会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 9. 发明专利
    • Epitaxial film, piezoelectric element, ferroelectric element, manufacturing methods of them, and liquid discharge head
    • 外延膜,压电元件,电磁元件,其制造方法和液体放电头
    • JP2008277783A
    • 2008-11-13
    • JP2008077627
    • 2008-03-25
    • Canon IncTokyo Institute Of Technologyキヤノン株式会社国立大学法人東京工業大学
    • HAYASHI JUNPEIMATSUDA KATAYOSHIFUKUI TETSUROFUNAKUBO HIROSHI
    • H01L21/316B41J2/045B41J2/055B41J2/135B41J2/14B41J2/16H01L41/09H01L41/18H01L41/187H01L41/22H01L41/316
    • H01L41/0973H01L41/0815H01L41/319
    • PROBLEM TO BE SOLVED: To provide an epitaxial film having a uniform composition, superior crystal orientation and a large area, and its manufacturing method, to provide a piezoelectric element and a ferroelectric element having a single orientational crystal structure, superior characteristics and large areas by using the epitaxial film having superior lattice matching as a buffer layer to a Si substrate, and their manufacturing methods, and a large liquid discharge head having superior liquid discharging performance.
      SOLUTION: The Si substrate having an SiO
      2 layer with a film thickness of 1.0 nm or larger to 10 nm or smaller on a surface is heated by the use of a metal target represented by the following composition formula (1): yA(1-y)B (in which A is element including rare earth elements including Y and Sc, B is Zr, and y is a numeric value of 0.03 or larger to 0.20 or smaller). On the substrate, the epitaxial film represented by the following composition formula (2): xA
      2 O
      3 -(1-x)BO
      2 (in which A and B are the same metal elements as A and B of the formula (1), and x is a numeric value of 0.010 or larger to 0.035 or smaller) is formed.
      COPYRIGHT: (C)2009,JPO&INPIT
    • 要解决的问题:为了提供具有均匀组成,优异的晶体取向和大面积的外延膜及其制造方法,提供具有单一取向晶体结构的压电元件和铁电元件,具有优异的特性和 通过使用具有优良晶格匹配的外延膜作为Si衬底的缓冲层的大面积及其制造方法以及具有优异的液体排放性能的大型液体排出头。 解决方案:通过使用由以下的金属靶加热具有表面上的膜厚度为1.0nm以上至10nm以下的SiO 2 SB层的Si衬底 组成式(1):yA(1-y)B(其中A是包括Y和Sc的稀土元素的元素,B是Zr,y是0.03以上且0.20以下的数值)。 在基板上,由以下组成式(2)表示的外延膜:xA 2 - (1-x)BO 2 (其中A和B是与式(1)的A和B相同的金属元素,x是0.010或更大至0.035或更小的数值)。 版权所有(C)2009,JPO&INPIT