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1. 发明专利

JPS59204292A Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：JPS59204292A
公开(公告)日：1984-11-19
申请号：JP7991183
申请日：1983-05-06
申请人： Canon Inc
发明人： HAKAMATA ISAO , NOJIRI HIDEAKI , MIYAZAWA SEIICHI , HAZEMOTO YOSHIKI
IPC分类号： H01L27/15 , H01S5/024 , H01S5/042 , H01S5/06 , H01S5/40
CPC分类号： H01S5/02415 , H01S5/0261 , H01S5/0612 , H01S5/4025 , H01S5/4031
摘要： PURPOSE:To obtain lights of a plurality of wavelengths by independently controlling temperatures of a plurality of semconductor light emitting elements on the same substrate. CONSTITUTION:The light emitting part A consists of array form semiconductor elements on the substrate 15, and individual lasers have a hetero structure. The heating part B independently provided to each laser consists of an insulation member 7, a heat generating member 8, an electrode 9, and a protection film 10. The temperature adjusting part C is composed of a supporting member 11, a temperature sensitive element 12 detecting the temperature of the member 11, a thermoelectric element 13 heating and cooling the member 11 based on the information of the element 12, and a heat dissipating fin 14 diffusing the heat from the element 13 to the atmosphere. The oscillation wavelength of the semiconductor laser can be independently controlled by changing the current impressed on respective heat generating member 8.
摘要翻译：目的：通过独立地控制同一基板上的多个半导体发光元件的温度来获得多个波长的光。构成：发光部A由基板15上的阵列形状的半导体元件构成，各激光器具有异质结构。独立地提供给每个激光器的加热部分B由绝缘构件7，发热构件8，电极9和保护膜10组成。温度调节部分C由支撑构件11，温度敏感元件12 检测构件11的温度，基于元件12的信息加热和冷却构件11的热电元件13以及将热量从元件13扩散到大气中的散热翅片14。半导体激光器的振荡波长可以通过改变施加在各个发热元件8上的电流来独立地控制。

2. 发明专利

JPS59102890A Method for growing thin film crystal 失效
标题翻译：生长薄膜晶体的方法
公开(公告)号：JPS59102890A
公开(公告)日：1984-06-14
申请号：JP20892482
申请日：1982-11-29
申请人： Canon Inc
发明人： YOSHIOKA SEISHIROU , MIYAZAWA SEIICHI
IPC分类号： C30B1/08 , C30B1/02 , C30B13/00 , C30B19/00 , H01L21/20 , H01L21/203
CPC分类号： C30B13/00 , C30B29/60
摘要： PURPOSE:To convert the thin film on a substrate to a single crystal in high efficiency, by forming a thin film having constricted form on a substrate, and heating the film gradually from one end in high vacuum. CONSTITUTION:A mask is placed on a substrate 101 in high vacuum; e.g. Si is deposited to the substrate by evaporation. A thin film 102 having a partly constricted form is formed by this process. The thin film is heated successively from sharp tip 304 of the constricted form to generate the initial crystal nucleus at the sharp tip 304. The nucleus is grown in the region 305, the crystal having specific orientation is selected in the regions 306 and 307, and single crystal film having large area is formed in the region 308. The thin film on the substrate can be converted to a single crystal in high efficiency.
摘要翻译：目的：通过在衬底上形成具有收缩形状的薄膜，并以高真空从一端逐渐加热，将基板上的薄膜高效率地转换成单晶。构成：在高真空下将掩模放置在基板101上; 例如通过蒸发将Si沉积到基底上。通过该方法形成具有部分收缩形式的薄膜102。从紧缩形式的锋利尖端304依次加热薄膜，以在尖端304处产生初始晶核。核在区域305中生长，在区域306和307中选择具有特定取向的晶体，以及在区域308中形成具有大面积的单晶膜。可以高效率地将基板上的薄膜转化为单晶。

3. 发明专利

JP2003046199A Method for manufacturing ii-vi group device using porous film and its structure 审中-公开
标题翻译：使用多孔膜制造II-VI组装置的方法及其结构
公开(公告)号：JP2003046199A
公开(公告)日：2003-02-14
申请号：JP2001228214
申请日：2001-07-27
申请人： Canon Inc , キヤノン株式会社
发明人： MIYAZAWA SEIICHI , OKUDA MASAHIRO , EZAKI MIGAKU
IPC分类号： H01L21/205 , H01L33/06 , H01L33/28 , H01L33/30 , H01S5/327 , H01L33/00
摘要： PROBLEM TO BE SOLVED: To provide a method for forming a II-VI group semiconductor material that has high quality and no defect even if a substrate and a semiconductor material formed thereon have lattice constants different to each other, and to provide its structure.
SOLUTION: This device is provided with a porous layer pinched by a semiconductor substrate and a first semiconductor film and a second semiconductor film formed on the first semiconductor film, and the second semiconductor film contains a II-VI group compound semiconductor.
COPYRIGHT: (C)2003,JPO
摘要翻译：要解决的问题：即使在其上形成的基板和半导体材料之间具有彼此不同的晶格常数，并且提供其结构，提供了一种形成具有高质量且没有缺陷的II-VI族半导体材料的方法。解决方案：该器件设置有由半导体衬底夹持的多孔层和形成在第一半导体膜上的第一半导体膜和第二半导体膜，第二半导体膜含有II-VI族化合物半导体。

4. 发明专利

JPS61121380A Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：JPS61121380A
公开(公告)日：1986-06-09
申请号：JP24228984
申请日：1984-11-19
申请人： Canon Inc
发明人： HARA TOSHITAMI , SHIMIZU AKIRA , SEKIGUCHI YOSHINOBU , MIYAZAWA SEIICHI , NOJIRI HIDEAKI , HAKAMATA ISAO
IPC分类号： H01S5/00 , H01S5/042 , H01S5/06
摘要： PURPOSE: To eliminate an error on positioning and the limitation of the density of integration by providing a control means, through which the directions of projection of beams from a plurality of semiconductor lasers are canged and made different mutually, in a semiconductor device in which the semiconductor lasers are formed in a monolithic manner.
CONSTITUTION: Pairing electrtodes 11a and 11b, 12a and 12b, 13a and 13b are each formed on both sides of three layers, 11, 12, 13 in a monolithic manner whjle serverally holding the lasers 11, 12, 13. Injection currents to respective electrode pair (11a, 11b, a12, 12b, 13a and 13b) are varied properly, thus deflecting the directions of projdction of beams from array lasers (11, 12 and 13) only by an angle θ. Accordingly, laser beams can be arranged esily in parallel from a large number of points.
COPYRIGHT: (C)1986,JPO&Japio
摘要翻译：目的：通过提供控制装置来消除定位误差和集成密度的限制，通过该控制装置，在半导体装置中，来自多个半导体激光器的光束的投影方向被固化和相互不同，半导体激光器以单片方式形成。构成：配对电极11a和11b，12a和12b，13a和13b各自以一体式的方式形成在三个层11,12,13的两侧，其以服务方式保持激光器11,12,13。注入电流到各个电极对（11a，11b，a12,12b，13a和13b）被适当地改变，从而使来自阵列激光器（11,12和13）的光束的方向仅偏转角度θ。因此，激光束可以从大量的点平行地布置。

5. 发明专利

JPS5935428A Mask for x-ray 失效
标题翻译：掩蔽X射线
公开(公告)号：JPS5935428A
公开(公告)日：1984-02-27
申请号：JP14647782
申请日：1982-08-24
申请人： Canon Inc
发明人： MIYAZAWA SEIICHI
IPC分类号： C01B33/02 , C23C14/06 , C23C14/14 , C23C16/24 , H01L21/027
CPC分类号： G03F1/22
摘要： PURPOSE:To obtain the mask of high resolution by forming a soft X-ray transmitting layer by an amorphous Si material. CONSTITUTION:An Si base 3, the surface thereof has an SiO2 layer 9, is encased in a device, SiH4 of an H2 base is introduced, and amorphous Si hydride 10 is formed through glow discharge at a substrate temperature of 300 deg.C under 10 - 10 Torr. When the amorphous Si hydride is formed by using a reactive sputtering method, it is preferable that hydrogen plasma or fluorine heat treatment is added and the quality of a film is ijproved. Au 11 as X-ray absorbing layers is superposed on the amorphous Si 10 obtained through Cr films, and the mask is completed. Accordingly, when amorphous Si is used as the soft X-ray transmitting layer 10, the layer 10 is lighter than single crystal Si while it can further be thinned considerably, irregularity due to the effect of a diffraction phenomenon and the intensity of transmission and the sag of the layer can be reduced, and the area of the base section 3 is further decreased and a mask forming region can be expanded.
摘要翻译：目的：通过非晶Si材料形成软X射线透射层，获得高分辨率的掩模。构成：将Si基体3的表面封装在器件中，引入H 2碱的SiH 4，在300℃的衬底温度下通过辉光放电形成非晶硅氢化物10， 10 -1 -10 -3托。当通过使用反应溅射法形成非晶硅氢化物时，优选加入氢等离子体或氟热处理，并且改善膜的质量。作为X射线吸收层的Au 11叠加在通过Cr膜获得的非晶Si 10上，并完成掩模。因此，当使用非晶Si作为软X射线透射层10时，层10比单晶Si轻，同时可以进一步显着地变薄，由于衍射现象的影响和透射强度的不均匀性可以减小层的凹陷，并且进一步减小基部3的面积，并且可以扩大掩模形成区域。

6. 发明专利

JP2010056247A Imaging sensor and imaging apparatus 有权
标题翻译：成像传感器和成像设备
公开(公告)号：JP2010056247A
公开(公告)日：2010-03-11
申请号：JP2008218818
申请日：2008-08-27
申请人： Canon Inc , キヤノン株式会社
发明人： TAKUBO YOSUKE , MIYAZAWA SEIICHI
IPC分类号： H01L27/14 , H04N5/335 , H04N5/369 , H04N101/00
CPC分类号： H01L27/14632 , H01L27/14625 , H01L27/14629
摘要： PROBLEM TO BE SOLVED: To improve the ratio of the amount of light made incident to each pixel to the amount of light reaching a photoelectric converting part, and also to suppress the deterioration of mechanical strength in a waveguide structure.
SOLUTION: An imaging sensor includes a pixel array with a plurality of pixels arrayed therein, each of which includes: the photoelectric converting part; and the waveguide structure where a plurality of insulating films enclose the side surfaces of a substance with a refractive index higher than that of the plurality of insulating films, in order to guide the light to the photoelectric converting part. The refractive index of the insulating film out of the plurality of insulating films, which encloses an area with the concentration of the light on the side surface of the substance, is smaller than that of the other insulating film.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提高入射到每个像素的光量与到达光电转换部分的光量的比率，并且还抑制波导结构中机械强度的劣化。解决方案：成像传感器包括其中排列有多个像素的像素阵列，每个像素阵列包括：光电转换部分; 以及波导结构，其中多个绝缘膜包围折射率高于多个绝缘膜的折射率的物质的侧表面，以将光引导到光电转换部分。包围物质侧表面的光浓度的区域的多个绝缘膜中的绝缘膜的折射率小于另一绝缘膜的折射率。版权所有（C）2010，JPO＆INPIT

7. 发明专利

JP2009111077A Solid-state imaging device 审中-公开
标题翻译：固态成像装置
公开(公告)号：JP2009111077A
公开(公告)日：2009-05-21
申请号：JP2007280588
申请日：2007-10-29
申请人： Canon Inc , キヤノン株式会社
发明人： MIYAZAWA SEIICHI
IPC分类号： H01L27/14 , G02B3/00 , H04N5/335 , H04N5/369
摘要： PROBLEM TO BE SOLVED: To provide a solid-state imaging device having a waveguide layer of a well-type structure easy to manufacture.
SOLUTION: The solid-state imaging device comprises first and second waveguide layers 3 and 5 consisting of transparent films and for guiding the incident light to a photoelectric conversion region 6, and the refractive index of the central second waveguide layer 5 is made higher than that of the surrounding first waveguide layer 3. The second waveguide layer 5 is formed of a first refractive index portion 5a on the upstream side in the incident direction of the incident light, and a second refractive index portion 5b on the downstream side therein having a refractive index lower than that of the upstream side first refractive index portion 5a.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种具有容易制造的良好结构的波导层的固态成像装置。解决方案：固态成像装置包括由透明膜构成的第一和第二波导层3和5，并将入射光引导到光电转换区域6，并且制成中心第二波导层5的折射率高于周围的第一波导层3.第二波导层5由入射光的入射方向上游侧的第一折射率部分5a和下游侧的第二折射率部分5b形成折射率低于上游侧第一折射率部分5a的折射率。版权所有（C）2009，JPO＆INPIT

8. 发明专利

JP2003045798A Manufacturing method of semiconductor substrate using porous film, and semiconductor device 审中-公开
标题翻译：使用多孔薄膜的半导体衬底的制造方法和半导体器件
公开(公告)号：JP2003045798A
公开(公告)日：2003-02-14
申请号：JP2001228215
申请日：2001-07-27
申请人： Canon Inc , キヤノン株式会社
发明人： MIYAZAWA SEIICHI , OKUDA MASAHIRO , EZAKI MIGAKU
IPC分类号： C30B29/40 , H01L21/20 , H01L21/203 , H01L21/205 , H01L21/306
摘要： PROBLEM TO BE SOLVED: To provide a method for forming high-quality semiconductor materials with few defects, even in a semiconductor film where a lattice constant is different from substrates that have been mass-produced so far, such as Si, GaAs, GaP and InP, and to provide a configuration thereof.
SOLUTION: The method is to comprise a process of manufacturing a first semiconductor layer including a layer where a lattice constant is different from a substrate on the substrate, a process of forming a porous layer on the surface of the first semiconductor layer, and a process of laminating a second semiconductor layer that is the same as the lattice constant of a first semiconductor layer surface, before forming a porous layer on the porous.
COPYRIGHT: (C)2003,JPO
摘要翻译：要解决的问题：即使在晶格常数不同于目前已批量生产的基板的半导体膜中，例如Si，GaAs，GaP和 InP，并提供其配置。解决方案：该方法包括制造包括晶格常数不同于衬底上的衬底的层的第一半导体层的处理，在第一半导体层的表面上形成多孔层的工艺以及工艺在多孔层上形成多孔层之前，层压与第一半导体层表面的晶格常数相同的第二半导体层。

9. 发明专利

JPS59217326A Formation of semiconductor device 失效
标题翻译：形成半导体器件
公开(公告)号：JPS59217326A
公开(公告)日：1984-12-07
申请号：JP9298983
申请日：1983-05-25
申请人： Canon Inc
发明人： MIYAZAWA SEIICHI , NOJIRI HIDEAKI , HAKAMATA ISAO , HAZEMOTO YOSHIKI
IPC分类号： H01L21/208 , H01S5/00 , H01S5/22 , H01S5/223 , H01S5/227 , H01S5/323 , H01S3/18
CPC分类号： H01S5/2232 , H01S5/2205 , H01S5/2209 , H01S5/222 , H01S5/2234 , H01S5/2235 , H01S5/2237 , H01S5/227 , H01S5/2272 , H01S5/2275 , H01S5/32308
摘要： PURPOSE:To obtain a semiconductor device having a superative current strangulation effect by a method wherein the crystalline structure of a substrate or a semiconductor layer on a substrate is partially changed and a semiconductor layer having a structure in accordance with the previous crystalline structure is furthermore grown thereon. CONSTITUTION:A GaAs layer 12 including no impurity is grown in the form of single crystal on a GaAs substrate 11. Into the thus-grown layer, a Ga or As of a high concentration is implanted by means of an ion implantation. As a result, a part of the crystalline structure is changed and the single crystal portion remains in a strip shape, thus forming a high resistance layer 22. Then, an InGaP layer 13 is grown on the GaAs layer 12 including the high resistance layer 22. A part 33 within the layer 13, which is grown on the single crystal portion of the GaAs layer 12, is transformed into a single crystal. While, a part 23 grown on the high resistance layer 22 becomes amorphous or polycrystalline. Subsequently, a GaAs active layer 14 and InGaP layer 15 are laminated on the InGaP layer 13 and finally electrodes 16 and 17 are formed, whereby a semiconductor laser is formed. The stripe region strangulated between high resistance regions 20 is formed without expanding proximate to the substrate and hence the passage of a current 18 flowing between the electrodes is restricted to the strangulated region. The thus-formed semiconductor laser is therefore capable of oscillating at a low current density.
摘要翻译：目的：通过一种方法获得具有超电流扼制效应的半导体器件，其中衬底上的晶体结构或衬底上的半导体层被部分地改变，并且进一步生长具有根据之前的结晶结构的结构的半导体层在其上。构成：在GaAs衬底11上以单晶的形式生长不含杂质的GaAs层12.在这样生长的层中，通过离子注入注入高浓度的Ga或As。结果，晶体结构的一部分发生变化，单晶部分保持条状，从而形成高电阻层22.然后，在包括高电阻层22的GaAs层12上生长InGaP层13 在层13中生长在GaAs层12的单晶部分上的部分33被转变为单晶。而在高电阻层22上生长的部分23变成无定形或多晶。随后，在InGaP层13上层叠GaAs活性层14和InGaP层15，最终形成电极16和17，形成半导体激光。在高电阻区域20之间被扼制的条纹区域形成为没有靠近基板扩张，因此在电极之间流动的电流18的通过被限制到被扼杀的区域。因此，这样形成的半导体激光器能够以低电流密度振荡。

10. 发明专利

JPS59208798A Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：JPS59208798A
公开(公告)日：1984-11-27
申请号：JP8391983
申请日：1983-05-12
申请人： Canon Inc
发明人： NOJIRI HIDEAKI , MIYAZAWA SEIICHI , HAKAMATA ISAO , HAZEMOTO YOSHIKI
IPC分类号： H01S5/00 , H01S5/22 , H01S5/223 , H01S5/227 , H01S5/323
CPC分类号： H01S5/227 , H01S5/2205 , H01S5/2209 , H01S5/222 , H01S5/2232 , H01S5/2237 , H01S5/2272 , H01S5/2275 , H01S5/32308
摘要： PURPOSE:To lower the oscillating threshold value current density and to facilitate the manufacture in an embedded semiconductor device by a method wherein embedded layers are formed of an amorphous semiconductor. CONSTITUTION:In the semiconductor device shown in the diagram, semiconductor layers 11-15 in a mesa structure consisting of a plural number of GaAs- GaAlAs system-layers involving an active layer 12 have been embedded in amorphous Si layers 18. In this condition, the layers 18 have a lower refractive index and a higher-resistance property than the layers 11-15. For that reason, the spreading of current, which flows through this semiconductor device, is limited by the layers 18 and the current almost flows through the layers 11-15, while the light to be oscillated is shut in the layer 12 by the difference during the refractive index of the layer 12 and that of the layers 18. The semiconductor device having this constitution like this efficiently has been enabled to shut light and current in the resonator width direction by the layers 18 and to start the oscillation at a lower current density. Furthermore, the device can be easily manufactured because the layers 18 have been formed of amorphous Si.
摘要翻译：目的：降低振荡阈值电流密度，并通过其中嵌入层由非晶半导体形成的方法在嵌入式半导体器件中制造。构成：在图中所示的半导体器件中，由包含有源层12的多个GaAs-GaAlAs系层构成的台面结构中的半导体层11-15已经嵌入非晶硅层18中。在这种情况下，层18具有比层11-15更低的折射率和更高的电阻特性。因此，流过该半导体器件的电流的扩展受到层18的限制，并且电流几乎流过层11-15，而待振荡的光在层12中被关闭在层12的折射率和层18的折射率。具有这种结构的半导体器件能够有效地通过层18遮断谐振器宽度方向上的光和电流，并以较低的电流密度开始振荡。此外，由于层18已经由非晶Si形成，所以可以容易地制造该器件。

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