专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明专利

JP2011093788A Ferroelectric thin film 有权
标题翻译：电磁薄膜
公开(公告)号：JP2011093788A
公开(公告)日：2011-05-12
申请号：JP2010218892
申请日：2010-09-29
申请人： Canon Inc , Kyoto Univ , Tokyo Institute Of Technology , キヤノン株式会社 , 国立大学法人京都大学 , 国立大学法人東京工業大学
发明人： SHIMADA MIKIO , AEBA TOSHIAKI , IFUKU TOSHIHIRO , HAYASHI JUNPEI , KUBOTA JUN , FUNAKUBO HIROSHI , SHIMAKAWA YUICHI , AZUMA MASAKI , NAKAMURA YOSHITAKA
IPC分类号： C01G51/00 , B82Y30/00 , B82Y99/00 , C01G49/06 , H01B3/00 , H01B3/12 , H01L21/8246 , H01L27/105 , H01L41/18 , H01L41/187 , H01L41/39
CPC分类号： H01L41/1878 , H01L28/55 , H01L41/0805 , H01L41/316
摘要： PROBLEM TO BE SOLVED: To provide a ferroelectric thin film formed on a substrate and having an amount of remanent polarization increased in its entirety. SOLUTION: The ferroelectric thin film includes a perovskite-type metal oxide formed on a substrate. The ferroelectric thin film further includes a columnar structure group formed of multiple columns each formed of a spinel-type metal oxide. The columnar structure group is in a state of standing in a direction perpendicular to the surface of the substrate, or in a state of slanting at a slant angle in a range of -10 or more to +10° or less with respect to the perpendicular direction. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供形成在基板上并且具有全部剩余极化量的铁电薄膜。铁电薄膜包括在基板上形成的钙钛矿型金属氧化物。铁电薄膜还包括由尖晶石型金属氧化物形成的多个柱形成的柱状结构体。柱状结构体处于垂直于基板的表面的方向上的状态，或处于相对于垂直方向为-10°〜+ 10°以下的倾斜角度倾斜的状态方向。版权所有（C）2011，JPO＆INPIT

2. 发明专利

JP2011181776A Piezoelectric thin film, piezoelectric element, method of manufacturing the piezoelectric element, liquid discharge head, and ultrasonic motor 有权
标题翻译：压电薄膜，压电元件，制造压电元件，液体放电头和超声波电机的方法
公开(公告)号：JP2011181776A
公开(公告)日：2011-09-15
申请号：JP2010045907
申请日：2010-03-02
申请人： Canon Inc , Kyoto Univ , キヤノン株式会社 , 国立大学法人京都大学
发明人： KUBOTA JUN , TAKEDA KENICHI , HAYASHI JUNPEI , SHIMADA MIKIO , SHIMAKAWA YUICHI , AZUMA MASAKI , NAKAMURA YOSHITAKA , KAWAI MASANORI
IPC分类号： H01L41/18 , B41J2/045 , B41J2/055 , B41J2/135 , B41J2/14 , B41J2/16 , C04B35/00 , H01L41/08 , H01L41/09 , H01L41/187 , H01L41/29 , H01L41/316 , H01L41/317 , H01L41/39 , H02N2/00
CPC分类号： H01L41/1878 , B41J2/14233 , H01L41/0478 , H01L41/081 , H01L41/0973 , H01L41/318 , H02N2/106 , H02N2/163 , Y10T29/42
摘要： PROBLEM TO BE SOLVED: To provide a piezoelectric thin film and a piezoelectric element in which a rhombohedral structure and a tetragonal structure are mixed and have excellent piezoelectric property. SOLUTION: There is provided the piezoelectric thin film made of perovskite metal oxide, such that the crystal system of the perovskite metal oxide is a mixed system having at least the rhombohedral structure and tetragonal structure, and the ratio of an (a)-axial length and a (c)-axial length of the tetragonal structure satisfies 1.15≤c/a≤1.30. The piezoelectric element has a piezoelectric thin film and a pair of electrodes provided in contact with the piezoelectric thin film, which is the piezoelectric thin film. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种混合了菱方结构和四方结构的压电薄膜和压电元件，并具有优异的压电性能。提供了由钙钛矿金属氧化物制成的压电薄膜，使得钙钛矿金属氧化物的晶体体系是至少具有菱方结构和四方结构的混合体系，并且（a）四边形结构的长轴和（c）轴长度满足1.15≤c/a≤1.30。压电元件具有压电薄膜和设置成与作为压电薄膜的压电薄膜接触的一对电极。版权所有（C）2011，JPO＆INPIT

3. 发明专利

JP2013225395A Electron microscope and method for observing specimen 有权
标题翻译：电子显微镜和观察样品的方法
公开(公告)号：JP2013225395A
公开(公告)日：2013-10-31
申请号：JP2012096464
申请日：2012-04-20
申请人： Canon Inc , キヤノン株式会社
发明人： OSHIMA KANAKO , SHIMADA MIKIO , KOYAMA SHINYA , IFUKU TOSHIHIRO , KUBOTA JUN
IPC分类号： H01J37/28 , H01J37/20
摘要： PROBLEM TO BE SOLVED: To provide an electron microscope that eliminates an influence of thermal electrons and can obtain a clear specimen image even though a temperature of a specimen and a peripheral part thereof is 1,100°C or higher, and to provide a method for observing the specimen.SOLUTION: The electron microscope comprises: a specimen stage for mounting at least a specimen thereon; an electron detector for detecting detection electrons generated by irradiating the specimen with an electron beam; and an electron accelerating device that is provided between the specimen stage and the electron detector, and accelerates the detection electrons toward a direction of the electron detector. The electron microscope further comprises an electron shielding sheet that is provided between the specimen stage and the electron accelerating device, has a melting point of 1,100°C or higher and a specific heat of 0.1 cal/g K or less, and has a through hole for passing the detection electrons therethrough.
摘要翻译：要解决的问题：提供一种消除热电子影响的电子显微镜，即使试样及其周边部分的温度为1100℃以上，也可以获得清晰的标本图像，并提供观察方法电子显微镜包括：用于在其上至少安装样品的样品台; 电子检测器，用于检测用电子束照射样本产生的检测电子; 以及电子加速装置，其设置在试样台和电子检测器之间，并且将检测电子朝向电子检测器的方向加速。电子显微镜还包括设置在样品台和电子加速装置之间的电子屏蔽片，其熔点为1100℃以上，比热为0.1cal / gKK以下，具有通孔用于使检测电子通过其中。

4. 发明专利

JP2011213581A Bismuth iron oxide powder, method of producing the same, dielectric ceramics, piezoelectric element, liquid ejection head and ultrasonic motor 有权
标题翻译：双锡氧化铁粉，其制造方法，电介质陶瓷，压电元件，液体喷射头和超声波电机
公开(公告)号：JP2011213581A
公开(公告)日：2011-10-27
申请号：JP2011050307
申请日：2011-03-08
申请人： Canon Inc , Fuji Kagaku Kk , キヤノン株式会社 , 富士化学株式会社
发明人： YABUTA HISATO , KUBOTA JUN , SHIMADA MIKIO , TAKASHIMA KENJI , UCHIDA FUMIO , MAEDA KENJI , SHIMIZU CHIEMI
IPC分类号： C01G49/00 , B41J2/045 , B41J2/055 , B41J2/135 , B41J2/14 , B41J2/16 , C04B35/00 , C04B35/626 , H01L41/08 , H01L41/09 , H01L41/187 , H01L41/22 , H01L41/257 , H01L41/317 , H01L41/333 , H01L41/39 , H01L41/43
CPC分类号： C01G49/02 , B82Y30/00 , C01G29/00 , C01G49/0018 , C01P2002/34 , C01P2002/60 , C01P2002/72 , C01P2002/76 , C01P2004/04 , C01P2004/10 , C01P2004/82 , C01P2006/60 , C04B35/26 , C04B2235/3298 , C04B2235/5445 , C04B2235/5454 , C04B2235/76 , C04B2235/768 , C04B2235/80 , C04B2235/85 , H01L41/1878 , H01L41/43
摘要： PROBLEM TO BE SOLVED: To provide a lead-free dielectric ceramics having a low leakage current and to provide a bismuth iron oxide powder as a raw material of the lead-free dielectric ceramics.SOLUTION: The bismuth iron oxide powder is made of a bithmuth iron oxide and comprises at least: grains (A) having a perovskite-type crystal structure; grains (B) having a crystal structure classified to a space group Pbam; and grains (C) classified to a space group I23. The dielectric ceramics are made of bismuth iron oxide in which the bismuth iron oxide crystals having the crystal structure classified to the space group Pbam are distributed at a grain boundary of crystal grains made of the bismuth iron oxide crystals having the perovskite-type crystal structure.
摘要翻译：要解决的问题：提供具有低漏电流的无铅电介质陶瓷，并提供作为无铅电介质陶瓷的原料的氧化铋铁粉。解决方案：氧化铋粉末由硅酸钡氧化铁，并且至少包括：具有钙钛矿型晶体结构的晶粒（A）具有分类为空间群Pbam的晶体结构的晶粒（B）和分类为空间群I23的粒子（C）。电介质陶瓷由氧化铋铁氧化物制成，其中具有分类为空间群Pbam的晶体结构的氧化铋晶体分布在由具有钙钛矿型晶体结构的氧化铁铋晶体制成的晶粒的晶界处。

5. 发明专利

JP2012131669A Piezoelectric ceramics, manufacturing method therefor, piezoelectric element, liquid discharge head, ultrasonic motor, and dust removal device 有权
标题翻译：压电陶瓷，其制造方法，压电元件，液体放电头，超声波电机和除尘装置
公开(公告)号：JP2012131669A
公开(公告)日：2012-07-12
申请号：JP2010285742
申请日：2010-12-22
申请人： Canon Inc , キヤノン株式会社
发明人： SUZUKI TATSUYA , TSUKAMOTO MASAMI , SHIMADA MIKIO , IFUKU TOSHIHIRO , MATSUDA KATAYOSHI , KUBOTA JUN , HAYASHI JUNPEI
IPC分类号： C04B35/462 , B41J2/045 , B41J2/055 , B41J2/135 , B41J2/14 , B41J2/16 , H01L41/09 , H01L41/187 , H01L41/257 , H01L41/39 , H01L41/43 , H03H9/17
CPC分类号： H01L41/43 , B41J2/161 , B41J2/1623 , B41J2/1632 , B41J2/1642 , B41J2/1646 , B82Y30/00 , C04B35/4682 , C04B35/62655 , C04B35/62695 , C04B35/64 , C04B2235/3201 , C04B2235/3203 , C04B2235/3208 , C04B2235/3213 , C04B2235/3222 , C04B2235/3227 , C04B2235/3232 , C04B2235/3236 , C04B2235/3244 , C04B2235/3262 , C04B2235/3267 , C04B2235/3287 , C04B2235/3293 , C04B2235/3298 , C04B2235/3418 , C04B2235/441 , C04B2235/442 , C04B2235/443 , C04B2235/449 , C04B2235/5445 , C04B2235/5454 , C04B2235/6562 , C04B2235/6567 , C04B2235/761 , C04B2235/85 , H01L41/1871 , H02N2/106 , H02N2/163
摘要： PROBLEM TO BE SOLVED: To provide barium titanate-based piezoelectric ceramics having satisfactory piezoelectric performance and a satisfactory mechanical quality factor (Qm), and to provide a piezoelectric element using the same.SOLUTION: The piezoelectric ceramics includes crystal particles and a grain boundary between the crystal particles, wherein the crystal particles each include barium titanate having a perovskite-type structure and manganese at 0.04-0.20 mass% in terms of a metal with respect to the barium titanate, and the grain boundary includes at least one compound selected from the group consisting of BaTiOand BaTiO, and a piezoelectric element using the same.
摘要翻译：要解决的问题：提供具有令人满意的压电性能和令人满意的机械品质因数（Qm）的钛酸钡系压电陶瓷，并提供使用该压电陶瓷的压电元件。解决方案：压电陶瓷包括晶体颗粒和结晶颗粒之间的晶界，其中晶体颗粒各自包括具有钙钛矿型结构的钛酸钡和以相对于金属的金属为0.04-0.20质量％的锰所述钛酸钡和所述晶界包含至少一种选自下组的化合物：Ti 12 O 27 和 17 和使用该压电元件的压电元件。版权所有（C）2012，JPO＆INPIT

6. 发明专利

JP2009141001A Oxide semiconductor thin-film transistor 有权
标题翻译：氧化物半导体薄膜晶体管
公开(公告)号：JP2009141001A
公开(公告)日：2009-06-25
申请号：JP2007313578
申请日：2007-12-04
申请人： Canon Inc , キヤノン株式会社
发明人： SHIMADA MIKIO
IPC分类号： H01L29/786
CPC分类号： H01L29/7869 , H01L29/78618
摘要： PROBLEM TO BE SOLVED: To solve such a problem that current driving performance is degraded in a bottom gate type TFT because, when voltage is applied to a gate electrode, a channel is formed in a semiconductor layer above the gate electrode, however, no channel is formed in almost many parts of a semiconductor layer immediately under source-drain electrodes, and the semiconductor layer forms a parasitic resistor.
SOLUTION: The transistor includes a gate electrode, a gate insulating layer, a semiconductor layer including an amorphous oxide, source-drain electrodes, and a protective layer on a substrate. The semiconductor layer includes a first region corresponding to a region in which the source-drain electrodes are formed, and a second region not corresponding to the region in which the source-drain electrodes are formed. At least the first region includes a crystalline component having a composition different from the composition of the amorphous oxide in the second region.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：解决的问题为了解决底栅型TFT的电流驱动性能下降的问题，因为当向栅电极施加电压时，沟道形成在栅电极上方的半导体层中在源极 - 漏极电极的正下方的半导体层的几乎多个部分中不形成沟道，并且半导体层形成寄生电阻。解决方案：晶体管包括栅电极，栅极绝缘层，包括非晶氧化物的半导体层，源 - 漏电极和保护层。半导体层包括对应于形成源极 - 漏极的区域的第一区域和不对应于形成源极 - 漏极电极的区域的第二区域。至少第一区域包括具有与第二区域中的无定形氧化物的组成不同的组成的结晶组分。版权所有（C）2009，JPO＆INPIT

7. 发明专利

JP2013227212A Piezoelectric ceramic, piezoelectric element, liquid ejection head, ultrasonic motor, and dust removing device 有权
标题翻译：压电陶瓷，压电元件，液体喷射头，超声波电机和除尘装置
公开(公告)号：JP2013227212A
公开(公告)日：2013-11-07
申请号：JP2013073796
申请日：2013-03-29
申请人： Canon Inc , キヤノン株式会社
发明人： SHIMADA MIKIO , AEBA TOSHIAKI , IFUKU TOSHIHIRO , MATSUDA KATAYOSHI , KUBOTA JUN , FURUTA TATSUO , HAYASHI JUNPEI
IPC分类号： C04B35/462 , B06B1/06 , B41J2/16 , G03B17/02 , H01L41/083 , H01L41/09 , H01L41/187 , H02N2/00 , H03H9/17
CPC分类号： C04B35/49 , B08B7/028 , B41J2/045 , B41J2/14233 , B41J2202/03 , C04B35/4682 , C04B35/62645 , C04B2235/3208 , C04B2235/3215 , C04B2235/3236 , C04B2235/3244 , C04B2235/3248 , C04B2235/3249 , C04B2235/3262 , C04B2235/3263 , C04B2235/449 , C04B2235/5436 , C04B2235/5445 , C04B2235/5454 , C04B2235/6562 , C04B2235/6567 , C04B2235/786 , C04B2235/80 , G02B7/021 , G02B7/022 , G02B7/023 , G02B27/0006 , G03B3/10 , G03B2205/0061 , G03B2205/0084 , H01L41/0471 , H01L41/083 , H01L41/1871 , H02N2/001 , H02N2/106 , H02N2/163
摘要： PROBLEM TO BE SOLVED: To provide a lead-free piezoelectric ceramics having enhanced mechanical quality factor (Qm) and mechanical strength.SOLUTION: A piezoelectric ceramics includes at least a first crystal grain and a second crystal grain. The first crystal grain has an average equivalent circle diameter of 2-30 μm. The first crystal grain includes a perovskite-type metal oxide represented by following general formula (1) as a main component, and the second crystal grain includes a perovskite-type metal oxide represented by following general formula (2) as a main component: (1) xBaTiO-yCaTiO-zCaZrO; and (2) x'BaTiO-y'CaTiO-z'CaZrO, provided that x, y, z, x', y' and z' satisfy x+y+z=1, x'+y'+z'=1, 0≤x'≤0.15, 0.85≤y'≤1, 0≤z'≤0.05, x>x', 0 0.
摘要翻译：要解决的问题：提供具有增强的机械品质因数（Qm）和机械强度的无铅压电陶瓷。解决方案：压电陶瓷至少包括第一晶粒和第二晶粒。第一晶粒的平均当量圆直径为2-30μm。第一晶粒包括由以下通式（1）表示的钙钛矿型金属氧化物作为主要成分，第二晶粒包括由以下通式（2）表示的钙钛矿型金属氧化物作为主要成分：（ 1）xBaTiO-yCaTiO-zCaZrO; 和（2）x'BaTiO-y'CaTiO-z'CaZrO，条件是x，y，z，x'，y'和z'满足x + y + z = 1，x'+ y'+ z'= 1，0≤x'≤0.15,0.85≤y'≤1,0≤z'≤0.05，x> x'，0 0。

8. 发明专利

JP2012156493A Piezoelectric element, liquid ejection head, ultrasonic motor and dust removal device 有权
标题翻译：压电元件，液体喷射头，超声波电机和除尘装置
公开(公告)号：JP2012156493A
公开(公告)日：2012-08-16
申请号：JP2011275097
申请日：2011-12-15
申请人： Canon Inc , キヤノン株式会社
发明人： SHIMADA MIKIO , AEBA TOSHIAKI , IFUKU TOSHIHIRO , MATSUDA KATAYOSHI , WATANABE TAKAYUKI
IPC分类号： H01L41/09 , B41J2/045 , B41J2/055 , B41J2/135 , B41J2/14 , C04B35/462 , H01L21/8246 , H01L27/105 , H01L41/187 , H01L41/22 , H01L41/257 , H01L41/337 , H01L41/39 , H02N2/00
CPC分类号： H01L41/1871 , B08B7/028 , B41J2/14233 , H01L41/0973 , H01L41/43 , H02N2/106 , H02N2/163
摘要： PROBLEM TO BE SOLVED: To provide a piezoelectric element having an enhanced piezoelectric constant, and to provide a liquid ejection head using the piezoelectric element, an ultrasonic motor and a dust removal device.SOLUTION: The piezoelectric element 410 has at least a pair of electrodes 401, 402, and a piezoelectric material 403 provided in contact with the pair of electrodes 401, 402. The piezoelectric material 403 consists of an aggregation 405 of crystal grains 404, 409 containing barium titanate as a main component, and at least the crystal grains 404 in contact with the electrode 401 in the crystal grains of the aggregation 405 have a dislocation layer 407 in the grains.
摘要翻译：要解决的问题：提供一种具有增强的压电常数的压电元件，并提供使用该压电元件的液体喷射头，超声波马达和除尘装置。解决方案：压电元件410具有至少一对电极401,402和与该对电极401,402接触的压电材料403.压电材料403由晶粒404的聚集体405 ，409含有钛酸钡作为主要成分，并且至少与聚集体405的晶粒中的电极401接触的晶粒404在晶粒中具有位错层407。版权所有（C）2012，JPO＆INPIT

9. 发明专利

JP2012148954A Piezoelectric material, piezoelectric element, liquid discharging head, ultrasonic motor and dust removing apparatus 有权
标题翻译：压电材料，压电元件，液体放电头，超声波电机和除尘装置
公开(公告)号：JP2012148954A
公开(公告)日：2012-08-09
申请号：JP2011194072
申请日：2011-09-06
申请人： Canon Inc , Univ Of Yamanashi , キヤノン株式会社 , 国立大学法人山梨大学
发明人： HAYASHI JUNPEI , YABUTA HISATO , KUBOTA JUN , SHIMADA MIKIO , WADA TOMOSHI , FUJII ICHIRO , MITSUI RYUTA , KUMADA NOBUHIRO
IPC分类号： C04B35/462 , C04B35/00 , H01L41/09 , H01L41/187 , H03H9/17
CPC分类号： H01L41/1871 , B41J2/14233 , C04B35/26 , C04B35/4682 , C04B35/475 , C04B35/6262 , C04B35/6264 , C04B35/632 , C04B35/63416 , C04B35/63444 , C04B35/638 , C04B2235/3206 , C04B2235/3232 , C04B2235/3236 , C04B2235/3262 , C04B2235/3272 , C04B2235/3279 , C04B2235/3281 , C04B2235/3298 , C04B2235/442 , C04B2235/5445 , C04B2235/6025 , C04B2235/604 , C04B2235/768 , C04B2235/77 , C04B2235/782 , C04B2235/785 , C04B2235/786 , G02B27/0006 , H01L41/09 , H01L41/0973 , H01L41/1878 , H02N2/106 , H02N2/163 , H04N5/2171
摘要： PROBLEM TO BE SOLVED: To provide a piezoelectric material having both high piezoelectric performance and a high Curie temperature, and to provide a piezoelectric element, a liquid discharging head, an ultrasonic motor and a dust removing apparatus using the same.SOLUTION: The piezoelectric material comprises a perovskite type metal oxide represented by general formula (1): xBaTiO-yBiFeO-zBi(MTi)Owherein M is at least one element selected from Mg and Ni, and x, y and z denote a numeral value having ranges of 0.25≤x≤0.75, 0.15≤y≤0.70, and 0.05≤z≤0.60, provided that x+y+z=1.
摘要翻译：解决的问题：提供具有高压电性能和高居里温度的压电材料，并提供压电元件，液体排放头，超声波马达和使用该压电元件的除尘设备。解决方案：压电材料包括由通式（1）表示的钙钛矿型金属氧化物：xBaTiO 3 -yBiFeO 3 -zBi（M 0.5 ）○ 3 其中M是选自Mg和Ni中的至少一种元素，x，y和z表示数值，其范围为0.25≤x≤0.75,0.15≤y≤0.70,0.05≤z≤0.60，条件是x + y + z = 1。版权所有（C）2012，JPO＆INPIT

10. 发明专利

JP2011146724A Thin film transistor, method for manufacturing the same, and display apparatus using the thin film transistor 有权
标题翻译：薄膜晶体管，其制造方法和使用薄膜晶体管的显示装置
公开(公告)号：JP2011146724A
公开(公告)日：2011-07-28
申请号：JP2011031543
申请日：2011-02-17
申请人： Canon Inc , キヤノン株式会社
发明人： SHIMADA MIKIO , HAYASHI SUSUMU , KUMOMI HIDEYA
IPC分类号： H01L21/336 , G02F1/1368 , H01L29/786 , H01L51/50
CPC分类号： H01L33/16 , H01L29/66969 , H01L29/78606 , H01L29/7869 , H01L29/78696 , H01L33/0054
摘要： PROBLEM TO BE SOLVED: To improve variations in characteristics among TFTs due to the unevenness of damage, which a semiconductor layer receives when a protective layer is formed by sputtering or the like, and to enhance the evenness of an image in an active matrix type display apparatus employing the TFTs. SOLUTION: A thin film transistor includes a gate electrode, a gate insulating layer, a semiconductor layer made of an amorphous oxide, a source electrode, a drain electrode, and a protective layer. The protective layer is provided on the semiconductor layer in contact with the semiconductor layer. The semiconductor layer includes a first layer at least functioning as a channel layer and a second layer having higher resistance than the first layer. The second layer is provided on the protective layer side of the semiconductor layer. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：为了改善由于通过溅射等形成保护层时半导体层接收的损伤的不均匀性，提高TFT之间的特性的变化，并且提高活性物体中的图像的均匀度采用TFT的矩阵型显示装置。解决方案：薄膜晶体管包括栅电极，栅绝缘层，由非晶氧化物制成的半导体层，源电极，漏电极和保护层。保护层设置在与半导体层接触的半导体层上。半导体层包括至少用作沟道层的第一层和具有比第一层更高的电阻的第二层。第二层设置在半导体层的保护层侧。版权所有（C）2011，JPO＆INPIT

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式