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1. 发明专利

JP2013211539A Piezoelectric element, liquid discharging head, and liquid discharging device 有权
标题翻译：压电元件，液体排出头和液体排出装置
公开(公告)号：JP2013211539A
公开(公告)日：2013-10-10
申请号：JP2013035931
申请日：2013-02-26
申请人： Canon Inc , キヤノン株式会社 , Tokyo Institute Of Technology , 国立大学法人東京工業大学 , Sophia School Corp , 学校法人上智学院
发明人： KUBOTA JUN , MIURA KAORU , YABUTA HISATO , WATANABE TAKAYUKI , HAYASHI JUNPEI , FUNAKUBO HIROSHI , YASUI SHINTARO , OIKAWA TAKAHIRO , OSADA JUNICHI , UCHIDA HIROSHI
IPC分类号： H01L41/09 , B41J2/045 , B41J2/055 , C04B35/462 , H01L41/18 , H01L41/187
CPC分类号： H01L41/18 , B41J2/045 , B41J2/14233 , B41J2202/03 , H01L41/0478 , H01L41/0815 , H01L41/1878 , H01L41/316 , H01L41/318
摘要： PROBLEM TO BE SOLVED: To provide a piezoelectric element arranged by use of a Bi-based piezoelectric material film with a large piezoelectric strain.SOLUTION: The piezoelectric element comprises: a substrate; a lower electrode; and a piezoelectric material film 3 including, as a primary component, a perovskite metal oxide represented by the general formula: [Formula] (In the formula, A represents Bi or a combination of Bi and at least one element selected from trivalent metal elements; M is at least one element of Fe, Al, Sc, Mn, Y, Ga and Yb; x, j, k, l, m and n each fall in a predetermined numerical value range and satisfy l+m+n=1). The perovskite metal oxide is uniaxially orientated in a thickness direction of the film as to (111) plane in pseudo-cubic crystal notation. The lower electrode includes a first electrode layer 201 in contact with the substrate, and a second electrode layer 202 in contact with the piezoelectric material film. The second electrode layer 202 forms a perovskite metal oxide electrode which is uniaxially orientated in the thickness direction of the film as to (111) plane in pseudo-cubic crystal notation.
摘要翻译：要解决的问题：提供一种使用具有大的压电应变的Bi基压电材料膜布置的压电元件。解决方案：压电元件包括：基板; 下电极以及作为主成分的由以下通式表示的钙钛矿型金属氧化物作为主要成分的压电材料膜3：[式]（式中，A表示Bi或Bi与选自三价金属元素中的至少一种元素的组合） M是Fe，Al，Sc，Mn，Y，Ga和Yb中的至少一种元素; x，j，k，l，m和n分别落在预定的数值范围内，满足l + m + n = 1）。钙钛矿金属氧化物以薄膜的厚度方向为单轴取向，以（111）面为假立方晶体符号。下电极包括与基板接触的第一电极层201和与压电材料膜接触的第二电极层202。第二电极层202形成以假立方晶体符号为单位在膜的厚度方向上以（111）面为单轴取向的钙钛矿金属氧化物电极。

2. 发明专利

JP2012084828A Piezoelectric material, piezoelectric element, liquid discharge head and ultrasonic motor 有权
标题翻译：压电材料，压电元件，液体放电头和超声波电机
公开(公告)号：JP2012084828A
公开(公告)日：2012-04-26
申请号：JP2010292850
申请日：2010-12-28
申请人： Canon Inc , Sophia School Corp , Tokyo Institute Of Technology , キヤノン株式会社 , 国立大学法人東京工業大学 , 学校法人上智学院
发明人： KUBOTA JUN , MIURA KAORU , YABUTA HISATO , WATANABE TAKAYUKI , HAYASHI JUNPEI , FUNAKUBO HIROSHI , YAMADA TOMOAKI , YASUI SHINTARO , YAZAWA KEISUKE , OSADA JUNICHI , UCHIDA HIROSHI
IPC分类号： H01L41/187 , B41J2/045 , B41J2/055 , B41J2/135 , B41J2/14 , C04B35/00 , C04B35/462 , C23C14/08 , C23C16/40 , H01L41/09 , H01L41/18 , H01L41/39 , H02N2/00
CPC分类号： H01L41/18 , C04B35/01 , C04B35/016 , C04B35/2625 , C04B35/44 , C04B35/453 , C04B35/475 , C04B35/6325 , C04B2235/3206 , C04B2235/3217 , C04B2235/3224 , C04B2235/3225 , C04B2235/3227 , C04B2235/3232 , C04B2235/3267 , C04B2235/3272 , C04B2235/3284 , C04B2235/3286 , C04B2235/3298 , C04B2235/449 , C04B2235/76 , C04B2235/765 , C04B2235/768 , C04B2235/787 , H01L41/0805 , H01L41/0973 , H01L41/1878 , H01L41/316 , H01L41/318 , H02N2/106 , H02N2/163
摘要： PROBLEM TO BE SOLVED: To provide a Bi-based piezoelectric material with excellent piezoelectric characteristics.SOLUTION: A piezoelectric material comprises a perovskite-type metal oxide represented by the following general formula (1). (In the formula, A represents not less than one element including at least Bi element selected from Bi element and trivalent metal elements. M represents at least one element of Fe, Al, Sc, Mn, Y, Ga, and Yb, 0.9≤x≤1.25, 0.4≤j≤0.6, 0.4≤k≤0.6, 0.09≤l≤0.49, 0.19≤m≤0.64, 0.13≤n≤0.48, and l+m+n=1.)
摘要翻译：解决的问题：提供具有优异的压电特性的Bi系压电材料。解决方案：压电材料包括由以下通式（1）表示的钙钛矿型金属氧化物。（式中，A表示不低于选自Bi元素和三价金属元素中的至少Bi元素的1种元素，M表示Fe，Al，Sc，Mn，Y，Ga和Yb中的至少一种元素，0.9≤ x≤1.25,0.4≤j≤0.6,0.4≤k≤0.6,0.09≤l≤0.49,0.19≤m≤0.64,0.13≤n≤0.48，l + m + n = 1）。权利要求（（ C）2012，JPO＆INPIT

3. 发明专利

JP2010183067A Piezoelectric material and piezoelectric element 有权
标题翻译：压电材料和压电元件
公开(公告)号：JP2010183067A
公开(公告)日：2010-08-19
申请号：JP2009293305
申请日：2009-12-24
申请人： Canon Inc , National Institute Of Advanced Industrial Science & Technology , Sophia School Corp , Tokyo Institute Of Technology , キヤノン株式会社 , 国立大学法人東京工業大学 , 学校法人上智学院 , 独立行政法人産業技術総合研究所
发明人： KUBOTA JUN , IFUKU TOSHIHIRO , FUNAKUBO HIROSHI , YAZAWA KEISUKE , UCHIDA HIROSHI , IIJIMA TAKASHI , LEE BONG-YEON
IPC分类号： H01L41/18 , C04B35/00 , C23C16/40 , C30B29/22 , H01L21/8246 , H01L27/105 , H01L41/08 , H01L41/09 , H01L41/187 , H01L41/22 , H01L41/316 , H01L41/39
CPC分类号： C04B35/111 , C04B35/01 , C04B2235/3217 , C04B2235/3225 , C04B2235/3232 , C04B2235/3262 , C04B2235/327 , C04B2235/3284 , C04B2235/3298 , H01L41/1878 , H01L41/316 , Y10S428/938 , Y10T428/265
摘要： PROBLEM TO BE SOLVED: To provide a piezoelectric material superior in piezoelectricity, having a monoclinic structure in which the rotation of a polarization axis becomes sensitive to an external electric field, in comparison with other crystal system. SOLUTION: The piezoelectric material includes a perovskite-type composite oxide represented by formula (1): A (Zn x Ti (1-x) ) y M (1-y) O 3 . The crystal system of the perovskite-type composite oxide includes at least the monoclinic structure. Preferably, the crystal system of the perovskite-type composite oxide is a mixture having the monoclinic structure and a rhombohedral structure, or a mixture having the monoclinic structure and a tetragonal structure. In the formula (1), A represents a Bi element, and M represents at least one element selected from Fe, Al, Sc, Mn, Y, Ga, and Yb. The x represents a numerical value of 0.4≤x≤0.6, and y represents a numerical value of 0.17≤y≤0.60. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：与其他晶体系相比，提供压电性优异的压电材料，其具有偏光轴的旋转对外部电场敏感的单斜晶体结构。＆lt; P＆gt;解决方案：压电材料包括由式（1）表示的钙钛矿型复合氧化物：A（Zn x Ti（SB）（1-x） ÿ中号（1-y）的 0 3 。钙钛矿型复合氧化物的晶体系至少包括单斜晶系。优选地，钙钛矿型复合氧化物的晶体体系是具有单斜晶系结构和菱面体结构的混合物，或具有单斜晶系结构和四方结构的混合物。在式（1）中，A表示Bi元素，M表示选自Fe，Al，Sc，Mn，Y，Ga和Yb中的至少一种元素。 x表示数值0.4≤x≤0.6，y表示数值为0.17≤y≤0.60。版权所有（C）2010，JPO＆INPIT

4. 发明专利

JP2010053024A Metal oxide and piezoelectric material 有权
标题翻译：金属氧化物和压电材料
公开(公告)号：JP2010053024A
公开(公告)日：2010-03-11
申请号：JP2009173542
申请日：2009-07-24
申请人： Canon Inc , Kyoto Univ , National Institute Of Advanced Industrial Science & Technology , Sophia School Corp , Tokyo Institute Of Technology , Tokyo Univ Of Science , Univ Of Yamanashi , キヤノン株式会社 , 国立大学法人京都大学 , 国立大学法人山梨大学 , 国立大学法人東京工業大学 , 学校法人上智学院 , 学校法人東京理科大学 , 独立行政法人産業技術総合研究所
发明人： KUBOTA JUN , MIURA KAORU , IFUKU TOSHIHIRO , HAYASHI JUNPEI , AZUMA MASAKI , SMIRNOVA OLGA ALEXANDROVNA , FUNAKUBO HIROSHI , UCHIDA HIROSHI , KUMADA NOBUHIRO , WADA TOMOSHI , IIJIMA TAKASHI , OKAMURA SOICHIRO
IPC分类号： C04B35/46 , C04B35/462 , H01L41/187 , H01L41/22 , H01L41/317 , H01L41/39
CPC分类号： H01L41/1878 , C04B35/2658 , C04B35/44 , C04B35/475 , C04B35/645 , C04B2235/3217 , C04B2235/3227 , C04B2235/3232 , C04B2235/3262 , C04B2235/3272 , C04B2235/3284 , C04B2235/3298 , C04B2235/441 , C04B2235/449 , C04B2235/76 , C04B2235/765 , C04B2235/768 , H01L41/318 , Y10T428/265
摘要： PROBLEM TO BE SOLVED: To provide a metal oxide having good piezoelectric properties, and to provide a Bi-based piezoelectric material having excellent performances as a piezoelectric body. SOLUTION: The metal oxide is composed of a perovskite-type oxide represented by the general formula (1). The piezoelectric material contains the metal oxide. In the general formula (1), A represents at least one kind of element containing at least Bi element and selected from trivalent metal elements at least including Bi element, M represents at least one kind of element selected from Fe, Al, Sc, Mn, Y, Ga, and Yb, x represents a numerical value satisfying 0.4≤x≤0.6, and y represents a numerical value satisfying 0.1≤y≤0.9. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供具有良好压电性能的金属氧化物，并提供作为压电体具有优异性能的Bi系压电材料。解决方案：金属氧化物由通式（1）表示的钙钛矿型氧化物构成。压电材料含有金属氧化物。在通式（1）中，A表示至少一种至少含有Bi元素的元素，并且选自至少包含Bi元素的三价金属元素，M表示选自Fe，Al，Sc，Mn中的至少一种元素，Y，Ga和Yb，x表示满足0.4≤x≤0.6的数值，y表示满足0.1≤y≤0.9的数值。版权所有（C）2010，JPO＆INPIT

5. 发明专利

JP2013185213A Metal nanoparticle, method for producing the same, and conductive ink 有权
标题翻译：金属纳米材料，其制造方法和导电墨水
公开(公告)号：JP2013185213A
公开(公告)日：2013-09-19
申请号：JP2012051636
申请日：2012-03-08
申请人： Tokyo Institute Of Technology , 国立大学法人東京工業大学 , Showa Denko Kk , 昭和電工株式会社
发明人： WADA YUJI , CHIN SATOSHI , MOCHIZUKI MASARU , UCHIDA HIROSHI , SHINOZAKI KENJI , TOMITA HIROYUKI
IPC分类号： B22F1/02 , B22F1/00 , B22F9/24 , C09D11/00 , H01B1/00 , H01B1/22 , H01B5/00 , H01B13/00
摘要： PROBLEM TO BE SOLVED: To provide a method for easily producing a metal nanoparticle which is not easily oxidized even when having a relatively low silver content, the metal nanoparticle obtainable by the production method, and a conductive ink using the metal nanoparticle.SOLUTION: A core particle of a first metal is produced by heating a core-forming solution including a first metal precursor and an organic solvent. By adding a second metal precursor, wherein the second metal has lower ionization tendency than the first metal, to the solution including the core particle of the first metal and heating the solution, displacement plating is performed on a surface layer of the core particle with the second metal, thereby allowing the second metal particle having a smaller diameter than the core particle to precipitate on the surface of the core particle. Also, a layer of the first metal in which the second metal particle is enclosed is produced by reducing the first metal ion produced by the displacement plating. Thus the metal nanoparticle is obtained by forming a shell covering the surface of the core particle.
摘要翻译：要解决的问题：提供一种易于制造金属纳米颗粒的方法，其即使在银含量较低时也不容易氧化，可以通过制备方法得到的金属纳米颗粒和使用金属纳米颗粒的导电油墨。通过加热包含第一金属前体和有机溶剂的芯形成溶液来制造第一金属的核心颗粒。通过添加第二金属前体，其中第二金属比第一金属具有更低的离子化倾向，向包含第一金属的芯颗粒的溶液中加热溶液，在芯颗粒的表面层上进行置换镀从而允许具有比核心颗粒小的直径的第二金属颗粒在核心颗粒的表面上沉淀。此外，通过还原由位移镀产生的第一金属离子，产生其中封入第二金属颗粒的第一金属层。因此，通过形成覆盖芯颗粒的表面的壳来获得金属纳米颗粒。

6. 发明专利

JP2006176366A Ferroelectric material, method of manufacturing the same and ferroelectric memory 审中-公开
标题翻译：电磁材料，其制造方法和电磁记忆体
公开(公告)号：JP2006176366A
公开(公告)日：2006-07-06
申请号：JP2004371905
申请日：2004-12-22
申请人： Fujitsu Ltd , Tokyo Institute Of Technology , 国立大学法人東京工業大学 , 富士通株式会社
发明人： KONDO MASAO , MARUYAMA KENJI , UENO RISAKO , FUNAKUBO HIROSHI , UCHIDA HIROSHI , KODA SEIICHIRO , NAKAGI HIROSHI
IPC分类号： C04B35/00 , H01B3/00 , H01B3/12 , H01L21/8246 , H01L21/8247 , H01L27/105 , H01L29/788 , H01L29/792
CPC分类号： C23C18/1275 , C23C18/1216 , H01L21/31691 , H01L27/11502 , H01L27/11585 , H01L27/1159 , H01L28/56
摘要： PROBLEM TO BE SOLVED: To provide a ferroelectric material containing no lead and showing residual dielectric polarization nearly equal to that of PZT and a method of manufacturing the same. SOLUTION: A precursor solution of BiFeO 3 is applied on the surface of a base member. After the application, a heat treatment is carried out to obtain a dielectric film. The dielectric film is heated under a non-oxidizing atmosphere to be crystallized. As a result, the ferroelectric material containing Bi, Fe and O as structural elements and having a tetragonal or orthorhombic crystal lattice is obtained. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种不含铅的铁电材料和显示与PZT几乎相同的残余介电极化及其制造方法。解决方案：将BiFeO SB 3的前体溶液施加在基底部件的表面上。在施加之后，进行热处理以获得电介质膜。将电介质膜在非氧化性气氛下加热使其结晶化。结果，获得含有Bi，Fe和O作为结构元素并具有四方晶或正交晶格的铁电材料。版权所有（C）2006，JPO＆NCIPI

7. 发明专利

JP2013101808A Microwave heating device and microwave heating method 审中-公开
标题翻译：微波加热装置和微波加热方法
公开(公告)号：JP2013101808A
公开(公告)日：2013-05-23
申请号：JP2011244284
申请日：2011-11-08
申请人： Showa Denko Kk , 昭和電工株式会社 , National Institute Of Advanced Industrial & Technology , 独立行政法人産業技術総合研究所 , Tokyo Institute Of Technology , 国立大学法人東京工業大学
发明人： UCHIDA HIROSHI , TOMITA HIROYUKI , SHINOZAKI KENJI , TAKEUCHI KAZUHIKO , NAGAHATA RITSUKO , HARANAKA MASAYUKI , WADA YUJI , MOCHIZUKI MASARU
IPC分类号： H05B6/70
摘要： PROBLEM TO BE SOLVED: To provide a microwave heating device and a microwave heating method capable of properly heating a film of a conductor and a film of a dispersion formed by dispersing the conductor.SOLUTION: While supplying a microwave having 1 m to 1 mm of a wavelength range to a microwave tube 16a, in the microwave tube 16a, a substrate 24 forming a film of a conductor and the film of a dispersion formed by dispersing the conductor is disposed in a position where the forming surface of the film becomes parallel to the magnetic line direction of the microwave and the maximum point of a magnetic field of the microwave is included, and the position thereof is moved.

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