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1. 发明专利

JP2007080555A Plasma treatment device 有权
标题翻译：等离子体处理装置
公开(公告)号：JP2007080555A
公开(公告)日：2007-03-29
申请号：JP2005263409
申请日：2005-09-12
申请人： Matsushita Electric Ind Co Ltd , 松下電器産業株式会社
发明人： IWAI TETSUHIRO
IPC分类号： H05H1/46 , B01J19/08 , H01L21/301
CPC分类号： H01J37/32082 , H01J37/32541 , H01J37/32568 , H01J37/32623
摘要： PROBLEM TO BE SOLVED: To provide a plasma treatment device capable of efficiently carrying out stable plasma treatment. SOLUTION: The plasma treatment device carrying out plasma treatment with a semiconductor wafer 5 as an object has arranged a lower electrode 3 with an electrode member 46 mounted at a bottom part 40c of a chamber vessel 40 to be a main body of a vacuum chamber 2, and an upper electrode 4 in free up-and-down movement equipped with a protruded face protruded downward to an underside toward inside of an outer edge part 51a is provided at an upper part of the lower electrode 3. The upper electrode 4 is made descended toward the lower electrode 3, the outer edge part 51a is made in contact with a circular sealing face 40d provided at an intermediate height HL of a side wall part 40a of the chamber vessel 40, and a treatment space 2a sealed between the lower electrode 3 and the upper electrode 4 is formed. With this, an upper part of the upper electrode 4 becomes a normal-pressure space 2b, which prevents generation of abnormal discharge to enable to efficiently perform stable plasma treatment. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供能够有效地进行稳定等离子体处理的等离子体处理装置。解决方案：以半导体晶片5为对象进行等离子体处理的等离子体处理装置布置有下电极3，电极构件46安装在室容器40的底部40c处，作为主体在下部电极3的上部设置真空室2和具有从外侧边缘部51a的内侧向下突出到下侧的突出面的自由上下运动的上部电极4.上部电极 4朝向下电极3下降，外边缘部分51a与设置在室容器40的侧壁部分40a的中间高度HL处的圆形密封面40d接触，并且处理空间2a密封在形成下电极3和上电极4。由此，上部电极4的上部成为常压空间2b，能够防止发生异常放电，能够有效地进行稳定的等离子体处理。版权所有（C）2007，JPO＆INPIT

2. 发明专利

JP2003318161A Device and method for plasma treatment 有权
标题翻译：用于等离子体处理的装置和方法
公开(公告)号：JP2003318161A
公开(公告)日：2003-11-07
申请号：JP2003157934
申请日：2003-06-03
申请人： Matsushita Electric Ind Co Ltd , 松下電器産業株式会社
发明人： ARITA KIYOSHI , IWAI TETSUHIRO , TERAYAMA JUNICHI
IPC分类号： H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide a device and method for plasma treatment by which the occurrence of failures can be prevented by holding a semiconductor substrate with sufficient electrostatic holding power. SOLUTION: In the plasma treatment device which performs plasma treatment on a silicon wafer 6 while a protective tape 6a is stuck to the circuit forming surface of the wafer 6, the wafer 6 is placed on a placing surface 3d on the upper surface of a lower electrode 3 made of a conductive metal, with the protective tape 6a on the placing surface 3d side. When the wafer 6 is held by the lower electrode 3 by electrostatic attraction by impressing a DC voltage upon the electrode 3 from a DC power source section 18 for electrostatic attraction at the time of performing the plasma treatment, the protective tape 6a is utilized as a dielectric for electrostatic attraction. Consequently, the silicon wafer 6 can be held with sufficient electrostatic holding power, because the thickness of the can be reduced to the utmost. COPYRIGHT: (C)2004,JPO
摘要翻译：解决的问题：提供一种用于等离子体处理的装置和方法，通过该装置和方法可以通过保持具有足够的静电保持力的半导体衬底来防止故障的发生。解决方案：在将保护带6a粘贴到晶片6的电路形成表面的同时对硅晶片6进行等离子体处理的等离子体处理装置中，将晶片6放置在上表面上的放置表面3d上由导电金属制成的下电极3，其中保护带6a位于放置表面3d侧。当通过在进行等离子体处理时从用于静电吸引的直流电源部分18施加直流电压至电极3上的晶片6被下部电极3保持时，保护带6a被用作电介质用于静电吸引。因此，可以将硅晶片6保持在足够的静电保持力，因为可以最大限度地减小厚度。版权所有（C）2004，JPO

3. 发明专利

JP2003311145A Plasma treatment apparatus 审中-公开
标题翻译：等离子体处理装置
公开(公告)号：JP2003311145A
公开(公告)日：2003-11-05
申请号：JP2002120420
申请日：2002-04-23
申请人： Matsushita Electric Ind Co Ltd , 松下電器産業株式会社
发明人： FURUKAWA RYOTA , KORENAGA TETSUO , NAGATOME RYUJI , IWAI TETSUHIRO , YOSHIDA NAOHITO
IPC分类号： B08B7/00 , B01J19/00 , B01J19/08
摘要： PROBLEM TO BE SOLVED: To provide a plasma treatment apparatus of which the cover case can easily be cleaned.
SOLUTION: The plasma treatment apparatus comprises a lower part electrode 3, a cover case 10 covering over the lower part electrode 3 in a freely openable and closable manner, a gas supply part 12 for supplying a gas for plasma generation to a treatment chamber 11 in the cover case 10, and a vacuum pump 15 for vacuum-evacuating the treatment chamber 11 and which carries out plasma treatment of surface of a work 4 in the treatment chamber 11. The inner surface of the cover case 10 is made specular by sticking a glass plate 7 or the like. Accordingly, the cover case 10 can easily be cleaned by opening the cover case 10, wiping the inner surface of the cover case 10 and removing particles adhering to the inner surface of the cover case 10.
COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：提供能够容易地清洁盖壳的等离子体处理装置。解决方案：等离子体处理装置包括下部电极3，以可自由打开和关闭的方式覆盖在下部电极3上的盖壳体10，用于将等离子体产生气体供应到处理的气体供应部分12 盖体10内的室11，以及用于对处理室11进行真空抽真空的真空泵15，对处理室11内的工件4的表面进行等离子体处理。盖壳10的内表面形成镜面通过粘贴玻璃板7等。因此，通过打开盖壳10，擦拭盖壳10的内表面并去除附着在盖壳10的内表面上的颗粒，能够容易地清洁盖壳10.权利要求（C）2004， JPO

4. 发明专利

JP2007080912A Plasma processing apparatus, electrode member for plasma processing apparatus, process for producing electrode member and method for recycling it 有权
标题翻译：等离子体处理装置，等离子体处理装置的电极部件，用于制造电极部件的方法和回收方法
公开(公告)号：JP2007080912A
公开(公告)日：2007-03-29
申请号：JP2005263410
申请日：2005-09-12
申请人： Matsushita Electric Ind Co Ltd , 松下電器産業株式会社
发明人： IWAI TETSUHIRO
IPC分类号： H01L21/3065 , H05H1/46
CPC分类号： H01J37/32009 , H01J37/32559 , H01J2237/334
摘要： PROBLEM TO BE SOLVED: To provide a plasma processing apparatus in which component consumption cost is reduced by prolonging the lifetime of an electrode member composing a lower electrode and contamination on the inside of the apparatus due to adhesion of scattering matters can be prevented, and to provide an electrode member for the plasma processing apparatus, a process for producing the electrode member and a method for recycling it. SOLUTION: An electrode member 46 abutting against the lower surface of a work in a plasma processing apparatus performing plasma processing of a planar work is constituted by soldering a planar adsorption member 45 having a plurality of through holes 45a and a cooling plate 44. A thermal spray film 65 is formed on the upper surface of the adsorption member 45 by thermally spraying alumina, and the edge of a hole 45d opening the through hole 45a is covered with the thermal spray film 65. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：解决的问题：提供一种等离子体处理装置，其中可以防止由于散射物质的附着而延长构成下部电极的电极构件的寿命和设备内部的污染而使部件消耗成本降低并且提供用于等离子体处理装置的电极部件，电极部件的制造方法及其回收方法。解决方案：通过对具有多个通孔45a和冷却板44的平面吸附构件45进行焊接而构成在进行平面加工的等离子体处理的等离子体处理装置中与工件的下表面抵接的电极构件46 通过热氧化铝在吸附部件45的上表面形成热喷涂膜65，并且用热喷涂膜65覆盖打开通孔45a的孔45d的边缘。（C ）2007，JPO＆INPIT

5. 发明专利

JP2006253364A Plasma treatment apparatus and its operational state output method 有权
标题翻译：等离子体处理装置及其运行状态输出方法
公开(公告)号：JP2006253364A
公开(公告)日：2006-09-21
申请号：JP2005067004
申请日：2005-03-10
申请人： Matsushita Electric Ind Co Ltd , 松下電器産業株式会社
发明人： IWAI TETSUHIRO , URATA KAZUHIRO
IPC分类号： H01L21/3065 , H05H1/46
摘要： PROBLEM TO BE SOLVED: To provide a plasma treatment apparatus in which the cause of a trouble can be investigated timely by utilizing sampling data of an operational state when the treatment apparatus is in operation effectively, and to provide its operational state output method. SOLUTION: In the plasma treatment apparatus performing plasma treatment under predetermined operational conditions, sampling data of information indicative of the operational state is represented by a graph at a monitor signal output section 28 and displayed on a monitor 17, and an image file in a form of data file of a display screen can be outputted to a removable storage device 19 or a printer 20 by an image file output means 33. The image file can be referred, as required, upon the occurrence of a trouble and the cause of the trouble can be investigated timely. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种等离子体处理装置，其中通过利用处理装置有效运行时的操作状态的采样数据及时地进行问题的原因，并提供其操作状态输出方法。解决方案：在预定操作条件下进行等离子体处理的等离子体处理装置中，表示操作状态的信息的采样数据由监视信号输出部分28上的曲线表示并显示在监视器17上，并且图像文件可以通过图像文件输出装置33将显示屏幕的数据文件的形式输出到可移动存储装置19或打印机20.可以根据需要在出现故障和原因的情况下参考图像文件的麻烦可以及时调查。版权所有（C）2006，JPO＆NCIPI

6. 发明专利

JP2004148282A Plasma treatment apparatus 有权
标题翻译：等离子体处理装置
公开(公告)号：JP2004148282A
公开(公告)日：2004-05-27
申请号：JP2002319716
申请日：2002-11-01
申请人： Matsushita Electric Ind Co Ltd , 松下電器産業株式会社
发明人： YOSHIDA NAOHITO , HAJI HIROSHI , FURUKAWA RYOTA , IWAI TETSUHIRO , KORENAGA TETSUO
IPC分类号： H05H1/46 , B01J3/00 , B01J19/08 , C23F4/00
摘要： PROBLEM TO BE SOLVED: To provide a plasma treatment apparatus which reduces the amount of organic particles adhered to and accumulated in the inside of a treatment chamber and can keep a tact time without delaying a vacuum exhaust time. SOLUTION: In the plasma treatment apparatus for allowing the plasma generated in the treatment chamber to act on a work, the insulating member 12 interposed between the electrode 3 connected to a high frequency power supply and a base member 2 is constituted of a material prepared by mixing a substance enhancing heat conductivity such as an inorganic material or the like with a resin and the heat of the electrode 3 heated to a high temperature by the plasma is transmitted to the base member 2 through the insulating member 12 to raise the temperature of the base member 2 in a plasma treatment process. By this constitution, the amount of the organic particles adhered to and accumulated in the inside of the treatment chamber can be reduced to keep the tact time without delaying the vacuum exhaust time. COPYRIGHT: (C)2004,JPO
摘要翻译：解决的问题：提供一种等离子体处理装置，其减少了附着在和积聚在处理室内部的有机颗粒的量，并且可以保持节拍时间而不延迟真空排气时间。解决方案：在用于使处理室中产生的等离子体作用于工件的等离子体处理装置中，插入在与高频电源连接的电极3和基座部件2之间的绝缘部件12由通过将提高导热性的物质如无机材料等与树脂混合并通过等离子体加热到高温的电极3的热量而制备的材料通过绝缘构件12传递到基底构件2，在等离子体处理工艺中基体2的温度。通过这种结构，可以减少粘附到和积聚在处理室内部的有机颗粒的量，以保持节拍时间而不延迟真空排气时间。版权所有（C）2004，JPO

7. 发明专利

JP2004148281A Plasma treatment apparatus 审中-公开
公开(公告)号：JP2004148281A
公开(公告)日：2004-05-27
申请号：JP2002319707
申请日：2002-11-01
申请人： Matsushita Electric Ind Co Ltd , 松下電器産業株式会社
发明人： YOSHIDA NAOHITO , HAJI HIROSHI , FURUKAWA RYOTA , IWAI TETSUHIRO , KORENAGA TETSUO
IPC分类号： H05H1/46 , B01J3/00 , B01J19/08 , C23F4/00
摘要： PROBLEM TO BE SOLVED: To provide a plasma treatment apparatus for reducing the amount of organic particles adhered to and accumulated in the inside of a pressure reducing exhaust pipe to make reducible the load of apparatus maintenance work. SOLUTION: In the plasma treatment apparatus for allowing plasma generated in a treatment chamber 4a to act on a work, the exhaust pipe 26 for evacuating the treatment chamber 4a with a vacuum pump 29 is divided into a first exhaust pipe 26a, a second exhaust pipe 26c and a short pipe part 26b freely exchangeable with respect to the fixing piping of those exhaust pipes and a range to be heated excepting the short pipe part 26b is heated by a heater. By this constitution, the amount of particles adhered and accumulated of organic matter to the insides of the exhaust pipes is reduced, the adhesion of the particles of the organic matter to the short pipe part 26b is concentrated and only the short pipe part 26b is replaced at the time of maintenance work to reduce the load of the maintenance work. COPYRIGHT: (C)2004,JPO

8. 发明专利

JP2003318160A Device and method for plasma treatment 有权
标题翻译：用于等离子体处理的装置和方法
公开(公告)号：JP2003318160A
公开(公告)日：2003-11-07
申请号：JP2003157933
申请日：2003-06-03
申请人： Matsushita Electric Ind Co Ltd , 松下電器産業株式会社
发明人： ARITA KIYOSHI , IWAI TETSUHIRO , TERAYAMA JUNICHI
IPC分类号： H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide a device and method for plasma treatment by which the occurrence of failures can be prevented by making a plate-shaped substrate to be held appropriately on a substrate placing section. SOLUTION: In the method for plasma treatment, a silicon wafer is plasma- treated by placing the wafer on a placing surface on an insulating layer 5 formed on a lower electrode 3 in a processing chamber 2. Before plasma is generated between the lower electrode 3 and an upper electrode 4, the silicon wafer is held by the insulating layer 5 by vacuum suction by driving a vacuum suction pump 12 and, after the plasma is generated, the wafer is held by the lower electrode 3 by electrostatic attraction by impressing a DC voltage upon the electrode 3 from a DC power source section 18 for electrostatic attraction. Consequently, the silicon wafer can be held appropriately by the lower electrode 3 and the occurrence of abnormal discharge or defective cooling caused by defective adhesion can be prevented. COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：提供一种用于等离子体处理的装置和方法，通过该装置和方法可以通过使板状基板适当地保持在基板放置部上来防止故障的发生。解决方案：在等离子体处理方法中，通过将晶片放置在形成在处理室2中的下电极3上的绝缘层5上的放置表面上来对硅晶片进行等离子体处理。在等离子体在下电极3和上电极4，通过驱动真空抽吸泵12通过真空吸附由绝缘层5保持硅晶片，并且在产生等离子体之后，晶片被下电极3通过静电吸引保持从用于静电吸引的直流电源部18向电极3施加直流电压。因此，可以通过下部电极3适当地保持硅晶片，并且可以防止由于粘附性不良引起的异常放电或不良冷却的发生。版权所有（C）2004，JPO

9. 发明专利

JP2003007683A Plasma treatment apparatus 审中-公开
标题翻译：等离子体处理装置
公开(公告)号：JP2003007683A
公开(公告)日：2003-01-10
申请号：JP2001190973
申请日：2001-06-25
申请人： Matsushita Electric Ind Co Ltd , 松下電器産業株式会社
发明人： ARITA KIYOSHI , IWAI TETSUHIRO , HAJI HIROSHI , SAKAMI SEIJI
IPC分类号： H05H1/46 , B01J19/08 , H01L21/302 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide a plasma treatment apparatus that can prevent abnormal discharge for uniform etching in the plasma treatment of a silicon-based substrate.
SOLUTION: As the material of an electrode member 17 for a plasma treatment apparatus, fitted onto the front of a gas supply port of an electrode for plasma generation in the plasma treatment apparatus, a ceramic porous body having three-dimensional mesh structure where a skeleton section 18a of ceramic containing alumina is allowed to continue in a three-dimensional mesh shape is used, and gas for plasma generation is made to pass through via a void section 18b being formed in the three-dimensional mesh structure irregularly, thus making uniform the distribution of the gas to be supplied for preventing abnormal discharge, and achieving uniform etching without variation.
COPYRIGHT: (C)2003,JPO
摘要翻译：要解决的问题：提供一种能够防止在硅基基板的等离子体处理中的均匀蚀刻的异常放电的等离子体处理装置。解决方案：作为用于等离子体处理装置的电极构件17的材料，其装配在等离子体处理装置中用于等离子体产生的电极的气体供给口的前面，具有三维网状结构的陶瓷多孔体，其中骨架使用包含氧化铝的陶瓷部分18a继续以三维网格形状，并且使等离子体产生的气体经由形成在三维网格结构中的空隙部分18b不规则地通过，从而使分配用于防止异常放电的气体，并且实现均匀的蚀刻而不变化。

10. 发明专利

JP2007116020A Plasma treating device and plasma treating method 有权
标题翻译：等离子体处理装置和等离子体处理方法
公开(公告)号：JP2007116020A
公开(公告)日：2007-05-10
申请号：JP2005308184
申请日：2005-10-24
申请人： Matsushita Electric Ind Co Ltd , 松下電器産業株式会社
发明人： NAKAGAWA AKIRA , ARITA KIYOSHI , IWAI TETSUHIRO
IPC分类号： H01L21/3065 , H01L21/02 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To stably and easily separate a plate-like substrate from a substrate placement. SOLUTION: A plasma treating method performs a plasma treatment in a state where the plate-like substrate is held on the placement surface of the substrate placement inside a vacuum chamber. The substrate is held by suction in a lower electrode with suction pressure Pb1 so as to perform the plasma treatment under the condition of treating pressure Pa2. Then, the pressure of a treating space is raised to Pa4 by first in-chamber venting (T7-T8) and, in this state, air blowing is performed from the suction hole of the lower electrode (T10-T11). Thus, the substrate is separated from the lower electrode. Then by the second in-chamber ventilation (T12...), the pressure of the vacuum chamber is raised to the atmospheric pressure. Consequently, the plate-like substrate is stably and easily separated from the substrate placement. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：为了稳定且容易地将板状基板与基板放置分离。解决方案：等离子体处理方法在将板状基板保持在放置在真空室内的基板的配置面的状态下进行等离子体处理。基板通过抽吸保持在具有吸入压力Pb1的下部电极中，以在处理压力Pa2的条件下进行等离子体处理。然后，通过第一室内排气（T7-T8）将处理空间的压力升高至Pa4，在该状态下，从下部电极（T10-T11）的吸入孔进行吹风。因此，基板与下电极分离。然后通过第二室内通风（T12 ...），将真空室的压力升高至大气压。因此，板状基板稳定且容易地从基板放置分离。版权所有（C）2007，JPO＆INPIT

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