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1. 发明专利

JP2012156409A Light-emitting device for backlight 审中-公开
标题翻译：用于背光的发光装置
公开(公告)号：JP2012156409A
公开(公告)日：2012-08-16
申请号：JP2011015867
申请日：2011-01-28
申请人： Mitsubishi Shindoh Co Ltd , 三菱伸銅株式会社
发明人： SAKURAI TAKESHI , FUNAKI SHINICHI , SUKUMODA SHUNROKU , OMURA TAKU
IPC分类号： H01L33/48
摘要： PROBLEM TO BE SOLVED: To provide a light-emitting device for backlight which has good heat radiation characteristic, excellent in durability over a long period of use, has a low manufacturing cost, being excellent in directivity of light, and capable of properly radiating LED beam to a display part (light receiving part) which is an object.SOLUTION: The light-emitting device for backlight includes a contoured cross section plate of copper or copper alloy having a rough part of heat conductivity being 150-400 W/(m/K), on the surface of which a kind of plating is performed which is selected from a group consisting of Sn plating, Ni plating, Ag plating, Ag-Sn alloy plating, with glossiness being 80-110%, a cathode pattering circuit and an anode patterning circuit formed on the side face of a recess of the contoured cross section plate, a plurality of light emitting elements that are directly mounted on the bottom surface of the recess, and are connected in series or parallel by wiring to the cathode patterning circuit and the anode patterning circuit, and transparent resin which so seals the inside of the recess as to cover the plurality of light emitting elements.
摘要翻译：要解决的问题：为了提供一种具有良好的散热特性，长期使用的耐久性优异的背光用发光装置，制造成本低，光的方向性优异，能够将LED光束适当地照射到作为对象的显示部（光接收部）。解决方案：用于背光的发光装置包括铜或铜合金的轮廓截面板，其导热率的大部分为150-400W /（m / K），其表面上有一种进行电镀，其选自Sn镀层，Ni镀层，Ag镀层，Ag-Sn合金镀层，光泽度为80-110％，阴极图案电路和阳极图案形成电路形成在轮廓截面板的凹部，直接安装在凹部的底面上并且通过布线串联或并联连接到阴极图案形成电路和阳极图案形成电路的多个发光元件和透明树脂，因此密封凹部的内部以覆盖多个发光元件。版权所有（C）2012，JPO＆INPIT

2. 发明专利

JP2011208271A Cu-Fe-P BASED COPPER ALLOY STRIP MATERIAL FOR ELECTRONIC EQUIPMENT HAVING EXCELLENT RESIN ADHESION 有权
标题翻译：用于具有优异树脂粘合性的电子设备的Cu-Fe-P基铜合金材料
公开(公告)号：JP2011208271A
公开(公告)日：2011-10-20
申请号：JP2010170976
申请日：2010-07-29
申请人： Mitsubishi Shindoh Co Ltd , 三菱伸銅株式会社
发明人： SAKURAI TAKESHI , FUNAKI SHINICHI , HIRAGA MIZUHO
IPC分类号： C22C9/00 , B21B3/00 , C22F1/00 , C22F1/08 , C23C22/78 , C23F1/18 , H01B1/02 , H01B5/02 , H01L23/50
CPC分类号： H01L2924/0002 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a Cu-Fe-P based copper alloy strip material for electronic equipment having excellent resin adhesion, which is easily and homogeneously roughened with an ordinary surface treatment agent or by ordinary blackening treatment.SOLUTION: The strip material has a composition comprising, by mass, 1.5 to 2.4% Fe, 0.008 to 0.08% P and 0.01 to 0.5% Zn, and the balance Cu with inevitable impurities, and in which the orientation density in a Cube orientation measured by EBSD (Electron Back-Scatter Diffraction) within the crystal structure in the range from the surface to a depth of 10 μm is 10 to 20%, and the average crystal grain size measured by EBSD is 10 to 20 μm.
摘要翻译：要解决的问题：提供一种具有优异的树脂粘附性的电子设备的Cu-Fe-P系铜合金带材，其易于均匀地用普通的表面处理剂粗糙化或通过普通的黑化处理。解决方案：条带材料具有组合物，其含有1.5〜2.4％的Fe，0.008〜0.08％的P和0.01〜0.5％的Zn，余量为Cu与不可避免的杂质，其中通过EBSD（Electron Back- 从表面到深度10μm范围内的晶体结构内的散射衍射为10〜20％，通过EBSD测定的平均结晶粒径为10〜20μm。

3. 发明专利

JP2013194246A Cu-Cr-Sn-BASED COPPER ALLOY SHEET FOR LEAD FRAME WITH LITTLE RESIDUAL STRESS 审中-公开
标题翻译：用于具有较小残余应力的铅框架的Cu-Cr-Sn基铜合金板
公开(公告)号：JP2013194246A
公开(公告)日：2013-09-30
申请号：JP2012059206
申请日：2012-03-15
申请人： Mitsubishi Shindoh Co Ltd , 三菱伸銅株式会社
发明人： KUMAGAI JUNICHI , FUNAKI SHINICHI
IPC分类号： C22C9/00 , C22C9/01 , C22C9/02 , C22C9/04 , C22C9/10 , C22F1/00 , C22F1/08
摘要： PROBLEM TO BE SOLVED: To provide a Cu-Cr-Sn-based copper alloy sheet for a lead frame with little residual stress, having homogeneous etching (especially half etching) characteristics with little warpage, and a manufacturing method for the same.SOLUTION: A Cu-Cr-Sn-based copper alloy sheet is a copper alloy sheet having an alloy composition containing 0.1-1.0 mass% Cr, 0.05-1.5 mass% Sn, and 0.05-1.5 mass% Zn, with the balance being Cu and inevitable impurities, an average value of KAM is 0.3 or smaller in crystal orientation analysis in EBSD measurement by SEM, and the maximum value of an orientation density curve of a β fiber is 8.0 or smaller.
摘要翻译：要解决的问题：提供一种用于具有很小残余应力的引线框架的Cu-Cr-Sn系铜合金板及其制造方法的均匀蚀刻（特别是半蚀刻）特性。 Cu-Cr-Sn系铜合金板是具有0.1〜1.0质量％的Cr，0.05〜1.5质量％的Sn和0.05〜1.5质量％的Zn的合金组成的铜合金板，余量为Cu且不可避免杂质，通过SEM对EBSD测定中的结晶取向分析中的KAM的平均值为0.3以下，并且a＆Bgr的取向密度曲线的最大值。纤维为8.0或更小。

4. 发明专利

JP2012134435A Light-emitting device for back light 审中-公开
标题翻译：用于背光的发光装置
公开(公告)号：JP2012134435A
公开(公告)日：2012-07-12
申请号：JP2011025707
申请日：2011-02-09
申请人： Mitsubishi Shindoh Co Ltd , 三菱伸銅株式会社
发明人： SAKURAI TAKESHI , FUNAKI SHINICHI , SUKUMODA SHUNROKU , OMURA TAKU
IPC分类号： H01L33/64 , H01L33/58
CPC分类号： H01L2224/45144 , H01L2224/48137 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a light-emitting device for back light produced at low cost which has good heat dissipation, excellent durability in long-term use and superior directivity of light, and can accurately illuminate a target display part.SOLUTION: A light-emitting device for back light comprises a Cu or Cu alloy irregular shaped cross section plate 2 having concave and convex parts having 150 to 400 W/(mk) of coefficient of thermal conductivity and to which one kind of plating selected from a group consisting of Sn plating, Ni plating, Ag plating, and Ag-Sn alloy plating having 80 to 110% of degree of brilliance, is applied on the surface; a cathode patterning circuit and an anode patterning circuit formed on a bottom surface of the concave part 3 of the irregular shaped cross section plate 2; a plurality of light-emitting elements 4, 4a, 4b directly mounted on the bottom surface of the concave part 3 and connected in series or in parallel between the cathode patterning circuit and the anode patterning circuit; and transparent resin sealing the inside of the concave part 3 so as to cover a plurality of light-emitting elements 4, 4a, 4b.
摘要翻译：要解决的问题：提供一种低成本制造的背光发光装置，其具有良好的散热性，长期使用的优异的耐久性和优异的光的方向性，并且可以精确地照射目标显示部分。解决方案：用于背光的发光装置包括Cu或Cu合金不规则形状的截面板2，其具有150至400W /（mk）导热系数的凹凸部分，并且其中一种在表面上涂布选自由Sn镀层，Ni镀层，Ag镀覆和80〜110％光泽度的Ag-Sn合金镀层组成的镀层; 形成在该不规则形状的截面板2的凹部3的底面上的阴极图案形成电路和阳极图案形成电路; 多个发光元件4,4a，4b，直接安装在凹部3的底面上并串联或并联连接在阴极构图电路和阳极构图电路之间; 并且透明树脂密封凹部3的内部以覆盖多个发光元件4,4a，4b。版权所有（C）2012，JPO＆INPIT

5. 发明专利

JP2011252215A Copper alloy strip material excellent in heat dissipation and adhesion and prepared for electronic apparatus 有权
标题翻译：铜合金材料在散热和粘合方面优于电子设备
公开(公告)号：JP2011252215A
公开(公告)日：2011-12-15
申请号：JP2010127940
申请日：2010-06-03
申请人： Mitsubishi Shindoh Co Ltd , 三菱伸銅株式会社
发明人： SAKURAI TAKESHI , FUNAKI SHINICHI
IPC分类号： C22C9/00 , C22F1/00 , C22F1/08 , H01B1/02 , H01B5/02 , H01L33/64
CPC分类号： H01L2224/48091 , H01L2924/181 , H01L2924/00014 , H01L2924/00012
摘要： PROBLEM TO BE SOLVED: To provide a Cu-Fe-P-based copper alloy thin plate having good resin adhesion and suited to be used as a heat dissipation board in chip-on-board of an LED chip or the like capable of efficiently dissipating heat.SOLUTION: A copper alloy strip material contains 1.5 to 2.4 mass% of Fe, 0.008 to 0.08 mass% of P, 0.01 to 0.5 mass% of Zn and a remainder composed of Cu and inevitable impurities. In the copper alloy strip material: orientation density of a cube orientation measured by an EBSD method in a crystal structure of a depth range up to 10 μm from the surface of the copper alloy strip material is 10 to 20%; an average crystal grain size measured by the EBSD method is 12 to 20 μm; a maximum height Rz of a surface of a portion obtained by roughening the surface of the copper alloy strip material by a surface treatment agent is 1.0 to 2.0 μm; arithmetic mean roughness Ra of a surface of a portion which is not roughened is 0.02 to 0.05 μm; a maximum height Rz of the surface of the portion which is not roughened is 0.20 to 0.40 μm; and a ratio Rq/Rz of root mean square roughness Rq to the maximum height Rz is 0.10 to 0.25.
摘要翻译：要解决的问题：提供具有良好树脂粘合性的Cu-Fe-P系铜合金薄板，并且适合用作LED芯片等的片上散热板，其能够有效地散热。解决方案：铜合金带材含有1.5〜2.4质量％的Fe，0.008〜0.08质量％的P，0.01〜0.5质量％的Zn，余量由Cu和不可避免的杂质构成。在铜合金条材料中：通过EBSD法在距离铜合金条状材料表面至多10μm的晶体结构中测得的立方取向的取向密度为10-20％; 通过EBSD法测定的平均晶粒尺寸为12〜20μm; 通过表面处理剂使铜合金带材的表面粗糙化得到的部分的表面的最大高度Rz为1.0〜2.0μm，未粗糙化的部分的表面的算术平均粗糙度Ra为0.02〜0.05μm; 未粗糙化部分的表面的最大高度Rz为0.20〜0.40μm; 并且均方根粗糙度Rq与最大高度Rz的比率Rq / Rz为0.10〜0.25。版权所有（C）2012，JPO＆INPIT

6. 发明专利

JP2015017286A 光沢度に優れためっき付き銅合金板有权
标题翻译：镀银铜合金板材，具有优异的光泽度
公开(公告)号：JP2015017286A
公开(公告)日：2015-01-29
申请号：JP2013143454
申请日：2013-07-09
申请人：三菱伸銅株式会社 , Mitsubishi Shindoh Co Ltd
发明人： KUMAGAI JUNICHI , FUNAKI SHINICHI
IPC分类号： C22C9/00 , C25D5/34
摘要：【課題】均質で良好なAg或いはNiめっき光沢度を有するリードフレーム用のめっき付き銅合金板及びその製造に使用するCu−Fe−P系銅合金母板の製造方法を提供する。【解決手段】Fe;1.5〜2.4質量%、P;0.008〜0.08質量%、Zn;0.01〜0.5質量%、残部がCuおよび不可避的不純物である組成を有し、表面の加工変質層の厚みが0.1〜0.5μmであり、結晶粒径が0.05〜0.5μmであり、前記加工変質層の表面の最大高さ粗さ(Rz)と表面の二乗平均平方根粗さ(Rq)との比(Rz/Rq)が6.5〜8.0である銅合金母板と、前記加工変質層の上に形成されたAgめっき層或いはNiめっき層とを有する。【選択図】図1
摘要翻译：要解决的问题：提供一种具有均匀且令人满意的Ag或Ni电镀光泽度的用于引线框架的电镀配合铜合金板，以及用于制造镀层的Cu-Fe-P系铜合金母板的方法，电镀铜合金板包括：铜合金母片，具有以质量计为1.5〜2.4％的Fe，0.008〜0.08％的P，0.01〜0.5％的Zn，以及余量为Cu和不可避免的杂质，其中工作影响层的表面厚度为0.1〜0.5μm，结晶粒径为0.05〜0.5μm，表面的最大高度粗糙度（Rz）的工作影响层与均方根粗糙度（Rq），（Rz / Rq）满足6.5〜8.0; 以及形成在受影响层上的Ag镀层或Ni镀层。

7. 发明专利

JP2013144823A Silver alloy sputtering target for conductive film formation, and method for producing the same 有权
标题翻译：用于导电膜形成的银合金溅射靶，及其制造方法
公开(公告)号：JP2013144823A
公开(公告)日：2013-07-25
申请号：JP2012005053
申请日：2012-01-13
申请人： Mitsubishi Materials Corp , 三菱マテリアル株式会社 , Mitsubishi Shindoh Co Ltd , 三菱伸銅株式会社
发明人： KOMIYAMA SHOZO , FUNAKI SHINICHI , KOIKE SHINYA , OKUDA SEI
IPC分类号： C23C14/34 , B21B3/00 , C22C5/06 , H01L51/50 , H05B33/10 , H05B33/26
CPC分类号： C22C5/06 , C23C14/3414 , H01B1/02 , H01L51/5218 , H05B33/26
摘要： PROBLEM TO BE SOLVED: To provide a silver alloy sputtering target for conductive film formation capable of more controlling arc discharge and splash, and a method for producing the same.SOLUTION: The silver alloy sputtering target has component composition including 0.1-1.5 mass% of Sn, with the remainder comprising Ag and inevitable impurities, wherein an average particle diameter of a crystal grain is 30 μm or more and less than 120 μm, and variation in the particle diameter of the crystal grain is 20% or less of the average particle diameter, and is produced by subjecting a melt-cast ingot to a hot-rolling step, a cooling step, and a machining step in this order, wherein the hot-rolling step includes one or more passes of finish hot rolling under conditions in which the rolling reduction for each pass is 20-50%, the strain rate is 3-15/sec, and the temperature after the pass is 400-650°C, and the cooling step includes rapid cooling at a cooling rate of 200-1,000°C/min.
摘要翻译：要解决的问题：提供一种能够更好地控制电弧放电和飞溅的导电膜形成用银合金溅射靶及其制造方法。解决方案：银合金溅射靶具有0.1-1.5质量％的 Sn，余量为Ag和不可避免的杂质，其中晶粒的平均粒径为30μm以上且小于120μm，晶粒的粒径的变化为平均粒子的20％以下直径，并且通过对熔融铸锭进行热轧步骤，冷却步骤和加工步骤的顺序进行制造，其中，热轧步骤包括一次或多次精轧热轧，其条件是每次通过的压下率为20-50％，应变速率为3-15 /秒，通过后的温度为400-650℃，冷却步骤包括以200-1,000的冷却速度快速冷却 °C / min。

8. 发明专利

JP2013142163A Silver alloy sputtering target for forming conductive film, and method for manufacturing the same 有权
标题翻译：用于形成导电膜的银合金溅射靶及其制造方法
公开(公告)号：JP2013142163A
公开(公告)日：2013-07-22
申请号：JP2012002072
申请日：2012-01-10
申请人： Mitsubishi Materials Corp , 三菱マテリアル株式会社 , Mitsubishi Shindoh Co Ltd , 三菱伸銅株式会社
发明人： KOMIYAMA SHOZO , FUNAKI SHINICHI , KOIKE SHINYA , OKUDA SEI
IPC分类号： C23C14/34 , B21B1/38 , B21B3/00 , C22C5/06 , C22F1/00 , C22F1/14 , H01L51/50 , H05B33/26
CPC分类号： C23C14/3414 , C22C5/06 , H01B1/02 , H01L51/5218
摘要： PROBLEM TO BE SOLVED: To provide a silver alloy sputtering target for forming a conductive film and splash, and a method for manufacturing the same.SOLUTION: The silver alloy sputtering target has component composition consisting of In of 0.1-1.5 mass% and the balance Ag with inevitable impurities, the average grain size of crystalline grains is ≥30 μm and
摘要翻译：要解决的问题：提供一种用于形成导电膜和溅射的银合金溅射靶及其制造方法。解决方案：银合金溅射靶具有由0.1-1.5质量％的In组成的组成组成，余量 Ag具有不可避免的杂质，晶粒的平均晶粒尺寸为≥30μm且<150μm，晶粒的粒径分散度为平均粒径的20％以下。通过对熔融铸锭进行热轧工序，冷却工序和机械加工，制造银合金溅射靶。热轧方法包括一次或多次精轧热轧，每次通过20-50％，应变速率为3-15 /秒，通过后温度为400-650℃。在冷却过程中，锭以200-1,000℃/ min的冷却速度淬火。

9. 发明专利

JP2012011394A Method of manufacturing deformed cross-section bar, and deformed cross-section bar for mounting led chip manufactured by the method 审中-公开
标题翻译：制造变截面棒的方法和用于安装方法制造的LED芯片的变截面横截面
公开(公告)号：JP2012011394A
公开(公告)日：2012-01-19
申请号：JP2010147380
申请日：2010-06-29
申请人： Mitsubishi Shindoh Co Ltd , 三菱伸銅株式会社
发明人： SAKURAI TAKESHI , SUKUMODA SHUNROKU , FUNAKI SHINICHI , OMURA TAKU
IPC分类号： B21B1/08 , B21B27/02
摘要： PROBLEM TO BE SOLVED: To provide a thin deformed cross-section bar of satisfactory dimensional precision, allowing LED-chip on board without depending on the processing such as half-etching or press working while preventing a yield from getting low caused by a material loss and a facility cost from increasing etc.SOLUTION: At least one part of an end edge part of a thick-walled part 7 is press-worked directed width-directionally inwards by each protrusion part 12 protruded from each small-diametric part 4, while forming the thick-walled part 7 by the small-diametric part 4 of a stepped roll 1, in width-directional both end parts of a planar material 5, when rolling the planar material 5 between the stepped roll 1 arrayed alternately with a plurality of large-diametric parts 3 and the plurality of small-diametric parts 4, and a flat roll 2 arranged parallel to the stepped roll 1, a residual thickness is set in a range of 0.3×T to 0.95×T of an edge groove part formed by press-working each end edge part of the thick-walled part, where T denotes a thickness of the thick-walled part, and a thickness of a thin-walled part is made to be 0.20 mm or less and the dimensional precision is made to be ±0.010 mm or less.
摘要翻译：要解决的问题：为了提供令人满意的尺寸精度的薄变形横截面条，允许LED芯片在板上不依赖于诸如半蚀刻或冲压加工的处理，同时防止由于材料损失和设备成本增加等。解决方案：厚壁部分7的端部边缘部分的至少一部分被从每个小的突出部分12突出的每个突出部分12的宽度方向向内的压力加工通过台阶辊1的小直径部分4在平面材料5的宽度方向的两个端部部分中形成厚壁部分7的同时，在平面材料5在阶梯辊1 与多个大直径部件3和多个小直径部件4以及平行于阶梯辊1布置的平辊2交替排列，剩余厚度设定在0.3×T至0.95×T的范围内由凹部形成的边缘槽部将厚壁部的每个端部边缘部分，其中T表示厚壁部分的厚度，薄壁部分的厚度为0.20mm以下，尺寸精度为± 0.010mm以下。版权所有（C）2012，JPO＆INPIT

10. 发明专利

JP2011176260A Method of bonding led chip and leadframe 有权
标题翻译：连接LED芯片和引线框架的方法
公开(公告)号：JP2011176260A
公开(公告)日：2011-09-08
申请号：JP2010135858
申请日：2010-06-15
申请人： Mitsubishi Shindoh Co Ltd , 三菱伸銅株式会社
发明人： SAKURAI TAKESHI , FUNAKI SHINICHI , ISHIKAWA SEIICHI , KUBOTA KENJI
IPC分类号： H01L33/62 , H01L21/52 , H01L23/48
CPC分类号： H01L24/32 , H01L2224/32245 , H01L2924/01322 , H01L2924/12041 , H01L2924/181 , H01L2924/351 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a bonding method that facilitates bonding a leadframe with an LED chip by a high bonding strength at 240 to 300°C using a small quantity of expensive silver. SOLUTION: In the leadframe 8, a nickel plating layer 12, a copper-tin alloy layer 13, a tin plating layer 14, and an Ag 3 Sn alloy layer 16 are formed in sequence on a copper alloy member 11 that is punched into a specified shape, and its uppermost surface is the Ag 3 Sn alloy layer 16. At the joint between the leadframe 8 and the LED chip 1, a gold layer 9 forming the uppermost surface layer of the LED chip 1 is alloyed with part of the Ag 3 Sn alloy layer 16 on the uppermost surface and part of the tin plating layer 14 in the leadframe 7 so as to form a gold-silver-tin alloy layer 15, and the LED chip 1 and the leadframe 7 are joined with each other by the gold-silver-tin alloy layer 15. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种使用少量昂贵的银在240-300℃下通过高粘结强度便于将引线框与LED芯片接合的接合方法。解决方案：在引线框8中，依次形成镍镀层12，铜 - 锡合金层13，锡镀层14和Ag 3 Sn合金层16 被冲压成规定形状的铜合金构件11，其最上表面是Ag 3 Sn合金层16.在引线框架8与LED芯片1之间的接合处，金层9 形成LED芯片1的最上表面层与引线框架7的最上表面和锡镀层14的一部分合金化为Ag 3 SB 3 Sn合金层16，以形成金 - 银 - 锡合金层15和LED芯片1和引线框7通过金 - 银 - 锡合金层15彼此接合。版权所有（C）2011，JPO＆INPIT

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