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1. 发明专利

JP2001358097A MACHINING DEVICE OF SEMICONDUCTOR WAFER 失效
公开(公告)号：JP2001358097A
公开(公告)日：2001-12-26
申请号：JP2000175312
申请日：2000-06-12
申请人： DISCO ABRASIVE SYSTEMS LTD , MATSUSHITA ELECTRIC IND CO LTD
发明人： KOMA YUTAKA , IWAI TETSUHIRO , HAJI HIROSHI , ARITA KIYOSHI
IPC分类号： B24B37/04 , H01L21/304 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide a machining device of a semiconductor wafer for improving a machining yield by preventing the semiconductor wafer from being broken and at the same time for miniaturizing facilities. SOLUTION: In this machining device of a semiconductor wafer 11 where the surface of a semiconductor wafer 11 is polished by machine polishing and then the damaged layer of the polished surface is removed, a polishing part 6, a pre-center part 5, a wafer-washing part 10, plasma treatment parts 4A and 4B, and magazines 2A and 2B are arranged radially with a zero point O in the polar coordinate system of a wafer transport part 3 having a robot mechanism as a center, a polishing part 6, a pre-center part 5, a wafer-washing part 10, plasma treatment parts 4A and 4B, and magazines 2A and 2B are arranged radially, and the arrangement position is set so that the zero point O is located on the extended line of wafer carry out/in center lines La and Lb of the plasma treatment parts 4A and 4B, thus reducing the number of shift of the semiconductor wafer 11 for preventing the semiconductor wafer 11 from being broken, and at the same time covering the delivery of the semiconductor wafer between the parts of a single robot mechanism and miniaturizing the facilities.

2. 发明专利

JP2001257247A MACHINING DEVICE OF SEMICONDUCTOR WAFER 失效
公开(公告)号：JP2001257247A
公开(公告)日：2001-09-21
申请号：JP2000068229
申请日：2000-03-13
申请人： DISCO ABRASIVE SYSTEMS LTD , MATSUSHITA ELECTRIC IND CO LTD
发明人： KOMA YUTAKA , ARITA KIYOSHI , HAJI HIROSHI , IWAI TETSUHIRO
IPC分类号： B65G49/07 , H01L21/302 , H01L21/304 , H01L21/306 , H01L21/3065 , H01L21/677 , H01L21/68
摘要： PROBLEM TO BE SOLVED: To prevent the damage of a semiconductor wafer for improving a machining yield, and at the same time to provide the machining device of the semiconductor wafer that can miniaturize facilities. SOLUTION: This machining device of the semiconductor wafer uses mechanical polishing together with dry etching, and thins the semiconductor wafer to target thickness for machining. Also, the machining device is equipped with a polishing part 6 for mechanically polishing the semiconductor wafer, a wafer- washing part 10 for washing the semiconductor wafer after polishing, and plasma treatment parts 4A and 4B for allowing the semiconductor wafer to be subjected to dry etching after washing. In this machining device, wafer- carrying-in and -out parts 9A and 9B are provided in the same device, where the wafer-carrying-in and -out parts compose a wafer-handling means along with a wafer carrier 3 that has the robot mechanism of a polar coordinates system for handling the semiconductor wafer among the parts, thus reducing the number of times for passing the semiconductor wafer for preventing the damage of the semiconductor wafer and at the same time for miniaturizing facilities.

3. 发明专利

JP2001257186A METHOD OF PROCESSING SEMICONDUCTOR WAFER 失效
公开(公告)号：JP2001257186A
公开(公告)日：2001-09-21
申请号：JP2000068230
申请日：2000-03-13
申请人： DISCO ABRASIVE SYSTEMS LTD , MATSUSHITA ELECTRIC IND CO LTD
发明人： KOMA YUTAKA , ARITA KIYOSHI , HAJI HIROSHI , IWAI TETSUHIRO
IPC分类号： H01L21/302 , H01L21/304 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide a method of processing a semiconductor wafer in which an environmental pollutant is not generated and an environmental load is small. SOLUTION: A semiconductor wafer in which a protective film is formed on a circuit forming face is picked up from a wafer storing section 2 by a wafer transfer section 3. After being positioned by a pre-center section 5, the wafer is mechanically ground in a grinding section 6 so as to have the thickness of the target thickness of thin processing plus a dry etching margin. After being ground, the semiconductor wafer is washed with a washing solution to remove a contamination in a wafer washing section 10, and then is sent to plasma treating sections 4A and 4B to be dry-etched by a plasma etching. In this way, the generation of the environmental pollutant can be prevented when wet etching is performed by using the etching solution and the method of processing a semiconductor wafer with a small environmental load can be realized.

4. 发明专利

JP2001257248A DEVICE AND METHOD FOR MACHINING SEMICONDUCTOR WAFER 失效
公开(公告)号：JP2001257248A
公开(公告)日：2001-09-21
申请号：JP2000068231
申请日：2000-03-13
申请人： DISCO ABRASIVE SYSTEMS LTD , MATSUSHITA ELECTRIC IND CO LTD
发明人： KOMA YUTAKA , ARITA KIYOSHI , HAJI HIROSHI , IWAI TETSUHIRO
IPC分类号： B65G49/07 , H01L21/302 , H01L21/304 , H01L21/3065 , H01L21/677 , H01L21/68
摘要： PROBLEM TO BE SOLVED: To provide a device and method for machining a semiconductor water that increases the transverse rupture strength of a semiconductor wafer for preventing damage, and improves a machining yield. SOLUTION: In machining where the semiconductor wafer is thinned to target thickness, a polishing part 6, a wafer-washing part 10, and plasma treatment parts 4A and 4B are provided. The polishing part 6 polishes a side opposite to the circuit formation surface of the semiconductor wafer. The wafer- washing part 10 washes the semiconductor wafer after polishing. The plasma treatment parts 4A and 4B allow the semiconductor wafer after washing to be subjected to dry etching by plasma treatment. Also, a wafer-carrying-out part 9B and a wafer conveyance part 3 are provided. The wafer-carrying-out part 9B transfers the semiconductor wafer after polishing to the wafer-washing part 10, and the wafer conveyance part 3 transfers the semiconductor wafer after washing to the plasma treatment parts 4A and 4B, thus separately performing conveyance before/after washing, hence preventing foreign objects from adhering to the semiconductor wafer after washing for positively carrying out dry etching, and hence improving the transverse rupture strength of the semiconductor wafer.

5. 发明专利

JP2007080555A Plasma treatment device 有权
标题翻译：等离子体处理装置
公开(公告)号：JP2007080555A
公开(公告)日：2007-03-29
申请号：JP2005263409
申请日：2005-09-12
申请人： Matsushita Electric Ind Co Ltd , 松下電器産業株式会社
发明人： IWAI TETSUHIRO
IPC分类号： H05H1/46 , B01J19/08 , H01L21/301
CPC分类号： H01J37/32082 , H01J37/32541 , H01J37/32568 , H01J37/32623
摘要： PROBLEM TO BE SOLVED: To provide a plasma treatment device capable of efficiently carrying out stable plasma treatment. SOLUTION: The plasma treatment device carrying out plasma treatment with a semiconductor wafer 5 as an object has arranged a lower electrode 3 with an electrode member 46 mounted at a bottom part 40c of a chamber vessel 40 to be a main body of a vacuum chamber 2, and an upper electrode 4 in free up-and-down movement equipped with a protruded face protruded downward to an underside toward inside of an outer edge part 51a is provided at an upper part of the lower electrode 3. The upper electrode 4 is made descended toward the lower electrode 3, the outer edge part 51a is made in contact with a circular sealing face 40d provided at an intermediate height HL of a side wall part 40a of the chamber vessel 40, and a treatment space 2a sealed between the lower electrode 3 and the upper electrode 4 is formed. With this, an upper part of the upper electrode 4 becomes a normal-pressure space 2b, which prevents generation of abnormal discharge to enable to efficiently perform stable plasma treatment. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供能够有效地进行稳定等离子体处理的等离子体处理装置。解决方案：以半导体晶片5为对象进行等离子体处理的等离子体处理装置布置有下电极3，电极构件46安装在室容器40的底部40c处，作为主体在下部电极3的上部设置真空室2和具有从外侧边缘部51a的内侧向下突出到下侧的突出面的自由上下运动的上部电极4.上部电极 4朝向下电极3下降，外边缘部分51a与设置在室容器40的侧壁部分40a的中间高度HL处的圆形密封面40d接触，并且处理空间2a密封在形成下电极3和上电极4。由此，上部电极4的上部成为常压空间2b，能够防止发生异常放电，能够有效地进行稳定的等离子体处理。版权所有（C）2007，JPO＆INPIT

6. 发明专利

JP2003318161A Device and method for plasma treatment 有权
标题翻译：用于等离子体处理的装置和方法
公开(公告)号：JP2003318161A
公开(公告)日：2003-11-07
申请号：JP2003157934
申请日：2003-06-03
申请人： Matsushita Electric Ind Co Ltd , 松下電器産業株式会社
发明人： ARITA KIYOSHI , IWAI TETSUHIRO , TERAYAMA JUNICHI
IPC分类号： H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide a device and method for plasma treatment by which the occurrence of failures can be prevented by holding a semiconductor substrate with sufficient electrostatic holding power. SOLUTION: In the plasma treatment device which performs plasma treatment on a silicon wafer 6 while a protective tape 6a is stuck to the circuit forming surface of the wafer 6, the wafer 6 is placed on a placing surface 3d on the upper surface of a lower electrode 3 made of a conductive metal, with the protective tape 6a on the placing surface 3d side. When the wafer 6 is held by the lower electrode 3 by electrostatic attraction by impressing a DC voltage upon the electrode 3 from a DC power source section 18 for electrostatic attraction at the time of performing the plasma treatment, the protective tape 6a is utilized as a dielectric for electrostatic attraction. Consequently, the silicon wafer 6 can be held with sufficient electrostatic holding power, because the thickness of the can be reduced to the utmost. COPYRIGHT: (C)2004,JPO
摘要翻译：解决的问题：提供一种用于等离子体处理的装置和方法，通过该装置和方法可以通过保持具有足够的静电保持力的半导体衬底来防止故障的发生。解决方案：在将保护带6a粘贴到晶片6的电路形成表面的同时对硅晶片6进行等离子体处理的等离子体处理装置中，将晶片6放置在上表面上的放置表面3d上由导电金属制成的下电极3，其中保护带6a位于放置表面3d侧。当通过在进行等离子体处理时从用于静电吸引的直流电源部分18施加直流电压至电极3上的晶片6被下部电极3保持时，保护带6a被用作电介质用于静电吸引。因此，可以将硅晶片6保持在足够的静电保持力，因为可以最大限度地减小厚度。版权所有（C）2004，JPO

7. 发明专利

JP2003311145A Plasma treatment apparatus 审中-公开
标题翻译：等离子体处理装置
公开(公告)号：JP2003311145A
公开(公告)日：2003-11-05
申请号：JP2002120420
申请日：2002-04-23
申请人： Matsushita Electric Ind Co Ltd , 松下電器産業株式会社
发明人： FURUKAWA RYOTA , KORENAGA TETSUO , NAGATOME RYUJI , IWAI TETSUHIRO , YOSHIDA NAOHITO
IPC分类号： B08B7/00 , B01J19/00 , B01J19/08
摘要： PROBLEM TO BE SOLVED: To provide a plasma treatment apparatus of which the cover case can easily be cleaned.
SOLUTION: The plasma treatment apparatus comprises a lower part electrode 3, a cover case 10 covering over the lower part electrode 3 in a freely openable and closable manner, a gas supply part 12 for supplying a gas for plasma generation to a treatment chamber 11 in the cover case 10, and a vacuum pump 15 for vacuum-evacuating the treatment chamber 11 and which carries out plasma treatment of surface of a work 4 in the treatment chamber 11. The inner surface of the cover case 10 is made specular by sticking a glass plate 7 or the like. Accordingly, the cover case 10 can easily be cleaned by opening the cover case 10, wiping the inner surface of the cover case 10 and removing particles adhering to the inner surface of the cover case 10.
COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：提供能够容易地清洁盖壳的等离子体处理装置。解决方案：等离子体处理装置包括下部电极3，以可自由打开和关闭的方式覆盖在下部电极3上的盖壳体10，用于将等离子体产生气体供应到处理的气体供应部分12 盖体10内的室11，以及用于对处理室11进行真空抽真空的真空泵15，对处理室11内的工件4的表面进行等离子体处理。盖壳10的内表面形成镜面通过粘贴玻璃板7等。因此，通过打开盖壳10，擦拭盖壳10的内表面并去除附着在盖壳10的内表面上的颗粒，能够容易地清洁盖壳10.权利要求（C）2004， JPO

8. 发明专利

JP2002158215A PLASMA PROCESSOR 失效
公开(公告)号：JP2002158215A
公开(公告)日：2002-05-31
申请号：JP2000355414
申请日：2000-11-22
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： FURUKAWA RYOTA , IWAI TETSUHIRO , NAGATOME RYUJI
IPC分类号： H05H1/46 , C23F4/00 , H01L21/302 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide a plasma processor capable of maintaining a stable plasma discharge. SOLUTION: The plasma processor for plasma-processing a substrate 7 housed in a process chamber 8 of a vacuum chamber 1 comprises an insulator 10 of a specified width on the top face of a lower electrode 5 insulatively mounted in a base 2 of the chamber 1 forming a gap 9 with the chamber 1 along an entrance of the gap 9. This increases the impedance of the insulator mounting part to suppress the plasma discharge in the gap 9, and stabilize the plasma discharge in the chamber 8 in a plasma process with the plasma discharge generated in the process chamber 8.

9. 发明专利

JP2001210623A PLASMA TREATMENT APPARATUS 失效
公开(公告)号：JP2001210623A
公开(公告)日：2001-08-03
申请号：JP2000016764
申请日：2000-01-26
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： ARITA KIYOSHI , HAJI HIROSHI , IWAI TETSUHIRO
IPC分类号： H01L21/302 , B01J19/08 , C23F4/00 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide a plasma treatment apparatus which can effectively cool down a work or a block of a lower electrode, on which a work is loaded during plasma treatment. SOLUTION: An upper electrode 2 and the lower electrode 3 are provided in a vacuum chamber 1. The lower electrode 3 has a block 21, composed of metals with a small specific heat. The block 21 has suction hole 26, which vacuum chucks and loads the work 15, and a refrigerant path 28 is formed under the block 21. The block 21 and the work 15 on the block 21 are cooled down by making the refrigerant flow through the refrigerant path 28.

10. 发明专利

JP2001196359A PLASMA TREATMENT DEVICE 失效
公开(公告)号：JP2001196359A
公开(公告)日：2001-07-19
申请号：JP2000007419
申请日：2000-01-17
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： ARITA KIYOSHI , HAJI HIROSHI , IWAI TETSUHIRO
IPC分类号： H01L21/302 , C23F4/00 , H01L21/3065 , H05H1/46
摘要： PROBLEM TO BE SOLVED: To provide a plasma treatment device in which arc discharge is prevented from generating between electrodes. SOLUTION: A first electrode 2 and a second electrode 3 are provided in a vacuum chamber 1. the first electrode 2 comprises an insulating body 7 wherein a through hole 8 for gas blowing-off is formed at a lower part of a base 6 of conductor. By covering the lower surface of the base 6 facing the second electrode 3 with an insulating part 13, arc discharge D is prevented from generating between the base 6 and the second electrode 3, and stable plasma treatment is performed.

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