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22. 发明专利

JP4760380B2 Surface-emitting laser 有权
公开(公告)号：JP4760380B2
公开(公告)日：2011-08-31
申请号：JP2005517294
申请日：2005-01-24
申请人：日本電気株式会社
发明人：隆由阿南
IPC分类号： H01S5/187 , H01S5/026 , H01S5/183
CPC分类号： H01S5/0655 , H01S5/026 , H01S5/0683 , H01S5/1082 , H01S5/18308 , H01S5/18313 , H01S5/18391 , H01S5/2095 , H01S2301/18

23. 发明专利

JP2010050412A Surface-emitting semiconductor laser 有权
标题翻译：表面发射半导体激光器
公开(公告)号：JP2010050412A
公开(公告)日：2010-03-04
申请号：JP2008215775
申请日：2008-08-25
申请人： Sony Corp , ソニー株式会社
发明人： MASUI TAKESHI , ARAKIDA TAKAHIRO , KODA RINTARO , MAEDA OSAMU , OKI TOMOYUKI , SHIROKISHI NAOTERU
IPC分类号： H01S5/183
CPC分类号： H01S5/18336 , H01S5/0655 , H01S5/18311 , H01S5/18316 , H01S5/18358 , H01S2301/166
摘要： PROBLEM TO BE SOLVED: To provide a surface-emitting semiconductor laser that can make high output in a fundamental transverse mode while preventing oscillation in a high-order transverse mode.
SOLUTION: In the surface-emitting semiconductor laser, a transverse mode adjusting layer 20 is provided on a side of a substrate 10, that is, on a side opposite to a side where the laser is emitted. In the transverse mode adjusting layer 20, a reflectivity in an oscillating wavelength λ on a region opposite to a center region of a light-emitting region 13A is higher than that in the oscillating wavelength λ on a region opposite to an outer peripheral region of the light-emitting region 13A. Accordingly, light output in the fundamental transverse mode is not likely to be prevented by the transverse mode adjusting layer 20, thereby highly maintaining slope efficiency of the fundamental transverse mode.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种能够在高横向模式下防止振荡的情况下能够实现基本横向模式的高输出的表面发射半导体激光器。解决方案：在表面发射半导体激光器中，横向模式调节层20设置在基板10的一侧，即在与激光发射侧相反的一侧。在横模式调整层20中，在与发光区域13A的中心区域相反的区域上的振荡波长λ的反射率高于在与发光区域13A的外周区域相反的区域的振荡波长λ的反射率发光区域13A。因此，横向模式调节层20不可能防止基本横模的光输出，从而高度保持基本横模的斜率效率。版权所有（C）2010，JPO＆INPIT

24. 发明专利

JP2009076640A Semiconductor light emitting element 审中-公开
标题翻译：半导体发光元件
公开(公告)号：JP2009076640A
公开(公告)日：2009-04-09
申请号：JP2007243752
申请日：2007-09-20
申请人： Fujifilm Corp , 富士フイルム株式会社
发明人： OSATO TAKESHI
IPC分类号： H01S5/16
CPC分类号： H01S5/32 , B82Y20/00 , H01L33/0045 , H01S5/0655 , H01S5/1082 , H01S5/3213 , H01S5/34306 , H01S2301/18
摘要： PROBLEM TO BE SOLVED: To obtain a semiconductor light emitting element which can perform high output operation with a high reliability and a good reproducibility.
SOLUTION: The semiconductor light emitting element of edge emission type includes a substrate 1, a first conductivity cladding layer 2 laminated on the substrate 1, an active region layer 15 including an active layer 5 laminated on the first conductivity cladding layer 2, a second conductivity cladding layer 7 laminated on the active region layer 15 on its light emission region so that the thickness of a region of at least the active region layer 15 in the vicinity of the light emission edge is smaller than the thickness of the other region, and a second conductivity re-growth layer 9 which is laminated on the second conductivity cladding layer 7 or on the active region layer having the second conductivity cladding layer 7 not laminated thereon and which has a refractive index higher than that of the second conductivity cladding layer 7.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：获得可以以高可靠性和良好再现性执行高输出操作的半导体发光元件。＆lt; P＆gt;解决方案：边缘发射型半导体发光元件包括基板1，层叠在基板1上的第一导电率包层2，层叠在第一导电性覆层2上的有源层5的有源区域15，在其发光区域层叠在有源区域层15上的第二导电性覆层7，使得至少有源区域层15的发光边缘附近的区域的厚度小于其他区域的厚度以及第二导电性再生长层9，其层叠在第二导电性包层7上或者在其上没有层叠有第二导电性包层7的有源区层上，折射率高于第二导电率包层版权所有（C）2009，JPO＆INPIT

25. 发明专利

JP2009054637A Quantum cascade laser device 有权
标题翻译：量子CASCADE激光器件
公开(公告)号：JP2009054637A
公开(公告)日：2009-03-12
申请号：JP2007217395
申请日：2007-08-23
申请人： Hamamatsu Photonics Kk , 浜松ホトニクス株式会社
发明人： SUGIYAMA ATSUSHI , OCHIAI TAKAHIDE , FUJITA KAZUMASA , AKIKUSA NAOHIRO , EDAMURA TADATAKA , FURUTA SHINICHI
IPC分类号： H01S5/12 , H01S5/227 , H01S5/343
CPC分类号： H01S5/12 , B82Y20/00 , H01S3/08031 , H01S5/0655 , H01S5/2272 , H01S5/3412 , H01S5/34366
摘要： PROBLEM TO BE SOLVED: To provide a DFB-type quantum cascade laser device capable of surely carrying out CW oscillation of single-mode light even at room temperature or at a temperature near it.
SOLUTION: In this quantum cascade laser device 1, because a top grating system with a diffraction grating 7 formed on a laminate 3 is adopted, the degradation of the temperature characteristic as a laser device or the deterioration of yield and reproducibility is suppressed as compared to an embedded grating system. Moreover, because the thickness of a clad layer 5 located between an active layer 4 and the diffraction grating 7 is in the range of 42±10% of the oscillating wavelength, it becomes possible to prevent that the seepage of light from the active layer 4 to the diffraction grating 7 becomes weak, or the leakage of light becomes large. Therefore, according to this quantum cascade laser device 1, the CW oscillation of single-mode light can be carried out even at room temperature or at a temperature near it.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供即使在室温或接近温度的情况下也能够可靠地执行单模光的CW振荡的DFB型量子级联激光装置。解决方案：在该量子级联激光装置1中，由于采用在层叠体3上形成的具有衍射光栅7的顶部光栅系统，因此抑制了作为激光装置的温度特性的劣化或成品率和再现性的劣化被抑制与嵌入式光栅系统相比。此外，由于位于有源层4和衍射光栅7之间的包覆层5的厚度在振荡波长的42±10％的范围内，因此可以防止来自有源层4的光的渗漏到衍射光栅7变弱，或者光的泄漏变大。因此，根据该量子级联激光装置1，即使在室温或其附近的温度下也可以进行单模光的CW振荡。版权所有（C）2009，JPO＆INPIT

26. 发明专利

JP2009038062A Surface-emitting laser 有权
标题翻译：表面发射激光
公开(公告)号：JP2009038062A
公开(公告)日：2009-02-19
申请号：JP2007198485
申请日：2007-07-31
申请人： Canon Inc , キヤノン株式会社
发明人： IKUTA MITSUHIRO
IPC分类号： H01S5/187
CPC分类号： B82Y20/00 , H01S5/0655 , H01S5/105 , H01S5/18311 , H01S5/18358 , H01S5/18372 , H01S5/2086 , H01S5/34326
摘要： PROBLEM TO BE SOLVED: To provide a surface-emitting laser capable of reducing effects on reflectance of an upper reflection mirror and obtaining high output in a single transverse mode.
SOLUTION: The surface-emitting laser includes a plurality of semiconductor layers, laminated on a substrate, which includes a lower semiconductor multilayer reflection mirror, an active layer, and an upper semiconductor multilayer reflection mirror, wherein the lower or upper semiconductor multilayer reflection mirror includes a first semiconductor layer having a two-dimensional photonic crystal structure comprised of a high and low refractive index portions which are arranged in a direction parallel to the substrate, and wherein a second semiconductor layer laminated on the first semiconductor layer includes a microhole which reaches the low refractive index portion, the cross section of the microhole in the direction parallel to the substrate being smaller than the cross section of the low refractive index portion formed in the first semiconductor layer.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供能够降低对上反射镜的反射率的影响并在单横模中获得高输出的表面发射激光器。解决方案：表面发射激光器包括层叠在基板上的多个半导体层，其包括下半导体多层反射镜，有源层和上半导体多层反射镜，其中下或上半导体多层反射镜反射镜包括具有二维光子晶体结构的第一半导体层，所述二维光子晶体结构由沿着与所述衬底平行的方向排列的高折射率部分和低折射率部分组成，并且其中层叠在所述第一半导体层上的第二半导体层包括微孔其到达低折射率部分时，微孔在与基板平行的方向上的横截面小于形成在第一半导体层中的低折射率部分的横截面。版权所有（C）2009，JPO＆INPIT

27. 发明专利

JP4161155B2 The solid polymer electrolyte material suitable for use in a fuel cell 有权
公开(公告)号：JP4161155B2
公开(公告)日：2008-10-08
申请号：JP2000047736
申请日：2000-02-24
申请人：ダイキン工業株式会社 , 株式会社豊田中央研究所
发明人：隆之中村 , 憲俊岡 , 哲男清水 , 義人田中 , 孝之荒木
IPC分类号： C08F293/00 , H01B1/06 , C08F228/02 , C08J5/22 , G02B6/12 , G02B6/13 , G02F1/025 , H01B1/12 , H01M8/02 , H01M8/10 , H01S5/00 , H01S5/20 , H01S5/22 , H02N11/00
CPC分类号： H01S5/22 , C08J5/2237 , C08J2327/12 , G02B2006/12097 , G02B2006/12176 , H01B1/122 , H01M8/0289 , H01M8/1025 , H01M8/1039 , H01M8/1067 , H01S5/0655 , H01S5/20 , H01S5/2004 , H01S5/2213 , H01S5/2218 , H01S5/2227
摘要： A material for solid polyelectrolytes which comprises a polymer comprising two or more fluoropolymer segments differing in monomer composition, wherein at least one of the fluoropolymer segments has sulfonic acid type functional groups.

28. 发明专利

JPWO2006016453A1 半導体レーザ、半導体光アンプ、及び光通信装置有权
公开(公告)号：JPWO2006016453A1
公开(公告)日：2008-07-31
申请号：JP2006531319
申请日：2005-06-29
申请人：日本電気株式会社
发明人：貴一浜本 , 貴一浜本 , ヤンドゥ・メルリール , ヤンドゥ・メルリール
IPC分类号： H01S5/10
CPC分类号： H01S5/227 , B82Y20/00 , H01S5/028 , H01S5/0655 , H01S5/1003 , H01S5/1014 , H01S5/1039 , H01S5/1064 , H01S5/2206 , H01S5/2222 , H01S5/34306 , H01S5/50
摘要：低消費電力特性に優れ、かつ、高光出力特性を兼ね備えた半導体レーザ、半導体光アンプ、及びこれらを搭載した光通信装置を提供する。本発明の一態様に係る半導体レーザは、能動導波路を備える半導体レーザ100であって、前記能動導波路は、基本モードを含む複数のモードを提供する第1の導波路11aと、第1の導波路11aよりも広い幅であって、多モードを提供する第2の導波路12aとを備え、前記能動導波路から発振される発振光として基本モードを提供する。

29. 发明专利

JP3985159B2 Gain-clamped semiconductor optical amplifier 有权
标题翻译：空值
公开(公告)号：JP3985159B2
公开(公告)日：2007-10-03
申请号：JP2003070075
申请日：2003-03-14
申请人：日本電気株式会社
发明人：大畠山
IPC分类号： H01S5/50 , H01S5/042
CPC分类号： H01S5/5072 , H01S5/026 , H01S5/0655 , H01S5/0683 , H01S5/1078 , H01S5/4025 , H01S5/4068

30. 发明专利

JP2007234727A Optical element, its fabrication process, and semiconductor laser device employing that optical element 有权
标题翻译：光学元件，其制造工艺以及采用光学元件的半导体激光器件
公开(公告)号：JP2007234727A
公开(公告)日：2007-09-13
申请号：JP2006051945
申请日：2006-02-28
申请人： Canon Inc , キヤノン株式会社
发明人： UCHIDA TATSURO
IPC分类号： H01S5/183
CPC分类号： H01S5/18311 , B82Y20/00 , G02B6/1225 , H01S5/0655 , H01S5/105 , H01S5/2081 , H01S5/3211 , H01S5/34326 , H01S5/3436 , H01S2301/166
摘要： PROBLEM TO BE SOLVED: To provide an optical element in which refractive index difference can be ensured between a member at the lower portion of a photonic crystal layer and the crystal layer without using a conventional sticking technology, and to provide a fabrication process of the optical element, and a semiconductor laser device employing the optical element.
SOLUTION: In the optical element having a first layer 108 and a second layer 106 on a substrate 100, the second layer is constituted to include pores and has such a structure as the refractive index in the in-plane direction differs periodically, the first layer has an oxidation region on the lower portion side of the pore in the second layer, and the refractive index of the oxidation region is lower than that of the second layer.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种在不使用常规的粘贴技术的情况下，可以确保在光子晶体层的下部的部件与晶体层之间的折射率差异的光学元件，并提供制造工艺的光学元件，以及采用该光学元件的半导体激光器件。解决方案：在基板100上具有第一层108和第二层106的光学元件中，第二层被构造成包括孔，并且具有如在面内方向上的折射率周期性不同的结构，第一层在第二层的孔的下部侧具有氧化区域，氧化区域的折射率低于第二层的折射率。版权所有（C）2007，JPO＆INPIT

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