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1. 发明专利

JPS5911293A Heat-mode laser beam recording method 失效
标题翻译：热模激光束记录方法
公开(公告)号：JPS5911293A
公开(公告)日：1984-01-20
申请号：JP9019583
申请日：1983-05-23
申请人： Canon Inc
发明人： KASAI MASANAO , HANATACHI HITOSHI , HAZEMOTO YOSHIKI , KITAMURA TAKASHI , ENDOU KIYONOBU
IPC分类号： B41M5/26 , G11B7/243
CPC分类号： G11B7/243 , G11B7/00451 , G11B2007/24314 , G11B2007/24316 , G11B2007/24324
摘要： PURPOSE:To perform heat-mode laser beam recording of information at a high speed with a high resolution, by a method wherein a recording layer formed mainly of a crystalline chalcogen is irradiated with a laser beam to remove a part of a chalcogen layer by evaporation. CONSTITUTION:The recording layer 10 consisting mainly of a crystalline chalcogen (a crystalline substance comprising at least one of S, Se and Te as a main constituent and not exhibiting any glass transition point, e.g., a crystalline elementary chalcogen of Se, Te or the like, a crystalline binary chalcogen compound of As-S system, Bi-Se system, Ni-S system or the like, or a crystalline ternary chalcogen compound of As-S-Te system or the like) and provided on a base 9 is irradiated with a laser beam 11 to remove a part of the crystalline chalcogen layer by evaporation, thereby performing heat-mode laser beam recording.
摘要翻译：目的：为了以高分辨率高速度进行信息的热模式激光束记录，通过用激光束照射主要由结晶硫属元素形成的记录层的方法，通过蒸发除去一部分硫属元素层。构成：主要由结晶硫属元素（包含S，Se和Te中的至少一种作为主要成分并且不显示任何玻璃化转变点的结晶物质，例如Se，Te的结晶元素硫族元素或如As-S系统的结晶二元硫属化合物，Bi-Se体系，Ni-S系等，或As-S-Te体系的结晶三元硫属化合物等），并且设置在基体9上用激光束11照射以通过蒸发除去一部分结晶硫族元素层，从而进行热模式激光束记录。

2. 发明专利

JPS59217326A Formation of semiconductor device 失效
标题翻译：形成半导体器件
公开(公告)号：JPS59217326A
公开(公告)日：1984-12-07
申请号：JP9298983
申请日：1983-05-25
申请人： Canon Inc
发明人： MIYAZAWA SEIICHI , NOJIRI HIDEAKI , HAKAMATA ISAO , HAZEMOTO YOSHIKI
IPC分类号： H01L21/208 , H01S5/00 , H01S5/22 , H01S5/223 , H01S5/227 , H01S5/323 , H01S3/18
CPC分类号： H01S5/2232 , H01S5/2205 , H01S5/2209 , H01S5/222 , H01S5/2234 , H01S5/2235 , H01S5/2237 , H01S5/227 , H01S5/2272 , H01S5/2275 , H01S5/32308
摘要： PURPOSE:To obtain a semiconductor device having a superative current strangulation effect by a method wherein the crystalline structure of a substrate or a semiconductor layer on a substrate is partially changed and a semiconductor layer having a structure in accordance with the previous crystalline structure is furthermore grown thereon. CONSTITUTION:A GaAs layer 12 including no impurity is grown in the form of single crystal on a GaAs substrate 11. Into the thus-grown layer, a Ga or As of a high concentration is implanted by means of an ion implantation. As a result, a part of the crystalline structure is changed and the single crystal portion remains in a strip shape, thus forming a high resistance layer 22. Then, an InGaP layer 13 is grown on the GaAs layer 12 including the high resistance layer 22. A part 33 within the layer 13, which is grown on the single crystal portion of the GaAs layer 12, is transformed into a single crystal. While, a part 23 grown on the high resistance layer 22 becomes amorphous or polycrystalline. Subsequently, a GaAs active layer 14 and InGaP layer 15 are laminated on the InGaP layer 13 and finally electrodes 16 and 17 are formed, whereby a semiconductor laser is formed. The stripe region strangulated between high resistance regions 20 is formed without expanding proximate to the substrate and hence the passage of a current 18 flowing between the electrodes is restricted to the strangulated region. The thus-formed semiconductor laser is therefore capable of oscillating at a low current density.
摘要翻译：目的：通过一种方法获得具有超电流扼制效应的半导体器件，其中衬底上的晶体结构或衬底上的半导体层被部分地改变，并且进一步生长具有根据之前的结晶结构的结构的半导体层在其上。构成：在GaAs衬底11上以单晶的形式生长不含杂质的GaAs层12.在这样生长的层中，通过离子注入注入高浓度的Ga或As。结果，晶体结构的一部分发生变化，单晶部分保持条状，从而形成高电阻层22.然后，在包括高电阻层22的GaAs层12上生长InGaP层13 在层13中生长在GaAs层12的单晶部分上的部分33被转变为单晶。而在高电阻层22上生长的部分23变成无定形或多晶。随后，在InGaP层13上层叠GaAs活性层14和InGaP层15，最终形成电极16和17，形成半导体激光。在高电阻区域20之间被扼制的条纹区域形成为没有靠近基板扩张，因此在电极之间流动的电流18的通过被限制到被扼杀的区域。因此，这样形成的半导体激光器能够以低电流密度振荡。

3. 发明专利

JPS59208798A Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：JPS59208798A
公开(公告)日：1984-11-27
申请号：JP8391983
申请日：1983-05-12
申请人： Canon Inc
发明人： NOJIRI HIDEAKI , MIYAZAWA SEIICHI , HAKAMATA ISAO , HAZEMOTO YOSHIKI
IPC分类号： H01S5/00 , H01S5/22 , H01S5/223 , H01S5/227 , H01S5/323
CPC分类号： H01S5/227 , H01S5/2205 , H01S5/2209 , H01S5/222 , H01S5/2232 , H01S5/2237 , H01S5/2272 , H01S5/2275 , H01S5/32308
摘要： PURPOSE:To lower the oscillating threshold value current density and to facilitate the manufacture in an embedded semiconductor device by a method wherein embedded layers are formed of an amorphous semiconductor. CONSTITUTION:In the semiconductor device shown in the diagram, semiconductor layers 11-15 in a mesa structure consisting of a plural number of GaAs- GaAlAs system-layers involving an active layer 12 have been embedded in amorphous Si layers 18. In this condition, the layers 18 have a lower refractive index and a higher-resistance property than the layers 11-15. For that reason, the spreading of current, which flows through this semiconductor device, is limited by the layers 18 and the current almost flows through the layers 11-15, while the light to be oscillated is shut in the layer 12 by the difference during the refractive index of the layer 12 and that of the layers 18. The semiconductor device having this constitution like this efficiently has been enabled to shut light and current in the resonator width direction by the layers 18 and to start the oscillation at a lower current density. Furthermore, the device can be easily manufactured because the layers 18 have been formed of amorphous Si.
摘要翻译：目的：降低振荡阈值电流密度，并通过其中嵌入层由非晶半导体形成的方法在嵌入式半导体器件中制造。构成：在图中所示的半导体器件中，由包含有源层12的多个GaAs-GaAlAs系层构成的台面结构中的半导体层11-15已经嵌入非晶硅层18中。在这种情况下，层18具有比层11-15更低的折射率和更高的电阻特性。因此，流过该半导体器件的电流的扩展受到层18的限制，并且电流几乎流过层11-15，而待振荡的光在层12中被关闭在层12的折射率和层18的折射率。具有这种结构的半导体器件能够有效地通过层18遮断谐振器宽度方向上的光和电流，并以较低的电流密度开始振荡。此外，由于层18已经由非晶Si形成，所以可以容易地制造该器件。

4. 发明专利

JPS59204292A Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：JPS59204292A
公开(公告)日：1984-11-19
申请号：JP7991183
申请日：1983-05-06
申请人： Canon Inc
发明人： HAKAMATA ISAO , NOJIRI HIDEAKI , MIYAZAWA SEIICHI , HAZEMOTO YOSHIKI
IPC分类号： H01L27/15 , H01S5/024 , H01S5/042 , H01S5/06 , H01S5/40
CPC分类号： H01S5/02415 , H01S5/0261 , H01S5/0612 , H01S5/4025 , H01S5/4031
摘要： PURPOSE:To obtain lights of a plurality of wavelengths by independently controlling temperatures of a plurality of semconductor light emitting elements on the same substrate. CONSTITUTION:The light emitting part A consists of array form semiconductor elements on the substrate 15, and individual lasers have a hetero structure. The heating part B independently provided to each laser consists of an insulation member 7, a heat generating member 8, an electrode 9, and a protection film 10. The temperature adjusting part C is composed of a supporting member 11, a temperature sensitive element 12 detecting the temperature of the member 11, a thermoelectric element 13 heating and cooling the member 11 based on the information of the element 12, and a heat dissipating fin 14 diffusing the heat from the element 13 to the atmosphere. The oscillation wavelength of the semiconductor laser can be independently controlled by changing the current impressed on respective heat generating member 8.
摘要翻译：目的：通过独立地控制同一基板上的多个半导体发光元件的温度来获得多个波长的光。构成：发光部A由基板15上的阵列形状的半导体元件构成，各激光器具有异质结构。独立地提供给每个激光器的加热部分B由绝缘构件7，发热构件8，电极9和保护膜10组成。温度调节部分C由支撑构件11，温度敏感元件12 检测构件11的温度，基于元件12的信息加热和冷却构件11的热电元件13以及将热量从元件13扩散到大气中的散热翅片14。半导体激光器的振荡波长可以通过改变施加在各个发热元件8上的电流来独立地控制。

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