专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

71. 发明专利

JP3859839B2 Index-guided semiconductor laser device 失效
公开(公告)号：JP3859839B2
公开(公告)日：2006-12-20
申请号：JP26656697
申请日：1997-09-30
申请人：富士フイルムホールディングス株式会社
发明人：敏明福永
IPC分类号： H01S5/00 , H01S5/22 , H01S5/20 , H01S5/223 , H01S5/323
CPC分类号： H01S5/22 , H01S5/20 , H01S5/2004 , H01S5/204 , H01S5/222 , H01S5/2231 , H01S5/32308 , H01S5/32333 , H01S5/3235 , H01S5/32391

72. 发明专利

JP2006228941A Semiconductor laser 审中-公开
标题翻译：半导体激光器
公开(公告)号：JP2006228941A
公开(公告)日：2006-08-31
申请号：JP2005040462
申请日：2005-02-17
申请人： Sony Corp , ソニー株式会社
发明人： AZUMA SHINICHI , UCHIDA SHIRO
IPC分类号： H01S5/22
CPC分类号： H01S5/22 , H01S5/0655 , H01S5/2219 , H01S5/222 , H01S5/32325
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor laser where occurrence of a higher mode kink is suppressed and high output is realized.
SOLUTION: A lower clad layer 2, an active layer 4, an upper clad layer 6, and a contact layer 7 are laminated in this order. Upper layers of the contact layer 7 and the upper clad layer 6 have a ridge (a) formed in a stripe ridge structure of a convex bar. A part from an upper face of the upper clad layer 6 at the side of the ridge (a) to the side wall of the ridge (a) is covered with a built-in film b1. The built-in film b1 has a laminated structure laminating a first low refractive index layer 11, an optical absorption layer 12 which absorbs a laser beam of an oscillation wavelength, a second low refractive index layer 13, and an antioxidant layer 14 which serves as an optical absorption layer.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供抑制更高模式扭结的发生并实现高输出的半导体激光器。解决方案：下覆盖层2，有源层4，上覆盖层6和接触层7依次层叠。接触层7和上覆层6的上层具有形成为凸条的条纹脊结构的脊（a）。在脊（a）侧的上包层6的上表面与脊（a）的侧壁的一部分被内置膜b1覆盖。内置薄膜b1具有叠层第一低折射率层11，吸收振荡波长的激光的光吸收层12，第二低折射率层13和抗氧化层14的叠层结构，其作为光吸收层。版权所有（C）2006，JPO＆NCIPI

73. 发明专利

JP2005051124A Plane light emitting semiconductor element 审中-公开
标题翻译：平面发光半导体元件
公开(公告)号：JP2005051124A
公开(公告)日：2005-02-24
申请号：JP2003283055
申请日：2003-07-30
申请人： Sumitomo Electric Ind Ltd , 住友電気工業株式会社
发明人： KATSUYAMA TSUKURU , HASHIMOTO JUNICHI
IPC分类号： H01S5/00 , H01S5/042 , H01S5/183 , H01S5/20 , H01S5/22 , H01S5/323
CPC分类号： H01S5/18308 , H01S5/2209 , H01S5/222 , H01S5/3211 , H01S5/32366
摘要： PROBLEM TO BE SOLVED: To provide a plane light emitting semiconductor element which can realize good current confinement. SOLUTION: A first conductive semiconductor region 3 is provided on a GaAs semiconductor region. An active layer 5 is provided on the first conductive semiconductor region 3. In a second conductive semiconductor layer 7, a first DBR 2 provided on the active layer 5 has first and second semiconductor DBR layers 2a and 2b alternately arranged therein. A second DBR 15 has third and fourth DBR semiconductor layers 15a and 15b alternately arranged therein. The first conductive semiconductor region 3, the active layer 5, and the second conductive semiconductor layer 7 are provided between the first and the second DBR semiconductors 2 and 15. A current block semiconductor region 9 is provided on the side surface 3a of the first conductive semiconductor region 3 on the side surface 5a of the active layer 5, and on the side surface 9a of the second conductive semiconductor layer 9. The active layer 5 is made of a group III-V based compound semiconductor containing at least nitrogen element as a group V. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供能够实现良好的电流限制的平面发光半导体元件。解决方案：在GaAs半导体区域上设置第一导电半导体区域3。有源层5设置在第一导电半导体区域3上。在第二导电半导体层7中，设置在有源层5上的第一DBR 2具有交替布置在其中的第一和第二半导体DBR层2a和2b。第二DBR 15具有交替布置在其中的第三和第四DBR半导体层15a和15b。第一导电半导体区域3，有源层5和第二导电半导体层7设置在第一和第二DBR半导体2和15之间。电流块半导体区域9设置在第一导电半导体区域3的侧表面3a上。半导体区域3在有源层5的侧表面5a上以及第二导电半导体层9的侧表面9a上。有源层5由至少含有氮元素的III-V族化合物半导体制成，第五版。版权所有（C）2005，JPO＆NCIPI

74. 发明专利

JP3576560B2 Semiconductor laser element 失效
公开(公告)号：JP3576560B2
公开(公告)日：2004-10-13
申请号：JP51310396
申请日：1995-10-16
申请人：三井化学株式会社
发明人：由美内藤 , 敦大久保 , 清文室 , 義和山田 , 岡田　　知 , 穀藤本
IPC分类号： H01S5/20 , H01S5/22 , H01S5/223 , H01S5/343
CPC分类号： B82Y20/00 , H01S5/204 , H01S5/222 , H01S5/2231 , H01S5/2238 , H01S5/3432

75. 发明专利

JP2004172199A Semiconductor laser device and its manufacturing method 有权
公开(公告)号：JP2004172199A
公开(公告)日：2004-06-17
申请号：JP2002333509
申请日：2002-11-18
申请人： Sharp Corp , シャープ株式会社
发明人： UEDA SADAAKI , MIYAZAKI KEISUKE , WADA KAZUHIKO , TATSUMI MASAKI , MORIMOTO TAIJI
IPC分类号： H01S5/22 , H01S5/00 , H01S5/02 , H01S5/223 , H01S5/40
CPC分类号： H01S5/2231 , H01S5/0655 , H01S5/222 , H01S5/4031 , H01S5/4087 , H01S2302/00
摘要： PROBLEM TO BE SOLVED: To form stably and easily without loosing current confining effect and without exposing a second cladding layer.
SOLUTION: A semiconductor layer 52 different with refractive index from that of p-type second cladding layers 37, 46 is formed on the ridges 50, 51 of two sets of semiconductor lasers 39, 48 by a thin film having the thickness of not more than 2μm (in the degree of 0.5μm). By this method, the semiconductor layer 52 on the ridges 50, 51 is substantially flattened and the easy removal of the same by etching is permitted. As a result, the exposure of the p-type cladding layers 37, 46 of the ridges 50, 51 due to deep etching is prevented and the confinement of light into the p-type second cladding layers 37, 46 can be effected stably. A dielectric film 53 is formed on the semiconductor layer 52 to reinforce current constriction function, lost by thinning the semiconductor layer 52. Thus, the current confinement is effectively effected. Accordingly, the semiconductor laser device having two sets of semiconductor lasers can stably and easily be formed.
COPYRIGHT: (C)2004,JPO

76. 发明专利

JPS61127192A Surface radiation light emitter 失效
标题翻译：表面辐射光发射器
公开(公告)号：JPS61127192A
公开(公告)日：1986-06-14
申请号：JP24175285
申请日：1985-10-30
申请人： Northern Telecom Ltd
发明人： MIKERISU NIRUSU SUBIRANZU
IPC分类号： H01L33/00 , H01L33/24 , H01S5/00 , H01S5/183
CPC分类号： H01S5/18308 , H01L33/0025 , H01L33/0062 , H01L33/24 , H01S5/222 , H01S2301/163

77. 发明专利

JPS59217326A Formation of semiconductor device 失效
标题翻译：形成半导体器件
公开(公告)号：JPS59217326A
公开(公告)日：1984-12-07
申请号：JP9298983
申请日：1983-05-25
申请人： Canon Inc
发明人： MIYAZAWA SEIICHI , NOJIRI HIDEAKI , HAKAMATA ISAO , HAZEMOTO YOSHIKI
IPC分类号： H01L21/208 , H01S5/00 , H01S5/22 , H01S5/223 , H01S5/227 , H01S5/323 , H01S3/18
CPC分类号： H01S5/2232 , H01S5/2205 , H01S5/2209 , H01S5/222 , H01S5/2234 , H01S5/2235 , H01S5/2237 , H01S5/227 , H01S5/2272 , H01S5/2275 , H01S5/32308
摘要： PURPOSE:To obtain a semiconductor device having a superative current strangulation effect by a method wherein the crystalline structure of a substrate or a semiconductor layer on a substrate is partially changed and a semiconductor layer having a structure in accordance with the previous crystalline structure is furthermore grown thereon. CONSTITUTION:A GaAs layer 12 including no impurity is grown in the form of single crystal on a GaAs substrate 11. Into the thus-grown layer, a Ga or As of a high concentration is implanted by means of an ion implantation. As a result, a part of the crystalline structure is changed and the single crystal portion remains in a strip shape, thus forming a high resistance layer 22. Then, an InGaP layer 13 is grown on the GaAs layer 12 including the high resistance layer 22. A part 33 within the layer 13, which is grown on the single crystal portion of the GaAs layer 12, is transformed into a single crystal. While, a part 23 grown on the high resistance layer 22 becomes amorphous or polycrystalline. Subsequently, a GaAs active layer 14 and InGaP layer 15 are laminated on the InGaP layer 13 and finally electrodes 16 and 17 are formed, whereby a semiconductor laser is formed. The stripe region strangulated between high resistance regions 20 is formed without expanding proximate to the substrate and hence the passage of a current 18 flowing between the electrodes is restricted to the strangulated region. The thus-formed semiconductor laser is therefore capable of oscillating at a low current density.
摘要翻译：目的：通过一种方法获得具有超电流扼制效应的半导体器件，其中衬底上的晶体结构或衬底上的半导体层被部分地改变，并且进一步生长具有根据之前的结晶结构的结构的半导体层在其上。构成：在GaAs衬底11上以单晶的形式生长不含杂质的GaAs层12.在这样生长的层中，通过离子注入注入高浓度的Ga或As。结果，晶体结构的一部分发生变化，单晶部分保持条状，从而形成高电阻层22.然后，在包括高电阻层22的GaAs层12上生长InGaP层13 在层13中生长在GaAs层12的单晶部分上的部分33被转变为单晶。而在高电阻层22上生长的部分23变成无定形或多晶。随后，在InGaP层13上层叠GaAs活性层14和InGaP层15，最终形成电极16和17，形成半导体激光。在高电阻区域20之间被扼制的条纹区域形成为没有靠近基板扩张，因此在电极之间流动的电流18的通过被限制到被扼杀的区域。因此，这样形成的半导体激光器能够以低电流密度振荡。

78. 发明专利

JPS59208798A Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：JPS59208798A
公开(公告)日：1984-11-27
申请号：JP8391983
申请日：1983-05-12
申请人： Canon Inc
发明人： NOJIRI HIDEAKI , MIYAZAWA SEIICHI , HAKAMATA ISAO , HAZEMOTO YOSHIKI
IPC分类号： H01S5/00 , H01S5/22 , H01S5/223 , H01S5/227 , H01S5/323
CPC分类号： H01S5/227 , H01S5/2205 , H01S5/2209 , H01S5/222 , H01S5/2232 , H01S5/2237 , H01S5/2272 , H01S5/2275 , H01S5/32308
摘要： PURPOSE:To lower the oscillating threshold value current density and to facilitate the manufacture in an embedded semiconductor device by a method wherein embedded layers are formed of an amorphous semiconductor. CONSTITUTION:In the semiconductor device shown in the diagram, semiconductor layers 11-15 in a mesa structure consisting of a plural number of GaAs- GaAlAs system-layers involving an active layer 12 have been embedded in amorphous Si layers 18. In this condition, the layers 18 have a lower refractive index and a higher-resistance property than the layers 11-15. For that reason, the spreading of current, which flows through this semiconductor device, is limited by the layers 18 and the current almost flows through the layers 11-15, while the light to be oscillated is shut in the layer 12 by the difference during the refractive index of the layer 12 and that of the layers 18. The semiconductor device having this constitution like this efficiently has been enabled to shut light and current in the resonator width direction by the layers 18 and to start the oscillation at a lower current density. Furthermore, the device can be easily manufactured because the layers 18 have been formed of amorphous Si.
摘要翻译：目的：降低振荡阈值电流密度，并通过其中嵌入层由非晶半导体形成的方法在嵌入式半导体器件中制造。构成：在图中所示的半导体器件中，由包含有源层12的多个GaAs-GaAlAs系层构成的台面结构中的半导体层11-15已经嵌入非晶硅层18中。在这种情况下，层18具有比层11-15更低的折射率和更高的电阻特性。因此，流过该半导体器件的电流的扩展受到层18的限制，并且电流几乎流过层11-15，而待振荡的光在层12中被关闭在层12的折射率和层18的折射率。具有这种结构的半导体器件能够有效地通过层18遮断谐振器宽度方向上的光和电流，并以较低的电流密度开始振荡。此外，由于层18已经由非晶Si形成，所以可以容易地制造该器件。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式