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    • 2. 发明专利
    • Method of manufacturing heat exchanger
    • 制造热交换器的方法
    • JP2013148318A
    • 2013-08-01
    • JP2012011265
    • 2012-01-23
    • Toyota Motor Corpトヨタ自動車株式会社
    • ADACHI HIRONARISHIBATA YOSHINORIMITANI HIROYUKINAKAMURA HIDEOINADA SHUHEIYONEMOTO YASUKUNI
    • F28F3/08B21D53/04B23K1/00B23K9/235B23K11/00B23K101/14
    • PROBLEM TO BE SOLVED: To provide a method of manufacturing a heat exchanger which not only allows a plurality of flat pipes to be easily assembled into a case but also allows the plurality of flat pipes and the case to be assembled with high accuracy.SOLUTION: This method is for manufacturing an EGR cooler equipped with a flat pipe, which has a midsection with a rectangular cross section consisting of a short side and a long side and an opening at one end and an opening at the other end with rectangular cross sections consisting of short sides and long sides larger than the short side of the midsection and is joined at the short side, and a case, which stores a plurality of laminated flat pipes. This method also includes a flat pipe assembling process in which the flat pipe is assembled to the case so as to be laminated thereon, a jig insertion process in which a jig is inserted into each flat pipe to elastically transform a space in a direction of the short side of each flat pipe thereby closing it up, a temporarily fixing process in which the long sides of the respective flat pipes are temporarily fixed to each other while the space in the direction of the short side of each flat pipe is closed up. Each flat pipe and the case are brazed while bing temporarily fixed.
    • 要解决的问题:提供一种制造热交换器的方法,其不仅允许多个扁平管容易地组装成壳体,而且允许以高精度组装多个扁平管和壳体。解决方案: 该方法用于制造配备有扁平管的EGR冷却器,其具有由短边和长边以及一端的开口构成的矩形截面的中部,另一端的开口具有矩形横截面, 短边和长边比中部短边大,并且在短边接合,并且存储多个层压扁平管的壳体。 该方法还包括扁平管组装工艺,其中扁平管组装到壳体上以便层压在其上;夹具插入过程,其中夹具插入到每个扁平管中,以沿着方向弹性地变换空间 每个扁平管的短边由此封闭,临时固定过程中,各扁平管的长边彼此临时固定,同时每个扁平管的短边方向的空间被封闭。 每个扁平管和外壳都被钎焊,同时临时固定。
    • 3. 发明专利
    • Semiconductor module, and method for manufacturing the same
    • 半导体模块及其制造方法
    • JP2010165743A
    • 2010-07-29
    • JP2009005046
    • 2009-01-13
    • Toyota Motor Corpトヨタ自動車株式会社
    • NAKAMURA HIDEO
    • H01L23/36H01L23/373H01L23/473
    • H01L2224/32225H01L2224/48091H01L2224/48472H01L2224/73265H01L2924/00014H01L2924/00
    • PROBLEM TO BE SOLVED: To provide a semiconductor module and a method for manufacturing the same reducing stress between a module substrate and a cooler while suppressing deterioration of cooling performance. SOLUTION: The semiconductor module 100 includes: a semiconductor element 10; a module substrate 20, wherein the semiconductor element 10 is mounted while metal plates 21 and 22 are arranged on both sides of a ceramic substrate 23; and a cooling member 38 releasing heat generated from the semiconductor element 10. The cooling member 38 includes a substrate 35 connected to the metal plate 22, and a plurality of pin-shaped molded pins 36 protruded from the substrate 35 to the opposite side of the metal plate 22. In each of the cylindrical pins 36, the tip part is closed, while the base part for the substrate 35 is opened. When the substrate 35 of the cooling member 38 is connected to the metal plate 22 of the module substrate 20, the opened parts of the pins 36 are closed by the metal plate 22, and hollow parts 37 are formed inside the pins 36. COPYRIGHT: (C)2010,JPO&INPIT
    • 要解决的问题:提供一种半导体模块和用于在抑制冷却性能劣化的同时在模块基板和冷却器之间制造相同的减小应力的方法。 解决方案:半导体模块100包括:半导体元件10; 模块基板20,其中安装半导体元件10,同时金属板21和22布置在陶瓷基板23的两侧; 以及冷却构件38,其释放从半导体元件10产生的热量。冷却构件38包括连接到金属板22的基板35和从基板35突出到基板35的相对侧的多个销状模制销36 在每个圆柱形销36中,顶端部分被封闭,而基板35的基部被打开。 当冷却构件38的基板35连接到模块基板20的金属板22时,销36的打开部分被金属板22封闭,中空部37形成在销36内。

      版权所有(C)2010,JPO&INPIT

    • 4. 发明专利
    • Manufacturing method and joining apparatus of joined structure
    • 接合结构的制造方法和接合装置
    • JP2009226456A
    • 2009-10-08
    • JP2008076212
    • 2008-03-24
    • Toyota Motor Corpトヨタ自動車株式会社
    • NAKAMURA HIDEOBABA YOICHIROKOMAZAKI MASAHITO
    • B23K1/19B23K1/008B23K101/42B23K103/10H05K3/34
    • PROBLEM TO BE SOLVED: To provide a joining method and joining apparatus of a joined structure having high productivity and combining reduction in voids with securement of rust prevention performance.
      SOLUTION: In brazing steps, reduction of pressure inside a furnace is started just before fusion of a flux (first temperature), and an interval between the joining faces of a workpiece is kept at a negative pressure. Thereafter, by continuously heating under the low pressure, the flux is fused, with the voids in the flux solution left in the negative pressure. Then, in the unfused state of the filler metal (second temperature), it is returned to the atmospheric pressure. As a result, the voids are compressed and removed. Subsequently, by continuously heating under the atmospheric pressure, the filler metal is fused, so that the oxidation film of the workpiece (aluminum plate and the like) is removed from the entire joining faces by the flux and that the joining faces are brazed.
      COPYRIGHT: (C)2010,JPO&INPIT
    • 要解决的问题:提供具有高生产率的接合结构的接合方法和接合装置,并结合减少空隙并确保防锈性能。 解决方案:在钎焊步骤中,在焊剂熔融之前(第一温度)开始炉内的压力降低,并且工件的接合面之间的间隔保持在负压。 此后,通过在低压下连续加热,熔剂熔化,助熔剂溶液中的空隙留下负压。 然后,在填充金属的未熔融状态(第二温度)下,返回到大气压。 结果,空隙被压缩和去除。 随后,通过在大气压下连续加热,使填充金属熔合,从而通过焊剂从工件的整个接合面去除工件的氧化膜(铝板等),并且接合面被钎焊。 版权所有(C)2010,JPO&INPIT
    • 5. 发明专利
    • Cooling device for semiconductor module
    • 用于半导体模块的冷却装置
    • JP2009105166A
    • 2009-05-14
    • JP2007274349
    • 2007-10-22
    • Toyota Motor Corpトヨタ自動車株式会社
    • NAKAMURA HIDEOYAMAMOTO MIGI
    • H01L23/34
    • H01L2224/48091H01L2224/4846H01L2224/48472H01L2224/73265H01L2924/1305H01L2924/13055H01L2924/19107H01L2924/00014H01L2924/00
    • PROBLEM TO BE SOLVED: To solve the following problem in a cooling device of the conventional semiconductor module: a wax material that bonds an insulating substrate of a power semiconductor module and a metallic layer will melt again by heat for melting the wax material that bonds the power semiconductor module, a heat radiator or the like, which causes a bonding end part between the insulating substrate and the metallic layer to peel off. SOLUTION: In the cooling device 1 of the semiconductor module, the other face side of the power semiconductor module 2 where a power semiconductor element 11 is bonded to one face side of the insulating substrate 12 through an upper electrode 13 is bonded to a top plate 32 of a cooler 3. A wax material 22b bonding the insulating substrate 12 with the top plate 32 of the cooler 3 is constituted of a member having a melting temperature lower than a wax material 22a bonding the insulating substrate 12 with the upper electrode 13. COPYRIGHT: (C)2009,JPO&INPIT
    • 解决的问题为了解决传统半导体模块的冷却装置中的以下问题:将功率半导体模块和金属层的绝缘基板接合的蜡材料将再次通过热量熔化蜡材料而熔化 其结合功率半导体模块,散热器等,其使绝缘基板和金属层之间的接合端部分剥离。 解决方案:在半导体模块的冷却装置1中,通过上部电极13将功率半导体元件11的与绝缘基板12的一个面侧接合的功率半导体模块2的另一面侧接合到 绝缘基板12与冷却器3的顶板32接合的蜡材料22b由熔融温度低于将绝缘基板12与上部的绝缘基板12接合的蜡材料22a构成的部件构成 电极13.版权所有(C)2009,JPO&INPIT
    • 7. 发明专利
    • Cooling device of semiconductor module, and manufacturing method therefor
    • 半导体模块的冷却装置及其制造方法
    • JP2008159946A
    • 2008-07-10
    • JP2006348465
    • 2006-12-25
    • Toyota Motor Corpトヨタ自動車株式会社
    • NAKAMURA HIDEOWATANABE TOMOYUKIONO HIROTAKA
    • H01L23/36H01L23/473H01L25/07H01L25/18
    • H01L2224/32225
    • PROBLEM TO BE SOLVED: To solve the problems of the conventional cooling devices of a semiconductor module, having the entire surface on the other side of an insulating substrate bonded with a heat slinger so that warpage deformations are generated due to a large difference of the linear expansion coefficient between the insulating substrate and the heat slinger, and increase in the number of component parts of the cooling device due to a large number of the parts present between a power semiconductor element 111 and a cooler 103. SOLUTION: The cooling device 1 of a semiconductor module comprises a semiconductor module 2 having a power semiconductor element 11 bonded via an electrode plate 13 on one side surface of an insulating substrate 12, and a top plate 32 of a cooling device 3 having an opening part 32 formed and a fitting dent part 32b for fitting in the insulating substrate 12 provided in the peripheral portion of the opening part 32a so that the peripheral portion on the other side surface of the insulating substrate 12 is bonded with the fitting dent part 32b of the top plate 32. COPYRIGHT: (C)2008,JPO&INPIT
    • 要解决的问题为了解决半导体模块的传统冷却装置的问题,其绝缘基板的另一侧的整个表面与散热板接合,从而由于差异较大而产生翘曲变形 的绝缘基板和热抛油环之间的线膨胀系数,并且由于在功率半导体元件111和冷却器103之间存在大量部件而使冷却装置的部件数量增加。解决方案 :半导体模块的冷却装置1包括半导体模块2,其具有通过绝缘基板12的一个侧面上的电极板13接合的功率半导体元件11和具有开口部的冷却装置3的顶板32 32形成,并且配合凹部32b用于安装在设置在开口部32a的周边部分中的绝缘基板12中,使得周边部分 绝缘基板12的另一侧表面与顶板32的嵌合凹部32b接合。(C)2008,JPO&INPIT
    • 8. 发明专利
    • Method for connecting wiring for semiconductor element and semiconductor device
    • 用于连接半导体元件和半导体器件的布线的方法
    • JP2008078240A
    • 2008-04-03
    • JP2006253419
    • 2006-09-19
    • Toyota Motor Corpトヨタ自動車株式会社
    • NAKAMURA HIDEOSHIRAI MIKIO
    • H01L21/603
    • H01L24/33H01L2924/1305H01L2924/13055H01L2924/13091H01L2924/00
    • PROBLEM TO BE SOLVED: To solve the problem that an ultrasonic energy applied to a semiconductor element is increased and there is a fear that the semiconductor element is damaged when a wire formed in a tape shape is ultrasonic-bonded in a conventional semiconductor device. SOLUTION: A method for connecting a wiring for the semiconductor element 10 connects the wiring 30 at an element-electrode terminal formed on the surface of the semiconductor element 10. In the method, the wiring 30 is formed in a band shape and first metallic materials 31 and 14 melted at a temperature lower than the heat-resistant temperature of the semiconductor element 10 are fitted on a connecting surface with the element-electrode terminal for the wiring 30 and the element-electrode terminal in films; the element-electrode terminal for the semiconductor element 10 and the wiring 30 are connected in a surface by fusing the first metallic material 31 fitted to the connecting surface with the element-electrode terminal for the wiring 10 in the film and the first metallic material 14 fitted to the element-electrode terminal in the film by heating the connecting surface with the element-electrode terminal for the wiring 10 and the element-electrode terminal under the state in which both the connecting surface and the element-electrode terminal are abutted. COPYRIGHT: (C)2008,JPO&INPIT
    • 要解决的问题为了解决在半导体元件中施加的超声波能量增加的问题,并且当将形成为带状的线材在常规半导体中超声波接合时,担心半导体元件被损坏 设备。 解决方案:用于连接半导体元件10的布线的方法在形成在半导体元件10的表面上的元件电极端子处连接布线30.在该方法中,布线30形成为带状, 在低于半导体元件10的耐热温度的温度下熔化的第一金属材料31和14与用于布线30的元件电极端子和膜中的元件电极端子的连接表面上嵌合; 用于半导体元件10的元件电极端子和布线30通过将装配到连接表面的第一金属材料31与膜中的布线10的元件电极端子熔合在一起而将第一金属材料14 在连接面和元件电极端子相接的状态下,通过加热用于布线10的元件 - 电极端子和元件 - 电极端子的连接表面,将膜连接到元件 - 电极端子。 版权所有(C)2008,JPO&INPIT
    • 10. 发明专利
    • Laser joint quality inspecting device
    • 激光焊接质量检测装置
    • JP2007098442A
    • 2007-04-19
    • JP2005292648
    • 2005-10-05
    • Toyota Motor Corpトヨタ自動車株式会社
    • OCHIAI MASARUNAKAMURA HIDEOTAKEUCHI YASUTAKA
    • B23K26/00B23K26/20
    • PROBLEM TO BE SOLVED: To provide a laser joint quality inspecting device where the erroneous judgement of joint quality is suppressed, and quality discrimination can be correctly performed. SOLUTION: The laser joint quality inspecting device 1 for inspecting the quality of the joint by laser irradiation between a weldment 3 and the object 2 to be welded comprises: a reflected light intensity calculating means where reflected light from the joint is detected, and the time-integrated intensity of the reflected light is calculated; a plasma light intensity calculating means where plasma light from the joint is detected, and the time-integrated intensity of the plasma light is calculated; an infrared light intensity calculating means where infrared light from the joint is detected, and the time-integrated intensity of the infrared light is calculated; and a calculating apparatus 16 as a joint quality discriminating means where discriminatory analysis is performed using the time-integrated intensities of the reflected light, plasma light and infrared light as variables, and the quality discrimination of the weld quality in the joint from which each time-integrated intensity is detected is performed based on the result of the discriminatory analysis. COPYRIGHT: (C)2007,JPO&INPIT
    • 要解决的问题:提供抑制关节质量的错误判断的激光接头质量检查装置,并且可以正确地进行质量鉴别。 < P>解决方案:用于通过焊接件3和被焊接物体2之间的激光照射检查接头质量的激光接头质量检查装置1包括:检测来自接头的反射光的反射光强度计算装置, 并计算反射光的时间积分强度; 检测来自接头的等离子体光的等离子体光强度计算装置,并计算等离子体光的时间积分强度; 检测来自接头的红外光的红外光强度计算装置,并计算红外光的时间积分强度; 以及作为联合质量鉴别装置的计算装置16,其中使用反射光,等离子体光和红外光的时间积分强度作为变量进行鉴别分析,以及每次的接头中焊缝质量的质量鉴别 基于歧视性分析的结果,检测出积分强度。 版权所有(C)2007,JPO&INPIT