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1. 发明专利

JP2010219425A Semiconductor device 审中-公开
标题翻译：半导体器件
公开(公告)号：JP2010219425A
公开(公告)日：2010-09-30
申请号：JP2009066637
申请日：2009-03-18
申请人： Toshiba Corp , 株式会社東芝
发明人： HAGIWARA KENICHIRO , INOUE IKUKO
IPC分类号： H01L21/3205 , H01L21/822 , H01L23/52 , H01L27/04 , H01L27/146
CPC分类号： H01L27/14636 , H01L21/76898 , H01L23/481 , H01L23/585 , H01L24/05 , H01L24/48 , H01L27/1464 , H01L27/14683 , H01L2224/02126 , H01L2224/02166 , H01L2224/04042 , H01L2224/05093 , H01L2224/05096 , H01L2224/05556 , H01L2224/05599 , H01L2224/451 , H01L2224/48095 , H01L2224/48463 , H01L2224/85399 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01014 , H01L2924/01033 , H01L2924/01078 , H01L2924/12043 , H01L2924/13091 , H01L2924/14 , H01L2924/30105 , H01L2224/45099 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device reducing influence of noise. SOLUTION: This semiconductor device includes: wires or electrodes respectively formed on the front surface side and the back surface side of a semiconductor substrate; penetration electrodes 35 formed to penetrate both the front and back surfaces of the semiconductor substrate for electrically connecting the wires or electrodes formed on the front surface side of the semiconductor substrate to the wires or electrodes formed on the back surface side of the semiconductor substrate; and guard ring wiring 51 formed to penetrate both the front and back surfaces of the semiconductor substrate and surround the penetration electrodes and connected to the ground potential. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供减少噪声影响的半导体器件。解决方案：该半导体器件包括：分别形成在半导体衬底的表面侧和背面侧的线或电极; 穿透电极35形成为穿透半导体衬底的前表面和后表面，用于将形成在半导体衬底的前表面侧上的电线或电极电连接到形成在半导体衬底的背面侧上的电线或电极; 以及保护环布线51，其形成为穿透半导体基板的前表面和后表面，并且包围穿透电极并连接到地电位。版权所有（C）2010，JPO＆INPIT

2. 发明专利

JP2010156808A Lens unit, camera module using same, and method of manufacturing lens unit 审中-公开
标题翻译：透镜单元，使用相机的相机模块以及制造透镜单元的方法
公开(公告)号：JP2010156808A
公开(公告)日：2010-07-15
申请号：JP2008334638
申请日：2008-12-26
申请人： Toshiba Corp , 株式会社東芝
发明人： HAGIWARA KENICHIRO , SEKINE KOICHI
IPC分类号： G02B7/02 , G02B3/00 , H04N5/225 , H04N5/335
摘要： PROBLEM TO BE SOLVED: To manufacture a lens unit made of resin without using a glass substrate. SOLUTION: The lens unit is provided with a case 10 made of a resin material and having a cylindrical through-hole 11 formed with a collar part 12 over the whole circumference on a sidewall part in a substantially middle position inside the through-hole 11, and a lens 42 made of a translucent resin material and formed in the through-hole 11 in a state of holding the collar part 12 in between. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：制造不使用玻璃基板的树脂制的透镜单元。解决方案：透镜单元设置有由树脂材料制成的壳体10，并且具有圆形通孔11，该圆形通孔11在贯通孔11的大致中间位置的大致中间的侧壁部分的整个圆周上形成有凸缘部分12。孔11以及由透光性树脂材料制成的透镜42，并且形成在通孔11中的状态下，将套环部12保持在其间。版权所有（C）2010，JPO＆INPIT

3. 发明专利

JP2012070102A Imaging apparatus and manufacturing method thereof 有权
标题翻译：成像装置及其制造方法
公开(公告)号：JP2012070102A
公开(公告)日：2012-04-05
申请号：JP2010211431
申请日：2010-09-21
申请人： Toshiba Corp , 株式会社東芝
发明人： KAWASAKI ATSUKO , HAGIWARA KENICHIRO , SEKINE KOICHI
IPC分类号： H04N5/225 , G02B7/02 , H04N5/232
CPC分类号： H01L27/14618 , H01L27/14625 , H01L2224/13
摘要： PROBLEM TO BE SOLVED: To provide an imaging apparatus advantageous to miniaturization, and also to provide a manufacturing method thereof.SOLUTION: An imaging apparatus of the embodiment includes: a semiconductor substrate 11 with multiple pixels 6 arranged thereon; a transparent substrate 17 including first through electrodes 23 arranged in previously penetrated openings (17a, 17b); second through electrodes 22 exposed on the pixels and connected to the first through electrodes 23; an adhesive material 16 for performing adhesion between the semiconductor substrate 11 and the transparent substrate 17; and an imaging lens part 26 arranged on the transparent substrate.
摘要翻译：要解决的问题：提供有利于小型化的成像装置，并且还提供其制造方法。解决方案：本实施例的成像装置包括：配置有多个像素6的半导体基板11; 包括布置在预先穿透的开口（17a，17b）中的第一贯通电极23的透明基板17; 第二通过在像素上暴露并连接到第一贯通电极23的电极22; 用于在半导体衬底11和透明衬底17之间执行粘附的粘合材料16; 以及配置在透明基板上的摄像透镜部26。版权所有（C）2012，JPO＆INPIT

4. 发明专利

JP2011071239A Method of manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：JP2011071239A
公开(公告)日：2011-04-07
申请号：JP2009219736
申请日：2009-09-24
申请人： Toshiba Corp , 株式会社東芝
发明人： KAWASAKI ATSUKO , HAGIWARA KENICHIRO , INOUE IKUKO , AKIYAMA KAZUTAKA , SAKAI ITSUKO , MATSUO MIE , SEKIGUCHI MASAHIRO , KOSEKI YOSHIAKI , NEKO HIROKI , TOTSUKA YASUSHI , NAKADATE KAZUHIKO , INOUE TAKUTO
IPC分类号： H01L21/3205 , H01L21/768 , H01L23/52 , H01L27/14
CPC分类号： H01L27/14683 , H01L21/76898 , H01L23/481 , H01L23/522 , H01L24/13 , H01L24/32 , H01L27/14618 , H01L2224/13111 , H01L2224/16 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/01322 , H01L2924/12043 , H01L2924/3025 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device with a through electrode that is adaptive to future microfabrication of elements. SOLUTION: The method of manufacturing the semiconductor device that includes a semiconductor substrate 10 having a first main surface and a second main surface facing the first main surface, an electrode pad 26 provided on the first main surface of the semiconductor substrate 10, and the through electrode 23 provided in a through-hole 100 penetrating between the first main surface and second main surface of the semiconductor substrate 10 and connected to the electrode pad 26, wherein the first main surface side of the through-hole 100 includes a first connection part to which the electrode pad 26 and through electrode 23 are directly connected and a second connection part to which the electrode pad 26 and through electrode 23 are indirectly connected. The method includes the processes of: forming the electrode pad 26 on the first main surface; working the semiconductor substrate 10 and forming the through-hole 100, wherein a part of the electrode pad 26 is exposed in the through-hole 100; and forming the through electrode 23 in the through-hole 100. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种制造具有适应于元素的未来微细加工的通孔的半导体器件的方法。解决方案：制造半导体器件的方法包括具有第一主表面和面向第一主表面的第二主表面的半导体衬底10，设置在半导体衬底10的第一主表面上的电极焊盘26，通孔电极23设置在通孔100中，该通孔100贯通半导体基板10的第一主表面和第二主表面之间并连接到电极焊盘26，其中通孔100的第一主表面侧包括第一电极焊盘26和贯通电极23直接连接的连接部分和电极焊盘26和贯通电极23间接连接的第二连接部。该方法包括以下处理：在第一主表面上形成电极焊盘26; 加工半导体衬底10并形成通孔100，其中电极焊盘26的一部分暴露在通孔100中; 并在通孔100中形成贯通电极23.版权所有（C）2011，JPO＆INPIT

5. 发明专利

JP2010056319A Method for manufacturing semiconductor device and semiconductor device 审中-公开
标题翻译：制造半导体器件和半导体器件的方法
公开(公告)号：JP2010056319A
公开(公告)日：2010-03-11
申请号：JP2008220095
申请日：2008-08-28
申请人： Toshiba Corp , 株式会社東芝
发明人： HAGIWARA KENICHIRO
IPC分类号： H01L21/301 , H01L23/12 , H01L27/14
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing a high-quality semiconductor device suppressed in warpage in a heat treatment process with high productivity during dicing, and to provide the semiconductor device manufactured by the method.
SOLUTION: The method for manufacturing the semiconductor device includes: a step of forming a plurality of functional elements arranged in a matrix shape on a semiconductor substrate; a step of forming a photosensitive resin film on the surface on which functional elements of the wafer are formed; a step of forming grooves in a lattice like shape on the photosensitive resin film so that the plurality of functional elements formed in the matrix shape are demarcated; a step of bonding the wafer and a support substrate having almost the same size as the wafer via the photosensitive resin film; and a step of dicing the laminated board in which the wafer and the support substrate are bonded at each groove of the photosensitive resin film to divide the plurality of functional elements into discrete pieces.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种在切割期间以高生产率制造在热处理过程中翘曲抑制的高质量半导体器件的方法，并提供通过该方法制造的半导体器件。解决方案：半导体器件的制造方法包括：在半导体衬底上形成以矩阵形状布置的多个功能元件的步骤; 在形成有晶片的功能元件的表面上形成感光性树脂膜的工序; 在感光性树脂膜上形成格子状凹槽的步骤，以形成矩阵形状的多个功能元件被划定; 通过所述感光性树脂膜将所述晶片和与所述晶片大致相同尺寸的支撑基板接合的工序; 以及将所述晶片和所述支撑基板接合在所述感光性树脂膜的各个沟槽处的所述层压板的切割步骤，以将所述多个功能元件分割成离散件。版权所有（C）2010，JPO＆INPIT

6. 发明专利

JP2009087970A Method of manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：JP2009087970A
公开(公告)日：2009-04-23
申请号：JP2007251655
申请日：2007-09-27
申请人： Toshiba Corp , 株式会社東芝
发明人： SEKIGUCHI MASAHIRO , TAKANO EIJI , SHIRAKAWA TATSUHIKO , HAGIWARA KENICHIRO , DOI MASAYUKI , HARADA SUSUMU
IPC分类号： H01L21/02 , H01L21/3205 , H01L21/68 , H01L23/52 , H01L27/14
CPC分类号： H01L27/14687 , H01L21/561 , H01L21/568 , H01L23/481 , H01L23/544 , H01L27/14618 , H01L31/0203 , H01L2223/54493 , H01L2224/05001 , H01L2224/05022 , H01L2224/05548 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05655 , H01L2224/05666 , H01L2224/05671 , H01L2224/13 , H01L2924/14 , H01L2924/1461 , H01L2924/16195 , H01L2924/16235 , H01L2924/19041 , H01L2924/3025 , H01L2924/00 , H01L2924/00014
摘要： PROBLEM TO BE SOLVED: To improve manufacturing efficiency of a semiconductor device and reduce manufacturing cost by facilitating position detection of a semiconductor substrate having a supporting substrate formed thereon. SOLUTION: The semiconductor substrate 1 having a first notch 7 is stuck on the supporting substrate having a second notch 8 so that the first notch 7 may overlap on the second notch 8. A surface 1b opposite to a surface 1a opposite to the supporting substrate 2 of the semiconductor substrate 1 in which the supporting substrate 2 is stuck is processed, and the semiconductor substrate 1 is thinned to a predetermined thickness. In addition, a film forming process is executed for the processed surface 1b of the semiconductor substrate 1 as necessary. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：通过促进其上形成有支撑衬底的半导体衬底的位置检测来提高半导体器件的制造效率并降低制造成本。解决方案：具有第一凹口7的半导体衬底1被粘附在具有第二凹口8的支撑衬底上，使得第一凹口7可以在第二凹口8上重叠。与表面1a相对的表面1b 对其中粘附有支撑基板2的半导体基板1的支撑基板2进行处理，并将半导体基板1变薄到预定厚度。此外，根据需要对半导体基板1的被处理面1b进行成膜处理。版权所有（C）2009，JPO＆INPIT

7. 发明专利

JP2012019228A Semiconductor device 审中-公开
标题翻译：半导体器件
公开(公告)号：JP2012019228A
公开(公告)日：2012-01-26
申请号：JP2011193285
申请日：2011-09-05
申请人： Toshiba Corp , 株式会社東芝
发明人： HAGIWARA KENICHIRO , INOUE IKUKO
IPC分类号： H01L27/146 , H01L27/14 , H04N5/374
CPC分类号： H01L2224/451 , H01L2924/00014 , H01L2924/13091 , H01L2924/00 , H01L2224/48
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device capable of reducing influence of noise.SOLUTION: A semiconductor devise, as a rear-surface irradiation type solid-state imaging device in which incident light is irradiated from a second surface of a semiconductor substrate opposite to a surface including an integrated circuit and a photo diode, comprises: interconnections and electrodes formed each on a first surface and the second surface of the semiconductor substrate; through electrodes 34 that are formed so as to penetrate the first and second surfaces of the semiconductor substrate and electrically connect the interconnections and the electrodes formed on the first surface of the semiconductor substrate with the interconnections and the electrodes formed on the second surface of the semiconductor substrate; and a first guard ring interconnection 51 that penetrates the first and second surfaces of the semiconductor substrate and is formed so as to surround the through electrodes.
摘要翻译：要解决的问题：提供能够降低噪声影响的半导体器件。解决方案：作为背面照射型固体摄像器件的半导体器件，其中入射光从与集成电路和光电二极管的表面相反的半导体衬底的第二表面照射，包括：在半导体衬底的第一表面和第二表面上形成的互连和电极; 通过电极34形成为穿透半导体衬底的第一表面和第二表面，并且将形成在半导体衬底的第一表面上的互连和电极与形成在半导体的第二表面上的互连和电极电连接基质; 以及穿过半导体衬底的第一表面和第二表面并形成为围绕通孔的第一保护环互连51。版权所有（C）2012，JPO＆INPIT

8. 发明专利

JP2012204403A Solid-state imaging device and method of manufacturing the same 审中-公开
标题翻译：固态成像装置及其制造方法
公开(公告)号：JP2012204403A
公开(公告)日：2012-10-22
申请号：JP2011064930
申请日：2011-03-23
申请人： Toshiba Corp , 株式会社東芝
发明人： HAGIWARA KENICHIRO
IPC分类号： H01L27/14
CPC分类号： H01L27/14641 , H01L27/14618 , H01L27/14634 , H01L27/14636 , H01L27/14689 , H01L31/02325 , H01L2224/13
摘要： PROBLEM TO BE SOLVED: To reduce the size of a module.SOLUTION: A solid-state imaging device comprises: a semiconductor substrate 10 that has a first surface and a second surface facing the first surface; pixels 3 that are provided in the semiconductor substrate 10 and photoelectrically convert light radiated via lenses at the second surface side; a supporting substrate 19 that is formed on insulating films 92 and 96 covering an element 7 on the first surface and has a groove 69; and a device 60 that is formed on the insulating films 92 and 96 and is housed in the groove 69 of the supporting substrate 19.
摘要翻译：要解决的问题：减少模块的尺寸。解决方案：固态成像装置包括：半导体衬底10，其具有面向第一表面的第一表面和第二表面; 像素3，其设置在半导体衬底10中，并在第二表面侧对通过透镜辐射的光进行光电转换; 支撑基板19，其形成在覆盖第一表面上的元件7并且具有槽69的绝缘膜92和96上; 以及形成在绝缘膜92和96上并被容纳在支撑基板19的槽69中的装置60.版权所有（C）2013，JPO＆INPIT

9. 发明专利

JP2011009645A Semiconductor device and method of manufacturing the same 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：JP2011009645A
公开(公告)日：2011-01-13
申请号：JP2009154009
申请日：2009-06-29
申请人： Toshiba Corp , 株式会社東芝
发明人： HAYASAKI YUKO , HAGIWARA KENICHIRO
IPC分类号： H01L21/3205 , H01L23/52 , H01L27/14
CPC分类号： H01L27/14618 , H01L21/76898 , H01L23/481 , H01L27/14683 , H01L2224/02372 , H01L2224/0392 , H01L2224/0401 , H01L2224/05548 , H01L2224/13 , H01L2224/13022 , H01L2224/13024
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device capable of improving the reliability of a through-electrode with respect to the semiconductor device which has the through-electrode.SOLUTION: The semiconductor device includes an insulating film 25 formed on a first major surface of a silicon substrate 10, an electrode pad 26B formed in the insulating film 25 on the first major surface and including a conductive film such that at least a part of the conductive film includes a free region in which the conductive film is not present, a solder ball 18 formed on a second major surface opposed to the first major surface, and the through-electrode formed in a through-hole formed from the second major surface side of the semiconductor substrate 10 and reaching the electrode pad 26B, and electrically connecting the electrode pad 26B with a solder ball 18 to each other. The first insulating film 25 is present in the free region that the electrode pad 26B has, and a step, on a through-electrode side, between the first insulating film 25 being present in the free region and the electrode pad 26B is not greater than a thickness of the electrode pad 26B.
摘要翻译：要解决的问题：提供能够提高贯通电极相对于具有通孔的半导体器件的可靠性的半导体器件。解决方案：半导体器件包括形成在第一主表面上的绝缘膜25 硅基板10，形成在第一主表面上的绝缘膜25中的电极焊盘26B，并且包括导电膜，使得至少一部分导电膜包括不存在导电膜的自由区域，焊料球18形成在与第一主表面相对的第二主表面上，并且通孔形成在由半导体衬底10的第二主表面侧形成并且到达电极焊盘26B的通孔中，并且电连接电极垫26B与焊球18相互连接。第一绝缘膜25存在于电极焊盘26B具有的自由区域中，并且在直通电极侧的位于自由区域中的第一绝缘膜25与电极焊盘26B之间的台阶不大于电极焊盘26B的厚度。

10. 发明专利

JP2011003863A Semiconductor device and camera module 有权
标题翻译：半导体器件和相机模块
公开(公告)号：JP2011003863A
公开(公告)日：2011-01-06
申请号：JP2009148098
申请日：2009-06-22
申请人： Toshiba Corp , 株式会社東芝
发明人： MATSUO MIE , HAGIWARA KENICHIRO , KOMATSU AKIRA
IPC分类号： H01L23/12 , H01L21/3205 , H01L21/768 , H01L23/52 , H01L23/522 , H01L27/14 , H04N5/335 , H04N5/359 , H04N5/369 , H04N5/372 , H04N5/374
CPC分类号： H01L27/14618 , H01L21/76898 , H01L23/481 , H01L24/13 , H01L24/29 , H01L24/32 , H01L24/83 , H01L27/14625 , H01L27/14627 , H01L27/14685 , H01L2224/02372 , H01L2224/02381 , H01L2224/05001 , H01L2224/05008 , H01L2224/05147 , H01L2224/05155 , H01L2224/05166 , H01L2224/05181 , H01L2224/05548 , H01L2224/05569 , H01L2224/0558 , H01L2224/05647 , H01L2224/13022 , H01L2224/13099 , H01L2224/131 , H01L2224/83194 , H01L2224/9202 , H01L2924/0001 , H01L2924/01005 , H01L2924/01006 , H01L2924/01018 , H01L2924/01019 , H01L2924/01022 , H01L2924/01029 , H01L2924/01033 , H01L2924/01038 , H01L2924/0106 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01082 , H01L2924/014 , H01L2924/30105 , H01L2924/3025 , H01L2924/3512 , H01L2924/00 , H01L2924/00014
摘要： PROBLEM TO BE SOLVED: To achieve high speed operation while eliminating imprint such as ghost, wiring pattern or the like.SOLUTION: A semiconductor device 11 includes: a semiconductor substrate 111 on which a solid imaging element 11A as a semiconductor element is formed on a first surface; the wiring pattern 116 which is formed on a second surface of a side opposite to the first surface of the semiconductor substrate 111 and which includes a ground line in at least a part; a through electrode 116a which penetrates the semiconductor substrate 111 from the first surface through the second surface and which electrically connects the solid imaging element 11A and wiring pattern 116; and a GND plane 117 which is formed between the surfaces (or layers) to which the second surface of the semiconductor substrate 111 and wiring pattern 116 are extended and which is electrically connected to the ground line of the wiring pattern 116.
摘要翻译：要解决的问题：在消除诸如重影，布线图案等的印记的同时实现高速操作。解决方案：半导体器件11包括：半导体衬底111，其上形成有作为半导体元件的固体成像元件11A 第一表面形成在与半导体衬底111的第一表面相对的一侧的第二表面上并且在至少一部分中包括接地线的布线图案116; 贯通电极116a，其从第一表面穿过第二表面穿透半导体衬底111，并且电连接固体摄像元件11A和布线图案116; 以及形成在半导体衬底111和布线图案116的第二表面延伸并且与布线图案116的接地线电连接的表面（或多个层）之间的GND平面117。

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