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    • 7. 发明专利
    • Semiconductor device and its manufacturing method
    • 半导体器件及其制造方法
    • JP2006210519A
    • 2006-08-10
    • JP2005018578
    • 2005-01-26
    • Fuji Electric Holdings Co Ltd富士電機ホールディングス株式会社
    • IKEDA YOSHINARI
    • H01L29/78H01L29/739
    • H01L2224/34H01L2224/40095H01L2224/48091H01L2224/77272H01L2224/84801H01L2924/00014H01L2924/1305H01L2924/13055H01L2924/00H01L2224/37099H01L2924/00012
    • PROBLEM TO BE SOLVED: To provide a reliable semiconductor device by covering the entire top face of a main electrode with a uniform solder solid film layer to reduce thermal resistance at an interconnection joint consisting of solder and thereby improving the heat dissipation efficiency. SOLUTION: An emitter electrode 2 is divided by a gate liner 4. To protect the gate liner 4, a polyimide film 7 is formed on the surface of the gate liner 4. Then, the polyimide film 7 is coated with a metal foil 8 formed of Cu, Au, etc. which has a good solder wettability, and then solder is placed on top of the metal foil 8, and a conductive plate 6 is placed on the solder. When the solder is melted in a reflow furnace, the molten solder is allowed to flow and is extended to adjacent molten solders via the metal foil 7, thus forming the uniform solder solid film layer 9, with the molten solder never divided by the polyimide film 7. Then, the uniform solder solid film layer 9 is solidified to join the conductive plate. Consequently, the thermal resistance at the interconnection joint consisting of solder is reduced, which results in the improvement in heat dissipation efficiency and eventually leads to a reliable semiconductor device. COPYRIGHT: (C)2006,JPO&NCIPI
    • 要解决的问题:通过用均匀的焊料固体膜层覆盖主电极的整个顶面来提供可靠的半导体器件,以降低由焊料构成的互连接头处的热阻,从而提高散热效率。 解决方案:发射电极2由栅极衬垫4分隔。为了保护栅极衬垫4,在栅极衬垫4的表面上形成聚酰亚胺膜7.然后,聚酰亚胺膜7涂覆有金属 由Cu,Au等形成的具有良好焊料润湿性的箔8,然后将焊料置于金属箔8的顶部,并将导电板6放置在焊料上。 当焊料在回流炉中熔化时,允许熔融焊料流动并通过金属箔7延伸到相邻的熔融焊料,从而形成均匀的焊料固体膜层9,熔融焊料从未被聚酰亚胺膜分割 然后,将均匀的焊料固体膜层9固化,以接合导电板。 因此,由焊料组成的互连接头处的热阻降低,导致散热效率的提高,最终导致可靠的半导体器件。 版权所有(C)2006,JPO&NCIPI