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1. 发明专利

JP2006294627A Electron beam device and device manufacturing method using this device 审中-公开
标题翻译：电子束装置和使用该装置的装置制造方法
公开(公告)号：JP2006294627A
公开(公告)日：2006-10-26
申请号：JP2006122814
申请日：2006-04-27
申请人： Ebara Corp , 株式会社荏原製作所
发明人： NAKASUJI MAMORU , KATO TAKAO , NOMICHI SHINJI , SATAKE TORU , YOSHIKAWA SHOJI
IPC分类号： H01J37/21 , G01N23/225 , H01J37/153 , H01J37/28 , H01L21/66
摘要： PROBLEM TO BE SOLVED: To provide an electron beam device with a simple structure capable of performing measurement or the like of potential contrast with a high throughput and with high reliability, and a device manufacturing method for manufacturing a device at a good yield using this device. SOLUTION: The electron beam device which irradiates a test piece formed with a pattern by electron beam and evaluates the test piece comprises an electron optical lens barrel 1 housing an electron beam source EG, an objective lens 14, electromagnetic deflectors 11, 12, and a secondary electron beam detector 17. The objective lens 14 is constructed of an upper electrode 18, a center electrode 19, and a lower electrode 20, and furthermore has a control power supply 21 for impressing voltage on the upper electrode, the center electrode 19, and the lower electrode 20. The control power supply 21 impresses a voltage of a certain value to the center electrode 19 and, by performing dynamic focusing by the upper electrode 18, operates so that the objective lens 14 may satisfy focusing conditions. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供具有能够以高产量和高可靠性进行潜在对比度的测量等的简单结构的电子束装置，以及以良好的收率制造器件的器件制造方法使用此设备。解决方案：通过电子束照射形成图案的试片并评价试验片的电子束装置包括：电子束透镜筒1，容纳电子束源EG，物镜14，电磁偏转器11,12 和二次电子束检测器17.物镜14由上电极18，中心电极19和下电极20构成，还具有用于在上电极上施加电压的控制电源21，中心电极19和下部电极20.控制电源21向中心电极19施加一定值的电压，并且通过由上部电极18进行动态聚焦来进行动作，使得物镜14可以满足聚焦条件。版权所有（C）2007，JPO＆INPIT

2. 发明专利

JP2005085618A Electron beam device, and manufacturing method of device using the same 审中-公开
标题翻译：电子束装置，以及使用该装置的装置的制造方法
公开(公告)号：JP2005085618A
公开(公告)日：2005-03-31
申请号：JP2003316901
申请日：2003-09-09
申请人： Ebara Corp , 株式会社荏原製作所
发明人： NAKASUJI MAMORU , KATO TAKAO , SATAKE TORU , NOMICHI SHINJI
IPC分类号： H01L21/66 , H01J37/06 , H01J37/28
摘要： PROBLEM TO BE SOLVED: To obtain sufficient current at each beam of a multi beam, and reduce influence of aberration.
SOLUTION: The electron beam device comprises an electron gun 1 made of a TaC cathode 2 emitting four electron beams, optical systems (3, 4, 6, 8) forming primary electron multi-beams and irradiating them on a sample 9, deflectors 19, 20 for scanning the multi-beams on the sample, an E×B separator 7 deflecting secondary electron, a magnifying lens 10, a multi-anode 13 detecting each secondary electron beam from a scanning area of respective multi-beams independently, a CPU 15, and an image processing device 16. The electron beam device scans each multi-beam in a direction orthogonal to one axial direction ranging in a distance sufficiently larger than the distance between the beams, and the sample is estimated by being continuously moved in the one axial direction.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：为了在多光束的每个光束处获得足够的电流，并且减小像差的影响。解决方案：电子束装置包括由发射四个电子束的TaC阴极2制成的电子枪1，形成初级电子多光束的光学系统（3,4,6,8）并将其照射在样品9上，用于扫描样品上的多光束的偏转器19,20，偏转二次电子的E×B分离器7，放大透镜10，从各个多光束的扫描区域独立地检测每个二次电子束的多阳极13， CPU15和图像处理装置16.电子束装置在与一束轴方向正交的方向上扫描各多光束，其距离远大于光束之间的距离，通过连续移动来估计样本在一个轴向。版权所有（C）2005，JPO＆NCIPI

3. 发明专利

JP2004179129A Electron beam device and manufacturing method of device using the same 审中-公开
公开(公告)号：JP2004179129A
公开(公告)日：2004-06-24
申请号：JP2002347419
申请日：2002-11-29
申请人： Ebara Corp , 株式会社荏原製作所
发明人： NAKASUJI MAMORU , KATO TAKAO , SATAKE TORU
IPC分类号： H01L21/66 , H01J37/09 , H01J37/244 , H01J37/28 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide an electron beam device equipped with a secondary optical system in which the cross talk between the secondary electrons is not generated even if the number of electron beams is increased.
SOLUTION: The electron beam device comprises a primary optical system 10 which scans a plurality of locations on the sample by a plurality of electron beams, a secondary optical system 20 which converges the secondary electrons emitted from the sample S by the scanning of electron beams into a plurality of secondary electrons and introduces into each detector 31, and a detection system 30 which detects respectively the plurality of introduced secondary electrons. The plurality of secondary electrons, after passing through an objective lens 17 and an ExB separator 16, are widened in the interval between the secondary electrons by the multiple opening plate 23 having a plurality of openings, and then enter respectively into each detector 31 of the detection system 30, and are converted into optical signals. Then, they are converted into electrical signals by a PMT 33 and undergo image processing by an image forming device 35.
COPYRIGHT: (C)2004,JPO

4. 发明专利

JP2004177644A Electron beam device, and manufacturing method of device using it 审中-公开
公开(公告)号：JP2004177644A
公开(公告)日：2004-06-24
申请号：JP2002343473
申请日：2002-11-27
申请人： Ebara Corp , 株式会社荏原製作所
发明人： NAKASUJI MAMORU , KATO TAKAO , SATAKE TORU , NOMICHI SHINJI
IPC分类号： G01N23/04 , G03F1/84 , G03F1/86 , G03F7/20 , H01L21/027 , G03F1/08
摘要： PROBLEM TO BE SOLVED: To detect even a small defect with high throughput.
SOLUTION: An electron beam discharged from an electron gun 41 is irradiated onto a mask 44 to be checked via an irradiation lens 43 to form a crossover nearby a main surface of an objective lens 45. The electron beam passed through the mask 44 forms an optical image on a vacuum window 48 having a fluorescent surface inside thereof via the objective lens 45 and a magnifying lens 46 and the optical image is focused onto a TDI camera 50 to be converted into an electrical signal. Then the electrical signal is converted into a mask image at an image forming circuit 54, so that a defect is detected at a defect detecting circuit 55. An LaB
6 cathode of the electron gun 41 operates under conditions of space charge limitations to reduce shot noises and to obtain high brightness, and a magnifying lens system is set at S/N>20, thereby even the defect not more than a half of an image size may be detected. The defect not more than the half of the image size may be detected even if the MIF(E0) is set>0.55.
COPYRIGHT: (C)2004,JPO

5. 发明专利

JP2003331772A Electron beam equipment and device manufacturing method 审中-公开
标题翻译：电子束设备和设备制造方法
公开(公告)号：JP2003331772A
公开(公告)日：2003-11-21
申请号：JP2002141172
申请日：2002-05-16
申请人： Ebara Corp , 株式会社荏原製作所
发明人： NAKASUJI MAMORU , KATO TAKAO , SATAKE TORU , NOMICHI SHINJI
IPC分类号： H01J37/20 , H01J37/05 , H01J37/16 , H01J37/28
摘要： PROBLEM TO BE SOLVED: To heighten a throughput by decreasing aberration of primary electron beams and simplifying a secondary optical system structure in the case of using a multi-beam. SOLUTION: The electron beam equipment includes a primary optical system having a scanning means for scanning a plurality of electron beams 17 on the surface of a sample, an objective lens 31 forming secondary electron beams by focusing secondary electrons emitted from a sample W by the scanning of the primary electron beams, E×B separators 29, 30 separating each secondary electron beam from the primary optical system, a second optical system having a second opening plate 32 for letting each secondary electron beam separated from the first optical system pass through it, and a detector 34 for detecting each secondary electron beam passing through the opening plate. The E×B separators 29, 30 are arrayed in the vicinity of the objective lens 31 and the detector 34 is arrayed in the vicinity of the second opening plate 32. COPYRIGHT: (C)2004,JPO
摘要翻译：解决的问题：在使用多光束的情况下，通过减小一次电子束的像差和简化二次光学系统结构来提高吞吐量。解决方案：电子束设备包括具有用于扫描样品表面上的多个电子束17的扫描装置的主光学系统，通过聚焦从样品W发射的二次电子形成二次电子束的物镜31 通过一次电子束的扫描，从主光学系统分离每个二次电子束的E×B分离器29,30，具有第二开口板32的第二光学系统，用于使从第一光学系统分离的每个二次电子束通过以及用于检测通过开口板的每个二次电子束的检测器34。 E×B分离器29,30排列在物镜31的附近，检测器34排列在第二开口板32的附近。版权所有（C）2004，JPO

6. 发明专利

JP2003234078A ELECTRON BEAM DEVICE 审中-公开
公开(公告)号：JP2003234078A
公开(公告)日：2003-08-22
申请号：JP2002031695
申请日：2002-02-08
申请人： EBARA CORP
发明人： NAKASUJI MAMORU , KATO TAKAO , SATAKE TORU , NOMICHI SHINJI
IPC分类号： H01J37/06 , H01J37/28
摘要： PROBLEM TO BE SOLVED: To provide an electron beam device provided with an electron gun which can emit multiple beams of high precision, and can perform a sample test of high precision. SOLUTION: An annular electron emitter 11B around a light axis 14 as the center axis is formed on an undersurface 11A of a cathode electrode 11, and a plurality of Wehnelt openings 12B which are disposed facing along the ring of the emitter 11B, are formed on an underplate 12A of the Wehnelt electrode 12. Primary electron beams 2 are emitted from partial areas of the emitter 11B which are facing the Wehnelt openings 12B, becoming the multiple beams. A plurality of anode openings 13A through which the multiple primary electron beams 2 can pass, are formed on an anode electrode 13. COPYRIGHT: (C)2003,JPO

7. 发明专利

JP2003208863A ELECTRON-BEAM APPARATUS AND DEVICE MANUFACTURING METHOD THEREWITH 审中-公开
公开(公告)号：JP2003208863A
公开(公告)日：2003-07-25
申请号：JP2002003133
申请日：2002-01-10
申请人： EBARA CORP
发明人： NAKASUJI MAMORU , KATO TAKAO , NOMICHI SHINJI , SATAKE TORU
IPC分类号： G01R31/302 , G03F1/84 , H01J37/09 , H01L21/027 , H01L21/66 , G03F1/08
摘要： PROBLEM TO BE SOLVED: To provide an electron-beam apparatus capable of obtaining an optical system adjustable to meet optimum NA conditions in both cases where the beam current larger than that of cross-over reduction type can be obtained, a beam size can be changed relatively easily, and a potential contrast image can be obtained, and where an ordinary SEM image can be obtained. SOLUTION: This electron-beam apparatus irradiates the electron beams delivered from an electron gun 50 to a forming opening 5, and reduces the size of the electron beams formed at the forming opening 5 to form images on a sample 20. In changing the size of the beam on the sample 20, the size of the forming opening 5 is changed. COPYRIGHT: (C)2003,JPO

8. 发明专利

JP2003132829A ELECTRON BEAM SYSTEM AND DEVICE MANUFACTURING METHOD USING THE SAME 审中-公开
公开(公告)号：JP2003132829A
公开(公告)日：2003-05-09
申请号：JP2001332941
申请日：2001-10-30
申请人： EBARA CORP
发明人： NAKASUJI MAMORU , KATO TAKAO , NOMICHI SHINJI , SATAKE TORU
IPC分类号： G01N23/225 , G01R1/06 , G01R31/02 , G01R31/302 , G21K1/087 , G21K5/04 , H01J37/05 , H01J37/06 , H01J37/12 , H01J37/147 , H01J37/28 , H01L21/66
摘要： PROBLEM TO BE SOLVED: To provide an electron beam system which irradiates the surface of a sample separately converged primary electron beams emitted from a plurality of electron guns, with high throughput and high reliability. SOLUTION: This electron beam system has one or more electrooptical elements 21 per electron gun for irradiating primary electron beams to the surface of a sample by scanning them. The electrooptical elements are formed through the steps of forming holes in an insulative member 210 corresponding to optical axes of the plurality of electron guns, dividing the insulative member into a plurality of sections around the holes by a plurality of slits 213, and forming a metallic coating layer 212 at least on each section of the insulative member divided by the slits. It is possible to apply a voltage on the coating layer of each section individually.

9. 发明专利

JP2003031171A Electron beam device, and manufacturing method of device using the same 审中-公开
标题翻译：电子束装置，以及使用该装置的装置的制造方法
公开(公告)号：JP2003031171A
公开(公告)日：2003-01-31
申请号：JP2001217858
申请日：2001-07-18
申请人： Ebara Corp , Nikon Corp , 株式会社ニコン , 株式会社荏原製作所
发明人： HAMASHIMA MUNEKI , NAKASUJI MAMORU , KATO TAKAO , NOMICHI SHINJI , SATAKE TORU
IPC分类号： G21K1/02 , G21K5/04 , H01J9/14 , H01J37/09 , H01L21/66
摘要： PROBLEM TO BE SOLVED: To provide an electron beam device enabled to obtain multi-beam by using an electron gun having one cathode, and to provide a manufacturing method of a device using the electron beam device. SOLUTION: The electron beam device irradiates an electron beam emitted from a cathode 63 having a plurality of protrusions to a plurality of openings of a plate with openings 3, and reduce-projects the electron beam passed through the openings on a sample. The plurality of openings on the plate with openings 3 are formed by etching a Si single crystal plate 21. The plurality of openings on the plate with openings 3 can be formed by metal coating. A square nock hole, for the positioning of θ-direction, is formed to the plate with openings 3, or the outer form of the plurality of openings on the plate with openings 3 has sides which are parallel with X-axis or Y-axis.
摘要翻译：要解决的问题：提供一种能够通过使用具有一个阴极的电子枪来获得多光束的电子束装置，并提供使用电子束装置的装置的制造方法。解决方案：电子束装置将具有多个突起的阴极63发射的电子束照射到具有开口3的板的多个开口中，并且减少通过样品上的开口的电子束。通过蚀刻Si单晶板21形成具有开口3的板上的多个开口。具有开口3的板上的多个开口可以通过金属涂层形成。在具有开口3的板上形成用于定位θ方向的方形孔，或者具有开口3的具有开口3的板上的多个开口的外部形状具有与X轴或Y轴平行的侧面。

10. 发明专利

JPH11233472A METHOD AND DEVICE FOR PRETREATMENT FOR FILM FORMATION ON BASE MATERIAL 失效
公开(公告)号：JPH11233472A
公开(公告)日：1999-08-27
申请号：JP5132998
申请日：1998-02-17
申请人： EBARA CORP
发明人： KOGURE NAOAKI , KATO TAKAO , HONGO AKIHISA
IPC分类号： C25D7/12 , C23G1/00 , C25F3/12 , C25F3/30 , H01L21/28 , H01L21/304 , H01L21/306
摘要： PROBLEM TO BE SOLVED: To provide a method and device for pretreatment for film formation on a base material where a surface film with strong adhesion is formed without exposing the base material surface and a film in the air, after cleaning the base material surface and removing or reducing the film. SOLUTION: In this pretreatment method, a base metal 5 contacts a film forming solution 7 that causes film forming so that a film of a required material is deposited on the surface. Prior to the film forming process to deposit a film on the base material 5, the base material 5 contacts a cleaning/film removing/ film reducing solution 6 that causes a film removing and reducing. The cleaning/ film removing/film reducing solution 6 is held on the surface of the base material 5 in a certain condition. Then, the system that has the cleaning/film removing/film reducing solution 6, and the system that has the film forming solution 7, contact each other in order to replace the cleaning/film removing/film reducing solution 6 covering the surface of the base material 5 by the film forming solution 7 continuously or discontinuously.

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