasma of gas including a fluorine atom; and a reduction step of reducing the oxide or chloride of the metal by the action of plasma including hydrogen after the protective layer formation step and the deposit removal step.
摘要翻译：解决的问题：提供一种等离子体处理方法和半导体器件制造方法，其能够通过干法处理有效地除去堆积在图案侧壁上的金属的沉积物，同时通过侧面蚀刻抑制图案变薄。解决方案：一种等离子体处理方法，用于通过等离子体蚀刻形成在基板上的金属层，然后去除积聚在图案侧壁部分中的沉积物并包括构成的金属的步骤，在层叠结构中形成具有金属层的图案金属层包括：保护层形成步骤，在金属层的侧壁部分形成金属的氧化物或氯化物; 沉积物去除步骤，通过包含氟原子的气体的等离子体的作用除去沉积物; 以及还原步骤，在保护层形成步骤和沉积物去除步骤之后，通过包括氢的等离子体的作用还原金属的氧化物或氯化物。版权所有（C）2012，JPO＆INPIT

2. 发明专利

JP2011249559A Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：JP2011249559A
公开(公告)日：2011-12-08
申请号：JP2010121238
申请日：2010-05-27
申请人： Toshiba Corp , 株式会社東芝
发明人： SASAKI TOSHIYUKI , OIWA NORIHISA , YAHASHI KATSUNORI , IIDA NORIKO
IPC分类号： H01L27/115 , H01L21/8247 , H01L29/788 , H01L29/792
CPC分类号： H01L29/7926 , H01L21/84 , H01L27/11578 , H01L27/11582 , H01L27/1203 , H01L29/66833
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device capable of reducing variation in device characteristics and process, and to provide a method of manufacturing the same.SOLUTION: A semiconductor device comprises a substrate 10, a lower gate layer BG, a laminate, a dummy electrode layer DWL, an insulator film 30, and channel bodies 20 and 45. The lower gate layer BG is provided on the substrate 10. The laminate includes a plurality of insulator layers and a plurality of electrode layers WL that are alternately laminated on the lower gate layer BG. The dummy electrode layer DWL is provided between the lower gate layer BG and the laminate, is composed of the same material as that of the electrode layer WL, and is thicker than each electrode layer WL. The insulator film 30 includes a charge storage film that is provided on a side wall of a hole MH formed through the laminate and the dummy electrode layer. The channel bodies 20 and 45 are provided on an inner side of the insulator film 30 in the hole MH.
摘要翻译：要解决的问题：提供能够减少器件特性和工艺的变化的半导体器件，并提供其制造方法。解决方案：半导体器件包括衬底10，下栅极层BG，层压体，虚设电极层DWL，绝缘膜30和沟道体20和45.下栅极层BG设置在衬底上层叠体包括交替层叠在下栅极层BG上的多个绝缘体层和多个电极层WL。虚设电极层DWL设置在下栅极层BG和层叠体之间，由与电极层WL相同的材料构成，并且比各电极层WL厚。绝缘膜30包括设置在通过层压体形成的孔MH的侧壁和虚拟电极层的电荷存储膜。通道体20和45设置在孔MH中的绝缘膜30的内侧。版权所有（C）2012，JPO＆INPIT

3. 发明专利

JP2011142248A Method and device for cleaning substrate 有权
标题翻译：清洗基板的方法和装置
公开(公告)号：JP2011142248A
公开(公告)日：2011-07-21
申请号：JP2010002720
申请日：2010-01-08
申请人： Tokyo Electron Ltd , Toshiba Corp , 東京エレクトロン株式会社 , 株式会社東芝
发明人： TAWARA SHIGERU , YAMASHITA FUMIKO , NISHIMURA EIICHI , OIWA NORIHISA , MATSUSHITA TAKAYA , TOMITA HIROSHI
IPC分类号： H01L21/304 , H01L21/027 , H01L21/3065
CPC分类号： H01L21/67028 , H01L21/02057
摘要： PROBLEM TO BE SOLVED: To provide a method and device for cleaning a substrate which remove a by-product and residual fluorine without damaging a pattern including an exposed portion of a silicon layer when forming the pattern by plasma etching.
SOLUTION: In the method for cleaning the substrate, the surface of a substrate is cleaned after a pattern is formed on the substrate by plasma etching. The method includes a by-product removing step of exposing the substrate to an HF-gas atmosphere to remove the by-product, and a residual-fluorine removing step of plasmanizing cleaning gas containing hydrogen gas and gas of a compound containing carbon and hydrogen as constituent elements, and causing the plasma cleaning gas to act on the substrate to remove residual fluorine on the substrate.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于清洁基板的方法和装置，其在通过等离子体蚀刻形成图案时，不会损坏包括硅层的暴露部分的图案，而不会损坏副产物和残余氟。解决方案：在清洁基板的方法中，在通过等离子体蚀刻在基板上形成图案之后，清洁基板的表面。该方法包括将基板暴露于HF气体气氛以除去副产物的副产物除去步骤，以及将含有氢气的清洗气体和含有碳和氢的化合物的气体等离子化的残余氟除去步骤作为构成元件，并且使等离子体清洁气体作用在基板上以除去基板上的残余氟。版权所有（C）2011，JPO＆INPIT

4. 发明专利

JP2005127797A Optical process monitoring device, optical process monitoring method, and manufacturing method of semiconductor device 有权
标题翻译：光学过程监测装置，光学过程监测方法和半导体器件的制造方法
公开(公告)号：JP2005127797A
公开(公告)日：2005-05-19
申请号：JP2003362134
申请日：2003-10-22
申请人： Toshiba Corp , 株式会社東芝
发明人： SAKAI TAKAYUKI , KIBE MASANOBU , OIWA NORIHISA
IPC分类号： G01B11/02 , G01B11/06 , G01B11/22 , G01N15/02 , H01L21/3065 , H01L21/66 , H01L21/768
CPC分类号： H01L21/76802 , G01B11/0625 , G01B11/0683 , G01B11/22 , H01J37/32935 , H01J37/32972 , H01L22/26 , H01L2924/0002 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide an optical process monitoring device generating no noise in a detected waveform spectrum. SOLUTION: This device is equipped with a polarizer 60 for polarizing inspection light hν i and a monitoring window 54 arranged so that the optical axis A is coincident on a plane P of polarization of the inspection light hν i . COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种在检测的波形谱中不产生噪声的光学过程监视装置。解决方案：该装置配备有用于偏振检查光的偏振器60，以及监视窗口54，其被布置成使得光轴A在检查光的偏振面P上重合 hν我。版权所有（C）2005，JPO＆NCIPI

5. 发明专利

JP2003109955A SEMICONDUCTOR DEVICE AND ITS FABRICATING METHOD 审中-公开
公开(公告)号：JP2003109955A
公开(公告)日：2003-04-11
申请号：JP2001305147
申请日：2001-10-01
申请人： TOSHIBA CORP
发明人： KOJIMA AKIHIRO , OIWA NORIHISA , UOZUMI NOBUHIRO , JINBO SADAYUKI , NADAHARA SOICHI
IPC分类号： H01L21/3205 , H01L23/52
摘要： PROBLEM TO BE SOLVED: To solve the problems incident to the use of copper (Cu) as an interconnection material that the oxidation of copper (Cu) progresses quickly, the line resistance and the connection resistance between lines are increased, and the reliability of interconnection structure is lowered. SOLUTION: The progress of the oxidation of a copper (Cu) interconnection layer 104 is suppressed by supplying oxygen plasma 105 to the surface layer thereof thereby forming an oxidation layer 106 where the number of CuO bonds is larger than that of Cu2 O bonds (e.g. CuO bonds occupy 50% or more).

6. 发明专利

JP2002313776A DRY ETCHING METHOD AND DRY ETCHING DEVICE 失效
公开(公告)号：JP2002313776A
公开(公告)日：2002-10-25
申请号：JP2001121257
申请日：2001-04-19
申请人： TOSHIBA CORP
发明人： SAKAI TAKAYUKI , OIWA NORIHISA
IPC分类号： H01L21/302 , H01L21/3065 , H01L21/311
摘要： PROBLEM TO BE SOLVED: To provide a substituting gas for a fluorocarbon-based gas to be used for dry etching an SiO2 film and to contribute to suppression of global warming. SOLUTION: A dry etching method is for etching the SiO2 film 402 on an Si substrate 401 in a gas atmosphere. The gas mixture of F2 which is a fluorine- based gas not containing carbon and ethanol which is an organic gas not containing fluorine is used as an etching gas, the ratio of the ethanol in the gas mixture is set to 10% and the SiO2 film 402 is selectively etched.

7. 发明专利

JP2002289561A SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD 失效
公开(公告)号：JP2002289561A
公开(公告)日：2002-10-04
申请号：JP2001092541
申请日：2001-03-28
申请人： TOSHIBA CORP
发明人： SASAKI KEIICHI , OIWA NORIHISA
IPC分类号： H01L21/306 , H01L21/301 , H01L21/312 , H01L21/318
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device and its manufacturing method which can reduce the width of a dicing region and restrain water content from permeating into an element forming region. SOLUTION: This manufacturing method is provided with a process for forming a trench 13 on an element forming surface side of a semiconductor substrate 11 by etching, a process for forming an insulating film 14 on an element forming surface and a side surface of the trench, and a process which divides the semiconductor substrate into a plurality of semiconductor chips by eliminating a rear side region of the semiconductor substrate until reaching a bottom surface of the trench.

8. 发明专利

JP2002273198A METHOD AND APPARATUS FOR ADJUSTING GAS CIRCULATING AMOUNT OF VACUUM EXHAUST DEVICE 失效
公开(公告)号：JP2002273198A
公开(公告)日：2002-09-24
申请号：JP2001082841
申请日：2001-03-22
申请人： EBARA CORP , TOSHIBA CORP
发明人： KAWASAKI HIROYUKI , OIWA NORIHISA , SAKAI ITSUKO
IPC分类号： B01J3/00 , B01J3/02 , C23C16/44 , C23C16/455 , H01L21/02 , H01L21/205 , H01L21/302 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide a method and an apparatus for adjusting the gas circulating amount of a vacuum exhaust device capable of easily adjusting the circulating flow rate of the gas returned to a vacuum chamber through a gas flow rate circulating line even if the difference pressure of a gas circulating line part is not more than the operation pressure (50 kPa) of a gas flowmeter. SOLUTION: In the method for adjusting the gas circulating amount of the vacuum exhaust device equipped with the vacuum chamber 1 for introducing gas, a first vacuum pump 5 for reducing the pressure in the vacuum chamber 1 to a desired pressure, a second vacuum pump 7 reducing the back pressure of the first vacuum pump 5 to allowable back pressure or less, and a gas circulating line 8 for again returning a part of the gas discharged from the first vacuum pump 5 into the vacuum chamber 1, the relation of formula: Q2 =C×(Pd-Pc) (wherein, Q2 is the circulating flow rate of the gas returned to the vacuum chamber 1 through the gas circulating line 8, Pc is the pressure in the vacuum chamber, Pd is the pressure of the upstream part of the gas circulating line and C is the conductance of the gas circulating line) is used to change the effective exhaust speed of the second vacuum pump 7 and the difference pressure Pd-Pc of the gas circulating line is adjusted to adjust the gas circulating flow rate Q2 .

9. 发明专利

JP2002093870A ETCHING-DEPTH MEASURING METHOD AND APPARATUS, AND ETCHING METHOD 失效
公开(公告)号：JP2002093870A
公开(公告)日：2002-03-29
申请号：JP2000275162
申请日：2000-09-11
申请人： TOSHIBA CORP
发明人： SAKAI TAKAYUKI , MIYOSHI MOTOSUKE , MIKAMI TORU , KIKUCHI TOSHIHIKO , OIWA NORIHISA
IPC分类号： G01B11/22 , C23F4/00 , H01L21/302 , H01L21/3065 , H01L21/66
摘要： PROBLEM TO BE SOLVED: To provide an etching-depth measuring apparatus which can measure the depth of a wiring groove in a damascene processing with high accuracy. SOLUTION: The etching-depth measuring apparatus includes a light source 12 for irradiating light onto a substrate 16, having an etching groove made in an insulating film layer arranged in an upper part of a wiring structure, a detector 24 for detecting the part of light reflected from the substrate 16 and having wavelengths longer than twice the wiring spacing of the wiring structure, and a calculator 26 for calculating at least either the thickness of the insulating film layer or the depth of the etching depth, on the basis of the intensity of light detected by the detector 24.

10. 发明专利

JP2001274487A EXCIMER LASER DEVICE, ALIGNER AND MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE 失效
公开(公告)号：JP2001274487A
公开(公告)日：2001-10-05
申请号：JP2000085254
申请日：2000-03-24
申请人： TOSHIBA CORP
发明人： HASUNUMA MASAHIKO , KANEKO HISAFUMI , OIWA NORIHISA
IPC分类号： G03F7/20 , H01L21/027 , H01S3/038 , H01S3/225
摘要： PROBLEM TO BE SOLVED: To obtain a KrF excimer laser device in which corrosion due to F of its discharge electrodes is prevented at low costs. SOLUTION: As the discharge electrodes 4, Cu electrodes whose surface contains an element at L. Pauling's electronegativity of 1.2 or more are used.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式