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21. 发明专利

JP2005269606A Surface acoustic wave element, and surface acoustic wave filter providing same 审中-公开
标题翻译：表面声波元件和表面声波滤波器
公开(公告)号：JP2005269606A
公开(公告)日：2005-09-29
申请号：JP2004373304
申请日：2004-12-24
申请人： Sanyo Electric Co Ltd , 三洋電機株式会社
发明人： YOSHIOKA KOICHI , OGURA MORIO , FUJITA MASAYUKI , KOBAYASHI TAIZO , WAKIZAKA KENICHIRO
IPC分类号： H03H9/145 , H01L21/4763 , H01L41/04 , H01L41/08 , H01L41/18 , H02N2/00 , H03H9/02 , H03H9/64
CPC分类号： H03H9/6489 , H03H9/02094 , H03H9/02929 , H03H9/14541
摘要： PROBLEM TO BE SOLVED: To acquire higher electric power resistance than conventional, by reducing the generation of migration in a surface acoustic wave element, where an electrode to be an interdigital transducer is formed on a piezoelectric substrate.
SOLUTION: In the surface acoustic wave element, the electrode 8 is configured, by laminating a ground Ti layer 2, an Al alloy layer 3, an upper Ti layer 4, and an Al alloy layer 7 one by one on a surface of the piezoelectric substrate 1, in which thickness A of the ground Ti layer 2 is larger than thickness C of the upper Ti layer 4, which is not thinner than 50 nm, and not thicker than 120 nm, and the sum of the thickness A of the ground Ti layer 2 and the thickness C of the upper Ti layer 4 is less than 150 nm.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：为了获得比传统的更高的电力电阻，通过减少在压电基板上形成作为叉指式换能器的电极的表面声波元件中的迁移的产生。解决方案：在表面声波元件中，电极8通过在表面上逐层地层叠研磨的Ti层2，Al合金层3，上部Ti层4和Al合金层7而构成，其中，研磨Ti层2的厚度A大于上述Ti层4的厚度C，其比50nm不薄且不厚于120nm，厚度A的总和的上层Ti层2的厚度C小于150nm。版权所有（C）2005，JPO＆NCIPI

22. 发明专利

JP2005039166A Piezoelectric element, ink-jet-type recording head, ink-jet printer, surface acoustic wave device, frequency filter, oscillator, electronic circuit, thin-film piezoelectric resonator, and electronic equipment 有权
标题翻译：压电元件，喷墨型记录头，喷墨打印机，表面声波装置，频率滤波器，振荡器，电子电路，薄膜压电谐振器和电子设备
公开(公告)号：JP2005039166A
公开(公告)日：2005-02-10
申请号：JP2003308967
申请日：2003-09-01
申请人： Seiko Epson Corp , セイコーエプソン株式会社
发明人： MIYAZAWA HIROSHI , HIGUCHI AMAMITSU , IWASHITA SETSUYA
IPC分类号： B41J2/045 , B41J2/055 , B41J2/135 , B41J2/14 , H01L41/08 , H01L41/09 , H01L41/18 , H01L41/22 , H01L41/29 , H01L41/319 , H01L41/39 , H02N2/00 , H03H3/02 , H03H3/08 , H03H9/02 , H03H9/05 , H03H9/17 , H03H9/25 , H01L41/24
CPC分类号： B41J2/14233 , H01L41/0478 , H01L41/0815 , H01L41/1878 , H01L41/316 , H01L41/319 , H03H3/02 , H03H9/02094 , H03H9/02133 , H03H9/0542 , H03H9/172 , H03H9/173 , H03H9/174
摘要： PROBLEM TO BE SOLVED: To provide a high-performance piezoelectric element that does not contain Pb and can be directly packaged onto an Si substrate for enabling formation in a thin-film process, and to provide an ink-jet type recording head using the piezoelectric element, an ink-jet printer, a surface acoustic wave device, a frequency filter, an oscillator, an electronic circuit, and electronic equipment. SOLUTION: The piezoelectric element 1 has a piezoelectric film 5 made of BiFeO 3 . The piezoelectric element 1 may change the internal volume of a cavity by the deformation of the piezoelectric film 5 in the ink-jet recording head equipped with the cavity whose internal volume changes. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种不含Pb的高性能压电元件，并且可以直接封装在Si衬底上以便能够在薄膜工艺中形成，并且提供喷墨型记录头使用压电元件，喷墨打印机，表面声波装置，频率滤波器，振荡器，电子电路和电子设备。解决方案：压电元件1具有由BiFeO 3 SB制成的压电膜5。压电元件1可以通过配备有内部体积变化的空腔的喷墨记录头中的压电膜5的变形来改变空腔的内部容积。版权所有（C）2005，JPO＆NCIPI

23. 发明专利

JP3538710B2 Piezoelectric filter and a method of manufacturing the same 有权
公开(公告)号：JP3538710B2
公开(公告)日：2004-06-14
申请号：JP2000193296
申请日：2000-06-27
申请人：株式会社村田製作所
发明人：茂夫尾島
IPC分类号： H03H3/02 , H03H9/02 , H03H9/05 , H03H9/10 , H03H9/205 , H03H9/58
CPC分类号： H03H9/0561 , H03H9/02094 , H03H9/1035 , H03H9/58 , Y10T29/42

24. 发明专利

JP2003530705A Tunable filter configuration 有权
公开(公告)号：JP2003530705A
公开(公告)日：2003-10-14
申请号：JP2001574976
申请日：2001-04-04
申请人：コーニンクレッカフィリップスエレクトロニクスエヌヴィ
发明人：ウイルヘルム、ジー．ハーマン , ウベ、マッケンス , オラフ、ウニッケ , ハンス、ピー．レーブル , マライケ、ケイ．クレイ , マルティヌス、エイチ．ダブリュ．エム．バン、デルデン , ライナー、キーウィット , ロバート、エフ．ミルソン
IPC分类号： H01G7/06 , H03H3/04 , H03H7/12 , H03H9/02 , H03H9/05 , H03H9/54 , H03H9/56
CPC分类号： H03H9/562 , H03H3/04 , H03H9/02094 , H03H9/02149 , H03H9/0542 , H03H9/566
摘要： (57)【要約】本発明は、互いに接続され、その少なくとも１つはチューニング可能な容量を有するキャパシタと接続された、少なくとも２つの共振器を有するチューニング可能なフィルタ構成を示す。共振器の電気特性、および全体のフィルタ特性はキャパシタの容量における変化による変化する。さらに、このようなフィルタ構成を有する送信機、受信機、移動電話機器、無線データ伝送システムがチューニング可能なバルク音響波共振器とともに開示される。

25. 发明专利

JP4963193B2 Piezoelectric thin film device 有权
公开(公告)号：JP4963193B2
公开(公告)日：2012-06-27
申请号：JP2006142658
申请日：2006-05-23
申请人：日本碍子株式会社
发明人：知義多井 , 幸久大杉 , 省一郎山口
IPC分类号： H03H9/17 , H01L41/09 , H01L41/18 , H01L41/22 , H01L41/253 , H01L41/29 , H01L41/313
CPC分类号： H03H9/02094 , H03H3/02 , H03H9/132 , H03H9/173 , H03H9/564 , H03H9/568 , H03H2003/021 , H03H2003/0457
摘要： An object of the present invention is to provide a piezoelectric thin film device including a single or a plurality of film bulk acoustic resonators wherein a frequency impedance characteristic is unsusceptible to spuriousness. In a film bulk acoustic resonator, a piezoelectric thin film is supported by a support substrate via an adhesive layer. An upper electrode and a lower electrode each having a predetermined pattern are formed on upper and lower surfaces of the piezoelectric thin film. Further, on the upper surface of the piezoelectric thin film, an additional film for adding a mass to an outside of an excitation region is formed as superposed on the upper electrode.

26. 发明专利

JP4223428B2 Filter and a method of manufacturing the same 有权
公开(公告)号：JP4223428B2
公开(公告)日：2009-02-12
申请号：JP2004101878
申请日：2004-03-31
申请人：富士通メディアデバイス株式会社 , 富士通株式会社
发明人：政則上田 , 武坂下 , 勉宮下 , 匡郁岩城 , 剛横山 , 時弘西原 , 眞司谷口
IPC分类号： H01L41/09 , H03H9/02 , H01L41/187 , H01L41/22 , H01L41/253 , H03H3/02 , H03H3/04 , H03H9/17 , H03H9/56 , H03H9/58 , H03H9/70
CPC分类号： H03H3/04 , H03H9/02094 , H03H9/02149 , H03H9/174 , H03H9/564 , H03H9/568 , H03H2003/023 , H03H2003/0428
摘要： A resonator includes a piezoelectric thin-film provided on a main surface of a substrate, a first electrode film provided on a first surface of the piezoelectric thin-film, a second electrode film provided on a second surface of the piezoelectric thin-film, a frequency adjustment film provided on one of the first and second electrode films, the frequency adjustment film comprising a film laminate including a first adjustment film provided on said one of the first and second electrode films, and a second adjustment film provided on the first adjustment film. The first adjustment film is used for Deltaf adjustment, and the second adjustment film is used for correcting frequency deviations generated in the filter manufacturing process. Thus, it is possible to accurately control the center frequency of the filter in which the multiple resonators are connected.

27. 发明专利

JP2005286945A Resonator, filter and manufacture of resonator 有权
标题翻译：谐振器，滤波器和谐波器的制造
公开(公告)号：JP2005286945A
公开(公告)日：2005-10-13
申请号：JP2004101878
申请日：2004-03-31
申请人： Fujitsu Ltd , Fujitsu Media Device Kk , 富士通メディアデバイス株式会社 , 富士通株式会社
发明人： YOKOYAMA TAKESHI , NISHIHARA TOKIHIRO , SAKASHITA TAKESHI , TANIGUCHI SHINJI , IWAKI KIYOUIKU , UEDA MASANORI , MIYASHITA TSUTOMU
IPC分类号： H01L41/09 , H01L41/187 , H01L41/22 , H01L41/253 , H03H3/02 , H03H3/04 , H03H9/02 , H03H9/17 , H03H9/56 , H03H9/58 , H03H9/70
CPC分类号： H03H3/04 , H03H9/02094 , H03H9/02149 , H03H9/174 , H03H9/564 , H03H9/568 , H03H2003/023 , H03H2003/0428
摘要： PROBLEM TO BE SOLVED: To make the precise Δf adjustment of a piezoelectric thin film resonator possible and to highly accurately adjust the center frequency of a filter constituted of the piezoelectric thin film resonators. SOLUTION: A lower electrode film 12 in the 2-layer structure of Ru/Cr, a piezoelectric film 13 of AlN and an upper electrode film 14 of Ru are formed on a substrate 11, and a first adjustment layer 15 of Ti having a second adjustment layer 16 of SiO 2 thereon is formed in an area facing the lower electrode film 12 on the upper electrode film 14. The second adjustment layer 16 of SiO 2 is formed also on the surface of the substrate 11 not covered with the lower electrode film 12 or the upper electrode film 14 and on the surface of the piezoelectric film 13. Further, on the back surface side of the substrate 11 roughly corresponding to the facing area of the upper electrode film 14 and the lower electrode film 12, a gap 17 as a cavity for confining elastic energy is formed by etching Si with a fluorine-based gas from the back side of the substrate 11. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：为了使压电薄膜谐振器的精确Δf调节成为可能，并且高精度地调节由压电薄膜谐振器构成的滤波器的中心频率。解决方案：在基板11上形成Ru / Cr的2层结构的下电极膜12，AlN的压电膜13和Ru的上电极膜14，将Ti的第一调整层15 在上电极膜14上的面向下电极膜12的区域中形成有SiO 2 的第二调节层16.第二调整层16为SiO 2 也形成在未被下电极膜12或上电极膜14覆盖的基板11的表面上以及压电膜13的表面上。此外，在基板11的背面侧大致对应于面上电极膜14和下电极膜12的面积，作为用于限制弹性能的空腔的间隙17通过从衬底11的背面用氟基气体蚀刻Si而形成。版权所有（ C）2006，JPO＆NCIPI

28. 发明专利

JP2005236337A Thin-film acoustic resonator and method of producing the same 审中-公开
标题翻译：薄膜声学谐振器及其制造方法
公开(公告)号：JP2005236337A
公开(公告)日：2005-09-02
申请号：JP2001141845
申请日：2001-05-11
申请人： Ube Ind Ltd , 宇部興産株式会社
发明人： YAMADA TETSUO , NAGAO KEIGO , HASHIMOTO TOMONORI
IPC分类号： H04R19/02 , B06B1/06 , G10K11/04 , H01L41/09 , H01L41/22 , H01L41/313 , H03H3/02 , H03H9/02 , H03H9/05 , H03H9/13 , H03H9/17 , H03H9/56 , H03H9/58 , H04R31/00
CPC分类号： H03H9/173 , B06B1/0644 , G10K11/04 , H03H3/02 , H03H9/02094 , H03H9/02102 , H03H9/02149 , H03H9/174 , H03H9/562 , H03H9/564 , H03H9/585 , H03H9/587 , H03H2003/021 , H03H2003/0428 , Y10S977/888 , Y10T29/42 , Y10T29/49155
摘要： PROBLEM TO BE SOLVED: To provide a thin-film acoustic resonator with high performance superior in electromechanical coupling coefficient and acoustic quality factor or the like. SOLUTION: A pit 52 is formed in a substrate comprising a silicon wafer 51 on a surface of which a silicon oxide thin layer 53 is formed. A sandwich structure 60, comprising a piezoelectric layer 62 and lower and upper electrodes 61, 63 jointed to both surfaces of the piezoelectric layer, is disposed so as to stride over the pit 52. The upper surface of the lower electrode 61 and the lower surface of the piezoelectric layer 62 jointed to the upper surface of the lower electrode are treated so that the RMS variation of the height thereof is equal to 50 nm or smaller. The thickness of the lower electrode 61 is set to 150 nm or smaller. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供具有优异的机电耦合系数和声学质量因子等的高性能的薄膜声谐振器。解决方案：在其表面上形成硅氧化物薄层53的硅晶片51的基板中形成凹坑52。夹层结构60包括压电层62和与压电层的两个表面连接的下电极61和上电极63，以跨越凹坑52的方式设置。下电极61的上表面和下表面接合到下电极的上表面的压电层62的高度的RMS变化等于或小于50nm。下电极61的厚度设定为150nm以下。版权所有（C）2005，JPO＆NCIPI

29. 发明专利

JP2005198216A Energy trap type piezoelectric resonator component 有权
标题翻译：能量陷波型压电谐振器组件
公开(公告)号：JP2005198216A
公开(公告)日：2005-07-21
申请号：JP2004010663
申请日：2004-01-19
申请人： Murata Mfg Co Ltd , 株式会社村田製作所
发明人： YAMADA MITSUHIRO , YOSHIO MASAKAZU , KOTANI KENICHI
IPC分类号： H03H9/02 , H03H9/10 , H03H9/17
CPC分类号： H03H9/1035 , H03H9/0207 , H03H9/02094 , H03H9/132 , H03H9/177
摘要： PROBLEM TO BE SOLVED: To provide an energy trap type piezoelectric resonator component which utilizes a third overtone of a thickness longitudinal vibration, effectively controls the fundamental wave of the thickness longitudinal vibration as a spurious wave, is relatively free from area restraints of the electrode and dimensional constraints and meets miniaturization.
SOLUTION: In the piezoelectric resonator utilizing a third overtone of a thickness longitudinal vibration mode, first and second vibrating electrodes 4 having an elliptical shape are arranged on portions of first and second major surfaces 3a, 3b of a piezoelectric substrate 3 having a rectangular shape, and the first vibrating electrode 4 and the second vibrating electrode face each other on front and rear sides with the piezoelectric substrate 3 interposed therebetween. In an energy trap type piezoelectric resonator component 1, a flattening ratio a/b of a minor axis diameter (b) to a major axis diameter (a) of the elliptical shape of the vibrating electrode 4 is within a range of 1.2 to 1.45.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：为了提供利用厚度纵向振动的第三泛音的能量陷波型压电谐振器部件，将厚度纵向振动的基波有效地控制为杂波，相对没有区域限制电极和尺寸约束并满足小型化。解决方案：在具有厚度纵向振动模式的第三谐波的压电谐振器中，具有椭圆形状的第一和第二振动电极4布置在压电基片3的第一和第二主表面3a，3b的具有并且第一振动电极4和第二振动电极的前侧和后面彼此面对，压电基板3插入其间。在能量陷波型压电谐振器部件1中，短轴直径（b）与振动电极4的椭圆形状的长轴直径（a）的平坦化比a / b在1.2〜1.45的范围内。版权所有（C）2005，JPO＆NCIPI

30. 发明专利

JP2005198117A Electronic device formation structure, and manufacturing method of electronic device 审中-公开
标题翻译：电子器件形成结构和电子器件的制造方法
公开(公告)号：JP2005198117A
公开(公告)日：2005-07-21
申请号：JP2004003586
申请日：2004-01-09
申请人： Tdk Corp , Tdk株式会社
发明人： NOGUCHI TAKAO , SAITO HISATOSHI
IPC分类号： H01L41/09 , H01L21/02 , H01L21/50 , H01L23/02 , H01L41/047 , H01L41/08 , H01L41/187 , H01L41/22 , H01L41/313 , H03H3/02 , H03H9/02 , H03H9/17
CPC分类号： H03H9/175 , H01L41/0477 , H01L41/316 , H03H3/02 , H03H9/02094
摘要： PROBLEM TO BE SOLVED: To provide an electronic device formation structure for enhancing freedom in product configuration greatly. SOLUTION: The electronic device formation structure includes a substrate 11 and a conductive film 12 formed on the substrate 11. This invention is characterized by force of adhesion of 0.1 N/cm or smaller in the conductor film 12 to the substrate 11. In the electronic device formation structure, the force of adhesion of the conductive film to the substrate is sufficiently weak, so the conductive film can be peeled easily from the substrate. In this way, the electronic device can be formed on a substrate other than the substrate used at the film formation, so the freedom in product configuration can be enhanced greatly. Especially, if the force of adhesion of a lower conductive film on the substrate side is 0.04 N/cm or smaller, the peeling of the conductive film from the substrate become very easy. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种用于大大提高产品配置自由度的电子装置形成结构。解决方案：电子器件形成结构包括基板11和形成在基板11上的导电膜12.本发明的特征在于导体膜12中的粘附力为0.1N / cm或更小的基底11。在电子器件形成结构中，导电膜对基片的粘附力足够弱，因此导电膜可以容易地从基板剥离。以这种方式，电子器件可以形成在除了成膜之后使用的衬底之外的衬底上，从而可以大大提高产品配置的自由度。特别是，如果基板侧的下导电膜的附着力为0.04N / cm以下，则导电膜从基板的剥离变得非常容易。版权所有（C）2005，JPO＆NCIPI

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