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1. 发明专利

JP2010107867A Optical element and optical device using the same 审中-公开
标题翻译：光学元件和使用该光学元件的光学器件
公开(公告)号：JP2010107867A
公开(公告)日：2010-05-13
申请号：JP2008281718
申请日：2008-10-31
申请人： Sanyo Electric Co Ltd , 三洋電機株式会社
发明人： KOBAYASHI TAIZO , MATSUMOTO MITSUHARU , NAKAI MASAYA , KURAMOTO KEIICHI
IPC分类号： G02B5/00 , G02B5/02
摘要： PROBLEM TO BE SOLVED: To obtain an optical element which scarcely generates heat caused by light absorption, which is designed and manufactured with ease, and which has a function of an optical filter scarcely producing return light, and to obtain an optical device using the optical element.
SOLUTION: The optical element 3 is formed by dispersing a filler 2 in a preform 1, and has the function of the optical filter which selectively transmits light of a predetermined wavelength region, wherein a difference of refractive indexes between the preform 1 and the filler 2 in the predetermined wavelength region is 0.1 or less, and a difference of Abbe numbers between the preform 1 and the filler 2 is 10 or more.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：为了获得几乎不产生由光吸收引起的热的光学元件，其容易地设计和制造，并且具有几乎不产生返回光的滤光器的功能，并且获得光学器件使用光学元件。解决方案：光学元件3通过将填料2分散在预成型体1中而形成，并且具有选择性透射预定波长区域的光的滤光器的功能，其中预成型体1和预定波长区域中的填料2为0.1以下，预成型体1和填料2之间的阿贝数差为10以上。版权所有（C）2010，JPO＆INPIT

2. 发明专利

JP2009094478A Solid electrolyte capacitor 有权
标题翻译：固体电解电容器
公开(公告)号：JP2009094478A
公开(公告)日：2009-04-30
申请号：JP2008201256
申请日：2008-08-04
申请人： Sanyo Electric Co Ltd , 三洋電機株式会社
发明人： KOBAYASHI TAIZO , UMEMOTO TAKUJI , NONOGAMI HIROSHI
IPC分类号： H01G9/052
摘要： PROBLEM TO BE SOLVED: To provide a solid electrolyte capacitor capable of preventing capacitance from decreasing.
SOLUTION: The solid electrolyte capacitor includes an anode body 1 composed of a porous sintered body of a valve metal, a dielectric layer 2 formed on the surface of the anode body 1, a conductive polymer layer 3 formed on the dielectric layer 2, and a cathode layer 4 formed on the conductive polymer layer 3. Then, the dielectric layer 2 includes a plurality of pore-like pits (recesses) 2a extending in a thickness direction of the dielectric layer 2 towards the anode body 1 from an interface between the dielectric layer 2 and the conductive polymer layer 3.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供能够防止电容降低的固体电解质电容器。解决方案：固体电解电容器包括由阀金属的多孔烧结体构成的阳极体1，形成在阳极体1的表面上的电介质层2，形成在电介质层2上的导电聚合物层3 以及形成在导电聚合物层3上的阴极层4.然后，电介质层2包括从电介质层2的厚度方向朝着阳极体1从界面延伸的多个孔状凹坑（凹部）2a 介电层2和导电聚合物层3之间。版权所有：（C）2009，JPO＆INPIT

3. 发明专利

JP2006101551A Surface acoustic wave high frequency filter 审中-公开
标题翻译：表面声波高频滤波器
公开(公告)号：JP2006101551A
公开(公告)日：2006-04-13
申请号：JP2005350577
申请日：2005-12-05
申请人： Sanyo Electric Co Ltd , 三洋電機株式会社
发明人： KOBAYASHI TAIZO , MATSUI KUNIYUKI , HIRAO YASUKATA , TAKEUCHI KOSUKE , SHIBATA KENICHI
IPC分类号： H03H9/64 , H03H9/145
摘要： PROBLEM TO BE SOLVED: To provide a surface acoustic wave high frequency filter having reduced insertion loss and simultaneously providing a high attenuation quantity out of bands.
SOLUTION: A surface acoustic wave high frequency filter comprises surface acoustic wave resonators 52-54 of which the input/output terminals are connected in series to a signal line, and surface acoustic wave resonators 38-40 of which the one side of input/output terminals are connected to the above signal line and the other side are grounded. The surface acoustic wave resonator 52 is provided with interdigital electrode surface acoustic wave transducers 8, 9 connected in series, the surface acoustic wave resonator 53 is provided with interdigital electrode surface acoustic wave transducers 10, 11 connected in series, and the surface acoustic wave resonator 54 is provided with interdigital electrode surface acoustic wave transducers 12, 13 connected in series. Each of the surface acoustic wave resonators 52-54 connected in series to the signal line has four-times impedance of that of the surface acoustic wave resonators 38-40 connected in parallel to the signal line.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供具有降低的插入损耗并同时在带外提供高衰减量的表面声波高频滤波器。解决方案：表面声波高频滤波器包括输入/输出端子与信号线串联连接的表面声波谐振器52-54，声表面波谐振器38-40的一侧输入/输出端子连接到上述信号线，另一端接地。表面声波谐振器52设置有串联连接的叉指式电极表面声波换能器8,9，表面声波谐振器53设置有串联连接的叉指式电极声表面波换能器10,11，声表面波谐振器 54设置有串联连接的叉指式电极表面声波换能器12,13。与信号线串联连接的每个声表面波谐振器52-54都是与信号线并联连接的声表面波谐振器38-40的四倍阻抗。版权所有（C）2006，JPO＆NCIPI

4. 发明专利

JP2006074838A Surface acoustic wave high-frequency filter 审中-公开
标题翻译：表面声波高频滤波器
公开(公告)号：JP2006074838A
公开(公告)日：2006-03-16
申请号：JP2005345787
申请日：2005-11-30
申请人： Sanyo Electric Co Ltd , 三洋電機株式会社
发明人： KOBAYASHI TAIZO , MATSUI KUNIYUKI , HIRAO YASUKATA , TAKEUCHI KOSUKE , SHIBATA KENICHI
IPC分类号： H03H9/64
摘要： PROBLEM TO BE SOLVED: To provide a surface acoustic wave high-frequency filter which decreases an insertion loss and simultaneously obtains a high attenuation amount out of bands.
SOLUTION: A surface acoustic wave high-frequency filter of the present invention is comprised of surface acoustic wave resonators 52-54 with input/output terminals connected in series to signal lines and surface acoustic wave resonators 38-40 with one side of input/output terminals being connected to said signal lines and another side being grounded. The surface acoustic wave resonator 52 comprises inter-digital electrode surface acoustic wave transducers 8, 9 connected in series, the surface acoustic wave resonator 53 comprises inter-digital electrode surface acoustic wave transducers 10, 11 connected in series, and the surface acoustic wave resonator 54 comprises inter-digital surface acoustic wave transducers 12, 13 connected in series. The impedance of each of the surface acoustic wave resonators 52-54 connected in series to the signal lines has four-fold impedance in comparison with the impedance of the surface acoustic wave resonators 38-40 connected in parallel to the signal lines.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种降低插入损耗并同时获得高频带衰减量的表面声波高频滤波器。解决方案：本发明的表面声波高频滤波器包括具有与信号线串联连接的输入/输出端子和表面声波谐振器38-40的表面声波谐振器52-54，其一侧输入/输出端子连接到所述信号线，另一侧接地。表面声波谐振器52包括串联连接的数字间电极表面声波换能器8,9，声表面波谐振器53包括串联连接的数字间电极声表面波换能器10,11，声表面波谐振器 54包括串联连接的数字间声表面波换能器12,13。与信号线并联连接的表面声波谐振器38-40的阻抗相比，与信号线串联连接的每个声表面波谐振器52-54的阻抗相比，具有四倍的阻抗。版权所有（C）2006，JPO＆NCIPI

5. 发明专利

JP2010232699A Solid electrolytic capacitor, and method of manufacturing the same 有权
标题翻译：固体电解电容器及其制造方法
公开(公告)号：JP2010232699A
公开(公告)日：2010-10-14
申请号：JP2010162380
申请日：2010-07-20
申请人： Sanyo Electric Co Ltd , 三洋電機株式会社
发明人： IIDA TAKAHISA , YANO MUTSUMI , KIMOTO MAMORU , KOBAYASHI TAIZO , NONOGAMI HIROSHI
IPC分类号： H01G9/04 , H01G9/00
摘要： PROBLEM TO BE SOLVED: To increase the capacitance of a solid electrolytic capacitor while suppressing the cracking or crystallization of a dielectric layer and preventing increase in leakage current when a heat treatment process such as a reflow process is performed for the solid electrolytic capacitor.
SOLUTION: In the solid electrolytic capacitor including an anode 1 formed of a valve action metal or an alloy containing a valve action metal as a main constituent, a dielectric layer 2 formed by anodizing the anode, and a cathode 4 formed on the dielectric layer, the dielectric layer includes a first dielectric layer 21 located on the anode side, and a second dielectric layer 22 formed on the first dielectric layer, and an oxygen concentration in the second dielectric layer is decreased from the first dielectric layer side toward the cathode side.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：为了在抑制电介质层的开裂或结晶的同时增加固体电解电容器的电容，并且当对固体电解电容器进行诸如回流处理的热处理工艺时，防止漏电流的增加。解决方案：在包括由阀作用金属形成的阳极1或包含阀作用金属作为主要成分的合金的固体电解电容器中，通过阳极化阳极形成的电介质层2和形成在其上的阴极4 介电层，介电层包括位于阳极侧的第一电介质层21和形成在第一电介质层上的第二电介质层22，并且第二电介质层中的氧浓度从第一介电层侧朝向阴极侧。版权所有（C）2011，JPO＆INPIT

6. 发明专利

JP2010121030A Translucent resin composite and optical element 审中-公开
标题翻译：透明树脂复合材料和光学元件
公开(公告)号：JP2010121030A
公开(公告)日：2010-06-03
申请号：JP2008295630
申请日：2008-11-19
申请人： Sanyo Electric Co Ltd , 三洋電機株式会社
发明人： MATSUMOTO MITSUHARU , KOBAYASHI TAIZO , KURAMOTO KEIICHI , NAKAI MASAYA
IPC分类号： C08L101/12 , C08L1/02 , G02B1/04 , G02C7/00
摘要： PROBLEM TO BE SOLVED: To provide a translucent resin composite which is produced by using a cellulose derivative as a filler and a resin having a refractive index of ≥1.50 and to provide an optical element obtained by using the same.
SOLUTION: The translucent resin composite is obtained by incorporating a cellulose derivative 1, obtained by substituting a group having an aromatic ring for a part or all of hydrogen atoms of OH groups of cellulose, into a translucent resin 2. The difference between refractive indices of the cellulose derivative 1 and the translucent resin 2 is preferably ≤0.01.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供通过使用纤维素衍生物作为填料和折射率为≥1.50的树脂制备的半透明树脂复合材料，并提供通过使用它的光学元件。解决方案：半透明树脂复合材料通过将通过将具有芳环的基团取代纤维素的OH基团的一部分或全部氢原子的基团并入透光性树脂2而获得的纤维素衍生物1得到。纤维素衍生物1和半透明树脂2的折射率优选为≤0.01。版权所有（C）2010，JPO＆INPIT

7. 发明专利

JP2010077306A Light-transmissive resin composite 审中-公开
标题翻译：光传动树脂复合材料
公开(公告)号：JP2010077306A
公开(公告)日：2010-04-08
申请号：JP2008248114
申请日：2008-09-26
申请人： Sanyo Electric Co Ltd , 三洋電機株式会社
发明人： MATSUMOTO MITSUHARU , KURAMOTO KEIICHI , NAKAI MASAYA , KOBAYASHI TAIZO
IPC分类号： C08L1/26 , C08J5/00 , C08L101/12
摘要： PROBLEM TO BE SOLVED: To provide a light-transmissive resin composite reinforced with cellulose which can be easily produced.
SOLUTION: The light-transmissive resin composite is a composite formed of a solid matter of a water-soluble cellulose ether and a light-transmissive resin. For example, the light-transmissive resin composite is produced by using a porous molded body 3 as a solid matter of the water-soluble cellulose ether, impregnating the porous molded body 3 with a liquid resin and then curing the liquid resin to form a light-transmissive resin or by incorporating a solid matter of the water-soluble cellulose ether in the form of a film, a scaly filler or a fibrous filler into the light-transmissive resin.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供可以容易地生产的用纤维素增强的透光树脂复合材料。解决方案：透光树脂复合物是由水溶性纤维素醚的固体物质和透光性树脂形成的复合体。例如，透光性树脂复合体通过使用作为水溶性纤维素醚的固体成分的多孔成型体3，用液态树脂浸渍多孔成型体3，然后使液态树脂固化而形成光或通过将水溶性纤维素醚的固体物质以薄膜，鳞片状填充剂或纤维填料的形式引入到透光树脂中。版权所有（C）2010，JPO＆INPIT

8. 发明专利

JP2006270770A Thin film bulk wave element and high frequency device 审中-公开
标题翻译：薄膜波浪元件和高频器件
公开(公告)号：JP2006270770A
公开(公告)日：2006-10-05
申请号：JP2005088488
申请日：2005-03-25
申请人： Sanyo Electric Co Ltd , 三洋電機株式会社
发明人： FUJITA MASAYUKI , KOBAYASHI TAIZO
IPC分类号： H03H9/17 , H03H9/54
摘要： PROBLEM TO BE SOLVED: To provide a thin film bulk wave element and a high frequency device having a high Q-value and superior resonance characteristics.
SOLUTION: The thin film bulk wave element has a rectangular plane shaped recess 2 on the surface of a board 1, and a thin film resonator 6 formed across the center of the recess 2. The resonator 6 is composed of a piezoelectric thin film 3 and electrodes 4, 5 formed on the upside and the underside of the thin film 3. Openings 7, 7 of lengths L are formed between a set of opposite sides 6b, 6d and the board, respectively, at the marginal edge of the resonator 6, and the sides 6b, 6d are distant from the board 1 at their centers over the lengths L. The electrodes 4, 5 are connected to pad electrodes 8, 9 formed on the board 1, respectively, and also to a not-shown external circuit through the pad electrodes 8, 9.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供具有高Q值和优异谐振特性的薄膜体波元件和高频器件。解决方案：薄膜体波元件在基板1的表面上具有矩形的平面形凹部2，并且在凹部2的中心形成有薄膜谐振器6.谐振器6由压电薄片膜3和形成在薄膜3的上侧和下侧上的电极4,5形成。长度为L的开口7,7分别形成在一组相对侧6b，6d和板之间，边缘边缘处谐振器6和侧面6b，6d在其长度L的中心处远离板1.电极4,5分别连接到形成在板1上的焊盘电极8,9，通过焊盘电极8,9显示外部电路。版权所有（C）2007，JPO＆INPIT

9. 发明专利

JP2005286658A Semiconductor device 审中-公开
标题翻译：半导体器件
公开(公告)号：JP2005286658A
公开(公告)日：2005-10-13
申请号：JP2004096976
申请日：2004-03-29
申请人： Sanyo Electric Co Ltd , 三洋電機株式会社
发明人： USUKI TATSURO , YOSHIOKA KOICHI , TAKEDA KATSUTOSHI , FUJITA MASAYUKI , KOBAYASHI TAIZO , WAKIZAKA KENICHIRO
IPC分类号： H01G5/013 , H01G7/06 , H01L41/08 , H01L41/18 , H01L41/187 , H01L41/22 , H01L41/253 , H01L41/29 , H03H9/02 , H03H9/145 , H03H9/17 , H03H9/25
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device including a thin film bulk wave element whose resonance frequency is adjustable, which can be made more small-sized. SOLUTION: The semiconductor device 11 is provided with: the thin film bulk wave element 10; a resonance frequency adjustment section 11; a wire 12; a silicon oxide layer 13; and a silicon substrate 14. The thin film bulk wave element 10 is configured such that an upper electrode 100 and a lower electrode 101 sandwich a piezoelectric thin film 102. A cavity 140 is provided to a part of the substrate 14 opposed to the piezoelectric thin film 102 with the silicon oxide layer 13 in-between. The resonance frequency adjustment section 11 is provided with a variable voltage power supply 110 and a variable capacitance diode 111. The variable capacitance diode 111 includes a p type region 111p and an n type region 111n and the variable capacitance diode 111 adjusts the resonance frequency of the thin film bulk wave element 10 by the application of a voltage to the p type region 111p, the voltage being lower than the voltage applied to the n type region 111n so as to vary the capacitance of a thus formed pn junction. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种包括其谐振频率可调的薄膜体波元件的半导体器件，其可以进一步小型化。解决方案：半导体器件11设置有：薄膜体波元件10; 共振频率调整部11; 电线12; 氧化硅层13; 和硅基板14.薄膜体波元件10被配置为使得上电极100和下电极101夹着压电薄膜102.空腔140设置在与压电薄膜相对的基板14的一部分膜102之间具有氧化硅层13。谐振频率调整部11设置有可变电压电源110和可变电容二极管111.可变电容二极管111包括ap型区域111p和n型区域111n，并且可变电容二极管111调整薄膜体波元件10通过向p型区域111p施加电压，电压低于施加到n型区域111n的电压，以便改变如此形成的pn结的电容。版权所有（C）2006，JPO＆NCIPI

10. 发明专利

JP2005269606A Surface acoustic wave element, and surface acoustic wave filter providing same 审中-公开
标题翻译：表面声波元件和表面声波滤波器
公开(公告)号：JP2005269606A
公开(公告)日：2005-09-29
申请号：JP2004373304
申请日：2004-12-24
申请人： Sanyo Electric Co Ltd , 三洋電機株式会社
发明人： YOSHIOKA KOICHI , OGURA MORIO , FUJITA MASAYUKI , KOBAYASHI TAIZO , WAKIZAKA KENICHIRO
IPC分类号： H03H9/145 , H01L21/4763 , H01L41/04 , H01L41/08 , H01L41/18 , H02N2/00 , H03H9/02 , H03H9/64
CPC分类号： H03H9/6489 , H03H9/02094 , H03H9/02929 , H03H9/14541
摘要： PROBLEM TO BE SOLVED: To acquire higher electric power resistance than conventional, by reducing the generation of migration in a surface acoustic wave element, where an electrode to be an interdigital transducer is formed on a piezoelectric substrate.
SOLUTION: In the surface acoustic wave element, the electrode 8 is configured, by laminating a ground Ti layer 2, an Al alloy layer 3, an upper Ti layer 4, and an Al alloy layer 7 one by one on a surface of the piezoelectric substrate 1, in which thickness A of the ground Ti layer 2 is larger than thickness C of the upper Ti layer 4, which is not thinner than 50 nm, and not thicker than 120 nm, and the sum of the thickness A of the ground Ti layer 2 and the thickness C of the upper Ti layer 4 is less than 150 nm.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：为了获得比传统的更高的电力电阻，通过减少在压电基板上形成作为叉指式换能器的电极的表面声波元件中的迁移的产生。解决方案：在表面声波元件中，电极8通过在表面上逐层地层叠研磨的Ti层2，Al合金层3，上部Ti层4和Al合金层7而构成，其中，研磨Ti层2的厚度A大于上述Ti层4的厚度C，其比50nm不薄且不厚于120nm，厚度A的总和的上层Ti层2的厚度C小于150nm。版权所有（C）2005，JPO＆NCIPI

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